| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 0.4dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device
|
Hamaizia, Z.
|
|
2011
|
14 |
2 |
p. 89-93
5 p.
|
artikel
|
| 2 |
Characteristics of GZO thin films deposited by sol–gel dip coating
|
Kalaivanan, A.
|
|
2011
|
14 |
2 |
p. 94-96
3 p.
|
artikel
|
| 3 |
Characterization of Al x In y Ga1−x−y N quaternary alloys grown on sapphire substrates by molecular-beam epitaxy
|
Abid, M.A.
|
|
2011
|
14 |
2 |
p. 164-169
6 p.
|
artikel
|
| 4 |
Effect of AlN buffer thickness on GaN epilayer grown on Si(111)
|
Wei, Meng
|
|
2011
|
14 |
2 |
p. 97-100
4 p.
|
artikel
|
| 5 |
Effect of post-deposition annealing temperature on CeO2 thin film deposited on silicon substrate via RF magnetron sputtering technique
|
Kiet Chuah, Soo
|
|
2011
|
14 |
2 |
p. 101-107
7 p.
|
artikel
|
| 6 |
Enhanced photocatalytic and antibacterial activities of sol–gel synthesized ZnO and Ag-ZnO
|
Karunakaran, C.
|
|
2011
|
14 |
2 |
p. 133-138
6 p.
|
artikel
|
| 7 |
Growth and characterization of Tl3InSe4 single crystals
|
Qasrawi, A.F.
|
|
2011
|
14 |
2 |
p. 175-178
4 p.
|
artikel
|
| 8 |
Growth and characterization of ZnO nanowires grown on the Si(111) and Si(100) substrates: Optical properties and biaxial stress of nanowires
|
Yousefi, Ramin
|
|
2011
|
14 |
2 |
p. 170-174
5 p.
|
artikel
|
| 9 |
Indium doped zinc oxide thin films deposited by ultrasonic spray pyrolysis technique: Effect of the substrate temperature on the physical properties
|
Castañeda, L.
|
|
2011
|
14 |
2 |
p. 114-119
6 p.
|
artikel
|
| 10 |
Investigation of the optical and structural properties of thermally evaporated cadmium sulphide thin films on polyethylene terephthalate substrate
|
Faraj, M.G.
|
|
2011
|
14 |
2 |
p. 146-150
5 p.
|
artikel
|
| 11 |
Microstructural and photoluminescence properties of Co-doped ZnO films fabricated using a simple solution growth method
|
Elilarassi, R.
|
|
2011
|
14 |
2 |
p. 179-183
5 p.
|
artikel
|
| 12 |
One-step, solid-state reaction to ZnO nanoparticles in the presence of ionic liquid
|
Li, Kangfeng
|
|
2011
|
14 |
2 |
p. 184-187
4 p.
|
artikel
|
| 13 |
Optical properties of Si0.8Ge0.2/Si multiple quantum wells
|
Shim, K.H.
|
|
2011
|
14 |
2 |
p. 128-132
5 p.
|
artikel
|
| 14 |
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
|
Jin, Lan
|
|
2011
|
14 |
2 |
p. 108-113
6 p.
|
artikel
|
| 15 |
PbS/CoS–Pani composite semiconductor films
|
Heera, T.R.
|
|
2011
|
14 |
2 |
p. 151-156
6 p.
|
artikel
|
| 16 |
Preparation and characterization of new window material CdS thin films at low substrate temperature (<300K) with vacuum deposition
|
Tomakin, M.
|
|
2011
|
14 |
2 |
p. 120-127
8 p.
|
artikel
|
| 17 |
Tailoring the surface morphology of TiO2 nanotube arrays connected with nanowires by anodization
|
Xue, Chaorui
|
|
2011
|
14 |
2 |
p. 157-163
7 p.
|
artikel
|
| 18 |
Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer
|
Tunç, Tuncay
|
|
2011
|
14 |
2 |
p. 139-145
7 p.
|
artikel
|
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