| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001)
|
Zhang, X. G.
|
|
|
30 |
6 |
p. 667-672
|
artikel
|
| 2 |
A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays
|
Tennant, W. E.
|
|
|
30 |
6 |
p. 590-594
|
artikel
|
| 3 |
Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes
|
Bahir, G.
|
|
|
30 |
6 |
p. 704-710
|
artikel
|
| 4 |
Characterization of cross-hatch morphology of MBE (211) HgCdTe
|
Martinka, M.
|
|
|
30 |
6 |
p. 632-636
|
artikel
|
| 5 |
Composition control of long wavelength MBE HgCdTe using In-situ spectroscopic ellipsometry
|
Edwall, Dennis
|
|
|
30 |
6 |
p. 643-646
|
artikel
|
| 6 |
Diffusion length measurements in p-HgCdTe using laser beam induced current
|
Redfern, D. A.
|
|
|
30 |
6 |
p. 696-703
|
artikel
|
| 7 |
Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot
|
Garber, V.
|
|
|
30 |
6 |
p. 690-695
|
artikel
|
| 8 |
Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates
|
Varesi, J. B.
|
|
|
30 |
6 |
p. 566-573
|
artikel
|
| 9 |
Galvanomagnetic properties of CdTe below and above the melting point
|
Franc, J.
|
|
|
30 |
6 |
p. 595-602
|
artikel
|
| 10 |
Growth of long wavelength infrared MCT emitters on conductive substrates
|
Maxey, C. D.
|
|
|
30 |
6 |
p. 723-727
|
artikel
|
| 11 |
HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation
|
Velicu, S.
|
|
|
30 |
6 |
p. 711-716
|
artikel
|
| 12 |
Improved morphology and crystalline quality of MBE CdZnTe/Si
|
Almeida, L. A.
|
|
|
30 |
6 |
p. 608-610
|
artikel
|
| 13 |
Improvement of the accuracy of the In-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures
|
Daraselia, M.
|
|
|
30 |
6 |
p. 637-642
|
artikel
|
| 14 |
Infrared absorption behavior in CdZnTe substrates
|
Sen, S.
|
|
|
30 |
6 |
p. 611-618
|
artikel
|
| 15 |
MBE-Grown ZnMgS ultra-violet photodetectors
|
Sou, I. K.
|
|
|
30 |
6 |
p. 673-676
|
artikel
|
| 16 |
MBE growth and device processing of MWIR HgCdTe on large area Si substrates
|
Brill, G.
|
|
|
30 |
6 |
p. 717-722
|
artikel
|
| 17 |
MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations
|
Piquette, E. C.
|
|
|
30 |
6 |
p. 627-631
|
artikel
|
| 18 |
MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays
|
Maranowski, K. D.
|
|
|
30 |
6 |
p. 619-622
|
artikel
|
| 19 |
MCT technology challenges for mass production
|
Tribolet, Philippe
|
|
|
30 |
6 |
p. 574-584
|
artikel
|
| 20 |
Optical properties of molecular beam epitaxy-grown ZnSexTe1−x II–VI semiconductor alloys
|
Peiris, F. C.
|
|
|
30 |
6 |
p. 677-681
|
artikel
|
| 21 |
Photoluminescence measurements on undoped CdZnTe grown by the high-pressure bridgman method
|
Suzuki, K.
|
|
|
30 |
6 |
p. 603-607
|
artikel
|
| 22 |
Summary of HgCdTe 2D array technology in the U.K.
|
Baker, I. M.
|
|
|
30 |
6 |
p. 682-689
|
artikel
|
| 23 |
Zn(MgBe)Se ultraviolet photodetectors
|
Vigué, F.
|
|
|
30 |
6 |
p. 662-666
|
artikel
|
| 24 |
ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application
|
Hong, S. K.
|
|
|
30 |
6 |
p. 647-658
|
artikel
|
| 25 |
ZnO growth toward optical devices by MOVPE using N2O
|
Ogata, K.
|
|
|
30 |
6 |
p. 659-661
|
artikel
|
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