| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absolute coverage measurement of adsorbed CO and D2 on platinum
|
Davies, J.A.
|
|
1980
|
168 |
1-3 |
p. 611-615
5 p.
|
artikel
|
| 2 |
A comparison of thin and thick target methods of measuring proton-induced K-shell ionization cross-sections
|
Barfoot, K.M.
|
|
1980
|
168 |
1-3 |
p. 131-138
8 p.
|
artikel
|
| 3 |
Advances in the use of PIXE and PESA for air pollution sampling
|
Hudson, G.M.
|
|
1980
|
168 |
1-3 |
p. 259-263
5 p.
|
artikel
|
| 4 |
A gold and aluminium implanted standard for ion beam experiments
|
Mitchell, I.V.
|
|
1980
|
168 |
1-3 |
p. 169-174
6 p.
|
artikel
|
| 5 |
A method for determining depth profiles of transition elements in steels
|
Gossett, C.R.
|
|
1980
|
168 |
1-3 |
p. 217-221
5 p.
|
artikel
|
| 6 |
Analysis of surface contaminant covering by ion-electron spectroscopy methods
|
Soszka, M.
|
|
1980
|
168 |
1-3 |
p. 585-588
4 p.
|
artikel
|
| 7 |
Analysis of the dechannelling mechanism due to dislocations
|
Wieluński, L.
|
|
1980
|
168 |
1-3 |
p. 323-328
6 p.
|
artikel
|
| 8 |
A new electrostatic ion microprobe system
|
Krejcik, P.
|
|
1980
|
168 |
1-3 |
p. 247-249
3 p.
|
artikel
|
| 9 |
A new technique for backscattering analysis
|
Keaton, P.W.
|
|
1980
|
168 |
1-3 |
p. 187-190
4 p.
|
artikel
|
| 10 |
An interface — marker technique applied to the study of metal silicide growth
|
Baglin, J.E.E.
|
|
1980
|
168 |
1-3 |
p. 491-497
7 p.
|
artikel
|
| 11 |
A note on the 3He + D nuclear-reaction cross section
|
Möller, W.
|
|
1980
|
168 |
1-3 |
p. 111-114
4 p.
|
artikel
|
| 12 |
A possible application of the SIMS method to determine the provenance of archaeological objects
|
Domański, M.
|
|
1980
|
168 |
1-3 |
p. 435-436
2 p.
|
artikel
|
| 13 |
Application of pixe to the measurement of sputter deposits
|
Krüger, W.
|
|
1980
|
168 |
1-3 |
p. 411-414
4 p.
|
artikel
|
| 14 |
Applications of (n, p) and (n, α) reactions and a backscattering technique to fusion reactor materials, archeometry, and nuclear spectroscopy
|
Fink, D.
|
|
1980
|
168 |
1-3 |
p. 453-457
5 p.
|
artikel
|
| 15 |
Aspects of quantitative secondary ion mass spectrometry
|
Wittmaack̀, Klaus
|
|
1980
|
168 |
1-3 |
p. 343-356
14 p.
|
artikel
|
| 16 |
Author index
|
|
|
1980
|
168 |
1-3 |
p. 617-623
7 p.
|
artikel
|
| 17 |
Biomedical application of PIXE in university of liege
|
Weber, G.
|
|
1980
|
168 |
1-3 |
p. 551-556
6 p.
|
artikel
|
| 18 |
Changes in the surface composition of AgPd, AuPd and CuPd alloys under ion bombardment
|
Betz, G.
|
|
1980
|
168 |
1-3 |
p. 541-545
5 p.
|
artikel
|
| 19 |
Characterization of amorphous silicon films by Rutherford backscattering spectrometry
|
Kubota, K.
|
|
1980
|
168 |
1-3 |
p. 211-215
5 p.
|
artikel
|
| 20 |
Coincidence measurements between scattered particles and x-rays to obtain high depth and mass resolution
|
Bahir, G.
|
|
1980
|
168 |
1-3 |
p. 227-232
6 p.
|
artikel
|
| 21 |
Conference photo
|
|
|
1980
|
168 |
1-3 |
p. viii-
1 p.
|
artikel
|
| 22 |
Correction factor for hair analysis by PIXE
|
Montenegro, E.C.
|
|
1980
|
168 |
1-3 |
p. 479-483
5 p.
|
artikel
|
| 23 |
Creation of surface damage on a nickel (110) surface by bombardment with 3–30 keV noble gas ions
|
Verheij, L.K.
|
|
1980
|
168 |
1-3 |
p. 595-599
5 p.
|
artikel
|
| 24 |
D and 3He trapping and mutual replacement in molybdenum
|
Schulz, R.
|
|
1980
|
168 |
1-3 |
p. 295-299
5 p.
|
artikel
|
| 25 |
Dechannelling and the nature of defect structures in natural type Ia diamonds
|
Fearick, R.W.
|
|
1980
|
168 |
1-3 |
p. 195-202
8 p.
|
artikel
|
| 26 |
Dependence of defect structures on implanted impurity species in Al single crystals
|
Hussain, T.
|
|
1980
|
168 |
1-3 |
p. 317-322
6 p.
|
artikel
|
| 27 |
Depth distributions of low energy deuterium implanted into silicon as determined by sims
|
Magee, Charles W.
|
|
1980
|
168 |
1-3 |
p. 383-387
5 p.
|
artikel
|
| 28 |
Depth profiling of deuterium with the D(3He, p)4He reaction
|
Dieumegard, D.
|
|
1980
|
168 |
1-3 |
p. 223-225
3 p.
|
artikel
|
| 29 |
Depth resolution of sputter profiling investigated by combined Auger-x-ray analysis of thin films
|
Etzkorn, H.W.
|
|
1980
|
168 |
1-3 |
p. 395-398
4 p.
|
artikel
|
| 30 |
Determination of carbon in EFG silicon ribbons by nuclear techniques and SIMS
|
Toulemonde, M.
|
|
1980
|
168 |
1-3 |
p. 415-417
3 p.
|
artikel
|
| 31 |
Determination of oxygen in thin films with the 16O(3He, pγ)18F reaction
|
Heggie, J.C.P.
|
|
1980
|
168 |
1-3 |
p. 125-129
5 p.
|
artikel
|
| 32 |
Deuterium enrichment during ion bombardment in VD0.01 alloys
|
Yamaguchi, S.
|
|
1980
|
168 |
1-3 |
p. 301-305
5 p.
|
artikel
|
| 33 |
Distortion of depth profiles during sputtering
|
Sigmund, P.
|
|
1980
|
168 |
1-3 |
p. 389-394
6 p.
|
artikel
|
| 34 |
Edge-effects correction in depth profiles obtained by ion-beam sputtering
|
Tsong, I.S.T.
|
|
1980
|
168 |
1-3 |
p. 399-404
6 p.
|
artikel
|
| 35 |
Editorial Board
|
|
|
1980
|
168 |
1-3 |
p. IFC-
1 p.
|
artikel
|
| 36 |
Effects of surface roughness on backscattering spectra
|
Knudson, A.R.
|
|
1980
|
168 |
1-3 |
p. 163-167
5 p.
|
artikel
|
| 37 |
Electronic energy loss of H, D and He in Au below 20 keV
|
Blume, R.
|
|
1980
|
168 |
1-3 |
p. 57-62
6 p.
|
artikel
|
| 38 |
Elemental microanalysis of biological and medical specimens with a scanning proton microprobe
|
Legge, G.J.F.
|
|
1980
|
168 |
1-3 |
p. 563-569
7 p.
|
artikel
|
| 39 |
Elimination of the beam effect on channeling dips of bismuth implanted in silicon
|
Wagh, A.G.
|
|
1980
|
168 |
1-3 |
p. 191-194
4 p.
|
artikel
|
| 40 |
Energy loss of light ions in diamond
|
Fearick, R.W.
|
|
1980
|
168 |
1-3 |
p. 51-55
5 p.
|
artikel
|
| 41 |
Energy loss of protons in Si, Ge and Mo
|
Izmailov, Sh.Z.
|
|
1980
|
168 |
1-3 |
p. 81-84
4 p.
|
artikel
|
| 42 |
Energy-loss straggling of alpha particles in Al, Ni and Au
|
Friedland, E.
|
|
1980
|
168 |
1-3 |
p. 25-27
3 p.
|
artikel
|
| 43 |
Evaporation loss and diffusion of antimony in silicon under pulsed laser irradiation
|
Jain, Animesh K.
|
|
1980
|
168 |
1-3 |
p. 473-477
5 p.
|
artikel
|
| 44 |
Heavy ion induced desorption of organic compounds
|
Dück, P.
|
|
1980
|
168 |
1-3 |
p. 601-605
5 p.
|
artikel
|
| 45 |
Heavy ion microlithography — a new tool to generate and investigate submicroscopic structures
|
Fischer, Bernd Eberhard
|
|
1980
|
168 |
1-3 |
p. 241-246
6 p.
|
artikel
|
| 46 |
High resolution scanning ion probes: Applications to physics and biology
|
Levi-Setti, R.
|
|
1980
|
168 |
1-3 |
p. 139-149
11 p.
|
artikel
|
| 47 |
Hydrogen and helium stopping powers of rare-earth metals
|
Knudsen, H.
|
|
1980
|
168 |
1-3 |
p. 41-50
10 p.
|
artikel
|
| 48 |
Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques
|
Benenson, R.E.
|
|
1980
|
168 |
1-3 |
p. 547-550
4 p.
|
artikel
|
| 49 |
Investigation of the solid-state reaction between nickel oxide and alumina by Rutherford backscattering (RBS)
|
De Roos, G.
|
|
1980
|
168 |
1-3 |
p. 485-489
5 p.
|
artikel
|
| 50 |
Ion backscattering and x-ray investigations of violin varnish and wood
|
Arne Tove, Per
|
|
1980
|
168 |
1-3 |
p. 441-446
6 p.
|
artikel
|
| 51 |
Ion-beam analysis of meteoritic and lunar samples
|
Tombrello, T.A.
|
|
1980
|
168 |
1-3 |
p. 459-467
9 p.
|
artikel
|
| 52 |
Ion-beam-induced annealing effects in GaAs
|
Williams, J.S.
|
|
1980
|
168 |
1-3 |
p. 307-312
6 p.
|
artikel
|
| 53 |
Ion beam induced desorption of surface layers
|
Taglauer, E.
|
|
1980
|
168 |
1-3 |
p. 571-577
7 p.
|
artikel
|
| 54 |
Ion-beam-induced migration and its effect on concentration profiles
|
Myers, S.M.
|
|
1980
|
168 |
1-3 |
p. 265-274
10 p.
|
artikel
|
| 55 |
Ion beam monitoring using thin self-supporting reference foils
|
Mitchell, I.V.
|
|
1980
|
168 |
1-3 |
p. 233-240
8 p.
|
artikel
|
| 56 |
Ion-induced adsorption of oxygen at a Cu(110) surface
|
De Wit, A.G.J.
|
|
1980
|
168 |
1-3 |
p. 607-609
3 p.
|
artikel
|
| 57 |
Ion induced Auger spectroscopy
|
Thomas, E.W.
|
|
1980
|
168 |
1-3 |
p. 379-382
4 p.
|
artikel
|
| 58 |
Ion induced secondary electron emission as a probe for adsorbed oxygen on tungsten
|
Hasselkamp, D.
|
|
1980
|
168 |
1-3 |
p. 579-583
5 p.
|
artikel
|
| 59 |
Irradiation chamber and sample changer for biological samples
|
Kraft, G.
|
|
1980
|
168 |
1-3 |
p. 175-179
5 p.
|
artikel
|
| 60 |
Laser induced surface alloy formation and diffusion of antimony in aluminium
|
Jain, Animesh K.
|
|
1980
|
168 |
1-3 |
p. 275-282
8 p.
|
artikel
|
| 61 |
Light emission from sputtered oxygen
|
Schartner, K.-H.
|
|
1980
|
168 |
1-3 |
p. 419-423
5 p.
|
artikel
|
| 62 |
Light volatiles in diamond: Physical interpretation and genetic significance
|
Sellschop, J.P.F.
|
|
1980
|
168 |
1-3 |
p. 529-534
6 p.
|
artikel
|
| 63 |
Measurements of 10Be distributions using a Tandem Van De Graaff accelerator
|
Lanford, W.A.
|
|
1980
|
168 |
1-3 |
p. 505-510
6 p.
|
artikel
|
| 64 |
Microanalysis of Flourine by nuclear reactions
|
Dieumegard, D.
|
|
1980
|
168 |
1-3 |
p. 93-103
11 p.
|
artikel
|
| 65 |
Nuclear cross sections for ion beam analysis
|
Bird, J.R.
|
|
1980
|
168 |
1-3 |
p. 85-91
7 p.
|
artikel
|
| 66 |
Nuclear reaction analysis for measuring moisture profiles in graphite/epoxy composites
|
Schulte, R.L.
|
|
1980
|
168 |
1-3 |
p. 535-539
5 p.
|
artikel
|
| 67 |
Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films
|
Ligeon, E.
|
|
1980
|
168 |
1-3 |
p. 499-504
6 p.
|
artikel
|
| 68 |
Particle-induced x-ray emission (PIXE) analysis of biological materials: Precision, accuracy and application to cancer tissues
|
Maenhaut, W.
|
|
1980
|
168 |
1-3 |
p. 557-562
6 p.
|
artikel
|
| 69 |
PIXE and NRA environmental studies by means of lichen indicators
|
Hrynkiewicz, A.Z.
|
|
1980
|
168 |
1-3 |
p. 517-521
5 p.
|
artikel
|
| 70 |
PIXE-PIGME studies of artefacts
|
Duerden, P.
|
|
1980
|
168 |
1-3 |
p. 447-452
6 p.
|
artikel
|
| 71 |
PIXE research with an external beam
|
Chen, Jian-Xin
|
|
1980
|
168 |
1-3 |
p. 437-440
4 p.
|
artikel
|
| 72 |
Preface
|
|
|
1980
|
168 |
1-3 |
p. vii-
1 p.
|
artikel
|
| 73 |
Proton induced γ-ray yields
|
Kenny, M.J.
|
|
1980
|
168 |
1-3 |
p. 115-120
6 p.
|
artikel
|
| 74 |
Quantitative microanalysis by heavy ion BEM induced X-ray excitation
|
Mitchell, I.V.
|
|
1980
|
168 |
1-3 |
p. 121-123
3 p.
|
artikel
|
| 75 |
Radioisotope detection with tandem electrostatic accelerators
|
Gove, H.E.
|
|
1980
|
168 |
1-3 |
p. 425-433
9 p.
|
artikel
|
| 76 |
Range parameters of protons in silicon implanted at energies from 0.5 to 300 keV
|
Demond, F.-J.
|
|
1980
|
168 |
1-3 |
p. 69-74
6 p.
|
artikel
|
| 77 |
RBS and channelling analysis of As and Ga in laser doped silicon
|
Berger, R.
|
|
1980
|
168 |
1-3 |
p. 469-472
4 p.
|
artikel
|
| 78 |
Recoil mixing in solids by energetic ion beams
|
Littmark, Uffe
|
|
1980
|
168 |
1-3 |
p. 329-342
14 p.
|
artikel
|
| 79 |
Search for the influence of chemical effect on the stopping power: The case of oxides
|
Blondiaux, G.
|
|
1980
|
168 |
1-3 |
p. 29-31
3 p.
|
artikel
|
| 80 |
(110) Si surface peak analysis by 100–350 keV protons
|
Hubbes, H.H.
|
|
1980
|
168 |
1-3 |
p. 313-315
3 p.
|
artikel
|
| 81 |
Si(001) surface studies using high energy ion scattering
|
Feldman, L.C.
|
|
1980
|
168 |
1-3 |
p. 589-593
5 p.
|
artikel
|
| 82 |
Sputtering rates of minerals and implications for abundances of solar elements in lunar samples
|
Jull, A.J.T.
|
|
1980
|
168 |
1-3 |
p. 357-365
9 p.
|
artikel
|
| 83 |
Stopping power and straggling of 80–500 keV lithium ions in C, Al, Ni, Cu, Ag, and Te
|
Andersen, H.H.
|
|
1980
|
168 |
1-3 |
p. 75-80
6 p.
|
artikel
|
| 84 |
Stopping powers and backscattered charge fractions for 20–150 keV H+ and He+ on gold
|
Thompson, D.A.
|
|
1980
|
168 |
1-3 |
p. 63-68
6 p.
|
artikel
|
| 85 |
Stopping ratios of 50–300 keV light ions in metals
|
Mertens, P.
|
|
1980
|
168 |
1-3 |
p. 33-39
7 p.
|
artikel
|
| 86 |
Straggling in energy loss of energetic hydrogen and helium ions
|
Besenbacher, F.
|
|
1980
|
168 |
1-3 |
p. 1-15
15 p.
|
artikel
|
| 87 |
Surface roughening of copper by low energy ion bombardment
|
Naundorf, V.
|
|
1980
|
168 |
1-3 |
p. 405-409
5 p.
|
artikel
|
| 88 |
Surface topology using rutherford backscattering
|
Edge, R.D.
|
|
1980
|
168 |
1-3 |
p. 157-162
6 p.
|
artikel
|
| 89 |
The application of ion beam methods to diffusion and permeation measurements
|
Möller, W.
|
|
1980
|
168 |
1-3 |
p. 289-294
6 p.
|
artikel
|
| 90 |
The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors
|
Ahmed, N.A.G.
|
|
1980
|
168 |
1-3 |
p. 283-288
6 p.
|
artikel
|
| 91 |
The high sensitivity measurement of carbon using the nuclear microprobe
|
Pummery, F.C.W.
|
|
1980
|
168 |
1-3 |
p. 181-185
5 p.
|
artikel
|
| 92 |
The 14N(d, p5)15N cross section, 0.32–1.45 MeV
|
Niiler, A.
|
|
1980
|
168 |
1-3 |
p. 105-109
5 p.
|
artikel
|
| 93 |
The nuclear microprobe determination of the spatial distribution of stable isotope tracers
|
Hirst, P.M.
|
|
1980
|
168 |
1-3 |
p. 203-209
7 p.
|
artikel
|
| 94 |
The stopping of energetic ions in solids
|
Ziegler, J.F.
|
|
1980
|
168 |
1-3 |
p. 17-24
8 p.
|
artikel
|
| 95 |
The use of PIXE for the measurement of thorium and uranium at μgg−1 levels in thick ore samples
|
Cohen, D.D.
|
|
1980
|
168 |
1-3 |
p. 523-528
6 p.
|
artikel
|
| 96 |
The use of proton induced x-ray emission in the design and evaluation of catalysts
|
Cairns, James A.
|
|
1980
|
168 |
1-3 |
p. 511-516
6 p.
|
artikel
|
| 97 |
Towards a universal model for sputtered ion emission
|
Williams, Peter
|
|
1980
|
168 |
1-3 |
p. 373-377
5 p.
|
artikel
|
| 98 |
Trace analysis in cadmium telluride by heavy ion induced x-ray emission and by SIMS
|
Scharager, C.
|
|
1980
|
168 |
1-3 |
p. 367-371
5 p.
|
artikel
|
| 99 |
Trace element detection sensitivity in PIXE analysis by means of an external proton beam
|
Raith, B.
|
|
1980
|
168 |
1-3 |
p. 251-257
7 p.
|
artikel
|
| 100 |
Use of non-Coulomb H ion backscattering to characterize thick anodized aluminum films
|
Gossett, C.R.
|
|
1980
|
168 |
1-3 |
p. 151-155
5 p.
|
artikel
|
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