| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A composite insulator structure for VLSI multilevel metallization
|
Gati, George S.
|
|
1985
|
|
P2 |
p. 997-1003
7 p.
|
artikel
|
| 2 |
A DLTS technique for surface state capture cross-section measurement of MOS diodes
|
Sengupta, Dipankar
|
|
1985
|
|
P2 |
p. 1004-1010
7 p.
|
artikel
|
| 3 |
Advances in characterizing and controlling metal-semiconductor interfaces
|
Brillson, L.J.
|
|
1985
|
|
P2 |
p. 948-968
21 p.
|
artikel
|
| 4 |
Amorphous silicon solar cells produced by a DC magnetron glow discharge technique
|
McKenzie, D.R.
|
|
1985
|
|
P2 |
p. 891-898
8 p.
|
artikel
|
| 5 |
Are thin film physical structures fractals?
|
Yehoda, Joseph E.
|
|
1985
|
|
P2 |
p. 590-595
6 p.
|
artikel
|
| 6 |
A rigorous diffraction theory for the optical properties of black chrome
|
Smith, G.B.
|
|
1985
|
|
P2 |
p. 813-819
7 p.
|
artikel
|
| 7 |
Author index
|
|
|
1985
|
|
P2 |
p. 1106-1115
10 p.
|
artikel
|
| 8 |
Characteristic defects generated at the Si/SiO2 interface during avalanche injection of holes
|
Vengurlekar, A.S.
|
|
1985
|
|
P2 |
p. 974-982
9 p.
|
artikel
|
| 9 |
Characteristics of moisture-sensitive Ta2O5/TiO2 ceramic films
|
Yamamoto, Tatsuo
|
|
1985
|
|
P2 |
p. 827-838
12 p.
|
artikel
|
| 10 |
Characterization of mercury cadmium telluride surface and interface using surface acoustic wave technique
|
Das, P.
|
|
1985
|
|
P2 |
p. 737-755
19 p.
|
artikel
|
| 11 |
Chemically deposited alloy semiconductor thin films
|
Skyllas-Kazacos, M.
|
|
1985
|
|
P2 |
p. 1091-1097
7 p.
|
artikel
|
| 12 |
Cluster size and spatial distributions in gold deposits on NaCl surfaces
|
Robins, J.L.
|
|
1985
|
|
P2 |
p. 565-573
9 p.
|
artikel
|
| 13 |
Comparison of properties of thin films of CuInSe2 and its alloys produced by evaporation, RF-sputtering and chemical spray pyrolysis
|
Loferski, J.J.
|
|
1985
|
|
P2 |
p. 645-655
11 p.
|
artikel
|
| 14 |
Compositional analysis of thin film amorphous semiconductors and insulators using LIMA
|
Smith, G.J.
|
|
1985
|
|
P2 |
p. 930-936
7 p.
|
artikel
|
| 15 |
Derivation of charge transfer parameters at semiconductor-liquid interfaces
|
Hinckley, S.
|
|
1985
|
|
P2 |
p. 1075-1082
8 p.
|
artikel
|
| 16 |
Determination of the morphology and effective optical constants of non-ideal thin films
|
Neely, D.F.
|
|
1985
|
|
P2 |
p. 804-812
9 p.
|
artikel
|
| 17 |
Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system
|
Nassibian, A.G.
|
|
1985
|
|
P2 |
p. 1011-1018
8 p.
|
artikel
|
| 18 |
Effect of different methods of oxidation on SiSiO2 interface state properties
|
Majhi, J.
|
|
1985
|
|
P2 |
p. 983-991
9 p.
|
artikel
|
| 19 |
Effect of hydrogen pressure on the deposition of amorphous silicon films by tetrode RF sputtering
|
Gekka, Yasuo
|
|
1985
|
|
P2 |
p. 899-907
9 p.
|
artikel
|
| 20 |
Effect of laser annealing on the structural, electrical and optical properties of CdTe thin films
|
Dawar, A.L.
|
|
1985
|
|
P2 |
p. 846-858
13 p.
|
artikel
|
| 21 |
Electron beam induced effects at silicon-transition metal silicide interfaces
|
Pandelisev, K.A.
|
|
1985
|
|
P2 |
p. 969-973
5 p.
|
artikel
|
| 22 |
Electronic properties and chemical interactions at III–V compound semiconductor surfaces: Germanium and oxygen on GaAs(110) and InP(110) cleaved surfaces
|
Mönch, Winfried
|
|
1985
|
|
P2 |
p. 705-723
19 p.
|
artikel
|
| 23 |
Epitaxial growth mechanism of chlorinated copper phthalocyanine on KCl surfaces
|
Saito, Yoshio
|
|
1985
|
|
P2 |
p. 574-581
8 p.
|
artikel
|
| 24 |
Epitaxial growth of C40 structure silicides on (111)Si
|
Cheng, H.C.
|
|
1985
|
|
P2 |
p. 512-519
8 p.
|
artikel
|
| 25 |
Epitaxy at {111}fcc/{110}bcc metal interfaces
|
Van Der Merwe, Jan H.
|
|
1985
|
|
P2 |
p. 545-555
11 p.
|
artikel
|
| 26 |
Fe/MgO(001) model catalysts: Electron microscopic and spectroscopic studies
|
Hubert, R.A.
|
|
1985
|
|
P2 |
p. 631-637
7 p.
|
artikel
|
| 27 |
Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films
|
Dawar, A.L.
|
|
1985
|
|
P2 |
p. 781-791
11 p.
|
artikel
|
| 28 |
Functional dependence of electron mobility on the distance of remote donor impurities from the interface in AlGaAs/GaAs heterostructures
|
Szymański, J.
|
|
1985
|
|
P2 |
p. 992-996
5 p.
|
artikel
|
| 29 |
Further investigations on the photoelectric and dielectric properties of HgTe-CdTe solid solution thin films for solar cells
|
Tawfik, A.
|
|
1985
|
|
P2 |
p. 772-780
9 p.
|
artikel
|
| 30 |
Further studies on the semiconductivity and pyroelectricity of poled and Cd-doped mercury telluride thin films for electronics and engineering
|
Tawfik, A.
|
|
1985
|
|
P2 |
p. 763-771
9 p.
|
artikel
|
| 31 |
Hall mobility and field effect mobility studies on PbTe HWE thin films
|
Vaya, P.R.
|
|
1985
|
|
P2 |
p. 731-736
6 p.
|
artikel
|
| 32 |
High-rate hollow-cathode amorphous silicon deposition
|
Horwitz, Chris M.
|
|
1985
|
|
P2 |
p. 925-929
5 p.
|
artikel
|
| 33 |
High resolution electron microscopic studies of the oxidation process of ZnTe films
|
Kaito, Chihiro
|
|
1985
|
|
P2 |
p. 604-612
9 p.
|
artikel
|
| 34 |
Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation
|
Gazecki, J.
|
|
1985
|
|
P2 |
p. 1034-1041
8 p.
|
artikel
|
| 35 |
Impurity-induced surface acoustic wave attenuation in doped amorphous GeH thin films
|
Bhatia, K.L.
|
|
1985
|
|
P2 |
p. 756-762
7 p.
|
artikel
|
| 36 |
Interfacial deep levels responsible for schottky barrier formation at semiconductor/metal contacts
|
Dow, John D.
|
|
1985
|
|
P2 |
p. 937-947
11 p.
|
artikel
|
| 37 |
Long-range force and interfacial energy between dissimilar metals
|
March, N.H.
|
|
1985
|
|
P2 |
p. 1042-1048
7 p.
|
artikel
|
| 38 |
Low-loss waveguiding in ion-assisted-deposited thin films
|
Binh, L.N.
|
|
1985
|
|
P2 |
p. 656-662
7 p.
|
artikel
|
| 39 |
Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques
|
Greene, J.E.
|
|
1985
|
|
P2 |
p. 520-544
25 p.
|
artikel
|
| 40 |
Morphology and structure of indium nitride films
|
Foley, C.P.
|
|
1985
|
|
P2 |
p. 663-669
7 p.
|
artikel
|
| 41 |
Native defects at the Si/SiO2 interface-amorphous silicon revisited
|
Biegelsen, D.K.
|
|
1985
|
|
P2 |
p. 879-890
12 p.
|
artikel
|
| 42 |
Optical scattering at conductive transparent oxide surfaces
|
Schade, H.
|
|
1985
|
|
P2 |
p. 839-845
7 p.
|
artikel
|
| 43 |
Ordering in second stage alkali-metal-graphite intercalation compounds
|
Naylor, G.R.S.
|
|
1985
|
|
P2 |
p. 686-695
10 p.
|
artikel
|
| 44 |
Profiling of hydrogen in a-Si:H by the H(19 F,αγ)16 O ∗ reaction
|
Sie, S.H.
|
|
1985
|
|
P2 |
p. 908-915
8 p.
|
artikel
|
| 45 |
Properties of CdTe films formed by compound vacuum evaporation
|
Winn, M.B.
|
|
1985
|
|
P2 |
p. 724-730
7 p.
|
artikel
|
| 46 |
Recent progress in the experiments on thin film growth in Japan
|
Shimaoka, G.
|
|
1985
|
|
P2 |
p. 495-505
11 p.
|
artikel
|
| 47 |
Recent progress in the nondestructive analysis of surfaces, thin films, and interfaces by spectroellipsometry
|
Aspnes, D.E.
|
|
1985
|
|
P2 |
p. 792-803
12 p.
|
artikel
|
| 48 |
Recent progress of amorphous silicon technology and its application to optoelectronic devices
|
Hamakawa, Yoshihiro
|
|
1985
|
|
P2 |
p. 859-878
20 p.
|
artikel
|
| 49 |
Roughening transitions on the helium crystal-superfluid interface
|
Babkin, A.V.
|
|
1985
|
|
P2 |
p. 696-704
9 p.
|
artikel
|
| 50 |
SEM alloyed AuGeNi ohmic contacts to GaAs
|
Nassibian, A.G.
|
|
1985
|
|
P2 |
p. 1019-1026
8 p.
|
artikel
|
| 51 |
Solution deposition of thin solid compound films by a successive ionic-layer adsorption and reaction process
|
Nicolau, Y.F.
|
|
1985
|
|
P2 |
p. 1061-1074
14 p.
|
artikel
|
| 52 |
Structure of iron oxide films prepared by evaporating various iron oxide powders
|
Kaito, C.
|
|
1985
|
|
P2 |
p. 621-630
10 p.
|
artikel
|
| 53 |
Structure of silicon oxide films prepared by vacuum deposition
|
Saito, Yoshio
|
|
1985
|
|
P2 |
p. 613-620
8 p.
|
artikel
|
| 54 |
Subject index
|
|
|
1985
|
|
P2 |
p. 1116-1137
22 p.
|
artikel
|
| 55 |
The Chadi total energy algorithm for determining surface geometries
|
Smith, P.V.
|
|
1985
|
|
P2 |
p. 596-603
8 p.
|
artikel
|
| 56 |
The contribution of kinetic nucleation theories to studies of Volmer-Weber thin film growth
|
Usher, B.F.
|
|
1985
|
|
P2 |
p. 506-511
6 p.
|
artikel
|
| 57 |
The electrical and optical properties of LiAl x B1−x thin films
|
Kezuka, Hiroshi
|
|
1985
|
|
P2 |
p. 820-826
7 p.
|
artikel
|
| 58 |
The growth and structure of RF sputtered indium tin oxide thin films
|
Sreenivas, K.
|
|
1985
|
|
P2 |
p. 670-680
11 p.
|
artikel
|
| 59 |
The growth mode of Cu overlayers on Pd(100)
|
Asonen, H.
|
|
1985
|
|
P2 |
p. 556-564
9 p.
|
artikel
|
| 60 |
The role of hydrogen and boron in a-SiH : B—Electronic and optical properties
|
Savvides, N.
|
|
1985
|
|
P2 |
p. 916-924
9 p.
|
artikel
|
| 61 |
The solution-metal interface: The preparation of, characterization of, and reactions at clean metal surfaces
|
Ritchie, I.M.
|
|
1985
|
|
P2 |
p. 1049-1060
12 p.
|
artikel
|
| 62 |
The surface photovoltage technique: Applications to CdSe films wi
|
Storr, G.J.
|
|
1985
|
|
P2 |
p. 1098-1105
8 p.
|
artikel
|
| 63 |
The synthesis of tellurium oxide by high dose oxygen ion-implantation
|
Singh, Amarjit
|
|
1985
|
|
P2 |
p. 681-685
5 p.
|
artikel
|
| 64 |
Thin film CdS/CdTe solar cells
|
Danaher, W.J.
|
|
1985
|
|
P2 |
p. 1083-1090
8 p.
|
artikel
|
| 65 |
Thin-film edge-aligned junctions for small-area surface studies
|
MacFarlane, J.C.
|
|
1985
|
|
P2 |
p. 1027-1033
7 p.
|
artikel
|
| 66 |
Valence levels of the carbided Ni(110) surface
|
Paolucci, G.
|
|
1985
|
|
P2 |
p. 582-589
8 p.
|
artikel
|
| 67 |
X-ray diffraction investigations on Au/Si alloy films
|
Fischer, W.
|
|
1985
|
|
P2 |
p. 638-644
7 p.
|
artikel
|
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