| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in Hg implanted Hg1−x Cd xTe photovoltaic detectors
|
Fiorito, G.
|
|
1975
|
15 |
4 |
p. 287-293
7 p.
|
artikel
|
| 2 |
Detectivity limits for diffused junction PbSnTe detectors
|
Johnson, M.R.
|
|
1975
|
15 |
4 |
p. 317-329
13 p.
|
artikel
|
| 3 |
Evaluation of Pb0.8Sn0.2Te detector fabrication using surface analysis
|
Longshore, R.
|
|
1975
|
15 |
4 |
p. 311-315
5 p.
|
artikel
|
| 4 |
Experimental study of laser induced temporary degradation in photovoltaic PbSnTe and HgCdTe diodes
|
Allen, R.
|
|
1975
|
15 |
4 |
p. 265-269
5 p.
|
artikel
|
| 5 |
Far infrared atmospheric transmission measurements in North-Norway
|
Dall'Oglio, G.
|
|
1975
|
15 |
4 |
p. 341-
1 p.
|
artikel
|
| 6 |
Gamma noise in CCDs
|
Autio, G.W.
|
|
1975
|
15 |
4 |
p. 249-258
10 p.
|
artikel
|
| 7 |
Model for defects in HgCdTe due to electron irradiation
|
Leadon, R.E.
|
|
1975
|
15 |
4 |
p. 259-264
6 p.
|
artikel
|
| 8 |
Optical immersion of HgCdTe photoconductive detectors
|
Slawek Jr., Joseph E.
|
|
1975
|
15 |
4 |
p. 339-340
2 p.
|
artikel
|
| 9 |
Performance of PbSnTe diodes at moderately reduced backgrounds
|
Chia, P.S.
|
|
1975
|
15 |
4 |
p. 279-285
7 p.
|
artikel
|
| 10 |
Planar Pb0.8Sn0.2Te photodiode array development at the night vision laboratory
|
LoVecchio, P.
|
|
1975
|
15 |
4 |
p. 295-301
7 p.
|
artikel
|
| 11 |
Preparation of vapor grown lead-tin telluride for 8–14 micrometer photodiodes
|
Bradford, A.
|
|
1975
|
15 |
4 |
p. 303-309
7 p.
|
artikel
|
| 12 |
Some properties of photovoltaic Cd x Hg1−x Te detectors for infrared radiation
|
Pawlikowski, J.M.
|
|
1975
|
15 |
4 |
p. 331-337
7 p.
|
artikel
|
| 13 |
Thermal limitations in PbSnTe detectors
|
DeVaux, L.H.
|
|
1975
|
15 |
4 |
p. 271-277
7 p.
|
artikel
|
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