| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio
|
Zhang, Xin
|
|
2016
|
55 |
C |
p. 79-84
6 p.
|
artikel
|
| 2 |
Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates
|
Neplokh, Vladimir
|
|
2016
|
55 |
C |
p. 72-78
7 p.
|
artikel
|
| 3 |
Electronic and optical properties of InN nanowires
|
Mengistu, H.T.
|
|
2016
|
55 |
C |
p. 85-89
5 p.
|
artikel
|
| 4 |
GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes
|
Chern, Kevin T.
|
|
2016
|
55 |
C |
p. 2-6
5 p.
|
artikel
|
| 5 |
Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfaces
|
Koukoula, T.
|
|
2016
|
55 |
C |
p. 46-50
5 p.
|
artikel
|
| 6 |
Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
|
Alloing, Blandine
|
|
2016
|
55 |
C |
p. 51-58
8 p.
|
artikel
|
| 7 |
Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
|
Bengoechea-Encabo, A.
|
|
2016
|
55 |
C |
p. 59-62
4 p.
|
artikel
|
| 8 |
Phonon–plasmon coupling in Si doped GaN nanowires
|
Rozas-Jiménez, E.
|
|
2016
|
55 |
C |
p. 63-66
4 p.
|
artikel
|
| 9 |
Preface
|
Cavalcoli, Daniela
|
|
2016
|
55 |
C |
p. 1-
1 p.
|
artikel
|
| 10 |
Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells
|
Alamé, Sabine
|
|
2016
|
55 |
C |
p. 7-11
5 p.
|
artikel
|
| 11 |
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures
|
Mutta, Geeta Rani
|
|
2016
|
55 |
C |
p. 12-18
7 p.
|
artikel
|
| 12 |
Reprint of: Electron channelling contrast imaging for III-nitride thin film structures
|
Naresh-Kumar, G.
|
|
2016
|
55 |
C |
p. 19-25
7 p.
|
artikel
|
| 13 |
Reprint of: GaN nanowires on diamond
|
Hetzl, Martin
|
|
2016
|
55 |
C |
p. 32-45
14 p.
|
artikel
|
| 14 |
Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
|
Budagosky, J.A.
|
|
2016
|
55 |
C |
p. 90-94
5 p.
|
artikel
|
| 15 |
Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity
|
Brubaker, Matt D.
|
|
2016
|
55 |
C |
p. 67-71
5 p.
|
artikel
|
| 16 |
Surface properties of AlInGaN/GaN heterostructure
|
Minj, A.
|
|
2016
|
55 |
C |
p. 26-31
6 p.
|
artikel
|
| 17 |
Ultraviolet light emitting diodes using III-N quantum dots
|
Brault, Julien
|
|
2016
|
55 |
C |
p. 95-101
7 p.
|
artikel
|
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