| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances on doping strategies for triple-gate finFETs and lateral gate-all-around nanowire FETs and their impact on device performance
|
Veloso, A.
|
|
2017
|
62 |
C |
p. 2-12
|
artikel
|
| 2 |
Deterministic doping
|
Jamieson, David N.
|
|
2017
|
62 |
C |
p. 23-30
|
artikel
|
| 3 |
Dopant, composition and carrier profiling for 3D structures
|
Vandervorst, W.
|
|
2017
|
62 |
C |
p. 31-48
|
artikel
|
| 4 |
Doping by flash lamp annealing
|
Prucnal, S.
|
|
2017
|
62 |
C |
p. 115-127
|
artikel
|
| 5 |
Doping of III-nitride materials
|
Pampili, Pietro
|
|
2017
|
62 |
C |
p. 180-191
|
artikel
|
| 6 |
Doping of semiconductor devices by Laser Thermal Annealing
|
Huet, Karim
|
|
2017
|
62 |
C |
p. 92-102
|
artikel
|
| 7 |
Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications
|
Ye, Liang
|
|
2017
|
62 |
C |
p. 128-134
|
artikel
|
| 8 |
Doping of silicon nanocrystals
|
Arduca, Elisa
|
|
2017
|
62 |
C |
p. 156-170
|
artikel
|
| 9 |
Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
|
Long, B.
|
|
2017
|
62 |
C |
p. 196-200
|
artikel
|
| 10 |
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy
|
Sanson, A.
|
|
2017
|
62 |
C |
p. 205-208
|
artikel
|
| 11 |
Hyperdoping of Si by ion implantation and pulsed laser melting
|
Yang, Wenjie
|
|
2017
|
62 |
C |
p. 103-114
|
artikel
|
| 12 |
Improved physical models for advanced silicon device processing
|
Pelaz, Lourdes
|
|
2017
|
62 |
C |
p. 62-79
|
artikel
|
| 13 |
Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys
|
Tran, Tuan T.
|
|
2017
|
62 |
C |
p. 192-195
|
artikel
|
| 14 |
Ion implantation of advanced silicon devices: Past, present and future
|
Current, Michael I.
|
|
2017
|
62 |
C |
p. 13-22
|
artikel
|
| 15 |
Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
|
Lombardo, S.F.
|
|
2017
|
62 |
C |
p. 80-91
|
artikel
|
| 16 |
Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
|
Settino, Francesco
|
|
2017
|
62 |
C |
p. 201-204
|
artikel
|
| 17 |
Multiscale modeling of doping processes in advanced semiconductor devices
|
Zographos, Nikolas
|
|
2017
|
62 |
C |
p. 49-61
|
artikel
|
| 18 |
N-type Doping Strategies for InGaAs
|
Aldridge Jr, Henry
|
|
2017
|
62 |
C |
p. 171-179
|
artikel
|
| 19 |
Preface
|
Napolitani, Enrico
|
|
2017
|
62 |
C |
p. 1
|
artikel
|
| 20 |
Progress in doping semiconductor nanowires during growth
|
Dayeh, Shadi A.
|
|
2017
|
62 |
C |
p. 135-155
|
artikel
|
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