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                             46 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A novel method for the study of optical properties of surfaces Amer, NabilM.
 1983
 132 1-3 p. A338-
1 p.
 artikel
2 Author index 1983
 132 1-3 p. A353-A355
nvt p.
 artikel
3 Carrier confinement effects Price, PeterJ.
 1983
 132 1-3 p. A351-
1 p.
 artikel
4 Chemisorption-induced defects at interfaces on compound semiconductors Mönch, W.
 1983
 132 1-3 p. A339-A340
nvt p.
 artikel
5 Computer modelling of high barrier schottky diodes applied to study of the accuracy of experimental barrier determination Tove, P.A.
 1983
 132 1-3 p. A343-
1 p.
 artikel
6 Dipoles, defects and interfaces Zur, A.
 1983
 132 1-3 p. A347-
1 p.
 artikel
7 Editorial Board 1983
 132 1-3 p. IFC-
1 p.
 artikel
8 Effect of temperature on the Ge/GaAs(110) interface formation Chen, Ping
 1983
 132 1-3 p. A349-
1 p.
 artikel
9 Electronic properties and surface geometry of GaAs and ZnO surfaces Jacobi, K.
 1983
 132 1-3 p. A336-
1 p.
 artikel
10 Electronic structure of Si(111) surfaces Himpsel, F.J.
 1983
 132 1-3 p. A336-
1 p.
 artikel
11 Electronic surface states at steps in Si(111)2×1 Chiaradia, P.
 1983
 132 1-3 p. A338-
1 p.
 artikel
12 Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures Störmer, H.L.
 1983
 132 1-3 p. A350-
1 p.
 artikel
13 Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: some basic concepts and Monte-Carlo computer simulations Madhukar, A.
 1983
 132 1-3 p. A345-
1 p.
 artikel
14 Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): thermodynamic and kinetic aspects Heckingbottom, R.
 1983
 132 1-3 p. A345-
1 p.
 artikel
15 Heterostructure devices: a device physicist looks at interfaces Kroemer, Herbert
 1983
 132 1-3 p. A351-
1 p.
 artikel
16 Injection dependence of quasiballistic transport in GaAs at 77 K Hesto, P.
 1983
 132 1-3 p. A352-
1 p.
 artikel
17 Interface states at the SiO2-Si interface Schulz, M.
 1983
 132 1-3 p. A347-
1 p.
 artikel
18 Introduction Bauer, RobertS.
 1983
 132 1-3 p. A333-A335
nvt p.
 artikel
19 Local structure of adsorbates on semiconductor surfaces using SEXAFS: a brief summary 1983
 132 1-3 p. A341-
1 p.
 artikel
20 Low temperature LEED and electric conductivity measurements for cleaved Si(111) surfaces Aristov, V.Yu.
 1983
 132 1-3 p. A339-
1 p.
 artikel
21 Microscopic properties and behavior of silicide interfaces Rubloff, GaryW.
 1983
 132 1-3 p. A343-
1 p.
 artikel
22 New device applications of bandedge discontinuities in multilayer heterojunction structures Capasso, Federico
 1983
 132 1-3 p. A350-
1 p.
 artikel
23 On the adjustability of the “abrupt” heterojunction band-gap discontinuity Bauer, RobertS.
 1983
 132 1-3 p. A348-A349
nvt p.
 artikel
24 Photoemission studies of surface states on Si(111) 2×1 Hansson, G.V.
 1983
 132 1-3 p. A337-
1 p.
 artikel
25 Physics and electronics of the noble-metal/elemental-semiconductor interface formation: a status report Le Lay, G.
 1983
 132 1-3 p. A341-
1 p.
 artikel
26 Preface Frova, A.
 1983
 132 1-3 p. A331-A332
nvt p.
 artikel
27 Recombination at semiconductor surfaces and interfaces Aspnes, D.E.
 1983
 132 1-3 p. A346-
1 p.
 artikel
28 Schottky barrier amorphous-crystalline interface formation Thompson, MalcolmJ.
 1983
 132 1-3 p. A342-
1 p.
 artikel
29 Schottky barrier: models and “tests” Freeouf, J.L.
 1983
 132 1-3 p. A342-
1 p.
 artikel
30 Semiconductors with hetero-n-i-p-i superlattices Ruden, P.
 1983
 132 1-3 p. A350-
1 p.
 artikel
31 Si-Cr and Si-Pd interface reaction and bulk electronic structure of Ti, V, Cr, Co, Ni, and Pd silicides Franciosi, A.
 1983
 132 1-3 p. A344-
1 p.
 artikel
32 Simple dipole model for barrier heights of silicide-silicon and meta-silicon barriers Tove, P.A.
 1983
 132 1-3 p. A344-
1 p.
 artikel
33 Si(111) 2×1 studies by angle resolved photoemission Houzay, F.
 1983
 132 1-3 p. A337-
1 p.
 artikel
34 Spot profile analysis (LEED) of defects at silicon surfaces Henzler, M.
 1983
 132 1-3 p. A339-
1 p.
 artikel
35 Subject index 1983
 132 1-3 p. A356-A360
nvt p.
 artikel
36 Surface defects on semiconductors Williams, R.H.
 1983
 132 1-3 p. A340-
1 p.
 artikel
37 Surface fermi level of III–V compound semiconductor-dielectric interfaces Wieder, H.H.
 1983
 132 1-3 p. A346-
1 p.
 artikel
38 Systematics of chemical structure and schottky barriers at compound semiconductor-metal interfaces Brillson, L.J.
 1983
 132 1-3 p. A341-A342
nvt p.
 artikel
39 The π-bonded chain-model for Si(111)-(2×1) in view of recent wavevector-resolved electron energy loss spectra Lüth, H.
 1983
 132 1-3 p. A337-
1 p.
 artikel
40 The electron states in the Si(111)-Pd interface: towards a reassessment of the experimental information Braicovich, L.
 1983
 132 1-3 p. A343-
1 p.
 artikel
41 The formation of interfaces on GaAs and related semiconductors: a reassessment Ludeke, R.
 1983
 132 1-3 p. A340-
1 p.
 artikel
42 The heterojunction parameters from a microscopic point of view Margaritondo, G.
 1983
 132 1-3 p. A348-
1 p.
 artikel
43 The mott insulator model of the Si(111)-(2×1) surface Redondo, Antonio
 1983
 132 1-3 p. A338-
1 p.
 artikel
44 The role of boundaries on high speed compound semiconductor devices Grubin, H.L.
 1983
 132 1-3 p. A352-
1 p.
 artikel
45 Traps at interfaces betweeen GaAs n-type LPE layers and different substrates Baston, J.
 1983
 132 1-3 p. A347-
1 p.
 artikel
46 Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions Waldrop, J.R.
 1983
 132 1-3 p. A349-
1 p.
 artikel
                             46 gevonden resultaten
 
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