| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes
|
Rivera, Abdiel
|
|
2013
|
42 |
5 |
p. 894-900
|
artikel
|
| 2 |
Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
|
Imai, D.
|
|
2013
|
42 |
5 |
p. 875-881
|
artikel
|
| 3 |
Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC
|
Wu, Fangzhen
|
|
2012
|
42 |
5 |
p. 787-793
|
artikel
|
| 4 |
Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron Spectroscopy
|
Atewologun, Ayomide
|
|
2013
|
42 |
5 |
p. 809-814
|
artikel
|
| 5 |
Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin Films
|
Tanaka, H.
|
|
2013
|
42 |
5 |
p. 844-848
|
artikel
|
| 6 |
Conduction- and Valence-Band Energies in Bulk InAs1−xSbx and Type II InAs1−xSbx/InAs Strained-Layer Superlattices
|
Lin, Youxi
|
|
2013
|
42 |
5 |
p. 918-926
|
artikel
|
| 7 |
Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates
|
Suvarna, Puneet
|
|
2013
|
42 |
5 |
p. 854-858
|
artikel
|
| 8 |
Double-Pulsed Growth of InN by RF-MBE
|
Kraus, Andreas
|
|
2013
|
42 |
5 |
p. 849-853
|
artikel
|
| 9 |
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
|
Bryan, Zachary
|
|
2012
|
42 |
5 |
p. 815-819
|
artikel
|
| 10 |
Formation of Nanodimensional 3C-SiC Structuresfrom Rice Husks
|
Gorzkowski, E. P.
|
|
2013
|
42 |
5 |
p. 799-804
|
artikel
|
| 11 |
Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%)
|
Samberg, J. P.
|
|
2012
|
42 |
5 |
p. 912-917
|
artikel
|
| 12 |
Growth and Characterization of InxGa1−xN Multiple Quantum Wells Without Phase Separation
|
Wadekar, P. V.
|
|
2013
|
42 |
5 |
p. 838-843
|
artikel
|
| 13 |
Growth of AgGaTe2 Layers by a Closed-SpaceSublimation Method
|
Uruno, Aya
|
|
2013
|
42 |
5 |
p. 859-862
|
artikel
|
| 14 |
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
|
Leathersich, Jeffrey M.
|
|
2013
|
42 |
5 |
p. 833-837
|
artikel
|
| 15 |
Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires
|
Laskar, Masihhur R.
|
|
2013
|
42 |
5 |
p. 863-867
|
artikel
|
| 16 |
Nanoplasmonic Enhanced ZnO/Si HeterojunctionMetal–Semiconductor–Metal Photodetectors
|
Tong, Chong
|
|
2013
|
42 |
5 |
p. 889-893
|
artikel
|
| 17 |
Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes
|
Liu, Jie
|
|
2013
|
42 |
5 |
p. 805-808
|
artikel
|
| 18 |
Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
|
Reuters, Benjamin
|
|
2013
|
42 |
5 |
p. 826-832
|
artikel
|
| 19 |
Quantitative Comparison Between Dislocation Densitiesin Offcut 4H-SiC Wafers Measured Using SynchrotronX-ray Topography and Molten KOH Etching
|
Wang, Huanhuan
|
|
2013
|
42 |
5 |
p. 794-798
|
artikel
|
| 20 |
Room-Temperature Quantum Cascade Laser: ZnO/Zn1−xMgxO Versus GaN/AlxGa1−xN
|
Chou, Hung Chi
|
|
2013
|
42 |
5 |
p. 882-888
|
artikel
|
| 21 |
Si Doping of GaN in Hydride Vapor-Phase Epitaxy
|
Richter, E.
|
|
2012
|
42 |
5 |
p. 820-825
|
artikel
|
| 22 |
Synthesis and Characterization of Luminescent Eu(TTA)3phen in a Poly(ethylene oxide) Matrix for Detecting Traces of Water
|
Choi, Pu-Reun
|
|
2013
|
42 |
5 |
p. 927-930
|
artikel
|
| 23 |
Synthesis, Structures, and Multiferroic Properties of Strontium Hexaferrite Ceramics
|
Tan, Guolong
|
|
2013
|
42 |
5 |
p. 906-911
|
artikel
|
| 24 |
Toward Discrete Axial p–n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
|
Brubaker, Matt D.
|
|
2013
|
42 |
5 |
p. 868-874
|
artikel
|
| 25 |
Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications
|
Ozcelik, Adem
|
|
2012
|
42 |
5 |
p. 901-905
|
artikel
|
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