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                             99 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An all electrostatic mass spectrometer Kilius, L.R.
 1981
 191 1-3 p. 27-33
7 p.
 artikel
2 An application of Rutherford backscattering to the study of growth of evaporated films Fujino, Y.
 1981
 191 1-3 p. 177-182
6 p.
 artikel
3 An archaeological application of PIXE-PIGME analysis to admirality islands obsidians Ambrose, W.R.
 1981
 191 1-3 p. 397-402
6 p.
 artikel
4 An experimental study of the 180° backscattering yield enhancement Jackman, T.E.
 1981
 191 1-3 p. 527-531
5 p.
 artikel
5 A nuclear microprobe analysis of laser treated aluminium implanted with antimony Jain, Animesh K.
 1981
 191 1-3 p. 151-156
6 p.
 artikel
6 Application of nuclear resonant reactions to the analysis of implanted Ne atoms in niobium crystal Naramoto, H.
 1981
 191 1-3 p. 367-372
6 p.
 artikel
7 Atomic positions of surface atoms using high energy ion scattering Feldman, L.C.
 1981
 191 1-3 p. 211-219
9 p.
 artikel
8 Author index 1981
 191 1-3 p. 591-597
7 p.
 artikel
9 Average energy to create an ion pair in air by uranium and lead ions of about 4 MeV/amu Liesem, Helmut
 1981
 191 1-3 p. 443-446
4 p.
 artikel
10 Background in semiconductor devices Sellschop, J.P.F.
 1981
 191 1-3 p. 447-452
6 p.
 artikel
11 Cluster ion emission from ion bombarded niobium-vanadium alloys Garrett, R.F.
 1981
 191 1-3 p. 308-312
5 p.
 artikel
12 Committees 1981
 191 1-3 p. xii-
1 p.
 artikel
13 Comparison of kinematic X-ray diffraction and backscattering spectrometry — strain and damage profiles in garnet Paine, B.M.
 1981
 191 1-3 p. 80-86
7 p.
 artikel
14 Comparison of the retention characteristics of low-energy xenon and caesium implanted in silicon Menzel, N.
 1981
 191 1-3 p. 235-240
6 p.
 artikel
15 Contamination induced changes in photon emission from Nb and Nb/V alloys Loxton, C.M.
 1981
 191 1-3 p. 269-274
6 p.
 artikel
16 Corrected electrostatic lens systems for ion beams Dalglish, R.L.
 1981
 191 1-3 p. 191-198
8 p.
 artikel
17 Corrosion inhibition by ion implantation of Al or Mg in Cu, investigated by RBS Svendsen, Leo G.
 1981
 191 1-3 p. 141-145
5 p.
 artikel
18 Dating of obsidian artifacts by depth-profiling of artificially hydrated surface layers Tsong, I.S.T.
 1981
 191 1-3 p. 403-407
5 p.
 artikel
19 Decoration of dislocations by proton irradiation of halite Bird, J.R.
 1981
 191 1-3 p. 19-22
4 p.
 artikel
20 Depth profiling in the investigation of industrial processes Mercer, P.D.
 1981
 191 1-3 p. 283-288
6 p.
 artikel
21 Depth profiling light nuclei in single crystals: A combined nuclear reaction and RBS technique to minimize unwanted channeling effects L'Hoir, A.
 1981
 191 1-3 p. 357-366
10 p.
 artikel
22 Detection of carbon contamination by means of the 12 C(p, γ)13 N resonance reaction Rudolph, W.
 1981
 191 1-3 p. 373-378
6 p.
 artikel
23 Detection of fluorine contamination by means of the 19(p,p′γ)19 reaction Gippner, P.
 1981
 191 1-3 p. 341-344
4 p.
 artikel
24 Detection of trace elements in ash samples performed by combining RBS and PIXE Svendsen, Leo G.
 1981
 191 1-3 p. 414-418
5 p.
 artikel
25 Determination of defect structures by ion-channeling and by X-ray diffraction — A comparative study Kaufmann, R.
 1981
 191 1-3 p. 532-536
5 p.
 artikel
26 Diamond: Ion beam analyses of an extreme form of carbon Sellschop, J.P.F.
 1981
 191 1-3 p. 11-18
8 p.
 artikel
27 Editorial 1981
 191 1-3 p. vii-
1 p.
 artikel
28 Editorial Board 1981
 191 1-3 p. IFC-
1 p.
 artikel
29 Effect of CW-laser irradiation of evaporated layers on silicon Bhattacharya, P.K.
 1981
 191 1-3 p. 47-50
4 p.
 artikel
30 Electron capture spectroscopy ECS at Cr(100) and Ni(110) surfaces Rau, Carl
 1981
 191 1-3 p. 433-436
4 p.
 artikel
31 Energy-loss straggling of protons, deuterons and α-particles in copper Friedland, E.
 1981
 191 1-3 p. 490-494
5 p.
 artikel
32 ESCA investigation of ion beam synthesized silicon nitride passivating layers on silicon Yadav, A.D.
 1981
 191 1-3 p. 293-296
4 p.
 artikel
33 Experimental investigations of fast heavy ion induced desorption Dück, P.
 1981
 191 1-3 p. 245-252
8 p.
 artikel
34 Foreword 1981
 191 1-3 p. viii-ix
nvt p.
 artikel
35 Furnace and laser annealing of bismuth implanted silicon Wagh, A.G.
 1981
 191 1-3 p. 96-100
5 p.
 artikel
36 Glancing angle measurements of oxygen depth profiles Bird, J.R.
 1981
 191 1-3 p. 345-348
4 p.
 artikel
37 High depth resolution for profiling carbon by the 12C(3He, α0)11C reaction Gossett, C.R.
 1981
 191 1-3 p. 335-340
6 p.
 artikel
38 High-fluence implantations of Ge into 〈111〉 Si Hart, R.R.
 1981
 191 1-3 p. 70-74
5 p.
 artikel
39 High performance silicon solar cells using low dose phosphorus implants Blakers, Andrew W.
 1981
 191 1-3 p. 51-53
3 p.
 artikel
40 High precision automatic energy scanning of slit stabilized electrostatic accelerators Amsel, G.
 1981
 191 1-3 p. 189-190
2 p.
 artikel
41 High resolution RBS and channeling analysis of ion implanted single crystal Fe Short, K.T.
 1981
 191 1-3 p. 537-542
6 p.
 artikel
42 HIXE — A comparison of experimental ionization subshell cross sections with PWBA, PWBAR and CPSSR theories Cohen, D.D.
 1981
 191 1-3 p. 551-557
7 p.
 artikel
43 Hydrogen and chlorine detection at the SiO2/Si interface Tsong, I.S.T.
 1981
 191 1-3 p. 91-95
5 p.
 artikel
44 Hydrogen in gas phase and ion implantation doped amorphous silicon Demond, F.J.
 1981
 191 1-3 p. 59-62
4 p.
 artikel
45 Investigation of soft upsets in MOS memories with a microbeam Campbell, A.B.
 1981
 191 1-3 p. 437-442
6 p.
 artikel
46 Ion beam analysis in archaeology Huan-sheng Chen,
 1981
 191 1-3 p. 391-396
6 p.
 artikel
47 Ion beam analysis of beam processing operations Gibbons, J.F.
 1981
 191 1-3 p. 115-118
4 p.
 artikel
48 Ion beam analysis of niobium-vanadium alloys Martin, P.J.
 1981
 191 1-3 p. 275-281
7 p.
 artikel
49 Ion beam analysis of semiconductor interfaces Poate, J.M.
 1981
 191 1-3 p. 39-46
8 p.
 artikel
50 Ion beam lithography Brown, W.L.
 1981
 191 1-3 p. 157-168
12 p.
 artikel
51 Ion implantation of carbon in diamond Derry, T.E.
 1981
 191 1-3 p. 23-26
4 p.
 artikel
52 Ion implant gettering of generation impurities in silicon investigated using PIXE and Rutherford backscattering spectrometry Golja, B.
 1981
 191 1-3 p. 63-69
7 p.
 artikel
53 Ion range and damage depth parameters for 20–200 keV Pb+ ion implantation in Si Christodoulides, C.E.
 1981
 191 1-3 p. 124-134
11 p.
 artikel
54 Large angle differential scattering cross-sections for various ions (2 ⩽ Z 1 ⩽ 10) in the 65–135 keV energy range Poehlman, W.F.S.
 1981
 191 1-3 p. 495-499
5 p.
 artikel
55 Lattice deformation and impurity location of Bi implanted Si induced by pulsed laser annealing De-xin, Cao
 1981
 191 1-3 p. 54-58
5 p.
 artikel
56 Materials analysis with an external beam proton microprobe Macarthur, J.D.
 1981
 191 1-3 p. 204-210
7 p.
 artikel
57 Microanalysis of fluorine by nuclear reactions Maurel, B.
 1981
 191 1-3 p. 349-356
8 p.
 artikel
58 Microbeam analysis of deuterium in carbon probes exposed to plasma in the DITE tokamak Sofield, C.J.
 1981
 191 1-3 p. 383-390
8 p.
 artikel
59 Microbeam analysis of hydrogen in coked catalyst pellets Sofield, C.J.
 1981
 191 1-3 p. 379-382
4 p.
 artikel
60 Modern problems of low-velocity stopping powers Brandt, Werner
 1981
 191 1-3 p. 453-461
9 p.
 artikel
61 Molecular and atomic adsorption on surfaces: Can SIMS differentiate between the two cases? Passler, M.A.
 1981
 191 1-3 p. 323-326
4 p.
 artikel
62 On the possibility of immediate analysis of chlorine and sulfur in air by argon ion induced X-ray emission Heitz, Ch.
 1981
 191 1-3 p. 558-564
7 p.
 artikel
63 On the shapes of high-resolution Rutherford backscattering spectra Butler, J.W.
 1981
 191 1-3 p. 516-520
5 p.
 artikel
64 Optimum sample utilization in secondary ion mass spectrometry Liebl, Helmut
 1981
 191 1-3 p. 183-188
6 p.
 artikel
65 Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions Wittmaack, K.
 1981
 191 1-3 p. 327-334
8 p.
 artikel
66 Proton microprobe dating of natural zircons Lucas, M.A.
 1981
 191 1-3 p. 34-38
5 p.
 artikel
67 Proton-proton scattering as a tool for hydrogen profiling in thin films for semiconductor technology Paduschek, P.
 1981
 191 1-3 p. 75-79
5 p.
 artikel
68 Pulsed proton beam annealing: Semiconductors and silicides Baglin, J.E.E.
 1981
 191 1-3 p. 169-176
8 p.
 artikel
69 Quantitative analysis of buried interfacial impurity layers by SIMS and RBS Williams, Peter
 1981
 191 1-3 p. 318-322
5 p.
 artikel
70 Rare isotope detection with tandem accelerators Rucklidge, J.C.
 1981
 191 1-3 p. 1-9
9 p.
 artikel
71 RBS measurements of compositional change of alloys induced by ion bombardment Nakamura, H.
 1981
 191 1-3 p. 119-123
5 p.
 artikel
72 Reversibility effects in disordered and ordered solids leading to scattered-ion yield enhancements near 180° Appleton, B.R.
 1981
 191 1-3 p. 507-515
9 p.
 artikel
73 Secondary fluorescence induced in elements in the mumeter vicinity of ion muprobe spots in PIXE experiments Heck, D.
 1981
 191 1-3 p. 579-582
4 p.
 artikel
74 Secondary ion mass spectrometry and its relation to high-energy ion beam analysis techniques Magee, Charles W.
 1981
 191 1-3 p. 297-307
11 p.
 artikel
75 Semiconductor analysis with a channeled helium microbeam Ingarfield, S.A.
 1981
 191 1-3 p. 521-526
6 p.
 artikel
76 Simulation of dynamic changes in near-surface composition during ion bombardment Roush, M.L.
 1981
 191 1-3 p. 135-140
6 p.
 artikel
77 Small angle multiple scattering of ions for the Moliere potential Smith, Andrew E.
 1981
 191 1-3 p. 500-506
7 p.
 artikel
78 SOXS — A computer code for the synthesis of X-ray spectra Clayton, E.
 1981
 191 1-3 p. 573-577
5 p.
 artikel
79 Sputtering induced surface composition changes in copper-palladium alloys Sundararaman, M.
 1981
 191 1-3 p. 289-292
4 p.
 artikel
80 Sputtering of ionic clusters from KCl, NaCl and LiF Kerestes, Z.L.
 1981
 191 1-3 p. 259-267
9 p.
 artikel
81 Sputtering yield measurements on single crystal cobalt Chernysh, V.S.
 1981
 191 1-3 p. 253-258
6 p.
 artikel
82 Stopping powers for 20–140 keV H+ and He+ on Ni, Ag and Au Thompson, D.A.
 1981
 191 1-3 p. 469-474
6 p.
 artikel
83 Studies of Li, B and N in ancient oriental pottery and modern ceramic materials by means of (n, p) and (n, α) spectrometry Fink, D.
 1981
 191 1-3 p. 408-413
6 p.
 artikel
84 Study of silicon layer implanted with iron Thailamani, L.E.
 1981
 191 1-3 p. 87-90
4 p.
 artikel
85 Study of the matrix effect in the secondary ion emission of aluminium-zinc alloys van Craen, M.
 1981
 191 1-3 p. 313-317
5 p.
 artikel
86 The angular distribution of material sputtered from AgAu and CuPt by 20–80 keV argon Andersen, H.H.
 1981
 191 1-3 p. 241-244
4 p.
 artikel
87 The atomic string potential: An ab initio calculation Cruz, S.A.
 1981
 191 1-3 p. 479-489
11 p.
 artikel
88 The background in detectors caused by sea level cosmic rays Ziegler, J.F.
 1981
 191 1-3 p. 419-424
6 p.
 artikel
89 The “Coulomb-explosion” technique for determining geometrical structures of molecular ions Gemmel, Donald S.
 1981
 191 1-3 p. 425-431
7 p.
 artikel
90 The depth profile of high-dose low-mass ions implanted into higher mass substrate by RBS analysis Yin Shi-duan,
 1981
 191 1-3 p. 147-150
4 p.
 artikel
91 The distribution of trace elements in mature wheat seed using the Melbourne proton microprobe Mazzolini, A.P.
 1981
 191 1-3 p. 583-589
7 p.
 artikel
92 The erosion of frozen argon by swift helium ions Besenbacher, F.
 1981
 191 1-3 p. 221-234
14 p.
 artikel
93 The Los Alamos nuclear microprobe with a superconducting solenoid final lens Maggiore, C.J.
 1981
 191 1-3 p. 199-203
5 p.
 artikel
94 The role of charge-exchange in energy-loss straggling Sofield, C.J.
 1981
 191 1-3 p. 462-468
7 p.
 artikel
95 The stopping power of gold in the Bethe region Andersen, H.H.
 1981
 191 1-3 p. 475-478
4 p.
 artikel
96 The use of ion beam analysis in biological sciences Deconninck, G.
 1981
 191 1-3 p. 543-550
8 p.
 artikel
97 Trace element detection by high energy heavy ion induced X-ray emission Scheer, J.
 1981
 191 1-3 p. 565-566
2 p.
 artikel
98 Uncertainties in theoretical thick target PIXE yields Clayton, E.
 1981
 191 1-3 p. 567-572
6 p.
 artikel
99 Use of ion beam analysis in metal modification by means of ion implantation Hubler, G.K.
 1981
 191 1-3 p. 101-113
13 p.
 artikel
                             99 gevonden resultaten
 
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