nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays
|
Nötzel, Richard |
|
1998 |
27 |
1 |
p. 38-42 |
artikel |
2 |
Colossal magnetoresistance in Sol-Gel derived epitaxial thin film of Co-doped La1−xCaxMnOx
|
Bae, Seung-Young |
|
1998 |
27 |
1 |
p. 1-8 |
artikel |
3 |
Condensed phase equilibria in the metal-In-P systems
|
Mohney, S. E. |
|
1998 |
27 |
1 |
p. 26-31 |
artikel |
4 |
Diamond-like carbon protective films for organic photoconductors
|
Chan, Y. C. |
|
1998 |
27 |
1 |
p. 42-44 |
artikel |
5 |
Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors
|
Yow, H. K. |
|
1998 |
27 |
1 |
p. 18-24 |
artikel |
6 |
Fabrication of undoped semi-insulating InP by multiple-step wafer annealing
|
Uchida, M. |
|
1998 |
27 |
1 |
p. 10-13 |
artikel |
7 |
Growth of oriented diamond film on single crystalline 6H-SiC substrates
|
Li, Xi |
|
1998 |
27 |
1 |
p. 32-37 |
artikel |
8 |
Refractory metal boride ohmic contacts to P-type 6H-SiC
|
Oder, T. N. |
|
1998 |
27 |
1 |
p. 14-18 |
artikel |
9 |
Sidewall spacer defined resonant interband tunneling diodes
|
Shiralagi, K. |
|
1998 |
27 |
1 |
p. L1-L5 |
artikel |
10 |
The Al/Ni interfacial reactions under the influence of electric current
|
Liu, Wen-Chyuarn |
|
1998 |
27 |
1 |
p. L6-L9 |
artikel |
11 |
The influence of rf induced bias on the properties of diamond-like carbon films prepared using ECR-CVD
|
Yoon, S. F. |
|
1998 |
27 |
1 |
p. 46-52 |
artikel |