| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio study of the elastic properties of TiSi2
|
Wang, Tao
|
|
2005
|
8 |
4 |
p. 540-544
5 p.
|
artikel
|
| 2 |
Analysis of instability in a critical dimension bar due to focus and exposure
|
Kuo, Yang-Kuao
|
|
2005
|
8 |
4 |
p. 483-490
8 p.
|
artikel
|
| 3 |
Anomalous characteristics of platelet defects formed by zero angle tilt hydrogen implantation in silicon wafers
|
Xiao, Qinghua
|
|
2005
|
8 |
4 |
p. 520-524
5 p.
|
artikel
|
| 4 |
A novel nano-architecture for ZnO thin films on ‹ 1 0 0 › Si, GaAs and InP single crystal wafers by L-MBE as value in nano-robotic (machining) device fabrication efforts
|
Ramamoorthy, K.
|
|
2005
|
8 |
4 |
p. 555-563
9 p.
|
artikel
|
| 5 |
A novel Ni capped high Q copper air gap spiral inductor
|
Lin, C.S.
|
|
2005
|
8 |
4 |
p. 545-549
5 p.
|
artikel
|
| 6 |
Corrigendum to: “Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation”
|
Mei, Y.F.
|
|
2005
|
8 |
4 |
p. 568-
1 p.
|
artikel
|
| 7 |
Crystal growth and characterizations of diluted magnetic semiconductor Mn x Cd1− x In2Te4
|
Jie, Wanqi
|
|
2005
|
8 |
4 |
p. 564-567
4 p.
|
artikel
|
| 8 |
Curvature of band overlap in InAs/GaSb Type II superlattices
|
Ekpunobi, A.J.
|
|
2005
|
8 |
4 |
p. 463-466
4 p.
|
artikel
|
| 9 |
Effects of deposition temperature on the structure and thermal stability of a-C:F films with low dielectric constant
|
Ning, Zhaoyuan
|
|
2005
|
8 |
4 |
p. 467-471
5 p.
|
artikel
|
| 10 |
Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant
|
Yarn, K.F.
|
|
2005
|
8 |
4 |
p. 550-554
5 p.
|
artikel
|
| 11 |
Generalization of Einstein relation for organic semiconductor thin films
|
Peng, Y.Q.
|
|
2005
|
8 |
4 |
p. 525-530
6 p.
|
artikel
|
| 12 |
Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices
|
Ekpunobi, A.J.
|
|
2005
|
8 |
4 |
p. 472-475
4 p.
|
artikel
|
| 13 |
Influence of nitrogen annealing on structural and photoluminescent properties of ZnO thin film grown on c-Al2O3 by atmospheric pressure MOCVD
|
Chen, Yufeng
|
|
2005
|
8 |
4 |
p. 491-496
6 p.
|
artikel
|
| 14 |
Laser decapsulation of molding compound from wafer level chip size package for solder reflowing
|
Qiu, H.
|
|
2005
|
8 |
4 |
p. 502-510
9 p.
|
artikel
|
| 15 |
Microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN studied by X-ray diffraction
|
Hu, C.Y.
|
|
2005
|
8 |
4 |
p. 515-519
5 p.
|
artikel
|
| 16 |
Modeling rhenium metallization of a silicon-rich (001) 6H-SiC surface
|
Wiff, D.R.
|
|
2005
|
8 |
4 |
p. 497-501
5 p.
|
artikel
|
| 17 |
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences
|
Zhao, Y.W.
|
|
2005
|
8 |
4 |
p. 531-535
5 p.
|
artikel
|
| 18 |
Synthesis, structure and optical properties of GaN nanocrystallites
|
Nyk, M.
|
|
2005
|
8 |
4 |
p. 511-514
4 p.
|
artikel
|
| 19 |
The investigation of mole fraction dependence of mobility for In x Ga1− x N alloy
|
Aydogu, S.
|
|
2005
|
8 |
4 |
p. 536-539
4 p.
|
artikel
|
| 20 |
Thermal-induced normal grain growth mechanism in LPCVD polysilicon film
|
Akhtar, J.
|
|
2005
|
8 |
4 |
p. 476-482
7 p.
|
artikel
|
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