| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Comparison of GaAs grown on standard Si (511) and compliant SOI (511)
|
Seaford, M. L.
|
|
2000
|
29 |
7 |
p. 906-908
|
artikel
|
| 2 |
Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates
|
Tomich, D. H.
|
|
2000
|
29 |
7 |
p. 940-943
|
artikel
|
| 3 |
Complex permeability studies of Li1+ substituted Cu-Zn ferrites
|
Suryavanshi, S. S.
|
|
2000
|
29 |
7 |
p. 979-983
|
artikel
|
| 4 |
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
|
Hobart, K. D.
|
|
2000
|
29 |
7 |
p. 897-900
|
artikel
|
| 5 |
Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III–V compound semiconductors from melts
|
Dutta, P. S.
|
|
2000
|
29 |
7 |
p. 956-963
|
artikel
|
| 6 |
Er-doped polycrystalline silicon for light emission at λ=1.54 µm
|
Chen, Thomas D.
|
|
2000
|
29 |
7 |
p. 973-978
|
artikel
|
| 7 |
Foreword
|
Seaford, Matthew L.
|
|
2000
|
29 |
7 |
p. 893
|
artikel
|
| 8 |
Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport
|
Ha, Seoyong
|
|
2000
|
29 |
7 |
p. L5-L8
|
artikel
|
| 9 |
Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates
|
Vanhollebeke, K.
|
|
2000
|
29 |
7 |
p. 933-939
|
artikel
|
| 10 |
Low-dislocation relaxed SiGe grown on an effective compliant substrate
|
Luo, Y. H.
|
|
2000
|
29 |
7 |
p. 950-955
|
artikel
|
| 11 |
Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part II: The influence of uncertainties in the parameters of window and antireflection coatings
|
Rey-Stolle, Ignacio
|
|
2000
|
29 |
7 |
p. 992-999
|
artikel
|
| 12 |
Optimum antireflection coatings for heteroface AlGaAs/GaAs solar cells—Part I: The influence of window layer oxidation
|
Rey-Stolle, Ignacio
|
|
2000
|
29 |
7 |
p. 984-991
|
artikel
|
| 13 |
Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties
|
Ressel, P.
|
|
2000
|
29 |
7 |
p. 964-972
|
artikel
|
| 14 |
Relaxation enhancing interlayers (REIs) in threading dislocation reduction
|
Romanov, A. E.
|
|
2000
|
29 |
7 |
p. 901-905
|
artikel
|
| 15 |
Room temperature wafer bonding of silicon, oxidized silicon, and crystalline quartz
|
Bengtsson, Stefan
|
|
2000
|
29 |
7 |
p. 909-915
|
artikel
|
| 16 |
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
|
Mooney, P. M.
|
|
2000
|
29 |
7 |
p. 921-927
|
artikel
|
| 17 |
Strain relaxation in InGaAs lattice engineered substrates
|
Chavarkar, P.
|
|
2000
|
29 |
7 |
p. 944-949
|
artikel
|
| 18 |
The growth of GaN on lithium gallate (LiGaO2) substrates for material integration
|
Brown, April S.
|
|
2000
|
29 |
7 |
p. 894-896
|
artikel
|
| 19 |
Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding
|
Zheng, Y.
|
|
2000
|
29 |
7 |
p. 916-920
|
artikel
|
| 20 |
Transfer of semiconductor and oxide films by wafer bonding and layer cutting
|
Tong, Qin-Yi
|
|
2000
|
29 |
7 |
p. 928-933
|
artikel
|
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