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                             119 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Aharonov-Bohm oscillations due to quantum interference between parallel quantum wells Datta, S.
 1986
 174 1-3 p. A451-
1 p.
 artikel
2 Alloy scattering limited mobility in ultrathin wires of ternary semiconductors Basu, P.K.
 1986
 174 1-3 p. A452-
1 p.
 artikel
3 A magneto-optical absorption study of Al x Ga1−x As ternary alloy quantum wells Tarucha, Seigo
 1986
 174 1-3 p. A434-
1 p.
 artikel
4 A molecular statics and dynamics study of epitaxial growth fronts Kobayashi, A.
 1986
 174 1-3 p. A425-
1 p.
 artikel
5 Anomalous mobility enhancement in Si doping superlattices Nakagawa, Kiyokazu
 1986
 174 1-3 p. A465-
1 p.
 artikel
6 A p-channel AlGaAs/GaAs MIS-like heterostructure fet employing two-dimensional hole gas Oe, K.
 1986
 174 1-3 p. A447-
1 p.
 artikel
7 A pseudopotential approach to the thermodynamical properties of III–V semiconductor superlattices Ito, Tomonori
 1986
 174 1-3 p. A464-
1 p.
 artikel
8 Author index 1986
 174 1-3 p. A468-A480
nvt p.
 artikel
9 Band offsets at heterointerfaces: Theoretical basis, and review, of recent experimental work Kroemer, Herbert
 1986
 174 1-3 p. A442-
1 p.
 artikel
10 Band offsets at pseudo-ternary semiconductor-alloy heterojunctions Nakao, Masao
 1986
 174 1-3 p. A444-A445
nvt p.
 artikel
11 Band structure of a semimetallic HgTe-CdTe superlattice Schulman, J.N.
 1986
 174 1-3 p. A457-
1 p.
 artikel
12 Calculation of carrier transport in pseudo-quarternary alloys Weil, T.
 1986
 174 1-3 p. A455-
1 p.
 artikel
13 Characterization of GaAs/AlGaAs hot electron transistors using magnetic field effects on launched-electron transport Imamura, K.
 1986
 174 1-3 p. A454-
1 p.
 artikel
14 Charge transfer in photoexcited Al x Ga1−xAs/GaAs heterojunctions Stern, Frank
 1986
 174 1-3 p. A450-
1 p.
 artikel
15 Compositional disordering and very-fine lateral definition of GaAs-AlGaAs superlattices by focused Ga ion beams Hirayama, Y.
 1986
 174 1-3 p. A428-
1 p.
 artikel
16 Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy Yen, M.Y.
 1986
 174 1-3 p. A463-
1 p.
 artikel
17 Current prospects for the permeable base transistor Bozler, CarlO.
 1986
 174 1-3 p. A454-
1 p.
 artikel
18 CV profiling on p-p- and n-s.i.-In0.53Ga0.47As/InP heterointerfaces Steiner, K.
 1986
 174 1-3 p. A444-
1 p.
 artikel
19 Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells Munekata, H.
 1986
 174 1-3 p. A452-
1 p.
 artikel
20 Determination of band-gap discontinuity in AlGaAs/GaAs system by quantum oscillations of photoluminescence intensity Mishima, T.
 1986
 174 1-3 p. A442-
1 p.
 artikel
21 Dynamic and spectral properties of semiconductor lasers with quantum-well and quantum-wire effects Arakawa, Y.
 1986
 174 1-3 p. A431-
1 p.
 artikel
22 Editorial Board 1986
 174 1-3 p. IFC-
1 p.
 artikel
23 Effective mass filtering: new quantum photoconductivity in superlattices Capasso, F.
 1986
 174 1-3 p. A455-
1 p.
 artikel
24 Effects of layer strains in an In0.18Al0.82As-GaAs superlattice Kato, H.
 1986
 174 1-3 p. A461-
1 p.
 artikel
25 Electron concentrations and mobilities in selectively doped AlGaAs-GaAs-AlGaAs double heterostructures Burkhard, H.
 1986
 174 1-3 p. A447-
1 p.
 artikel
26 Electron-hole recombination spectra and kinetics in PbTe/PbEuTeSe multiquantum wells Goltsos, W.
 1986
 174 1-3 p. A441-
1 p.
 artikel
27 Electronic properties of Si atomic-planar-doped GaAs/AlAs quantum well structures grown by MBE Sasa, Shigehiko
 1986
 174 1-3 p. A451-
1 p.
 artikel
28 Electro-optical investigations of selectively doped heterostructure transistors (SDHTs) Höpfel, R.A.
 1986
 174 1-3 p. A448-
1 p.
 artikel
29 Energy band alignment in GaAs:(Al,Ga)As heterostructures Batey, J.
 1986
 174 1-3 p. A444-
1 p.
 artikel
30 Energy band discontinuities in heterojunctions measured by internal photoemission Heiblum, M.
 1986
 174 1-3 p. A443-
1 p.
 artikel
31 Evaluation of Al1−xInxAs-GaAs strained layer superlattices by x-ray diffractometry and excitation spectroscopy Sauvage, M.
 1986
 174 1-3 p. A460-
1 p.
 artikel
32 Excitons and their kinetics in CdTe/(Cd, Mn)Te and ZnSe/(Zn, Mn)Se quantum wells Zhang, X.-C.
 1986
 174 1-3 p. A441-
1 p.
 artikel
33 Executive members of the foundation (1985) 1986
 174 1-3 p. A422-
1 p.
 artikel
34 Experimental and theoretical studies of the 2DEG mobility in modulation-doped GaAs/Al1−xGa x As heterostructures Lin, B.J.F.
 1986
 174 1-3 p. A448-
1 p.
 artikel
35 Extrinsic photoluminescence of GaAs-GaAlAs quantum wells Xu, Z.Y.
 1986
 174 1-3 p. A435-A436
nvt p.
 artikel
36 GaAs/(AlGa)As tunnelling devices: hydrostatic pressure investigation and model for the J(V) characteristics Taylor, D.C.
 1986
 174 1-3 p. A453-
1 p.
 artikel
37 Generalized theory of impact ionization in multilayered semiconductor structures Brennan, Kevin
 1986
 174 1-3 p. A456-
1 p.
 artikel
38 Giant oscillations and increase of the photoluminescence efficiency of GaAs-AlGaAs modulation-doped multiquantum wells as a function of axial magnetic field Smith, M.C.
 1986
 174 1-3 p. A430-
1 p.
 artikel
39 Ground impurity level in GaAs-AlGaAs superlattices Ioriatti, Lidério
 1986
 174 1-3 p. A449-
1 p.
 artikel
40 Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE Akiyama, Masahiro
 1986
 174 1-3 p. A423-
1 p.
 artikel
41 Growth and properties of Si/SiGe superlattices Kasper, E.
 1986
 174 1-3 p. A464-
1 p.
 artikel
42 Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy Takeda, T.
 1986
 174 1-3 p. A458-
1 p.
 artikel
43 HEMT technology: Potential and advances Mimura, T.
 1986
 174 1-3 p. A445-
1 p.
 artikel
44 HgTe-CdTe superlattices as a new infrared material Faurie, J.P.
 1986
 174 1-3 p. A457-
1 p.
 artikel
45 High contrast TEM observation of lattice image of GaAs-AlGaAs superlattice with [100] electron beam incidence Suzuki, Y.
 1986
 174 1-3 p. A427-
1 p.
 artikel
46 High field transient transport in modulation doped heterostructures Yokoyama, Kiyoyuki
 1986
 174 1-3 p. A445-
1 p.
 artikel
47 High-mobility two-dimensional electron gas in modulation-doped InAlAs/InGaAs heterostructures Onabe, Kentaro
 1986
 174 1-3 p. A449-
1 p.
 artikel
48 High-resolution double-crystal x-ray diffraction for improved assessment of modulated semiconductor structures Tapfer, L.
 1986
 174 1-3 p. A427-
1 p.
 artikel
49 Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers Kanemaru, Seigo
 1986
 174 1-3 p. A466-
1 p.
 artikel
50 (InAs)m(GaAs)n superlattice grown by beam-separation MBE method Matsui, Y.
 1986
 174 1-3 p. A462-
1 p.
 artikel
51 Infrared photoluminescence spectra from HgTe-CdTe superlattices Hetzler, S.R.
 1986
 174 1-3 p. A457-
1 p.
 artikel
52 In situ RHEED observation of selective diminution at Si(001)-2 × 1 superlattice spots during MBE Aizaki, Naoaki
 1986
 174 1-3 p. A466-
1 p.
 artikel
53 Interface disorder in GaAs/AlGaAs quantum wells grown by MBE Hayakawa, T.
 1986
 174 1-3 p. A426-
1 p.
 artikel
54 Internal photoemission — A suitable method for determining band offsets in semiconductor heterostructures Abstreiter, G.
 1986
 174 1-3 p. A443-
1 p.
 artikel
55 Investigation of luminescence and non-linear optical properties of hetero n-i-p-i superlattices Dohler, GottfriedH.
 1986
 174 1-3 p. A437-
1 p.
 artikel
56 Kinetic and thermodynamic aspects of metal organic MBE Heckingbottom, R.
 1986
 174 1-3 p. A424-
1 p.
 artikel
57 Lattice distortions in GaAs-AlAs and GaAs-InAs superlattices Terauchi, Hikaru
 1986
 174 1-3 p. A462-
1 p.
 artikel
58 Long-wavelength optical modulation in multiple quantum wells Wakita, K.
 1986
 174 1-3 p. A436-
1 p.
 artikel
59 Magneto-optical determination of the exciton binding energy in GaAs quantum wells Ossau, W.
 1986
 174 1-3 p. A433-
1 p.
 artikel
60 Magnetotunneling from accumulation layers in Al x Ga1−xAs capacitors Hickmott, T.W.
 1986
 174 1-3 p. A453-
1 p.
 artikel
61 MBE growth and energy levels of quantum wells with special shapes Gossard, A.C.
 1986
 174 1-3 p. A430-
1 p.
 artikel
62 New electron microscopy for composition analysis of GaAs/Al x Ga1−x As heterointerfaces Kakibayashi, H.
 1986
 174 1-3 p. A427-
1 p.
 artikel
63 Non-equilibrium cyclotron resonances in GaInAs/InP two-dimensional electron gas Yamada, Syoji
 1986
 174 1-3 p. A451-
1 p.
 artikel
64 Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces Wang, W.I.
 1986
 174 1-3 p. A424-
1 p.
 artikel
65 Novel optical modulators and bistable devices using the self-electro-optic effect in semiconductor quantum wells Miller, D.A.B.
 1986
 174 1-3 p. A436-
1 p.
 artikel
66 Optical processes in semiconductor quantum wells Delalande, C.
 1986
 174 1-3 p. A429-
1 p.
 artikel
67 Optical study of MBE grown (InAs)m(GaAs)n superlattice alloy on GaAs and of InxGa1−xAs/InyGa1−yAs structures on InP Marzin, J.Y.
 1986
 174 1-3 p. A461-
1 p.
 artikel
68 Oscillator strength of excitons in quantum wells Matsuura, Mitsuru
 1986
 174 1-3 p. A433-
1 p.
 artikel
69 Photocurrent and picosecond photoluminescence spectroscopy in GaAs/AlGaAs quantum wells Polland, H.-J.
 1986
 174 1-3 p. A440-
1 p.
 artikel
70 Photocurrent spectroscopic observation of interband transitions in GaAs-AlGaAs quantum wells under an applied high electric field Yamanaka, K.
 1986
 174 1-3 p. A438-
1 p.
 artikel
71 Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothing Tanaka, M.
 1986
 174 1-3 p. A425-A426
nvt p.
 artikel
72 Photoluminescence of GaAs-AlGaAs multiple quantum well structures under high excitation by a single shot of 30 ps, 532 nm laser Uchiki, H.
 1986
 174 1-3 p. A439-
1 p.
 artikel
73 Picosecond spectroscopy of two-dimensional excitons in GaAs- and Al x Ga1−xAs-AlAs multi-quantum-well structures Masumoto, Yasuaki
 1986
 174 1-3 p. A440-
1 p.
 artikel
74 Polaron transport in quasi-one-dimensional semiconductor heterostructures Hellman, E.S.
 1986
 174 1-3 p. A452-A453
nvt p.
 artikel
75 Preface Sakaki, Hiroyuki
 1986
 174 1-3 p. A419-A420
nvt p.
 artikel
76 Preparation and properties of a new GaAs sawtooth doping superlattice Ploog, K.
 1986
 174 1-3 p. A429-A430
nvt p.
 artikel
77 Probing the structure of semiconductor superlattices and heterostructures Kao, Y.H.
 1986
 174 1-3 p. A460-
1 p.
 artikel
78 Properties of and prospects for the GaAs gate heterojunction fet Solomon, P.M.
 1986
 174 1-3 p. A446-
1 p.
 artikel
79 Properties of 2D quantum well lasers Nagle, J.
 1986
 174 1-3 p. A431-
1 p.
 artikel
80 Properties of ZnTe-ZnSe and -ZnS superlattices prepared by hot wall epitaxy Fujiyasu, Hiroshi
 1986
 174 1-3 p. A458-
1 p.
 artikel
81 Proposal of novel triode device using metal-insulator superlattice for extremely high speed response Nakata, Yasuyuki
 1986
 174 1-3 p. A456-
1 p.
 artikel
82 Pseudo-alloy behavior of InAs-GaAs strained-layer superlattices Voisin, P.
 1986
 174 1-3 p. A463-
1 p.
 artikel
83 Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility Woodall, J.M.
 1986
 174 1-3 p. A448-
1 p.
 artikel
84 Quasi-two-dimensional electron-hole plasma in GaAs-GaAlAs MQW structures: band-filling effects and band-gap renormalization Tränkle, G.
 1986
 174 1-3 p. A435-
1 p.
 artikel
85 Raman scattering on confined optical phonons in superlattices: A tool for studying interface thickness Jusserand, Bernard
 1986
 174 1-3 p. A428-
1 p.
 artikel
86 Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures Christen, J.
 1986
 174 1-3 p. A439-
1 p.
 artikel
87 Reduction of Auger effect by GaSb quantum well lasers in the 1.5 μm wavelength region Sugimura, Akira
 1986
 174 1-3 p. A432-
1 p.
 artikel
88 Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy Fukunaga, T.
 1986
 174 1-3 p. A426-
1 p.
 artikel
89 Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor Ohno, H.
 1986
 174 1-3 p. A462-
1 p.
 artikel
90 Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface Okumura, H.
 1986
 174 1-3 p. A444-
1 p.
 artikel
91 Resonant Raman scattering in GaAs-AlGaAs and GaAs-AlAs multi-quantum well structures and its dependence on electric field Furuta, T.
 1986
 174 1-3 p. A434-
1 p.
 artikel
92 RHEED intensity oscillations during silicon MBE growth Sakamoto, T.
 1986
 174 1-3 p. A466-
1 p.
 artikel
93 Room-temperature observation of exciton and its electric field effect in GaSb-Al x Ga1−x Sb multi quantum wells Miyazawa, T.
 1986
 174 1-3 p. A437-
1 p.
 artikel
94 Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure Baba, Toshio
 1986
 174 1-3 p. A449-
1 p.
 artikel
95 Size-indduced direct-to-indirect gap transition in GaSb/AlSb multiple quantum well structures Forchel, A.
 1986
 174 1-3 p. A430-
1 p.
 artikel
96 Solid-phase epitaxy of NiSi2 layer on Si(111) substrate from Si/Ni multi-layer structure prepared by molecular beam deposition Ishizaka, Akitoshi
 1986
 174 1-3 p. A467-
1 p.
 artikel
97 Spectroscopy of excitons and phonons in quantum well heterostructures Zucker, J.E.
 1986
 174 1-3 p. A433-
1 p.
 artikel
98 Steady-state and picosecond investigation of hot carrier-phonon interactions in 2D systems Shah, J.
 1986
 174 1-3 p. A446-
1 p.
 artikel
99 Strained-layer effective-mass superlattices Sasaki, Akio
 1986
 174 1-3 p. A464-
1 p.
 artikel
100 Subband structures of high mobility electrons in selectively-doped AlGaAs/GaAs/AlGaAs double-heterojunction fet systems Inoue, K.
 1986
 174 1-3 p. A447-
1 p.
 artikel
101 Subject index 1986
 174 1-3 p. A481-A500
nvt p.
 artikel
102 Superlattice structures grown by metalorganic MBE Tokumitsu, E.
 1986
 174 1-3 p. A424-
1 p.
 artikel
103 Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells Glembocki, O.J.
 1986
 174 1-3 p. A435-
1 p.
 artikel
104 The determination of MBE growth mechanisms using dynamic RHEED techniques Joyce, B.A.
 1986
 174 1-3 p. A422-
1 p.
 artikel
105 Theory of Auger recombination in a quantum well wire Taylor, R.I.
 1986
 174 1-3 p. A432-
1 p.
 artikel
106 Theory of valence subbands in GaAs heterostructures Sham, L.J.
 1986
 174 1-3 p. A429-
1 p.
 artikel
107 The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/Al x Ga1−x As(100) modulated structures Lee, T.C.
 1986
 174 1-3 p. A425-
1 p.
 artikel
108 Transient photovoltaic effect in InAs-GaSb superlattices Voisin, P.
 1986
 174 1-3 p. A438-
1 p.
 artikel
109 Transient response of photoluminescence to an electric field in a GaAs/Al0.7Ga0.3As single quantum well: Evidence for field-induced increase in carrier lifetime Yamanishi, Masamichi
 1986
 174 1-3 p. A437-A438
nvt p.
 artikel
110 Transport and magneto-optical properties of PbTe doping superlattices Pichler, P.
 1986
 174 1-3 p. A459-A460
nvt p.
 artikel
111 Transport involving superlattice minibands Davies, R.A.
 1986
 174 1-3 p. A455-
1 p.
 artikel
112 Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature Nathan, M.I.
 1986
 174 1-3 p. A450-
1 p.
 artikel
113 Tunneling hot electron transfer amplifiers (theta): ballistic GaAs devices with current gain Heiblum, M.
 1986
 174 1-3 p. A454-
1 p.
 artikel
114 Two-dimensional electron systems in Si/SixGe1-x strained-layer superlattices Abstreiter, G.
 1986
 174 1-3 p. A465-
1 p.
 artikel
115 Ultrasharp interfaces grown with Van Der Waals epitaxy Koma, Atsushi
 1986
 174 1-3 p. A459-
1 p.
 artikel
116 Ultrathin GaAs/GaAlAs layers grown by MOCVD and their structural characterization Watanabe, N.
 1986
 174 1-3 p. A423-
1 p.
 artikel
117 Word of welcome Nagamiya, Takeo
 1986
 174 1-3 p. A421-
1 p.
 artikel
118 ZnSe-ZnMnSe and CdTe-CdMnTe superlattices Gunshor, R.L.
 1986
 174 1-3 p. A456-
1 p.
 artikel
119 ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy Kobayashi, Masakazu
 1986
 174 1-3 p. A459-
1 p.
 artikel
                             119 gevonden resultaten
 
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