nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advance of MBE in China
|
Jun-Ming, Zhou |
|
1985 |
|
4 |
p. 263-267 5 p. |
artikel |
2 |
Advances in gel growth: A review
|
Arora, S.K. |
|
1981 |
|
4 |
p. 345-378 34 p. |
artikel |
3 |
Advances in space research volume 1 number 5 “materials sciences in space”
|
|
|
1981 |
|
4 |
p. iii- 1 p. |
artikel |
4 |
Aerodynamics of nozzles used in spray pyrolysis
|
Lampkin, Curt M. |
|
1979 |
|
4 |
p. 405-416 12 p. |
artikel |
5 |
A method for finding new acousto-optical materials
|
Deyu, Li |
|
1985 |
|
4 |
p. 305-309 5 p. |
artikel |
6 |
A new nonlinear optical crystal KTP
|
Dezhong, Shen |
|
1985 |
|
4 |
p. 269-274 6 p. |
artikel |
7 |
An experimental method of measuring the crystallization front temperature
|
Jin, Wei Qing |
|
1985 |
|
4 |
p. 311-326 16 p. |
artikel |
8 |
Announcement
|
|
|
1981 |
|
4 |
p. vii- 1 p. |
artikel |
9 |
Applications of crystals
|
|
|
1980 |
|
4 |
p. i- 1 p. |
artikel |
10 |
Bridgman growth of CdxHg1−xTe— A review
|
Capper, P. |
|
1989 |
|
4 |
p. 259-293 35 p. |
artikel |
11 |
Characterisation of structures grown by Movpe using x-ray diffraction
|
Halliwell, Mary |
|
1989 |
|
4 |
p. 249-257 9 p. |
artikel |
12 |
Characterization of spray deposited CdS and CdSe photo conductors
|
Chamberlin, Rhodes |
|
1979 |
|
4 |
p. 418- 1 p. |
artikel |
13 |
Crystal growth from melts of high viscosity
|
Liebertz, J. |
|
1983 |
|
4 |
p. 361-369 9 p. |
artikel |
14 |
Crystal growth from solution in the institute of physics of the Chinese academy of sciences
|
Shou-quan, Jia |
|
1985 |
|
4 |
p. 335-350 16 p. |
artikel |
15 |
Crystal growth in China today a visit to China
|
Pamplin, Brian |
|
1985 |
|
4 |
p. i-ii nvt p. |
artikel |
16 |
Crystal growth theory and techniques, vols 1 and 2,
|
Pamplin, Brian |
|
1979 |
|
4 |
p. 431-432 2 p. |
artikel |
17 |
Crystals growth properties and applications vol 1 crystal for magnetic applications
|
Pamplin, Brian |
|
1979 |
|
4 |
p. 433-434 2 p. |
artikel |
18 |
Current topics in material science: Volume 10
|
Pamplin, Brian |
|
1983 |
|
4 |
p. iii- 1 p. |
artikel |
19 |
Current topics in materials science volume 3
|
Pamplin, B.R. |
|
1980 |
|
4 |
p. i-ii nvt p. |
artikel |
20 |
Current topics in materials science volume 6
|
Shah, Jitu |
|
1981 |
|
4 |
p. iv-v nvt p. |
artikel |
21 |
Current trends in silicon research
|
Elwell, Dennis |
|
1981 |
|
4 |
p. 297-316 20 p. |
artikel |
22 |
CVD growth of InGaAs
|
Jones, Kenneth A. |
|
1986 |
|
4 |
p. 291-309 19 p. |
artikel |
23 |
Development of crystal pulling techniques in China
|
Wan, Qun |
|
1985 |
|
4 |
p. 327-333 7 p. |
artikel |
24 |
Developments in crystal growth from high-temperature solutions
|
Scheel, Hans J. |
|
1982 |
|
4 |
p. 277-290 14 p. |
artikel |
25 |
Dynamics of spraying
|
Donaghey, L.F. |
|
1979 |
|
4 |
p. 417- 1 p. |
artikel |
26 |
Editorial
|
|
|
1979 |
|
4 |
p. 329-330 2 p. |
artikel |
27 |
Editorial
|
|
|
1981 |
|
4 |
p. i-ii nvt p. |
artikel |
28 |
Erratum
|
Curtis, Bernard J. |
|
1981 |
|
4 |
p. xi- 1 p. |
artikel |
29 |
Extrinsic doping of CdxHg1−xTe— A review
|
Capper, P. |
|
1989 |
|
4 |
p. 295-337 43 p. |
artikel |
30 |
First Indian seminar on crystal growth
|
|
|
1983 |
|
4 |
p. i-ii nvt p. |
artikel |
31 |
Forthcoming conference
|
|
|
1979 |
|
4 |
p. 429-430 2 p. |
artikel |
32 |
GGG and related compounds
|
Zhang, L.H. |
|
1985 |
|
4 |
p. 283-289 7 p. |
artikel |
33 |
Growth and characterization of AIVBVI single crystals for IR technology and thermoelectric energy conversion
|
Fano, V. |
|
1980 |
|
4 |
p. 287-308 22 p. |
artikel |
34 |
Growth and characterization of BGO
|
Chongfan, He |
|
1985 |
|
4 |
p. 253-262 10 p. |
artikel |
35 |
Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-x Tex and GaxIn1-xSe
|
Gouskov, A. |
|
1982 |
|
4 |
p. 323-413 91 p. |
artikel |
36 |
Growth and spectroscopic properties of ferroelectric Pb5Ge3O11 crystals doped with neodymium
|
Liang-Ying, Xu |
|
1985 |
|
4 |
p. 237-244 8 p. |
artikel |
37 |
Growth, morphology and impurity characterisation of some I III IV2 sulphides and selenides
|
Shah, J.S. |
|
1980 |
|
4 |
p. 333-389 57 p. |
artikel |
38 |
Holographic properties and applications of electro-optical crystals
|
He, X.M. |
|
1985 |
|
4 |
p. 207-219 13 p. |
artikel |
39 |
Industrial crystallization—the state of the art
|
Underwood, F.A. |
|
1983 |
|
4 |
p. iii-iv nvt p. |
artikel |
40 |
Melt growth of metal crystals
|
Kamada, K. |
|
1980 |
|
4 |
p. 309-332 24 p. |
artikel |
41 |
Modeling the spatial structures of silicas
|
Thathachari, Y.T. |
|
1983 |
|
4 |
p. 415-423 9 p. |
artikel |
42 |
Ninth annual PCSI conference
|
|
|
1981 |
|
4 |
p. viii-ix nvt p. |
artikel |
43 |
On the behavior of copper oxides formed during dipping of a sprayed CdS layer
|
Castel, E.D. |
|
1979 |
|
4 |
p. 420- 1 p. |
artikel |
44 |
Opening remarks
|
Bube, Richard H. |
|
1979 |
|
4 |
p. 391-393 3 p. |
artikel |
45 |
Organometallics in crystal growth
|
Prakash, Hari |
|
1984 |
|
4 |
p. 427-462 36 p. |
artikel |
46 |
Phase equilibria and crystal chemistry of silver-nickel-tellurium system
|
Singh, M. |
|
1988 |
|
4 |
p. 279-295 17 p. |
artikel |
47 |
Photoelastic and electro-optic properties of crystals
|
|
|
1982 |
|
4 |
p. iii-iv nvt p. |
artikel |
48 |
Practical reflection electron diffraction
|
Russell, G.J. |
|
1982 |
|
4 |
p. 291-321 31 p. |
artikel |
49 |
Preparation and thermal conductivity of doped semiconductors
|
Rowe, D.M. |
|
1986 |
|
4 |
p. 233-289 57 p. |
artikel |
50 |
Promoting crystal growth
|
|
|
1982 |
|
4 |
p. i- 1 p. |
artikel |
51 |
Real time pseudocoloration of white-black images with Fe:LiNbO3
|
Liang-Ying, Xu |
|
1985 |
|
4 |
p. 299-303 5 p. |
artikel |
52 |
Recent progress in characterization of III–V compound semiconductors
|
Hua, Q.H. |
|
1985 |
|
4 |
p. 291-298 8 p. |
artikel |
53 |
Report on 1979 Gordon Conference on Crystal growth
|
Elwell, Denis |
|
1979 |
|
4 |
p. 427-428 2 p. |
artikel |
54 |
Second international school on semiconductor optoelectronics May 6–14, 1978 at Cetniewo/Wladyslawowo, Poland (Sponsored by the institute of physics, Polish academy of sciences, Warsaw)
|
Scheel, H.J. |
|
1979 |
|
4 |
p. 421-425 5 p. |
artikel |
55 |
Self-compensation in II–VI compounds
|
Marfaing, Y. |
|
1981 |
|
4 |
p. 317-343 27 p. |
artikel |
56 |
Solidification behaviour of organic nonlinear optical crystals
|
Singh, N.B. |
|
1988 |
|
4 |
p. 265-278 14 p. |
artikel |
57 |
Some aspects of the recent work on InP crystal growth in China
|
Dun-Fu, Fang |
|
1985 |
|
4 |
p. 229-235 7 p. |
artikel |
58 |
Spray pyrolysis of ternary and quaternary solar cell materials
|
Pamplin, B.R. |
|
1979 |
|
4 |
p. 395-403 9 p. |
artikel |
59 |
Synthetic diamond in China
|
Lichang, Qi |
|
1985 |
|
4 |
p. 245-251 7 p. |
artikel |
60 |
TeO2 crystal high resolution acousto-optical deflector for radiospectral analysis
|
Huang, Geng-chen |
|
1985 |
|
4 |
p. 275-282 8 p. |
artikel |
61 |
Ternary AIII Bv antimonides
|
Lendvay, Edmond |
|
1984 |
|
4 |
p. 371-425 55 p. |
artikel |
62 |
Ternary chalcopyrite compounds
|
Pamplin, Brian R. |
|
1979 |
|
4 |
p. 331-387 57 p. |
artikel |
63 |
The EFG growth of sapphire single crystals
|
Lian-an, Tang |
|
1985 |
|
4 |
p. 351-356 6 p. |
artikel |
64 |
The first conference on spray pyrolysis of semiconducting materials
|
Pamplin, Brian |
|
1979 |
|
4 |
p. 389-390 2 p. |
artikel |
65 |
The growth and characterization of ZnSe epilayers grown by VPE and MOCVD
|
Su, Yan-Kuin |
|
1988 |
|
4 |
p. 241-263 23 p. |
artikel |
66 |
The hydrogen-related defect-impurity complexes in c-Si grown in H2 atmosphere
|
Shi, T.S. |
|
1985 |
|
4 |
p. 221-227 7 p. |
artikel |
67 |
Thin film studies of oxides by the organometallic-CVD technique
|
Prakash, Hari |
|
1983 |
|
4 |
p. 371-391 21 p. |
artikel |
68 |
Topological classification of defects in crystals
|
Ma, K.B. |
|
1980 |
|
4 |
p. 273-285 13 p. |
artikel |
69 |
Vapour phase growth of arsenic chalcogenide crystals and their characterization
|
Ghosh, B. |
|
1983 |
|
4 |
p. 393-413 21 p. |
artikel |
70 |
ZnO/CdTe heterojunctions produced by spray pyrolysis
|
Aranovich-Magran, Julio |
|
1979 |
|
4 |
p. 419- 1 p. |
artikel |