| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current
|
Pinkie, Benjamin
|
|
2016
|
45 |
9 |
p. 4631-4639
|
artikel
|
| 2 |
Analysis of Etched CdZnTe Substrates
|
Benson, J. D.
|
|
2016
|
45 |
9 |
p. 4502-4510
|
artikel
|
| 3 |
Analysis of III–V Superlattice nBn Device Characteristics
|
Rhiger, David R.
|
|
2016
|
45 |
9 |
p. 4646-4653
|
artikel
|
| 4 |
Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy
|
Perera, A. G. U.
|
|
2016
|
45 |
9 |
p. 4626-4630
|
artikel
|
| 5 |
CdTe Photovoltaics for Sustainable Electricity Generation
|
Munshi, Amit
|
|
2016
|
45 |
9 |
p. 4612-4619
|
artikel
|
| 6 |
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors
|
Vallone, Marco
|
|
2016
|
45 |
9 |
p. 4524-4531
|
artikel
|
| 7 |
Confirmation of Auger-1 Minority-Carrier Lifetimesin Hg0.77Cd0.23Te and Prediction of Dark Currentfor Long-Wave Infrared Focal-Plane Arrays
|
Destefanis, V.
|
|
2016
|
45 |
9 |
p. 4511-4517
|
artikel
|
| 8 |
Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration
|
Song, P. Y.
|
|
2016
|
45 |
9 |
p. 4711-4715
|
artikel
|
| 9 |
Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates
|
Park, J. H.
|
|
2016
|
45 |
9 |
p. 4620-4625
|
artikel
|
| 10 |
Dislocation Reduction in HgCdTe Mesa Structures Formedon CdTe/Si
|
Simingalam, Sina
|
|
2016
|
45 |
9 |
p. 4668-4673
|
artikel
|
| 11 |
Dry etched SiO2 Mask for HgCdTe Etching Process
|
Chen, Y. Y.
|
|
2016
|
45 |
9 |
p. 4705-4710
|
artikel
|
| 12 |
Dynamics of Kinetically Limited Strain and Threading Dislocations in Temperature- and Compositionally Graded ZnSSe/GaAs (001) Metamorphic Heterostructures
|
Kujofsa, Tedi
|
|
2016
|
45 |
9 |
p. 4580-4586
|
artikel
|
| 13 |
Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology
|
Sun, Quanzhi
|
|
2016
|
45 |
9 |
p. 4674-4679
|
artikel
|
| 14 |
Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation
|
Qiao, H.
|
|
2016
|
45 |
9 |
p. 4640-4645
|
artikel
|
| 15 |
Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays
|
Mouzali, S.
|
|
2016
|
45 |
9 |
p. 4607-4611
|
artikel
|
| 16 |
HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements
|
Gravrand, O.
|
|
2016
|
45 |
9 |
p. 4532-4541
|
artikel
|
| 17 |
High-Operating Temperature HgCdTe: A Vision for the Near Future
|
Lee, D.
|
|
2016
|
45 |
9 |
p. 4587-4595
|
artikel
|
| 18 |
High-Quality AgGaTe2 Layers on Si Substrates with Ag2Te Buffer Layers
|
Uruno, Aya
|
|
2016
|
45 |
9 |
p. 4692-4696
|
artikel
|
| 19 |
High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector
|
Ting, David Z.
|
|
2016
|
45 |
9 |
p. 4680-4685
|
artikel
|
| 20 |
Hole Transport in Arsenic-Doped Hg1−xCdxTe with x ≥ 0.5
|
Umana-Membreno, G. A.
|
|
2016
|
45 |
9 |
p. 4686-4691
|
artikel
|
| 21 |
Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices
|
Krishnamurthy, Srini
|
|
2016
|
45 |
9 |
p. 4574-4579
|
artikel
|
| 22 |
Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe
|
Gu, R.
|
|
2016
|
45 |
9 |
p. 4596-4602
|
artikel
|
| 23 |
Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays
|
He, J. L.
|
|
2016
|
45 |
9 |
p. 4552-4556
|
artikel
|
| 24 |
Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride
|
Apte, Palash
|
|
2016
|
45 |
9 |
p. 4497-4501
|
artikel
|
| 25 |
MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM
|
Hanna, S.
|
|
2016
|
45 |
9 |
p. 4542-4551
|
artikel
|
| 26 |
Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations
|
Kerlain, A.
|
|
2016
|
45 |
9 |
p. 4557-4562
|
artikel
|
| 27 |
Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory
|
Lesmanne, Emeline
|
|
2016
|
45 |
9 |
p. 4603-4606
|
artikel
|
| 28 |
Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy
|
Fourreau, Y.
|
|
2016
|
45 |
9 |
p. 4518-4523
|
artikel
|
| 29 |
Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors
|
Schuster, J.
|
|
2016
|
45 |
9 |
p. 4654-4662
|
artikel
|
| 30 |
Opto-electronic Properties of Mid-Wavelength: n Type II InAs/InAs1−xSbx and Hg1−xCdxTe
|
Wames, Roger E. De
|
|
2016
|
45 |
9 |
p. 4697-4704
|
artikel
|
| 31 |
Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors
|
Zhang, Peng
|
|
2016
|
45 |
9 |
p. 4716-4720
|
artikel
|
| 32 |
Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology
|
Kopytko, M.
|
|
2016
|
45 |
9 |
p. 4563-4573
|
artikel
|
| 33 |
Surface Leakage Mechanisms in III–V Infrared Barrier Detectors
|
Sidor, D. E.
|
|
2016
|
45 |
9 |
p. 4663-4667
|
artikel
|
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