| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytic subject index
|
|
|
1985
|
134 |
1-3 |
p. 538-540
3 p.
|
artikel
|
| 2 |
A new simple expression for the impact ionisation coefficient and its verification using Monte Carlo simulation
|
Burt, M.G.
|
|
1985
|
134 |
1-3 |
p. 247-249
3 p.
|
artikel
|
| 3 |
A semi-analytical model for time dependent hot electron transport
|
Herbert, D.C.
|
|
1985
|
134 |
1-3 |
p. 82-86
5 p.
|
artikel
|
| 4 |
A study of near-micron InP transferred electron devices
|
Czekaj, J.
|
|
1985
|
134 |
1-3 |
p. 499-501
3 p.
|
artikel
|
| 5 |
Athermal and thermal relaxation of high density electron-hole plasma in GaAs
|
Collet, Jacques
|
|
1985
|
134 |
1-3 |
p. 394-398
5 p.
|
artikel
|
| 6 |
Auger recombination in GaInAsAlInAs multiple quantum well structure
|
Sermage, B.
|
|
1985
|
134 |
1-3 |
p. 417-421
5 p.
|
artikel
|
| 7 |
Ballistic electrons in a submicron structure: The distribution function and two valley effects
|
Baranger, Harold U.
|
|
1985
|
134 |
1-3 |
p. 470-474
5 p.
|
artikel
|
| 8 |
Band structure dependent transient transport in near and submicron length semiconductor devices
|
Grubin, H.L.
|
|
1985
|
134 |
1-3 |
p. 67-71
5 p.
|
artikel
|
| 9 |
Channel carrier heating and MOS depletion layer capacitance
|
Zrenner, A.
|
|
1985
|
134 |
1-3 |
p. 102-105
4 p.
|
artikel
|
| 10 |
Chaos and Hyperchaos in the post-breakdown regime of p-germanium
|
Röhricht, B.
|
|
1985
|
134 |
1-3 |
p. 281-287
7 p.
|
artikel
|
| 11 |
Chaotic behavior of hot electron plasma in Ni-compensated Ge
|
Bumeliene̊, S.B.
|
|
1985
|
134 |
1-3 |
p. 293-298
6 p.
|
artikel
|
| 12 |
Chaotic noise in the firing wave instability of the current filaments in GaAs
|
Aoki, Kazunori
|
|
1985
|
134 |
1-3 |
p. 288-292
5 p.
|
artikel
|
| 13 |
Committees and sponsors
|
|
|
1985
|
134 |
1-3 |
p. x-
1 p.
|
artikel
|
| 14 |
1D analytical treatment of hot-electron effects in short-channel MOSFET's
|
Miura-Mattausch, M.
|
|
1985
|
134 |
1-3 |
p. 77-81
5 p.
|
artikel
|
| 15 |
Degeneracy and screening effects on hot electron relaxation in quantum heterostructures
|
Das Sarma, S.
|
|
1985
|
134 |
1-3 |
p. 301-304
4 p.
|
artikel
|
| 16 |
Donor-acceptor pair recombination in polar semiconductors under hot electron capture
|
Zehe, A.
|
|
1985
|
134 |
1-3 |
p. 374-378
5 p.
|
artikel
|
| 17 |
Dynamical screening of the electron-optical phonon interaction in two dimensions
|
Yang, C.H.
|
|
1985
|
134 |
1-3 |
p. 309-313
5 p.
|
artikel
|
| 18 |
Dynamics of a Bloch electron in a uniform electric field; Bloch oscillations
|
Krieger, Joseph B.
|
|
1985
|
134 |
1-3 |
p. 228-232
5 p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
1985
|
134 |
1-3 |
p. ii-
1 p.
|
artikel
|
| 20 |
Effect of a strong magnetic field on the relaxation of a hot 2-D electron-hole plasma studied with picosecond photoluminescence
|
Hollering, R.W.J.
|
|
1985
|
134 |
1-3 |
p. 422-425
4 p.
|
artikel
|
| 21 |
Effect of interparticle collisions on energy relaxation of carriers in semiconductors
|
Brunetti, Rossella
|
|
1985
|
134 |
1-3 |
p. 369-373
5 p.
|
artikel
|
| 22 |
Electron drift velocity in Ga0.47In0.53As at very high fields
|
Nag, B.R.
|
|
1985
|
134 |
1-3 |
p. 519-522
4 p.
|
artikel
|
| 23 |
Electron-electron and electron-plasmon interaction in polar semiconductors
|
Lugli, Paolo
|
|
1985
|
134 |
1-3 |
p. 364-368
5 p.
|
artikel
|
| 24 |
Electron heating and electron temperature dependent polaron interaction of 2D-electrons in GaAs
|
Seidenbusch, W.
|
|
1985
|
134 |
1-3 |
p. 314-317
4 p.
|
artikel
|
| 25 |
Electron-phonon interaction and current oscillations in GaAs-AlGaAs tunnel junctions
|
Leburton, J.P.
|
|
1985
|
134 |
1-3 |
p. 32-35
4 p.
|
artikel
|
| 26 |
Electron scattering rates associated with the polar optical phonon interaction in a thin ionic slab
|
Riddoch, Frances A.
|
|
1985
|
134 |
1-3 |
p. 342-346
5 p.
|
artikel
|
| 27 |
Electron velocity overshoot observed in an impulse-excited GaAs photoconductor
|
Hammond, R.B.
|
|
1985
|
134 |
1-3 |
p. 475-479
5 p.
|
artikel
|
| 28 |
Femtosecond spectroscopy of nonequilibrium carrier distributions
|
Fork, R.L.
|
|
1985
|
134 |
1-3 |
p. 381-388
8 p.
|
artikel
|
| 29 |
First observations of time-resolved submillimetre photoconduction in indium phosphide
|
Chamberlain, J.M.
|
|
1985
|
134 |
1-3 |
p. 426-430
5 p.
|
artikel
|
| 30 |
Four-terminal quantum hall and Shubnikov-de Haas measurements with pulsed electron fields
|
Woltjer, R.
|
|
1985
|
134 |
1-3 |
p. 352-356
5 p.
|
artikel
|
| 31 |
High frequency application of hot electrons in superlattices
|
Ho, Jennifer
|
|
1985
|
134 |
1-3 |
p. 502-506
5 p.
|
artikel
|
| 32 |
Hot carrier drift velocities in GaAs/AlGaAs multiple quantum well structures
|
Höpfel, R.A.
|
|
1985
|
134 |
1-3 |
p. 509-513
5 p.
|
artikel
|
| 33 |
Hot carrier effects in submicron CMOS
|
Akers, L.A.
|
|
1985
|
134 |
1-3 |
p. 116-120
5 p.
|
artikel
|
| 34 |
Hot carrier energy loss rates in GaAs quantum wells: Large differences between electrons and holes
|
Shah, Jagdeep
|
|
1985
|
134 |
1-3 |
p. 174-178
5 p.
|
artikel
|
| 35 |
Hot carrier recombination in GaAs-GaAlAs quantum wells and superlattices
|
Jaros, M.
|
|
1985
|
134 |
1-3 |
p. 389-393
5 p.
|
artikel
|
| 36 |
Hot electron hall effect in a two-dimensional electron gas
|
van Welzenis, R.G.
|
|
1985
|
134 |
1-3 |
p. 347-351
5 p.
|
artikel
|
| 37 |
Hot electron Landau level lifetime in GaAs/GaAlAs heterostructures
|
Helm, M.
|
|
1985
|
134 |
1-3 |
p. 323-326
4 p.
|
artikel
|
| 38 |
Hot electron magnetophonon spectroscopy of sub-micron semiconductors and heterostructures
|
Barker, J.R.
|
|
1985
|
134 |
1-3 |
p. 17-21
5 p.
|
artikel
|
| 39 |
Hot electron spectroscopy of GaAs
|
Levi, A.F.J.
|
|
1985
|
134 |
1-3 |
p. 480-486
7 p.
|
artikel
|
| 40 |
Hot-electron transport in heterostructure devices
|
Luryi, Serge
|
|
1985
|
134 |
1-3 |
p. 453-465
13 p.
|
artikel
|
| 41 |
Hot electron transport in very short semiconductors
|
Hamaguchi, Chihiro
|
|
1985
|
134 |
1-3 |
p. 87-96
10 p.
|
artikel
|
| 42 |
Hot hole magnetophonon resonance in PInSb in high magnetic fields
|
Yamada, Koji
|
|
1985
|
134 |
1-3 |
p. 179-183
5 p.
|
artikel
|
| 43 |
Hot phonon dynamics
|
Kocevar, Peter
|
|
1985
|
134 |
1-3 |
p. 155-163
9 p.
|
artikel
|
| 44 |
Hot phonon effects in heterolayers
|
J. Price, Peter
|
|
1985
|
134 |
1-3 |
p. 164-168
5 p.
|
artikel
|
| 45 |
Impact excitation of shallow donor impurities by ‘hot’ electrons in n-type GaAs
|
Trager, C.
|
|
1985
|
134 |
1-3 |
p. 250-254
5 p.
|
artikel
|
| 46 |
Impact ionization in InP and GaAs
|
Stillman, G.E.
|
|
1985
|
134 |
1-3 |
p. 241-246
6 p.
|
artikel
|
| 47 |
Induced base transistor
|
Luryi, Serge
|
|
1985
|
134 |
1-3 |
p. 456-469
14 p.
|
artikel
|
| 48 |
Influence of electric fields on the hot carrier kinetics in AlGaAs/GaAs quantum wells
|
Polland, H.-J.
|
|
1985
|
134 |
1-3 |
p. 412-416
5 p.
|
artikel
|
| 49 |
Internal photoemission in GaAs/(AlxGa1−x)As heterostructures
|
Abstreiter, G.
|
|
1985
|
134 |
1-3 |
p. 433-438
6 p.
|
artikel
|
| 50 |
Investigation of ballistic transport through resonant-tunnelling quantum wells using wigner function approach
|
Ravaioli, Umberto
|
|
1985
|
134 |
1-3 |
p. 36-40
5 p.
|
artikel
|
| 51 |
List of contributors
|
|
|
1985
|
134 |
1-3 |
p. 535-537
3 p.
|
artikel
|
| 52 |
Low-frequency oscillations and routes to chaos in semi-insulating GaAs
|
Maracas, G.N.
|
|
1985
|
134 |
1-3 |
p. 276-280
5 p.
|
artikel
|
| 53 |
Magnetotunneling in AlxGa1−xAs capacitors
|
Hickmott, T.W.
|
|
1985
|
134 |
1-3 |
p. 3-11
9 p.
|
artikel
|
| 54 |
Mechanisms for chaos in semiconductors induced by impact ionization
|
Schöll, Eckehard
|
|
1985
|
134 |
1-3 |
p. 271-275
5 p.
|
artikel
|
| 55 |
Method for numerically computing the noise of devices
|
Nougier, J.P.
|
|
1985
|
134 |
1-3 |
p. 260-263
4 p.
|
artikel
|
| 56 |
Mobility and diffusivity of two-dimensional degenerate hot electrons in polar semiconductor quantum wells
|
Chatopadhyay, D.
|
|
1985
|
134 |
1-3 |
p. 523-525
3 p.
|
artikel
|
| 57 |
Monolithic hot electron transistors in GaAs with high current gain
|
Woodwock, J.M.
|
|
1985
|
134 |
1-3 |
p. 111-115
5 p.
|
artikel
|
| 58 |
Monte Carlo analysis of hot-phonon effects on non-polar semiconductor transport properties
|
Bordone, Paolo
|
|
1985
|
134 |
1-3 |
p. 169-173
5 p.
|
artikel
|
| 59 |
Monte Carlo simulation of the streaming velocity and hall angle of electrons in AgCl in crossed electric and magnetic fields at liquid helium temperature
|
Warmenbol, P.
|
|
1985
|
134 |
1-3 |
p. 233-238
6 p.
|
artikel
|
| 60 |
Monte Carlo study of high electric field quantum transport in SiO2
|
Porod, W.
|
|
1985
|
134 |
1-3 |
p. 137-141
5 p.
|
artikel
|
| 61 |
Multi-layered heterojunction structure for millimeter-wave impatt devices
|
Lippens, Didier
|
|
1985
|
134 |
1-3 |
p. 72-76
5 p.
|
artikel
|
| 62 |
Multi-quantum-wells to reveal the band offsets at semiconductor interfaces
|
Pötz, W.
|
|
1985
|
134 |
1-3 |
p. 439-443
5 p.
|
artikel
|
| 63 |
Non-equilibrium current fluctuations in finite size semiconductors
|
Stanton, Christopher J.
|
|
1985
|
134 |
1-3 |
p. 255-259
5 p.
|
artikel
|
| 64 |
Nonuniform hot electron distribution in the barrier layer of GaAs FETs
|
Aoki, Kazunori
|
|
1985
|
134 |
1-3 |
p. 97-101
5 p.
|
artikel
|
| 65 |
On a direct connection of the transition metal impurity levels to the band edge discontinuities in semiconductor heterojunctions
|
Langer, Jerzy M.
|
|
1985
|
134 |
1-3 |
p. 444-450
7 p.
|
artikel
|
| 66 |
One dimensional polaron effects and current inhomogeneities in sequential phonon emission
|
Hellman, E.S.
|
|
1985
|
134 |
1-3 |
p. 41-46
6 p.
|
artikel
|
| 67 |
Opening address
|
Gornik, E.
|
|
1985
|
134 |
1-3 |
p. xvii-
1 p.
|
artikel
|
| 68 |
Oscillatory structure in the reverse bias J(V) plots of n+GaAs/(AlGa)As/n−GaAs/n+GaAs structures
|
Taylor, D.C.
|
|
1985
|
134 |
1-3 |
p. 12-16
5 p.
|
artikel
|
| 69 |
Photoexcited carrier transport in GaAs/AlGaAs superlattices: A time of flight technique
|
Minot, Christophe
|
|
1985
|
134 |
1-3 |
p. 514-518
5 p.
|
artikel
|
| 70 |
Physics and modelling of hot electron effects in submicron devices
|
Castagné, R.
|
|
1985
|
134 |
1-3 |
p. 55-66
12 p.
|
artikel
|
| 71 |
Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation
|
Kash, Kathleen
|
|
1985
|
134 |
1-3 |
p. 189-198
10 p.
|
artikel
|
| 72 |
Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
|
Ryan, J.F.
|
|
1985
|
134 |
1-3 |
p. 318-322
5 p.
|
artikel
|
| 73 |
Preface
|
|
|
1985
|
134 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 74 |
Quantum effects at high and low fields in the channel of a field effect transistor
|
Holden, A.J.
|
|
1985
|
134 |
1-3 |
p. 132-136
5 p.
|
artikel
|
| 75 |
Quantum photoconductive gain by effective mass filtering and negative conductance in superlattice pn junctions
|
Capasso, Federico
|
|
1985
|
134 |
1-3 |
p. 487-493
7 p.
|
artikel
|
| 76 |
Quantum theory of hot electron tunnelling in microstructures
|
Barker, John R.
|
|
1985
|
134 |
1-3 |
p. 22-31
10 p.
|
artikel
|
| 77 |
Raman spectroscopy of hot electron relaxation in GaAs
|
Tsang, J.C.
|
|
1985
|
134 |
1-3 |
p. 184-188
5 p.
|
artikel
|
| 78 |
Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structure
|
Rosencher, E.
|
|
1985
|
134 |
1-3 |
p. 106-110
5 p.
|
artikel
|
| 79 |
Recent results on hot-electron quantum transport
|
Reggiani, Lino
|
|
1985
|
134 |
1-3 |
p. 123-131
9 p.
|
artikel
|
| 80 |
Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces
|
Bimberg, Dieter
|
|
1985
|
134 |
1-3 |
p. 399-402
4 p.
|
artikel
|
| 81 |
Resonant magnetoresistance measurements in short (∼ 1 μm) n+nn+ GaAs structures: Investigation of the electric field dependence of quasi-elastic inter-Landau level scattering processes
|
Guimaraes, P.S.S.
|
|
1985
|
134 |
1-3 |
p. 47-52
6 p.
|
artikel
|
| 82 |
Scattering and real space transfer in multi-quantum well structures
|
Sawaki, Nobuhiko
|
|
1985
|
134 |
1-3 |
p. 494-498
5 p.
|
artikel
|
| 83 |
Scattering-induced ndr in AlGaAs/GaAs quantum wells
|
Al-Mudares, Mustafa
|
|
1985
|
134 |
1-3 |
p. 526-530
5 p.
|
artikel
|
| 84 |
Some characteristics of velocity overshoot in GaAs under uniform-field conditions
|
Vassell, M.O.
|
|
1985
|
134 |
1-3 |
p. 531-534
4 p.
|
artikel
|
| 85 |
Specific heat of hot electrons in the gas and in the condensed state
|
Nimtz, Günter
|
|
1985
|
134 |
1-3 |
p. 359-363
5 p.
|
artikel
|
| 86 |
Standing charge density waves driven by electron drift in patterned (Al, Ga)As/GaAs heterostructures
|
Allen Jr., S.J.
|
|
1985
|
134 |
1-3 |
p. 332-336
5 p.
|
artikel
|
| 87 |
Stimulated emission by hot carriers in p-type Ge
|
Brazis, R.
|
|
1985
|
134 |
1-3 |
p. 201-209
9 p.
|
artikel
|
| 88 |
Study of the energy relaxation time of hot electrons in GaAs/GaAlAs heterostructures
|
Vass, Erich
|
|
1985
|
134 |
1-3 |
p. 337-341
5 p.
|
artikel
|
| 89 |
The Monte Carlo trajectory integral method
|
Socha, J.B.
|
|
1985
|
134 |
1-3 |
p. 142-147
6 p.
|
artikel
|
| 90 |
Thermalization of hot electrons in quantum wells
|
Yang, C.H.
|
|
1985
|
134 |
1-3 |
p. 305-308
4 p.
|
artikel
|
| 91 |
Time-resolved photoluminescence for quantum well semiconductor heterostructures
|
Ryan, J.F.
|
|
1985
|
134 |
1-3 |
p. 403-411
9 p.
|
artikel
|
| 92 |
Transient response studied within the integral formulation of high-field quantum transport
|
Jauho, A.P.
|
|
1985
|
134 |
1-3 |
p. 148-152
5 p.
|
artikel
|
| 93 |
Transport parameters of hot electrons in GaAs at 300 K
|
Gasquet, D.
|
|
1985
|
134 |
1-3 |
p. 264-268
5 p.
|
artikel
|
| 94 |
Transverse negative differential mobility due to the negative mass of ballistically moving heavy holes
|
Pozhela, Yu.K.
|
|
1985
|
134 |
1-3 |
p. 223-227
5 p.
|
artikel
|
| 95 |
Tunable hot hole FIR lasers and CR masers
|
Andronov, A.A.
|
|
1985
|
134 |
1-3 |
p. 210-222
13 p.
|
artikel
|
| 96 |
Two-dimensional electron transport and hot electron effects in InP/n-AlInAs heterostructures
|
Inoue, Masataka
|
|
1985
|
134 |
1-3 |
p. 327-331
5 p.
|
artikel
|
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