| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields
|
Kakimoto, Koichi
|
|
2002
|
5 |
4-5 |
p. 341-345
5 p.
|
artikel
|
| 2 |
Analysis of localized vibration of nitrogen complexes in CZ silicon
|
Okubo, I
|
|
2002
|
5 |
4-5 |
p. 397-401
5 p.
|
artikel
|
| 3 |
Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth
|
Tomzig, Erich
|
|
2002
|
5 |
4-5 |
p. 347-351
5 p.
|
artikel
|
| 4 |
A roadmap towards cost efficient 300mm equipment
|
Pfitzner, Lothar
|
|
2002
|
5 |
4-5 |
p. 321-331
11 p.
|
artikel
|
| 5 |
Defect requirements for advanced 300mm DRAM substrates
|
Kupfer, C
|
|
2002
|
5 |
4-5 |
p. 381-386
6 p.
|
artikel
|
| 6 |
Dislocation behavior in heavily germanium-doped silicon crystal
|
Taishi, Toshinori
|
|
2002
|
5 |
4-5 |
p. 409-412
4 p.
|
artikel
|
| 7 |
Doubleside polishing—a technology mandatory for 300mm wafer manufacturing
|
Wenski, G
|
|
2002
|
5 |
4-5 |
p. 375-380
6 p.
|
artikel
|
| 8 |
Effect of vacancies on nucleation of oxide precipitates in silicon
|
Voronkov, V.V.
|
|
2002
|
5 |
4-5 |
p. 387-390
4 p.
|
artikel
|
| 9 |
E-MRS Spring Meeting 2002. The 300mm Silicon Era: Material, Equipment, Technology
|
Richter, H.
|
|
2002
|
5 |
4-5 |
p. 311-
1 p.
|
artikel
|
| 10 |
From overall equipment efficiency (OEE) to overall Fab effectiveness (OFE)
|
Oechsner, Richard
|
|
2002
|
5 |
4-5 |
p. 333-339
7 p.
|
artikel
|
| 11 |
Future roadblocks and solutions in silicon technology as outlined by the ITRS roadmap
|
Arden, Wolfgang
|
|
2002
|
5 |
4-5 |
p. 313-319
7 p.
|
artikel
|
| 12 |
IFC-ED board
|
|
|
2002
|
5 |
4-5 |
p. IFC-
1 p.
|
artikel
|
| 13 |
Impact of filtering on nanotopography measurement of 300mm silicon wafers
|
Riedel, F
|
|
2002
|
5 |
4-5 |
p. 465-472
8 p.
|
artikel
|
| 14 |
Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications
|
Lee, Y.J.
|
|
2002
|
5 |
4-5 |
p. 419-423
5 p.
|
artikel
|
| 15 |
Mechanical properties of nitrogen-doped CZ silicon crystals
|
Orlov, V
|
|
2002
|
5 |
4-5 |
p. 403-407
5 p.
|
artikel
|
| 16 |
New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding
|
Dragoi, V.
|
|
2002
|
5 |
4-5 |
p. 425-428
4 p.
|
artikel
|
| 17 |
On the impact of nanotopography of silicon wafers on post-CMP oxide layers
|
Schmolke, R
|
|
2002
|
5 |
4-5 |
p. 413-418
6 p.
|
artikel
|
| 18 |
Oxide precipitates in annealed nitrogen-doped 300mm CZ-SI
|
Akhmetov, V.D.
|
|
2002
|
5 |
4-5 |
p. 391-396
6 p.
|
artikel
|
| 19 |
Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing
|
Geiler, H.D
|
|
2002
|
5 |
4-5 |
p. 445-455
11 p.
|
artikel
|
| 20 |
Physical failure analysis in semiconductor industry—challenges of the copper interconnect process
|
Zschech, Ehrenfried
|
|
2002
|
5 |
4-5 |
p. 457-464
8 p.
|
artikel
|
| 21 |
Praseodymium oxide growth on Si(100) by pulsed-laser deposition
|
Wolfframm, D.
|
|
2002
|
5 |
4-5 |
p. 429-434
6 p.
|
artikel
|
| 22 |
Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection
|
Kalaev, V.V.
|
|
2002
|
5 |
4-5 |
p. 369-373
5 p.
|
artikel
|
| 23 |
Silicon melt convection in large size Czochralski crucibles
|
Virbulis, J.
|
|
2002
|
5 |
4-5 |
p. 353-359
7 p.
|
artikel
|
| 24 |
Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal
|
Krause, M
|
|
2002
|
5 |
4-5 |
p. 361-367
7 p.
|
artikel
|
| 25 |
X-ray characterization of crystal perfection and surface contamination in large-diameter silicon wafers
|
Kawado, Seiji
|
|
2002
|
5 |
4-5 |
p. 435-444
10 p.
|
artikel
|
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