| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A duoplasmatron ion source for solid materials such as As and P
|
Zhong Bo-Li,
|
|
1981
|
189 |
1 |
p. 335-339
5 p.
|
artikel
|
| 2 |
Advances in molten metal field ion sources
|
Clampitt, R.
|
|
1981
|
189 |
1 |
p. 111-116
6 p.
|
artikel
|
| 3 |
A high-throughput mechanically scanned target chamber
|
Ryding, G.
|
|
1981
|
189 |
1 |
p. 319-325
7 p.
|
artikel
|
| 4 |
A medium energy facility for variable temperature implantation and analysis
|
Chaumont, Jacques
|
|
1981
|
189 |
1 |
p. 193-198
6 p.
|
artikel
|
| 5 |
A microprocessor-based beam sweep control unit
|
Conrad, R.
|
|
1981
|
189 |
1 |
p. 275-280
6 p.
|
artikel
|
| 6 |
A new dose control technique for ion implantation
|
Ryding, G.
|
|
1981
|
189 |
1 |
p. 295-303
9 p.
|
artikel
|
| 7 |
An ion accelerator facility for the preparation of nuclear bombardment targets
|
Grime, G.W.
|
|
1981
|
189 |
1 |
p. 199-203
5 p.
|
artikel
|
| 8 |
Aspects of the physics, chemistry, and technology of high intensity heavy ion sources
|
Alton, G.D.
|
|
1981
|
189 |
1 |
p. 15-42
28 p.
|
artikel
|
| 9 |
Beam optics design for ion implantation
|
Keller, J.H.
|
|
1981
|
189 |
1 |
p. 7-14
8 p.
|
artikel
|
| 10 |
Comparison between properties of steels implanted with unseparated ions and a selected ion
|
Iwaki, Masaya
|
|
1981
|
189 |
1 |
p. 155-159
5 p.
|
artikel
|
| 11 |
Control techniques for a high current ion implantation system
|
Bayer, Erich H.
|
|
1981
|
189 |
1 |
p. 183-186
4 p.
|
artikel
|
| 12 |
Correlation between electrostatic scan pattern and local dose nonuniformities
|
Glawischnig, H.
|
|
1981
|
189 |
1 |
p. 291-294
4 p.
|
artikel
|
| 13 |
Cryostat for ion implantation into insulators at low temperatures
|
Rössler, Kurt
|
|
1981
|
189 |
1 |
p. 141-144
4 p.
|
artikel
|
| 14 |
Design and fabrication of a simulation chamber
|
Kumar Agrawal, Satyendra
|
|
1981
|
189 |
1 |
p. 331-333
3 p.
|
artikel
|
| 15 |
Dosimetry measurement in ion implanters
|
Jamba, Douglas M.
|
|
1981
|
189 |
1 |
p. 253-263
11 p.
|
artikel
|
| 16 |
Editorial
|
McKenna, Charles M.
|
|
1981
|
189 |
1 |
p. vii-ix
nvt p.
|
artikel
|
| 17 |
Editorial Board
|
|
|
1981
|
189 |
1 |
p. ii-
1 p.
|
artikel
|
| 18 |
Electrical rotation of quadrupole lenses
|
Martin, F.W.
|
|
1981
|
189 |
1 |
p. 93-96
4 p.
|
artikel
|
| 19 |
Electromagnetic scanning systems
|
Hanley, Peter R.
|
|
1981
|
189 |
1 |
p. 227-237
11 p.
|
artikel
|
| 20 |
Electrostatic ion optics and beam transport for ion implantation
|
Larson, J.D.
|
|
1981
|
189 |
1 |
p. 71-91
21 p.
|
artikel
|
| 21 |
Equipment for accurate ion collection of high areal uniformity
|
Gries, W.H.
|
|
1981
|
189 |
1 |
p. 287-290
4 p.
|
artikel
|
| 22 |
Experiments on gas cooling of wafers
|
King, Monty
|
|
1981
|
189 |
1 |
p. 169-173
5 p.
|
artikel
|
| 23 |
Fast target heating system for ion implantation
|
Kräutle, H.
|
|
1981
|
189 |
1 |
p. 151-154
4 p.
|
artikel
|
| 24 |
First results with ELSIRE — a reflex ion source for singly charged heavy ions
|
Keller, Roderich
|
|
1981
|
189 |
1 |
p. 97-101
5 p.
|
artikel
|
| 25 |
Historical perspective and future trends for ion implantation systems
|
Wegmann, Lienhard
|
|
1981
|
189 |
1 |
p. 1-6
6 p.
|
artikel
|
| 26 |
Improved uniformity of implanted dose by a compensated scan pattern generator
|
Turner, N.
|
|
1981
|
189 |
1 |
p. 311-318
8 p.
|
artikel
|
| 27 |
In situ implantation system in argonne national laboratory hvem-tandem facility
|
Taylor, Anthony
|
|
1981
|
189 |
1 |
p. 211-217
7 p.
|
artikel
|
| 28 |
Ion extraction and optics arithmetic
|
Whealton, J.H.
|
|
1981
|
189 |
1 |
p. 55-70
16 p.
|
artikel
|
| 29 |
Ion implantation in semiconductor processing
|
Namba, Susumu
|
|
1981
|
189 |
1 |
p. 175-182
8 p.
|
artikel
|
| 30 |
Low cost molecular ion implantation equipment
|
Muller, J.C.
|
|
1981
|
189 |
1 |
p. 205-210
6 p.
|
artikel
|
| 31 |
Low temperature irradiation equipment for measurements down to 150 mK
|
Bauriedl, W.
|
|
1981
|
189 |
1 |
p. 145-150
6 p.
|
artikel
|
| 32 |
Magnet optics for beam transport
|
Glavish, H.F.
|
|
1981
|
189 |
1 |
p. 43-53
11 p.
|
artikel
|
| 33 |
Manufacturing advantages for remote control of medium current ion implant systems
|
Marsh, R.L.
|
|
1981
|
189 |
1 |
p. 187-191
5 p.
|
artikel
|
| 34 |
New techniques of implantation for near-term applications
|
Bruel, M.
|
|
1981
|
189 |
1 |
p. 135-140
6 p.
|
artikel
|
| 35 |
Optimal selection of sweep frequencies in ion implantation systems with X-Y scanning
|
Rogers, Edwin J.
|
|
1981
|
189 |
1 |
p. 305-310
6 p.
|
artikel
|
| 36 |
Post-implant methods for characterizing the doping uniformity and dose accuracy of ion implantation equipment
|
Gan, J.N.
|
|
1981
|
189 |
1 |
p. 265-274
10 p.
|
artikel
|
| 37 |
Production of high-current metal ion beams
|
Hirvonen, J.K.
|
|
1981
|
189 |
1 |
p. 103-106
4 p.
|
artikel
|
| 38 |
Pulsed CV system for ion implantation control
|
Schmid, G.E.
|
|
1981
|
189 |
1 |
p. 219-225
7 p.
|
artikel
|
| 39 |
Some considerations on target chamber design
|
Stocker, Rudolf J.
|
|
1981
|
189 |
1 |
p. 281-286
6 p.
|
artikel
|
| 40 |
Stimulation of low energy (shallow) implants using target tilt
|
Beanland, D.G.
|
|
1981
|
189 |
1 |
p. 133-
1 p.
|
artikel
|
| 41 |
Target chambers for ion implantation using mechanical scanning
|
Ryding, G.
|
|
1981
|
189 |
1 |
p. 239-251
13 p.
|
artikel
|
| 42 |
Techniques and equipment for non-semiconductor applications of ion implantation
|
Dearnaley, G.
|
|
1981
|
189 |
1 |
p. 117-132
16 p.
|
artikel
|
| 43 |
Technique to study simultaneous deposition and ion implantation
|
Naujokaitis, R.
|
|
1981
|
189 |
1 |
p. 327-329
3 p.
|
artikel
|
| 44 |
The Frankfurt PIG ion source
|
Baumann, H.
|
|
1981
|
189 |
1 |
p. 107-110
4 p.
|
artikel
|
| 45 |
The influence of ion implantation parameters on the surface modification of steels
|
Goode, P.D.
|
|
1981
|
189 |
1 |
p. 161-168
8 p.
|
artikel
|
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