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                             17 results found
no title author magazine year volume issue page(s) type
1 Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio Zhang, Xin
 2016
 55 C p. 79-84
6 p.
 article
2 Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates Neplokh, Vladimir
 2016
 55 C p. 72-78
7 p.
 article
3 Electronic and optical properties of InN nanowires Mengistu, H.T.
 2016
 55 C p. 85-89
5 p.
 article
4 GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes Chern, Kevin T.
 2016
 55 C p. 2-6
5 p.
 article
5 Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces Koukoula, T.
 2016
 55 C p. 46-50
5 p.
 article
6 Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth Alloing, Blandine
 2016
 55 C p. 51-58
8 p.
 article
7 Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter Bengoechea-Encabo, A.
 2016
 55 C p. 59-62
4 p.
 article
8 Phonon–plasmon coupling in Si doped GaN nanowires Rozas-Jiménez, E.
 2016
 55 C p. 63-66
4 p.
 article
9 Preface Cavalcoli, Daniela
 2016
 55 C p. 1-
1 p.
 article
10 Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells Alamé, Sabine
 2016
 55 C p. 7-11
5 p.
 article
11 Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures Mutta, Geeta Rani
 2016
 55 C p. 12-18
7 p.
 article
12 Reprint of: Electron channelling contrast imaging for III-nitride thin film structures Naresh-Kumar, G.
 2016
 55 C p. 19-25
7 p.
 article
13 Reprint of: GaN nanowires on diamond Hetzl, Martin
 2016
 55 C p. 32-45
14 p.
 article
14 Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field Budagosky, J.A.
 2016
 55 C p. 90-94
5 p.
 article
15 Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity Brubaker, Matt D.
 2016
 55 C p. 67-71
5 p.
 article
16 Surface properties of AlInGaN/GaN heterostructure Minj, A.
 2016
 55 C p. 26-31
6 p.
 article
17 Ultraviolet light emitting diodes using III-N quantum dots Brault, Julien
 2016
 55 C p. 95-101
7 p.
 article
                             17 results found
 
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