nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture
|
Lee, W. H. |
|
|
30 |
2 |
p. 84-88 |
artikel |
2 |
Deposition characteristics of Ti−Si−N films reactively sputtered from various targets in a N2/Ar gas mixture
|
Lee, W. H. |
|
2001 |
30 |
2 |
p. 84-88 |
artikel |
3 |
Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD
|
Kim, Dong-Joon |
|
2001 |
30 |
2 |
p. 99-102 |
artikel |
4 |
Effects of DC power on the properties of DLC coatings on the OPC drum
|
Hwang, Min-Sun |
|
|
30 |
2 |
p. 78-83 |
artikel |
5 |
Effects of DC power on the properties of DLC coatings on the OPC drum
|
Hwang, Min-Sun |
|
2001 |
30 |
2 |
p. 78-83 |
artikel |
6 |
Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
|
Jang, Ja-Soon |
|
|
30 |
2 |
p. 94-98 |
artikel |
7 |
Electrical characteristics of thermally stable Ru and Ru/Au ohmic contacts to surface-treated p-type GaN
|
Jang, Ja-Soon |
|
2001 |
30 |
2 |
p. 94-98 |
artikel |
8 |
Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials
|
Emerson, N. G. |
|
|
30 |
2 |
p. L5-L7 |
artikel |
9 |
Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials
|
Emerson, N. G. |
|
2001 |
30 |
2 |
p. L5-L7 |
artikel |
10 |
Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
|
Kim, Jong Kyu |
|
2001 |
30 |
2 |
p. L8-L12 |
artikel |
11 |
Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
|
Kim, Jong Kyu |
|
|
30 |
2 |
p. L8-L12 |
artikel |
12 |
Pyroelectric characteristics of thin PbTiO3 and la-modified PbTiO3 films on platinum films for infrared sensors
|
Deb, K. K. |
|
2001 |
30 |
2 |
p. 89-93 |
artikel |
13 |
Study of interface traps from transient photoconductive decay measurements in passivated HgCdTe
|
Pal, R. |
|
2001 |
30 |
2 |
p. 103-108 |
artikel |
14 |
Study of interface traps from transient photoconductive decay measurements in passivated HgCdTe
|
Pal, R. |
|
|
30 |
2 |
p. 103-108 |
artikel |
15 |
TCAD simulation of ion implantation test for controlling quality of GaAs substrates used for fabricating implanted devices
|
Deepak, |
|
|
30 |
2 |
p. 70-77 |
artikel |
16 |
TCAD simulation of ion implantation test for controlling quality of GaAs substrates used for fabricating implanted devices
|
Deepak, |
|
2001 |
30 |
2 |
p. 70-77 |
artikel |
17 |
Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors
|
Tsai, Chang-Da |
|
|
30 |
2 |
p. 59-64 |
artikel |
18 |
Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors
|
Tsai, Chang-Da |
|
2001 |
30 |
2 |
p. 59-64 |
artikel |
19 |
Thermodynamically self-consistent approximations to the liquidus and solidus of Hg1−xCdxTe
|
Lee, Hanjie |
|
|
30 |
2 |
p. 65-69 |
artikel |
20 |
Thermodynamically self-consistent approximations to the liquidus and solidus of Hg1−xCdxTe
|
Lee, Hanjie |
|
2001 |
30 |
2 |
p. 65-69 |
artikel |