| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A calculation of defect gap states on the clean (110) surfaces of some III–V semiconductors
|
Lohez, D.
|
|
1980
|
99 |
1 |
p. A333-A334
nvt p.
|
artikel
|
| 2 |
Adsorption and desorption of oxygen and carbon monoxide on the Si(111) surface studied by ion scattering spectroscopy
|
Onsgaard, J.
|
|
1980
|
99 |
1 |
p. A332-
1 p.
|
artikel
|
| 3 |
Adsorption sites and relative stabilities of the 3 × 1 and √3 phases of Ag on Si(111)
|
Barone, V.
|
|
1980
|
99 |
1 |
p. A337-A338
nvt p.
|
artikel
|
| 4 |
AES study of silicon bonding states during oxidation of Si(111)
|
Lang, B.
|
|
1980
|
99 |
1 |
p. A332-
1 p.
|
artikel
|
| 5 |
Angle-resolved photoemission of the Si(111) 7 × 7 surface
|
Houzay, F.
|
|
1980
|
99 |
1 |
p. A328-A329
nvt p.
|
artikel
|
| 6 |
Atomic structure of Si(111) surfaces
|
Chadi, D.J.
|
|
1980
|
99 |
1 |
p. A328-
1 p.
|
artikel
|
| 7 |
Binding states of zinc on the polar faces of ZnO
|
Mokwa, W.
|
|
1980
|
99 |
1 |
p. A337-
1 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
1980
|
99 |
1 |
p. IFC-
1 p.
|
artikel
|
| 9 |
Electronic and structural properties of steps on cleaved semiconductor surfaces
|
Krueger, S.
|
|
1980
|
99 |
1 |
p. A334-
1 p.
|
artikel
|
| 10 |
Electronic properties of relaxed surfaces, interfaces overlayer systems and defects at surfaces or interfaces; applications of the scattering theoretic technique
|
Pollmann, J.
|
|
1980
|
99 |
1 |
p. A335-
1 p.
|
artikel
|
| 11 |
Electronic structure of Ag adsorbed on Si(111); experiment and theory
|
Gaspard, J.P.
|
|
1980
|
99 |
1 |
p. A336-
1 p.
|
artikel
|
| 12 |
Electronic structure of Si(111) surfaces
|
Hansson, G.V.
|
|
1980
|
99 |
1 |
p. A328-
1 p.
|
artikel
|
| 13 |
Energy-band profile and interface potential step in the theory of semiconductor heterojunctions
|
Kandilarov, B.D.
|
|
1980
|
99 |
1 |
p. A335-
1 p.
|
artikel
|
| 14 |
Evidence of SiO at the Si—oxide interface by surface soft x-ray absorption near edge spectroscopy
|
Bianconi, Antonio
|
|
1980
|
99 |
1 |
p. A331-
1 p.
|
artikel
|
| 15 |
Metal-semiconductor junctions: Clean and etched interfaces
|
Louis, E.
|
|
1980
|
99 |
1 |
p. A337-
1 p.
|
artikel
|
| 16 |
Non-equilibrium surface state properties at clean cleaved silicon surface as measured by surface photovoltage
|
Kuhlmann, W.
|
|
1980
|
99 |
1 |
p. A329-
1 p.
|
artikel
|
| 17 |
Optical detection of surface states in GaAs(110) and GaP(110)
|
Chiaradia, P.
|
|
1980
|
99 |
1 |
p. A330-
1 p.
|
artikel
|
| 18 |
Optical properties of dangling-bond states at cleaved silicon surfaces
|
Assmann, J.
|
|
1980
|
99 |
1 |
p. A329-
1 p.
|
artikel
|
| 19 |
Papers presented at the conference, but not included in the proceedings
|
|
|
1980
|
99 |
1 |
p. A339-
1 p.
|
artikel
|
| 20 |
Preface
|
Balkanski, M.
|
|
1980
|
99 |
1 |
p. A327-
1 p.
|
artikel
|
| 21 |
Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces
|
Wierenga, P.E.
|
|
1980
|
99 |
1 |
p. A330-
1 p.
|
artikel
|
| 22 |
Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBE
|
Massies, J.
|
|
1980
|
99 |
1 |
p. A333-
1 p.
|
artikel
|
| 23 |
The interaction of thin Au and Al overlayers with the GaAs(110) surface
|
Lindau, I.
|
|
1980
|
99 |
1 |
p. A336-
1 p.
|
artikel
|
| 24 |
The lineshape of the L2,3 VV auger spectrum of silicon
|
Morgen, P.
|
|
1980
|
99 |
1 |
p. A331-
1 p.
|
artikel
|
| 25 |
Ultraviolet photoemission studies of chemisorption and point defect formation on ZnO nonpolar surfaces
|
Göpel, W.
|
|
1980
|
99 |
1 |
p. A334-
1 p.
|
artikel
|
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