| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A report on the second European conference on crystal growth
|
Pamplin, Brian
|
|
1979
|
2 |
C |
p. 237-240
|
artikel
|
| 2 |
Compound index
|
|
|
1979
|
2 |
C |
p. 411-414
|
artikel
|
| 3 |
Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique
|
Olsen, G.H.
|
|
1979
|
2 |
C |
p. 309-375
|
artikel
|
| 4 |
Design considerations for molecular beam epitaxy systems
|
Luscher, P.E.
|
|
1979
|
2 |
C |
p. 15-32
|
artikel
|
| 5 |
Editorial
|
|
|
1979
|
2 |
C |
p. 249
|
artikel
|
| 6 |
Forthcoming conferences
|
|
|
1979
|
2 |
C |
p. 243-245
|
artikel
|
| 7 |
Growth and characterization of transition metal silicides
|
Mason, K.N.
|
|
1979
|
2 |
C |
p. 269-307
|
artikel
|
| 8 |
Growth of bulk yttrium iron garnet crystals from high temperature solutions
|
Timofeeva, V.A.
|
|
1979
|
2 |
C |
p. 377-404
|
artikel
|
| 9 |
Integrated optical devices fabricated by MBE
|
Burnham, R.D.
|
|
1979
|
2 |
C |
p. 95-113
|
artikel
|
| 10 |
Introduction
|
Pamplin, Brian R.
|
|
1979
|
2 |
C |
p. 1-2
|
artikel
|
| 11 |
LPE growths of quaternary GayIn1−y AsxP1−x alloys
|
Chiao, S.H.
|
|
1979
|
2 |
C |
p. 251-268
|
artikel
|
| 12 |
MBE techniques for IV–VI optoelectronic devices
|
Holloway, H.
|
|
1979
|
2 |
C |
p. 49-94
|
artikel
|
| 13 |
Melt and solution growth of bulk single crystals of quaternary III–V alloys
|
Bachmann, K.J.
|
|
1979
|
2 |
C |
p. 171-206
|
artikel
|
| 14 |
Nitrides—Structures and crystal growth
|
Lang, J.
|
|
1979
|
2 |
C |
p. 207-235
|
artikel
|
| 15 |
Nonstoichiometry and carrier concentration control in MBE of compound semiconductors
|
Smith, Donald L.
|
|
1979
|
2 |
C |
p. 33-47
|
artikel
|
| 16 |
Periodic doping structure in GaAs
|
Döhler, G.H.
|
|
1979
|
2 |
C |
p. 145-168
|
artikel
|
| 17 |
Preparation and properties of solid state materials
|
Pamplin, Brian
|
|
1979
|
2 |
C |
p. 247-248
|
artikel
|
| 18 |
Report on fourth AACG(W) conference on crystal growth
|
Elwell, Dennis
|
|
1979
|
2 |
C |
p. 241-242
|
artikel
|
| 19 |
Semiconductor superlattices by MBE and their characterization
|
Chang, L.L.
|
|
1979
|
2 |
C |
p. 3-14
|
artikel
|
| 20 |
Semiconductor surface and crystal physics studied by MBE
|
Bachrach, R.Z.
|
|
1979
|
2 |
C |
p. 115-144
|
artikel
|
| 21 |
Subject index
|
|
|
1979
|
2 |
C |
p. 405-410
|
artikel
|
| 22 |
Thin films — Present and future
|
Pamplin, Brian
|
|
1979
|
2 |
C |
p. 169-170
|
artikel
|
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