| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates
|
Kuno, T.
|
|
2003
|
6 |
5-6 |
p. 461-464
4 p.
|
artikel
|
| 2 |
Amphoteric nature of vacancies in zinc blende semiconductors
|
Chadi, D.J.
|
|
2003
|
6 |
5-6 |
p. 281-284
4 p.
|
artikel
|
| 3 |
Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe
|
Suto, K.
|
|
2003
|
6 |
5-6 |
p. 289-292
4 p.
|
artikel
|
| 4 |
Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy
|
Oh, D.C
|
|
2003
|
6 |
5-6 |
p. 567-571
5 p.
|
artikel
|
| 5 |
Characterizations of In x Al y Ga1−x−y N alloy systems grown on GaN substrates by molecular-beam epitaxy
|
Iwata, S.
|
|
2003
|
6 |
5-6 |
p. 527-530
4 p.
|
artikel
|
| 6 |
Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques
|
Samoylov, Alexander M
|
|
2003
|
6 |
5-6 |
p. 481-485
5 p.
|
artikel
|
| 7 |
Comparison of p+–n junction formed by BF2 + and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics
|
Srivastava, Ajay K.
|
|
2003
|
6 |
5-6 |
p. 555-559
5 p.
|
artikel
|
| 8 |
Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios
|
Seki, N.
|
|
2003
|
6 |
5-6 |
p. 307-309
3 p.
|
artikel
|
| 9 |
Control of Ga doping level in β-FeSi2 using Sn–Ga solvent
|
Udono, Haruhiko
|
|
2003
|
6 |
5-6 |
p. 285-287
3 p.
|
artikel
|
| 10 |
Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
|
Uedono, A.
|
|
2003
|
6 |
5-6 |
p. 367-369
3 p.
|
artikel
|
| 11 |
Detailed analysis of absorption data for indium nitride
|
Butcher, K.S.A.
|
|
2003
|
6 |
5-6 |
p. 351-354
4 p.
|
artikel
|
| 12 |
Development of an intelligent design tool for non-stoichiometric compound devices: an example
|
Chang, H.H.
|
|
2003
|
6 |
5-6 |
p. 401-407
7 p.
|
artikel
|
| 13 |
Device advantage of the dislocation-free pressure grown GaN substrates
|
Boćkowski, M.
|
|
2003
|
6 |
5-6 |
p. 347-350
4 p.
|
artikel
|
| 14 |
Diffusion of nonstoichiometric defects in n-GaP crystals
|
Tanno, Takenori
|
|
2003
|
6 |
5-6 |
p. 441-443
3 p.
|
artikel
|
| 15 |
Dislocation–impurity interaction in Si
|
Yonenaga, I
|
|
2003
|
6 |
5-6 |
p. 355-358
4 p.
|
artikel
|
| 16 |
Dopant diffusion in GaP and related compounds: recent results and new considerations
|
Stolwijk, N.A.
|
|
2003
|
6 |
5-6 |
p. 315-318
4 p.
|
artikel
|
| 17 |
Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum
|
Ohno, Takeo
|
|
2003
|
6 |
5-6 |
p. 421-424
4 p.
|
artikel
|
| 18 |
Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire
|
Setiawan, A.
|
|
2003
|
6 |
5-6 |
p. 371-374
4 p.
|
artikel
|
| 19 |
Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction
|
Ohno, Takeo
|
|
2003
|
6 |
5-6 |
p. 417-420
4 p.
|
artikel
|
| 20 |
Energy level of minority carrier trap centers induced by light illumination in B-doped Cz-Si solar cells
|
Vu, Tuong Khanh
|
|
2003
|
6 |
5-6 |
p. 551-553
3 p.
|
artikel
|
| 21 |
Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (001), (111)A,B and (110) surfaces
|
Kochiya, Toshio
|
|
2003
|
6 |
5-6 |
p. 465-468
4 p.
|
artikel
|
| 22 |
Epitaxial ZnO films grown by RF-assisted low-temperature CVD method
|
Ataev, B.M.
|
|
2003
|
6 |
5-6 |
p. 535-537
3 p.
|
artikel
|
| 23 |
EPR studies of native and impurity-related defects in II–IV–V2 semiconductors
|
Gehlhoff, W.
|
|
2003
|
6 |
5-6 |
p. 379-383
5 p.
|
artikel
|
| 24 |
EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors
|
Sato, K.
|
|
2003
|
6 |
5-6 |
p. 335-338
4 p.
|
artikel
|
| 25 |
ESR signature of tetra-interstitial defect in silicon
|
Mchedlidze, T.
|
|
2003
|
6 |
5-6 |
p. 263-266
4 p.
|
artikel
|
| 26 |
Etch pits observation and etching properties of β-FeSi2
|
Udono, Haruhiko
|
|
2003
|
6 |
5-6 |
p. 413-416
4 p.
|
artikel
|
| 27 |
Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometry
|
Oyama, Yutaka
|
|
2003
|
6 |
5-6 |
p. 297-301
5 p.
|
artikel
|
| 28 |
Fluorescence EXAFS analysis of ErP grown on InP by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3
|
Ofuchi, H.
|
|
2003
|
6 |
5-6 |
p. 469-472
4 p.
|
artikel
|
| 29 |
Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy
|
Nishizawa, Jun-ichi
|
|
2003
|
6 |
5-6 |
p. 429-431
3 p.
|
artikel
|
| 30 |
Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
|
Oga, Ryo
|
|
2003
|
6 |
5-6 |
p. 477-480
4 p.
|
artikel
|
| 31 |
High-energy photoemission spectroscopy of ferromagnetic Ga1−x Mn x N
|
Kim, J.J.
|
|
2003
|
6 |
5-6 |
p. 503-506
4 p.
|
artikel
|
| 32 |
Increase of GaP green LED efficiency with pre-annealing of the substrate
|
Tanno, Takenori
|
|
2003
|
6 |
5-6 |
p. 433-435
3 p.
|
artikel
|
| 33 |
Influence of pinning trap in Ti/4H–SiC Schottky barrier diode
|
Ohtsuka, K.
|
|
2003
|
6 |
5-6 |
p. 359-362
4 p.
|
artikel
|
| 34 |
Interaction of electrical active intrinsic defects in Sn-doping Bi2Te3
|
Zhitinskaya, M.K.
|
|
2003
|
6 |
5-6 |
p. 449-452
4 p.
|
artikel
|
| 35 |
Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon
|
Tokuda, Yutaka
|
|
2003
|
6 |
5-6 |
p. 277-279
3 p.
|
artikel
|
| 36 |
Lifetime control by Fe doping in n-type silicon
|
Nishizawa, J.
|
|
2003
|
6 |
5-6 |
p. 273-275
3 p.
|
artikel
|
| 37 |
Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy
|
Ogawa, K.
|
|
2003
|
6 |
5-6 |
p. 425-427
3 p.
|
artikel
|
| 38 |
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
|
Leung, B.H.
|
|
2003
|
6 |
5-6 |
p. 523-525
3 p.
|
artikel
|
| 39 |
Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage
|
Nishizawa, Jun-ichi
|
|
2003
|
6 |
5-6 |
p. 363-366
4 p.
|
artikel
|
| 40 |
Low-temperature growth of nitrogen-doped BeTe and ZnSe/BeTe:N superlattices for delta doping
|
Kojima, K.
|
|
2003
|
6 |
5-6 |
p. 511-514
4 p.
|
artikel
|
| 41 |
Luminescent properties of ZnCdSe/ZnMnSe superlattices
|
Fujita, Atsuki
|
|
2003
|
6 |
5-6 |
p. 457-460
4 p.
|
artikel
|
| 42 |
Melt growth and stoichiometry control of (Cd1−x Zn x )1+yTe single crystals
|
Takahashi, Junichi
|
|
2003
|
6 |
5-6 |
p. 453-456
4 p.
|
artikel
|
| 43 |
Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers
|
Tanno, Takenori
|
|
2003
|
6 |
5-6 |
p. 437-440
4 p.
|
artikel
|
| 44 |
Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation
|
Kiessling, F.-M.
|
|
2003
|
6 |
5-6 |
p. 303-306
4 p.
|
artikel
|
| 45 |
Nonstoichiometry and defects in III–V compounds
|
Zlomanov, Vladimir P.
|
|
2003
|
6 |
5-6 |
p. 311-314
4 p.
|
artikel
|
| 46 |
Nonstoichiometry and point defects in nonlinear optical crystals A2B4C2 5
|
Voevodin, Valeriy G.
|
|
2003
|
6 |
5-6 |
p. 385-388
4 p.
|
artikel
|
| 47 |
Non-stoichiometry and problem of heavy doping in semiconductor phases
|
Rogacheva, E.I.
|
|
2003
|
6 |
5-6 |
p. 491-496
6 p.
|
artikel
|
| 48 |
Nonstoichiometry and solubility of impurity in In-doped PbTe films on Si substrates
|
Samoylov, Alexander M
|
|
2003
|
6 |
5-6 |
p. 327-333
7 p.
|
artikel
|
| 49 |
Non-stoichiometry in SnTe thin films and temperature instabilities of thermoelectric properties
|
Rogacheva, E.I.
|
|
2003
|
6 |
5-6 |
p. 497-501
5 p.
|
artikel
|
| 50 |
N-type implantation doping of GaN
|
Nakano, Yoshitaka
|
|
2003
|
6 |
5-6 |
p. 515-517
3 p.
|
artikel
|
| 51 |
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
|
Giehler, M.
|
|
2003
|
6 |
5-6 |
p. 257-261
5 p.
|
artikel
|
| 52 |
Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy
|
Harada, Chihiro
|
|
2003
|
6 |
5-6 |
p. 539-541
3 p.
|
artikel
|
| 53 |
Polarity control of GaN epilayers grown on ZnO templates
|
Suzuki, Takuma
|
|
2003
|
6 |
5-6 |
p. 519-521
3 p.
|
artikel
|
| 54 |
Preface
|
Suto, K.
|
|
2003
|
6 |
5-6 |
p. 247-
1 p.
|
artikel
|
| 55 |
Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP
|
Yasuda, Arata
|
|
2003
|
6 |
5-6 |
p. 487-490
4 p.
|
artikel
|
| 56 |
Properties of pulsed laser deposited vanadium oxide thin film thermistor
|
kumar, R.T.Rajendra
|
|
2003
|
6 |
5-6 |
p. 375-377
3 p.
|
artikel
|
| 57 |
Raman spectra of GaPAs–GaP heterostructure waveguides
|
Tanabe, T.
|
|
2003
|
6 |
5-6 |
p. 445-447
3 p.
|
artikel
|
| 58 |
Realization of one-chip-two-wavelength light sources
|
Song, J.S.
|
|
2003
|
6 |
5-6 |
p. 561-565
5 p.
|
artikel
|
| 59 |
Real structure of partially ordered crystals
|
Kienle, L.
|
|
2003
|
6 |
5-6 |
p. 393-396
4 p.
|
artikel
|
| 60 |
Reduction of defect states of tantalum oxide thin films with additive elements
|
Salam, K.M.A.
|
|
2003
|
6 |
5-6 |
p. 531-533
3 p.
|
artikel
|
| 61 |
Science and prospects for non-stoichiometry in dielectrics
|
Pei, Z.
|
|
2003
|
6 |
5-6 |
p. 339-342
4 p.
|
artikel
|
| 62 |
Self-diffusion of cadmium in cadmium telluride annealed in tellurium-saturated atmosphere
|
Kanno, R.
|
|
2003
|
6 |
5-6 |
p. 319-322
4 p.
|
artikel
|
| 63 |
SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B
|
Hirata, T.
|
|
2003
|
6 |
5-6 |
p. 473-476
4 p.
|
artikel
|
| 64 |
STM nanospectroscopic studies of individual As-antisite defects in GaAs
|
Maeda, K.
|
|
2003
|
6 |
5-6 |
p. 253-256
4 p.
|
artikel
|
| 65 |
Stoichiometry control and point defects in compound semiconductors
|
Nishizawa, Jun-ichi
|
|
2003
|
6 |
5-6 |
p. 249-252
4 p.
|
artikel
|
| 66 |
Stoichiometry control of some II–VI ternary solid solutions during sublimation growth
|
Mochizuki, Katsumi
|
|
2003
|
6 |
5-6 |
p. 293-296
4 p.
|
artikel
|
| 67 |
Structural characterization of DC magnetron-sputtered TiO2 thin films using XRD and Raman scattering studies
|
Karunagaran, B.
|
|
2003
|
6 |
5-6 |
p. 547-550
4 p.
|
artikel
|
| 68 |
Structural properties of V2O5 thin films prepared by vacuum evaporation
|
Rajendra Kumar, R.T.
|
|
2003
|
6 |
5-6 |
p. 543-546
4 p.
|
artikel
|
| 69 |
Structure and optical properties of ZnSeO alloys with O composition up to 6.4%
|
Nabetani, Y.
|
|
2003
|
6 |
5-6 |
p. 343-346
4 p.
|
artikel
|
| 70 |
The behaviour of in-diffused copper in n-type CdSnAs2
|
Daunov, M.I
|
|
2003
|
6 |
5-6 |
p. 323-326
4 p.
|
artikel
|
| 71 |
The magnetic properties in transition metal-doped chalcopyrite semiconductors
|
Kamatani, T
|
|
2003
|
6 |
5-6 |
p. 389-391
3 p.
|
artikel
|
| 72 |
The one-step vacuum growth of high-quality CuInS2 thin film suitable for photovoltaic applications
|
Shao, Lexi
|
|
2003
|
6 |
5-6 |
p. 397-400
4 p.
|
artikel
|
| 73 |
Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model
|
Ito, Y.
|
|
2003
|
6 |
5-6 |
p. 409-412
4 p.
|
artikel
|
| 74 |
X-ray excited spectroscopy of defects and impurities in compound semiconductors
|
Takeda, Y.
|
|
2003
|
6 |
5-6 |
p. 267-271
5 p.
|
artikel
|
| 75 |
Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism
|
Zhao, J.H.
|
|
2003
|
6 |
5-6 |
p. 507-509
3 p.
|
artikel
|
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