| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anomalous Stark effect and optical properties of exciton in a quantum dot with linear potential under ionized donor hydrogenic impurity
|
Varsha,
|
|
|
48 |
C |
p. 17-28
|
artikel
|
| 2 |
Arrays of size-dispersed ZnSe quantum dots as artificial antennas: Role of quasi-coherent regime and in-gap states of excitons for enhanced light harvesting and energy transfer
|
Bondar, Nikolai V.
|
|
|
48 |
C |
p. 114-122
|
artikel
|
| 3 |
A self - Consistent higher-order strain gradient plasticity analysis of micropolar dual-phase crystalline FGM made of Titanium-boride/ Titanium
|
Vakil, Saeed
|
|
|
48 |
C |
p. 53-69
|
artikel
|
| 4 |
Characterization of dextran-coated magnetic nanoparticles (Fe3O4) conjugated with monoclonal antibody through low gradient magnet and centrifugation-based buffer separation processes
|
Choi, Jong-Gu
|
|
|
48 |
C |
p. 79-83
|
artikel
|
| 5 |
Crystal violet as CMOS-compatible alkali-free promoter for CVD growth of MoSe2 monolayers: Comparative surface analysis with alkali-based promoter
|
Kim, Su Jin
|
|
|
48 |
C |
p. 106-113
|
artikel
|
| 6 |
Dopant-based modulation of structural, electronic, and electrochemical properties of Li-excessive Li2NiO2 cathodes
|
Han, Hyungu
|
|
|
48 |
C |
p. 1-10
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
48 |
C |
p. IFC
|
artikel
|
| 8 |
Effect of proton irradiation on interfacial and electrical performance of N+Np+ InP/InGaAs hetero-junction
|
Zhang, Chen
|
|
|
48 |
C |
p. 47-52
|
artikel
|
| 9 |
Effects of forming gas annealing on the doping of monolayer MoS2 crystals
|
Koo, Youjin
|
|
|
48 |
C |
p. 29-33
|
artikel
|
| 10 |
Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres
|
Du, Ling
|
|
|
48 |
C |
p. 123-133
|
artikel
|
| 11 |
Fabrication of suspended graphene field-effect transistors by the sandwich method
|
Shin, Hyunsuk
|
|
|
48 |
C |
p. 42-46
|
artikel
|
| 12 |
First-principles study of SrTe and BaTe: Promising wide-band-gap semiconductors with ambipolar doping
|
Kim, Jinseok
|
|
|
48 |
C |
p. 90-96
|
artikel
|
| 13 |
Persistent and reliable electrical properties of ReS2 FETs using PMMA encapsulation
|
Ryu, Eui-Hyoun
|
|
|
48 |
C |
p. 11-16
|
artikel
|
| 14 |
Phase transition enhanced thermoelectric performance for perovskites: The case of AgTaO3
|
Wang, Zhijun
|
|
|
48 |
C |
p. 84-89
|
artikel
|
| 15 |
Three-terminal nonvolatile memory photodetectors based on rationally engineered heterostructured tin zinc oxide nanowires
|
Zhang, WenXin
|
|
|
48 |
C |
p. 34-41
|
artikel
|
| 16 |
Using SiNx double-layer deposition to reduce electrode incidence of short circuits due to impurity particles in thin film transistor preparation
|
Zhao, Shuo
|
|
|
48 |
C |
p. 97-105
|
artikel
|
| 17 |
YBCO polycrystal co-added with BaTiO3 and WO3 nanoparticles: Fluctuation induced conductivity and pseudogap studies
|
Hannachi, E.
|
|
|
48 |
C |
p. 70-78
|
artikel
|
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