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Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
32 gevonden resultaten
| nr | titel | auteur | tijdschrift | jaar | jaarg. | afl. | pagina('s) | type |
| 1 | An improved OM-CVD growth model for III–V semiconductors—Metalorganic halides for the CVD growth |
Prakash, Hari |
1986 |
1-4 |
p. 265-269 5 p. |
artikel |
||
| 2 | Characterization and kinetics of AlxGa1−x As by organometallic-CVD |
Prakash, Hari |
1986 |
1-4 |
p. 243-256 14 p. |
artikel |
||
| 3 | Compound index |
1986 |
1-4 |
p. 341-342 2 p. |
artikel |
|||
| 4 | Compound index |
1983 |
1-4 |
p. 501-502 2 p. |
artikel |
|||
| 5 | Editorial |
Pamplin, Brian |
1986 |
1-4 |
p. vii- 1 p. |
artikel |
||
| 6 | Editorial |
Krishna, P. |
1983 |
1-4 |
p. 3-5 3 p. |
artikel |
||
| 7 | Editorial Board |
1986 |
1-4 |
p. ii- 1 p. |
artikel |
|||
| 8 | Epitaxial growth of InP and related alloys |
Sharma, B.L. |
1986 |
1-4 |
p. 295-318 24 p. |
artikel |
||
| 9 | Foreword |
1983 |
1-4 |
p. 1- 1 p. |
artikel |
|||
| 10 | Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP |
Panish, M.B. |
1986 |
1-4 |
p. 1-28 28 p. |
artikel |
||
| 11 | Growth and characterization of AgI polytypes |
Prager, P.R. |
1983 |
1-4 |
p. 451-492 42 p. |
artikel |
||
| 12 | High resolution electron microscopy of polytypes |
Van Landuyt, J. |
1983 |
1-4 |
p. 343-378 36 p. |
artikel |
||
| 13 | Implanted silicon epitaxy by thermal and laser processing |
Campisano, Salvatore Ugo |
1986 |
1-4 |
p. 67-95 29 p. |
artikel |
||
| 14 | Liquid phase electroepitaxy of semiconductor compounds |
Bryskiewicz, T. |
1986 |
1-4 |
p. 29-43 15 p. |
artikel |
||
| 15 | LPE growth of InGaAs/InP and AiGaInAs/InP structures |
Nakajima, Kazuo |
1986 |
1-4 |
p. 97-213 117 p. |
artikel |
||
| 16 | LPE growth of InP and related alloys |
Nagai, Haruo |
1986 |
1-4 |
p. 271-294 24 p. |
artikel |
||
| 17 | LPE of buried heterostructure laser devices |
Logan, R.A. |
1986 |
1-4 |
p. 215-242 28 p. |
artikel |
||
| 18 | MOCVD AlxGa1−x As solar cells |
Prakash, Hari |
1986 |
1-4 |
p. 257-264 8 p. |
artikel |
||
| 19 | MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process |
Cheng, C.H. |
1986 |
1-4 |
p. 319-333 15 p. |
artikel |
||
| 20 | Polytypic transformations in silicon carbide |
Jepps, N.W. |
1983 |
1-4 |
p. 259-307 49 p. |
artikel |
||
| 21 | Polytypism in rare earth trialuminides: Identification by electron microscopy |
Schiffmacher, G. |
1983 |
1-4 |
p. 379-390 12 p. |
artikel |
||
| 22 | Polytypism in the III–VI layer compounds |
Terhell, J.C.J.M. |
1983 |
1-4 |
p. 55-110 56 p. |
artikel |
||
| 23 | Polytypism in zinc sulphide |
Steinberger, I.T. |
1983 |
1-4 |
p. 7-54 48 p. |
artikel |
||
| 24 | Preface |
Bachrach, Robert Z. |
1986 |
1-4 |
p. ix-x nvt p. |
artikel |
||
| 25 | Progress in controlling the growth of polytypic crystals |
Tairov, Y.M. |
1983 |
1-4 |
p. 111-162 52 p. |
artikel |
||
| 26 | Silicon molecular beam epitaxy |
Shiraki, Yasuhiro |
1986 |
1-4 |
p. 45-66 22 p. |
artikel |
||
| 27 | Structure determination of polytypes |
Farkas-Jahnke, M. |
1983 |
1-4 |
p. 163-211 49 p. |
artikel |
||
| 28 | Subject index |
1983 |
1-4 |
p. 493-499 7 p. |
artikel |
|||
| 29 | Subject index |
1986 |
1-4 |
p. 335-339 5 p. |
artikel |
|||
| 30 | The origin of polytype structures |
Pandey, D. |
1983 |
1-4 |
p. 213-258 46 p. |
artikel |
||
| 31 | The structural behaviour and physical properties of some MX2 (Cdl2 type) layered crystals |
Fernandez Samuel, A.M. |
1983 |
1-4 |
p. 391-450 60 p. |
artikel |
||
| 32 | Ti1+x S2 polytypes |
Legendre, J.J. |
1983 |
1-4 |
p. 309-342 34 p. |
artikel |
32 gevonden resultaten