| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab Initio Studies of the Unreconstructed Polar CdTe (111) Surface
|
Li, Jin
|
|
2012
|
41 |
10 |
p. 2745-2753
|
artikel
|
| 2 |
A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy
|
Kim, Kwang-Chon
|
|
2012
|
41 |
10 |
p. 2795-2798
|
artikel
|
| 3 |
Colloidal HgTe Material for Low-Cost Detection into the MWIR
|
Lhuillier, Emmanuel
|
|
2012
|
41 |
10 |
p. 2725-2729
|
artikel
|
| 4 |
Crosstalk Modeling of Small-Pitch Two-Color HgCdTe Photodetectors
|
Wehner, J.G.A.
|
|
2012
|
41 |
10 |
p. 2925-2927
|
artikel
|
| 5 |
Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
|
Cervera, C.
|
|
2012
|
41 |
10 |
p. 2714-2718
|
artikel
|
| 6 |
Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate
|
Yasuda, K.
|
|
2012
|
41 |
10 |
p. 2754-2758
|
artikel
|
| 7 |
Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector
|
Itsuno, Anne M.
|
|
2012
|
41 |
10 |
p. 2886-2892
|
artikel
|
| 8 |
Determination of the Temperature Dependence of the Band Gap Energy of Semiconductors from Transmission Spectra
|
Wei, Jean
|
|
2012
|
41 |
10 |
p. 2857-2866
|
artikel
|
| 9 |
Development of MBE II–VI Epilayers on GaAs(211)B
|
Jacobs, R.N.
|
|
2012
|
41 |
10 |
p. 2707-2713
|
artikel
|
| 10 |
Dynamical X-ray Diffraction from ZnSySe1−y/GaAs (001) Multilayers and Superlattices with Dislocations
|
Rago, P.B.
|
|
2012
|
41 |
10 |
p. 2846-2851
|
artikel
|
| 11 |
Electrooptical Characterization of MWIR InAsSb Detectors
|
D’Souza, A.I.
|
|
2012
|
41 |
10 |
p. 2671-2678
|
artikel
|
| 12 |
FeZnO-Based Resistive Switching Devices
|
Zhang, Yang
|
|
2012
|
41 |
10 |
p. 2880-2885
|
artikel
|
| 13 |
Foreword
|
Sivananthan, S.
|
|
2012
|
41 |
10 |
p. 2661-2662
|
artikel
|
| 14 |
Growth and Analysis of HgCdTe on Alternate Substrates
|
Benson, J.D.
|
|
2012
|
41 |
10 |
p. 2971-2974
|
artikel
|
| 15 |
Growth of Lattice-Matched ZnTeSe Alloys on (100)and (211)B GaSb
|
Chai, J.
|
|
2012
|
41 |
10 |
p. 2738-2744
|
artikel
|
| 16 |
HgCdTe Molecular Beam Epitaxy Growth Temperature Calibration Using Spectroscopic Ellipsometry
|
Vilela, M.F.
|
|
2012
|
41 |
10 |
p. 2937-2942
|
artikel
|
| 17 |
High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass
|
Colegrove, E.
|
|
2012
|
41 |
10 |
p. 2833-2837
|
artikel
|
| 18 |
High-Resolution Mobility Spectrum Analysis of Multicarrier Transport in Advanced Infrared Materials
|
Antoszewski, J.
|
|
2012
|
41 |
10 |
p. 2816-2823
|
artikel
|
| 19 |
Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior
|
Chan, P.-Y.
|
|
2012
|
41 |
10 |
p. 2810-2815
|
artikel
|
| 20 |
Influence of Surface Polishing on the Structural and Electronic Properties of CdZnTe Surfaces
|
Aqariden, F.
|
|
2012
|
41 |
10 |
p. 2893-2898
|
artikel
|
| 21 |
Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
|
Hossain, A.
|
|
2012
|
41 |
10 |
p. 2908-2911
|
artikel
|
| 22 |
I–V and Differential Conduction Characteristicsof an AlGaAs/GaAs Lateral Quantum Dot Infrared Photodetector
|
Guidry, D.H.
|
|
2012
|
41 |
10 |
p. 2679-2685
|
artikel
|
| 23 |
Laser-Assisted Chemical Polishing of Silicon (112) Wafers
|
Dandekar, Niru
|
|
2012
|
41 |
10 |
p. 2790-2794
|
artikel
|
| 24 |
MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate
|
Chen, Yuanping
|
|
2012
|
41 |
10 |
p. 2917-2924
|
artikel
|
| 25 |
MBE Growth of MCT on GaAs Substrates at AIM
|
Wenisch, J.
|
|
2012
|
41 |
10 |
p. 2828-2832
|
artikel
|
| 26 |
MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry
|
Aqariden, F.
|
|
2012
|
41 |
10 |
p. 2700-2706
|
artikel
|
| 27 |
Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates
|
Maloney, P.G.
|
|
2012
|
41 |
10 |
p. 2785-2789
|
artikel
|
| 28 |
Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) Substrates
|
Zhao, W. F.
|
|
2012
|
41 |
10 |
p. 2852-2856
|
artikel
|
| 29 |
Modeling and Design of a Thin-Film CdTe/Ge TandemSolar Cell
|
Sharp, James
|
|
2012
|
41 |
10 |
p. 2759-2765
|
artikel
|
| 30 |
Modulation Transfer Function Measurement of Infrared Focal-Plane Arrays with Small Fill Factors
|
Barrière, Florence de la
|
|
2012
|
41 |
10 |
p. 2730-2737
|
artikel
|
| 31 |
Numerical Estimations of Carrier Generation–Recombination Processes and the Photon Recycling Effect in HgCdTe Heterostructure Photodiodes
|
Jóźwikowski, K.
|
|
2012
|
41 |
10 |
p. 2766-2774
|
artikel
|
| 32 |
Numerical Simulation of InAs nBn Back-Illuminated Detectors
|
Schuster, Jonathan
|
|
2012
|
41 |
10 |
p. 2981-2991
|
artikel
|
| 33 |
Optical and Electrical Studies of the Double AcceptorLevels of the Mercury Vacancies in HgCdTe
|
Gemain, F.
|
|
2012
|
41 |
10 |
p. 2867-2873
|
artikel
|
| 34 |
Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes
|
Kerlain, A.
|
|
2012
|
41 |
10 |
p. 2943-2948
|
artikel
|
| 35 |
Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors
|
Yang, G.
|
|
2012
|
41 |
10 |
p. 2912-2916
|
artikel
|
| 36 |
Quantum Dot Channel (QDC) Field-Effect Transistors (FETs) Using II–VI Barrier Layers
|
Jain, F.
|
|
2012
|
41 |
10 |
p. 2775-2784
|
artikel
|
| 37 |
Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry
|
Lennon, C.M.
|
|
2012
|
41 |
10 |
p. 2965-2970
|
artikel
|
| 38 |
Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates
|
Carmody, M.
|
|
2012
|
41 |
10 |
p. 2719-2724
|
artikel
|
| 39 |
Recent Results on Growth of (211)B CdTe on (211)Si with Intermediate Ge and ZnTe Buffer Layers by Metalorganic Vapor-Phase Epitaxy
|
Shintri, Shashidhar
|
|
2012
|
41 |
10 |
p. 2824-2827
|
artikel
|
| 40 |
Reduction of Dislocation Density by Producing Novel Structures
|
Stoltz, A. J.
|
|
2012
|
41 |
10 |
p. 2949-2956
|
artikel
|
| 41 |
Response of the Internal Electric Field in CdZnTe to Illumination at Multiple Optical Powers
|
Washington, Aaron L.
|
|
2012
|
41 |
10 |
p. 2874-2879
|
artikel
|
| 42 |
Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask
|
Fahey, S.
|
|
2012
|
41 |
10 |
p. 2899-2907
|
artikel
|
| 43 |
Short-Wave Infrared HgCdTe Avalanche Photodiodes
|
Rothman, Johan
|
|
2012
|
41 |
10 |
p. 2928-2936
|
artikel
|
| 44 |
Slow-Polishing Iodine-Based Etchant for CdTe and CdZnTe Single Crystals
|
Moravec, P.
|
|
2012
|
41 |
10 |
p. 2838-2845
|
artikel
|
| 45 |
Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam Milling
|
Reddy, M.
|
|
2012
|
41 |
10 |
p. 2957-2964
|
artikel
|
| 46 |
Ultralow-Dark-Current CdHgTe FPAs in the SWIR Rangeat CEA and Sofradir
|
Gravrand, O.
|
|
2012
|
41 |
10 |
p. 2686-2693
|
artikel
|
| 47 |
Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing
|
Jaime-Vasquez, M.
|
|
2012
|
41 |
10 |
p. 2975-2980
|
artikel
|
| 48 |
X-ray Diffraction Investigation of Thermoelastic Properties of HgCdTe/CdZnTe Structures
|
Gergaud, P.
|
|
2012
|
41 |
10 |
p. 2694-2699
|
artikel
|
| 49 |
X-Ray Photoelectron Spectroscopy Study of Oxide Removal Using Atomic Hydrogen for Large-Area II–VI Material Growth
|
Lee, Kyoung-Keun
|
|
2012
|
41 |
10 |
p. 2799-2809
|
artikel
|
| 50 |
ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs)
|
Karmakar, Supriya
|
|
2012
|
41 |
10 |
p. 2663-2670
|
artikel
|
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