| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail
|
Chang, Yong
|
|
2007
|
36 |
8 |
p. 1000-1006
|
artikel
|
| 2 |
Accurate Determination of the Matrix Composition Profile of Hg1–xCdxTe by Secondary Ion Mass Spectrometry
|
Wang, Larry
|
|
2007
|
36 |
8 |
p. 910-912
|
artikel
|
| 3 |
Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R0A Comparable to HgCdTe
|
Canedy, C.L.
|
|
2007
|
36 |
8 |
p. 852-856
|
artikel
|
| 4 |
Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg1−XCdXTe Focal Plane Array by Time of Flight–Secondary Ion Mass Spectroscopy: Novel Analytical Methods
|
Garwood, G.
|
|
2007
|
36 |
8 |
p. 937-948
|
artikel
|
| 5 |
Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy
|
Johnstone, D.
|
|
2007
|
36 |
8 |
p. 832-836
|
artikel
|
| 6 |
Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid
|
Ivanits’ka, V. G.
|
|
2007
|
36 |
8 |
p. 1021-1024
|
artikel
|
| 7 |
Comparative Study of HgCdTe Etchants: An Electrical Characterization
|
Mallick, Shubhrangshu
|
|
2007
|
36 |
8 |
p. 993-999
|
artikel
|
| 8 |
Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
|
Stoltz, A.J.
|
|
2007
|
36 |
8 |
p. 1007-1012
|
artikel
|
| 9 |
Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors
|
Mandal, Krishna C.
|
|
2007
|
36 |
8 |
p. 1013-1020
|
artikel
|
| 10 |
Design and Assessment of Metal-Organic Vapor Phase Epitaxy—Grown Dual Waveband Infrared Detectors
|
Gordon, N.T.
|
|
2007
|
36 |
8 |
p. 931-936
|
artikel
|
| 11 |
Development of Molecular Beam Epitaxially Grown Hg1−xCdxTe for High-Density Vertically-Integrated Photodiode-Based Focal Plane Arrays
|
Aqariden, F.
|
|
2007
|
36 |
8 |
p. 900-904
|
artikel
|
| 12 |
Diffusion of Selenium in Liquid-Phase Epitaxy–Grown Hg0.78Cd0.22Te
|
Zhao, W.
|
|
2007
|
36 |
8 |
p. 822-825
|
artikel
|
| 13 |
Effect of Dislocations on VLWIR HgCdTe Photodiodes
|
Parodos, T.
|
|
2007
|
36 |
8 |
p. 1068-1076
|
artikel
|
| 14 |
Effect of High-Density Plasma Process Parameters on Carrier Transport Properties in p-to-n Type Converted Hg0.7Cd0.3Te Layer
|
Park, B.A.
|
|
2007
|
36 |
8 |
p. 913-918
|
artikel
|
| 15 |
Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe
|
Emelie, P.Y.
|
|
2007
|
36 |
8 |
p. 841-845
|
artikel
|
| 16 |
Electron and Hole Transport in Bulk ZnO: A Full Band Monte Carlo Study
|
Bertazzi, Francesco
|
|
2007
|
36 |
8 |
p. 857-863
|
artikel
|
| 17 |
Elimination of Inclusions in (CdZn)Te Substrates by Post-grown Annealing
|
Belas, E.
|
|
2007
|
36 |
8 |
p. 1025-1030
|
artikel
|
| 18 |
Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches
|
Yasuda, K.
|
|
2007
|
36 |
8 |
p. 837-840
|
artikel
|
| 19 |
Extended X-Ray Absorption Fine Structure Study of Arsenic in HgCdTe
|
Plissard, S.
|
|
2007
|
36 |
8 |
p. 919-924
|
artikel
|
| 20 |
Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors
|
Smith, E. P. G.
|
|
2007
|
36 |
8 |
p. 1045-1051
|
artikel
|
| 21 |
Fast and Reversible Wettability Transitions on ZnO Nanostructures
|
Zhang, Z.
|
|
2007
|
36 |
8 |
p. 895-899
|
artikel
|
| 22 |
Fast Detection of Precipitates and Oxides on CdZnTe Surfaces by Spectroscopic Ellipsometry
|
Badano, G.
|
|
2007
|
36 |
8 |
p. 1077-1084
|
artikel
|
| 23 |
Foreword
|
Sivananthan, S.
|
|
2007
|
36 |
8 |
p. 821
|
artikel
|
| 24 |
From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n+n−/p Ion Implantation Technology
|
Gravrand, O.
|
|
2007
|
36 |
8 |
p. 981-987
|
artikel
|
| 25 |
Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes
|
Perrais, Gwladys
|
|
2007
|
36 |
8 |
p. 963-970
|
artikel
|
| 26 |
HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays
|
Reine, M.B.
|
|
2007
|
36 |
8 |
p. 1059-1067
|
artikel
|
| 27 |
High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays
|
Bornfreund, Richard
|
|
2007
|
36 |
8 |
p. 1085-1091
|
artikel
|
| 28 |
Improved Defect and Fourier Transform Infrared Spectroscopy Analysis for Prediction of Yield for HgCdTe Multilayer Heterostructures
|
Lofgreen, D.D.
|
|
2007
|
36 |
8 |
p. 958-962
|
artikel
|
| 29 |
Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique
|
Hails, Janet E.
|
|
2007
|
36 |
8 |
p. 864-870
|
artikel
|
| 30 |
Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride
|
Liu, Juncheng
|
|
2007
|
36 |
8 |
p. 971-980
|
artikel
|
| 31 |
Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes
|
Westerhout, R.J.
|
|
2007
|
36 |
8 |
p. 884-889
|
artikel
|
| 32 |
Magneto-Transport Characterization of p-Type HgCdTe
|
Tsen, G.K.O.
|
|
2007
|
36 |
8 |
p. 826-831
|
artikel
|
| 33 |
MCT-on-Silicon Negative Luminescence Devices with High Efficiency
|
Lindle, J.R.
|
|
2007
|
36 |
8 |
p. 988-992
|
artikel
|
| 34 |
Metal-Organic Chemical Vapor Deposition of Hg1−xCdxTe Fully Doped Heterostructures Without Postgrowth Anneal for Uncooled MWIR and LWIR Detectors
|
Piotrowski, Adam
|
|
2007
|
36 |
8 |
p. 1052-1058
|
artikel
|
| 35 |
Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study
|
Duan, He
|
|
2007
|
36 |
8 |
p. 890-894
|
artikel
|
| 36 |
Modeling and Design Considerations of HgCdTe Infrared Photodiodes under Nonequilibrium Operation
|
Emelie, P.Y.
|
|
2007
|
36 |
8 |
p. 846-851
|
artikel
|
| 37 |
Nucleation of ZnTe on the As-Terminated Si(112) Surface
|
Jaime-Vasquez, M.
|
|
2007
|
36 |
8 |
p. 905-909
|
artikel
|
| 38 |
Optical and Structural Properties of CdTe Grown by Molecular Beam Epitaxy at Low Temperature for Resonant-Cavity-Enhanced HgCdTe Detectors
|
Wehner, J.G.A.
|
|
2007
|
36 |
8 |
p. 877-883
|
artikel
|
| 39 |
Role of Dislocation Scattering on the Electron Mobility of n-Type Long Wave Length Infrared HgCdTe on Silicon
|
Carmody, M.
|
|
2007
|
36 |
8 |
p. 1098-1105
|
artikel
|
| 40 |
Screening Effects in High Resistivity CdTe for X-ray and Gamma Ray Detectors
|
Kubát, J.
|
|
2007
|
36 |
8 |
p. 871-876
|
artikel
|
| 41 |
Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe
|
Price, Steve
|
|
2007
|
36 |
8 |
p. 1106-1109
|
artikel
|
| 42 |
Selective Growth of CdTe on Si(211): First-Principle Calculations
|
Huang, Y.
|
|
2007
|
36 |
8 |
p. 925-930
|
artikel
|
| 43 |
Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI
|
Destefanis, G.
|
|
2007
|
36 |
8 |
p. 1031-1044
|
artikel
|
| 44 |
Surface Structure of Molecular Beam Epitaxy (211)B HgCdTe
|
Benson, J.D.
|
|
2007
|
36 |
8 |
p. 949-957
|
artikel
|
| 45 |
Synchrotron X-ray Based Characterization of CdZnTe Crystals
|
Duff, Martine C.
|
|
2007
|
36 |
8 |
p. 1092-1097
|
artikel
|
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