| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absence of nonradiative recombination centers in modulation-doped quantum wells revealed by two-wavelength excited photoluminescence
|
Hoshino, K
|
|
|
7 |
3-4 |
p. 563-566
|
artikel
|
| 2 |
Antiferromagnetic phase transition in a single MnTe monolayer
|
Prechtl, G.
|
|
|
7 |
3-4 |
p. 1006-1010
|
artikel
|
| 3 |
A physical explanation for the origin of self-similar magnetoconductance fluctuations in semiconductor billiards
|
Tench, C.R
|
|
|
7 |
3-4 |
p. 726-730
|
artikel
|
| 4 |
A super coupling of radiation field and excitons confined in spatially periodic structure
|
Ishihara, Hajime
|
|
|
7 |
3-4 |
p. 671-675
|
artikel
|
| 5 |
A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density
|
Zhang, B.Y
|
|
|
7 |
3-4 |
p. 851-854
|
artikel
|
| 6 |
Beat structure in spectrally resolved four-wave mixing under crosslinear polarization in GaAs quantum wells
|
Suryadi,
|
|
|
7 |
3-4 |
p. 572-575
|
artikel
|
| 7 |
Biexcitons and charged excitons in quantum dots: a quantum Monte Carlo study
|
Tsuchiya, Takuma
|
|
|
7 |
3-4 |
p. 470-474
|
artikel
|
| 8 |
Carrier capture and intra-dot Auger relaxation in quantum dots
|
Ferreira, R
|
|
|
7 |
3-4 |
p. 342-345
|
artikel
|
| 9 |
Carrier emission processes in InAs quantum dots
|
Kapteyn, C.M.A
|
|
|
7 |
3-4 |
p. 388-392
|
artikel
|
| 10 |
Carrier hopping in InAs/Al y Ga1−y As quantum dot heterostructures: effects on optical and laser properties
|
Polimeni, A
|
|
|
7 |
3-4 |
p. 452-455
|
artikel
|
| 11 |
Characterization of sublattice-reversed GaAs by reflection high energy electron diffraction and transmission electron microscopy
|
Koh, S
|
|
|
7 |
3-4 |
p. 876-880
|
artikel
|
| 12 |
Characterization of ZnSe/ZnMgBeSe single quantum wells
|
Chang, J.H
|
|
|
7 |
3-4 |
p. 576-580
|
artikel
|
| 13 |
Coherent response of a semiconductor microcavity in the strong coupling regime
|
Cassabois, G
|
|
|
7 |
3-4 |
p. 631-635
|
artikel
|
| 14 |
Collective excitations and inelastic Coulomb scattering rate of coupled Q1D electron gases in semiconductor quantum wires
|
Hai, Guo-Qiang
|
|
|
7 |
3-4 |
p. 541-544
|
artikel
|
| 15 |
Confinement effects in strain-induced InGaAs/GaAs quantum dots
|
Ren, Hong-Wen
|
|
|
7 |
3-4 |
p. 403-407
|
artikel
|
| 16 |
Controlling the polarization state of confined photon modes in photonic wires by a magnetic field
|
Tikhodeev, S.G.
|
|
|
7 |
3-4 |
p. 666-670
|
artikel
|
| 17 |
Designing of silicon effective quantum dots by using the oxidation-induced strain: a theoretical approach
|
Shiraishi, Kenji
|
|
|
7 |
3-4 |
p. 337-341
|
artikel
|
| 18 |
Detection of single FIR-photon absorption using quantum dots
|
Komiyama, S
|
|
|
7 |
3-4 |
p. 698-703
|
artikel
|
| 19 |
Determination of the band structure of photonic crystal waveguides
|
Culshaw, I.S
|
|
|
7 |
3-4 |
p. 650-655
|
artikel
|
| 20 |
Direct evidence for quantum contact resistance effects in V-groove quantum wires
|
Kaufman, D
|
|
|
7 |
3-4 |
p. 756-759
|
artikel
|
| 21 |
Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope
|
Matsuda, K
|
|
|
7 |
3-4 |
p. 377-382
|
artikel
|
| 22 |
Dispersive and localized one-dimensional plasmons in very narrow quantum wires
|
Perez, Florent
|
|
|
7 |
3-4 |
p. 521-525
|
artikel
|
| 23 |
Drift and diffusion dynamics of optically spin-polarized electrons in GaAs quantum wires
|
Sogawa, T.
|
|
|
7 |
3-4 |
p. 1020-1024
|
artikel
|
| 24 |
Dynamic process of two-dimensional InAs growth in Stranski–Krastanov mode
|
Kita, T
|
|
|
7 |
3-4 |
p. 891-895
|
artikel
|
| 25 |
ECR-MBE growth and patterning of GaInNAs/GaAs quantum wells for 1st order DFB lasers
|
Reinhardt, M.
|
|
|
7 |
3-4 |
p. 919-923
|
artikel
|
| 26 |
Effects of electric field on photoluminescence spectra in InGaN ultraviolet light-emitting diodes
|
Kudo, Hiromitsu
|
|
|
7 |
3-4 |
p. 949-952
|
artikel
|
| 27 |
Effects of electron–hole correlation in quantum dots under high magnetic field (up to 45 T)
|
Cingolani, R
|
|
|
7 |
3-4 |
p. 346-349
|
artikel
|
| 28 |
Effects of the spontaneous polarization and piezoelectric fields on the luminescence spectra of GaN/Al0.15Ga0.85N quantum wells
|
Traetta, G
|
|
|
7 |
3-4 |
p. 929-933
|
artikel
|
| 29 |
Eigenstate symmetry probed by biexciton transitions in a single quantum dot
|
Weigand, R
|
|
|
7 |
3-4 |
p. 350-353
|
artikel
|
| 30 |
Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-I superlattice
|
Ohtani, N
|
|
|
7 |
3-4 |
p. 586-589
|
artikel
|
| 31 |
Electron and hole storage in self-assembled InAs quantum dots
|
Heinrich, D
|
|
|
7 |
3-4 |
p. 484-488
|
artikel
|
| 32 |
Electron–electron interaction effects in integer quantum-Hall photoluminescence
|
Asano, Kenichi
|
|
|
7 |
3-4 |
p. 604-607
|
artikel
|
| 33 |
Electronic characteristics of InAs self-assembled quantum dots
|
Wang, H.L
|
|
|
7 |
3-4 |
p. 383-387
|
artikel
|
| 34 |
Electronic characterization of InSb quantum wells
|
Chung, S.J.
|
|
|
7 |
3-4 |
p. 809-813
|
artikel
|
| 35 |
Electronic transport in quasi-1D mesoscopic systems: the correlated electron approach
|
Destefani, C.F.
|
|
|
7 |
3-4 |
p. 786-789
|
artikel
|
| 36 |
Electron mobility on AlGaN/GaN heterostructure interface
|
Zhao, G.Y
|
|
|
7 |
3-4 |
p. 963-966
|
artikel
|
| 37 |
Electron transport in modulation-doped GaAs v-groove quantum wires
|
Schwarz, A
|
|
|
7 |
3-4 |
p. 760-765
|
artikel
|
| 38 |
Enhancement of nonlinear optical response of exciton–polaritons by controlling thickness of GaAs layer
|
Akiyama, Koich
|
|
|
7 |
3-4 |
p. 661-665
|
artikel
|
| 39 |
Enhancement of the Coulomb correlations in type-II quantum dots
|
Lelong, Ph.
|
|
|
7 |
3-4 |
p. 393-397
|
artikel
|
| 40 |
Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure
|
Hu, Can-Ming
|
|
|
7 |
3-4 |
p. 795-798
|
artikel
|
| 41 |
Exchange coupling for excitons in quantum wires
|
Larousserie, D.
|
|
|
7 |
3-4 |
p. 531-535
|
artikel
|
| 42 |
Exciton dynamics in ZnCdSe/ZnSe ridge quantum wires
|
Heiss, W
|
|
|
7 |
3-4 |
p. 526-530
|
artikel
|
| 43 |
Exciton lifetime in quantum well with vicinal high-density excitons
|
Hirasawa, M
|
|
|
7 |
3-4 |
p. 600-603
|
artikel
|
| 44 |
Experimental evidence of delocalization in correlated disorder superlattices
|
Bellani, V.
|
|
|
7 |
3-4 |
p. 823-826
|
artikel
|
| 45 |
Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE
|
Tsujikawa, Tomoko
|
|
|
7 |
3-4 |
p. 308-316
|
artikel
|
| 46 |
Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot
|
Jung, S.K
|
|
|
7 |
3-4 |
p. 430-434
|
artikel
|
| 47 |
Femtosecond pump and probe measurement of all-optical modulation based on intersubband transition in n-doped quantum wells
|
Asano, T.
|
|
|
7 |
3-4 |
p. 704-708
|
artikel
|
| 48 |
Fermi-edge singularities in the photoluminescence spectrum of modulation-doped GaAs v-groove quantum wires
|
Kim, J
|
|
|
7 |
3-4 |
p. 517-520
|
artikel
|
| 49 |
Ferromagnetism induced by free carriers in p-type structures of diluted magnetic semiconductors
|
Dietl, T
|
|
|
7 |
3-4 |
p. 967-975
|
artikel
|
| 50 |
Few-cycle THz spectroscopy of nanostructures
|
Unterrainer, K.
|
|
|
7 |
3-4 |
p. 693-697
|
artikel
|
| 51 |
Fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots: Zeeman-interaction and exchange energy enhancement
|
Bayer, M
|
|
|
7 |
3-4 |
p. 475-478
|
artikel
|
| 52 |
First room temperature lasing from the fundamental state of V-grooved quantum wire lasers
|
Kim, T.G.
|
|
|
7 |
3-4 |
p. 508-512
|
artikel
|
| 53 |
Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates
|
Fujikura, Hajime
|
|
|
7 |
3-4 |
p. 864-869
|
artikel
|
| 54 |
GaAs nanocrystals fabricated by sequential ion implantation: structural and luminescence properties
|
Kanemitsu, Y
|
|
|
7 |
3-4 |
p. 322-325
|
artikel
|
| 55 |
Gaussian semiconductor superlattices
|
Diez, E
|
|
|
7 |
3-4 |
p. 832-835
|
artikel
|
| 56 |
Growth of cubic III-nitride semiconductors for electronics and optoelectronics application
|
Yoshida, S
|
|
|
7 |
3-4 |
p. 907-914
|
artikel
|
| 57 |
High-finesse mid infrared microcavities based on lead salts
|
Schwarzl, T
|
|
|
7 |
3-4 |
p. 636-640
|
artikel
|
| 58 |
High photo and electroluminescence efficiency oligothiophenes
|
Gigli, G
|
|
|
7 |
3-4 |
p. 612-615
|
artikel
|
| 59 |
High-resolution patterning and characterization of optically pumped first-order GaN DFB lasers
|
Werner, R
|
|
|
7 |
3-4 |
p. 915-918
|
artikel
|
| 60 |
Hole burning spectroscopy of InAs self-assembled quantum dots for memory application
|
Sugiyama, Yoshihiro
|
|
|
7 |
3-4 |
p. 503-507
|
artikel
|
| 61 |
Hybrid excitons in organic–inorganic semiconducting quantum wells in a microcavity
|
Abassi, H.
|
|
|
7 |
3-4 |
p. 686-692
|
artikel
|
| 62 |
InAs dots including Mn atoms fabricated by MOMBE
|
Zhou, Y.K
|
|
|
7 |
3-4 |
p. 1001-1005
|
artikel
|
| 63 |
InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics
|
Mowbray, D.J.
|
|
|
7 |
3-4 |
p. 489-493
|
artikel
|
| 64 |
Index
|
|
|
|
7 |
3-4 |
p. 1025-1042
|
artikel
|
| 65 |
Index
|
|
|
|
7 |
3-4 |
p. 1043-1047
|
artikel
|
| 66 |
Individual scatterers as microscopic origin of equilibration between spin-polarized edge channels in the quantum Hall regime
|
Heinzel, T
|
|
|
7 |
3-4 |
p. 804-808
|
artikel
|
| 67 |
Inelastic tunneling in a double quantum dot coupled to a bosonic environment
|
Fujisawa, Toshimasa
|
|
|
7 |
3-4 |
p. 413-419
|
artikel
|
| 68 |
Influence of cavity de-tuning in semiconductor microcavity LEDs
|
Pratt, A.R
|
|
|
7 |
3-4 |
p. 656-660
|
artikel
|
| 69 |
Influence of the shallow impurity environment on the luminescence of single-quantum dots
|
Hartmann, Arno
|
|
|
7 |
3-4 |
p. 461-465
|
artikel
|
| 70 |
In-plane and perpendicular tunneling through InAs quantum dots
|
Schmidt, K.H
|
|
|
7 |
3-4 |
p. 425-429
|
artikel
|
| 71 |
Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition
|
Nakasaki, Ryuusuke
|
|
|
7 |
3-4 |
p. 953-957
|
artikel
|
| 72 |
Interplay of disorder and tunneling in coupled quantum well structures – tuning the intersubband line shape by an electric field
|
Metzner, C
|
|
|
7 |
3-4 |
p. 722-725
|
artikel
|
| 73 |
Intersubband and interminiband GaAs/AlGaAs quantum cascade lasers at 10 μm
|
Strasser, G.
|
|
|
7 |
3-4 |
p. 709-712
|
artikel
|
| 74 |
Investigation of the mesoscopic Aharonov–Bohm effect in low magnetic fields
|
Hansen, A.E
|
|
|
7 |
3-4 |
p. 776-780
|
artikel
|
| 75 |
Large and anisotropic zero-field spin-splittings in In x Ga1−x As/In y Al1−yAs (x,y>0.6) heterojunctions
|
Yamada, S
|
|
|
7 |
3-4 |
p. 992-996
|
artikel
|
| 76 |
Large positive magnetoresistance in periodically modulated two-dimensional electron gas formed on self-organized GaAs multiatomic steps
|
Akabori, Masashi
|
|
|
7 |
3-4 |
p. 766-771
|
artikel
|
| 77 |
Lasing via ground-subband transitions in V-groove quantum wire lasers
|
Sirigu, L.
|
|
|
7 |
3-4 |
p. 513-516
|
artikel
|
| 78 |
Lateral current confinement in selectively grown resonant tunneling transistor with an embedded gate
|
Gustafson, B
|
|
|
7 |
3-4 |
p. 819-822
|
artikel
|
| 79 |
Linear and non-linear behavior of cavity polaritons
|
Houdré, R
|
|
|
7 |
3-4 |
p. 625-630
|
artikel
|
| 80 |
Local breakdown of the quantum hall effect and the correlated cyclotron emission
|
Kawano, Y
|
|
|
7 |
3-4 |
p. 799-803
|
artikel
|
| 81 |
Long-period time-dependent luminescence in reactive ion-etched GaN
|
Brown, S.A
|
|
|
7 |
3-4 |
p. 958-962
|
artikel
|
| 82 |
Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses
|
Nakano, H
|
|
|
7 |
3-4 |
p. 555-558
|
artikel
|
| 83 |
Magneto-photoluminescence study of InGaAs quantum dots fabricated by droplet epitaxy
|
Mano, T
|
|
|
7 |
3-4 |
p. 448-451
|
artikel
|
| 84 |
Magneto-transport in corrugated quantum wires
|
Lin, L.-H.
|
|
|
7 |
3-4 |
p. 750-755
|
artikel
|
| 85 |
Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field
|
Omiya, T
|
|
|
7 |
3-4 |
p. 976-980
|
artikel
|
| 86 |
Mid-infrared spectroscopic studies and lasing in GaAs–AlGaAs quantum cascade devices
|
Wilson, L.R
|
|
|
7 |
3-4 |
p. 713-717
|
artikel
|
| 87 |
Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field
|
Schomburg, E
|
|
|
7 |
3-4 |
p. 814-818
|
artikel
|
| 88 |
Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells
|
Adachi, T
|
|
|
7 |
3-4 |
p. 1015-1019
|
artikel
|
| 89 |
MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature
|
Tachibana, K
|
|
|
7 |
3-4 |
p. 944-948
|
artikel
|
| 90 |
Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots
|
Lee, S.-W
|
|
|
7 |
3-4 |
p. 499-502
|
artikel
|
| 91 |
Modulation of the electronic properties of GaAs quantum wells induced by surface acoustic waves
|
Santos, Paulo V
|
|
|
7 |
3-4 |
p. 559-562
|
artikel
|
| 92 |
Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb
|
Abe, E
|
|
|
7 |
3-4 |
p. 981-985
|
artikel
|
| 93 |
Multi-band simulation of quantum transport in resonant interband tunneling devices
|
Ogawa, Matsuto
|
|
|
7 |
3-4 |
p. 840-845
|
artikel
|
| 94 |
Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot
|
Findeis, F.
|
|
|
7 |
3-4 |
p. 354-358
|
artikel
|
| 95 |
Nearly perfect 3D ordering in IV–VI quantum dot superlattices with ABCABC... vertical stacking sequence
|
Springholz, G.
|
|
|
7 |
3-4 |
p. 870-875
|
artikel
|
| 96 |
Nonuniform energy level broadening in open quantum dots: the influence of the closed dot eigenstates on transport
|
Akis, R.
|
|
|
7 |
3-4 |
p. 745-749
|
artikel
|
| 97 |
Normal incidence Raman scattering enhancement in double-cavity microresonators
|
Jusserand, Bernard
|
|
|
7 |
3-4 |
p. 646-649
|
artikel
|
| 98 |
No spin polarization of carriers in InGaN
|
Tackeuchi, A
|
|
|
7 |
3-4 |
p. 1011-1014
|
artikel
|
| 99 |
Novel nano-scale site-controlled InAs quantum dot assisted by scanning tunneling microscope probe
|
Nakamura, Hitoshi
|
|
|
7 |
3-4 |
p. 331-336
|
artikel
|
| 100 |
Nucleation control in organic selective epitaxy by pulsed molecular beam technique
|
Cho, K.A
|
|
|
7 |
3-4 |
p. 887-890
|
artikel
|
| 101 |
Optical and structural characterization of a self-aligned single electron transitor structure by cathodoluminescence microscopy
|
Bertram, F
|
|
|
7 |
3-4 |
p. 363-366
|
artikel
|
| 102 |
Optical control of the mobility of a MODFET with a layer of self-assembled quantum dots
|
Shields, A.J
|
|
|
7 |
3-4 |
p. 479-483
|
artikel
|
| 103 |
Optical properties of arrays of Si nanopillars on the (100) surface of crystalline Si
|
Poborchii, Vladimir V
|
|
|
7 |
3-4 |
p. 545-549
|
artikel
|
| 104 |
Optical properties of asymmetric photonic crystals
|
Fujita, T.
|
|
|
7 |
3-4 |
p. 681-685
|
artikel
|
| 105 |
Optical properties of InAs quantum dots in a Si matrix
|
Heitz, R
|
|
|
7 |
3-4 |
p. 317-321
|
artikel
|
| 106 |
Optical spectroscopic study of electric field sharing effects in piezoelectric GaN/Al0.65Ga0.35N multi-quantum well structures
|
Hogg, R.A.
|
|
|
7 |
3-4 |
p. 924-928
|
artikel
|
| 107 |
Oscillator strength of type-II light-hole exciton in In x Ga1−x As/GaAs strained single quantum wells
|
Nakayama, M
|
|
|
7 |
3-4 |
p. 567-571
|
artikel
|
| 108 |
Phonon-assisted polar exciton–transitions in self-organized InAs/GaAs quantum dots
|
Heitz, R
|
|
|
7 |
3-4 |
p. 398-402
|
artikel
|
| 109 |
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment
|
Fry, P.W
|
|
|
7 |
3-4 |
p. 408-412
|
artikel
|
| 110 |
Photoluminescence from two-dimensional electron gas in modulation-doped Al x Ga1−x N/GaN heterostructures
|
Shen, B
|
|
|
7 |
3-4 |
p. 939-943
|
artikel
|
| 111 |
Photoluminescence inner core excitation in semiconductor quantum structures
|
Kobayashi, Keisuke
|
|
|
7 |
3-4 |
p. 595-599
|
artikel
|
| 112 |
Pressure-induced modulation of the confinement in self-organized quantum dots produced and detected by a near-field optical probe
|
Chavez-Pirson, A
|
|
|
7 |
3-4 |
p. 367-372
|
artikel
|
| 113 |
p-type Ge channel modulation doped heterostructures with very high room-temperature mobilities
|
Ueno, Tetsuji
|
|
|
7 |
3-4 |
p. 790-794
|
artikel
|
| 114 |
Quantized conductance in extended electron waveguides fabricated on shallow etched modulation-doped GaAs/AlGaAs heterostructures
|
Beuscher, F
|
|
|
7 |
3-4 |
p. 772-775
|
artikel
|
| 115 |
Quantum chaotic electron transport in superlattices
|
Bujkiewicz, S
|
|
|
7 |
3-4 |
p. 827-831
|
artikel
|
| 116 |
Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors
|
Maximov, M.V
|
|
|
7 |
3-4 |
p. 326-330
|
artikel
|
| 117 |
Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states induced by Ga-FIB implantation
|
Kim, H
|
|
|
7 |
3-4 |
p. 435-439
|
artikel
|
| 118 |
Resonant Rayleigh scattering mediated by 2D cavity polaritons
|
Freixanet, T.
|
|
|
7 |
3-4 |
p. 676-680
|
artikel
|
| 119 |
Role of dynamic depolarization for the intersubband resonance in the localization regime
|
Metzner, C
|
|
|
7 |
3-4 |
p. 718-721
|
artikel
|
| 120 |
Room temperature I–V characteristics of Si/Si 1−x Ge x/Si interband tunneling diodes
|
Duschl, R.
|
|
|
7 |
3-4 |
p. 836-839
|
artikel
|
| 121 |
Selecting wave function states in open quantum dots
|
Akis, R
|
|
|
7 |
3-4 |
p. 740-744
|
artikel
|
| 122 |
Self-assembled InGaAs dots grown on GaP (001) substrate by low-pressure organometallic vapor phase epitaxy
|
Fuchi, S
|
|
|
7 |
3-4 |
p. 855-859
|
artikel
|
| 123 |
Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
|
Brunner, K
|
|
|
7 |
3-4 |
p. 881-886
|
artikel
|
| 124 |
Semi-classical orbits in a caterpillar like Sinaı̈ billiard
|
Pouydebasque, A
|
|
|
7 |
3-4 |
p. 731-734
|
artikel
|
| 125 |
Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope
|
Heinzel, T.M
|
|
|
7 |
3-4 |
p. 860-863
|
artikel
|
| 126 |
Semiconductor photonic molecules
|
Forchel, A
|
|
|
7 |
3-4 |
p. 616-624
|
artikel
|
| 127 |
Shallow acceptors in Ge/GeSi multi-quantum well heterostructures
|
Aleshkin, V.Ya.
|
|
|
7 |
3-4 |
p. 608-611
|
artikel
|
| 128 |
Single electron charging of InAs quantum dots characterized by δ-doped channel conductivity
|
Yoh, Kanji
|
|
|
7 |
3-4 |
p. 440-443
|
artikel
|
| 129 |
Single-electron tunneling through Si nanocrystals dispersed in phosphosilicate glass thin films
|
Inoue, Y
|
|
|
7 |
3-4 |
p. 444-447
|
artikel
|
| 130 |
Spin transport properties in two-dimensional electron gas
|
Takahashi, Yutaka
|
|
|
7 |
3-4 |
p. 986-991
|
artikel
|
| 131 |
Splitting and storing excitons in strained coupled self-assembled quantum dots
|
Lundstrom, T.
|
|
|
7 |
3-4 |
p. 494-498
|
artikel
|
| 132 |
Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n11)B substrates
|
Lee, Jeong-Sik
|
|
|
7 |
3-4 |
p. 303-307
|
artikel
|
| 133 |
STM-photocurrent-spectroscopy on single self-assembled InGaAs quantum dots
|
Beham, E
|
|
|
7 |
3-4 |
p. 359-362
|
artikel
|
| 134 |
Strong Purcell effect for InAs quantum boxes in high-Q wet-etched microdisks
|
Gayral, B
|
|
|
7 |
3-4 |
p. 641-645
|
artikel
|
| 135 |
Surface potential measurement of self-assembled InAs dots by scanning Maxwell stress microscopy
|
Tanaka, Ichiro
|
|
|
7 |
3-4 |
p. 373-376
|
artikel
|
| 136 |
Temperature dependence of photoluminescence spectra in n-type modulation-doped quantum dot arrays
|
Nomura, Shintaro
|
|
|
7 |
3-4 |
p. 466-469
|
artikel
|
| 137 |
The effect of DC bias in a ballistic single mode AlGaAs/GaAs ring interferometer
|
Cassé, M
|
|
|
7 |
3-4 |
p. 781-785
|
artikel
|
| 138 |
Theoretical analysis of the optical spectra of In x Ga1−x N quantum dots in In y Ga1−yN layers
|
Hohenester, Ulrich
|
|
|
7 |
3-4 |
p. 934-938
|
artikel
|
| 139 |
Thermal dissociation of excitons in a type-I GaAs/AlAs superlattice studied by time-resolved photoluminescence measurements
|
Yamanaka, Miki
|
|
|
7 |
3-4 |
p. 581-585
|
artikel
|
| 140 |
The transition to chaos in a wide quantum well
|
Hayden, R.K
|
|
|
7 |
3-4 |
p. 735-739
|
artikel
|
| 141 |
The transport of 2D electrons through magnetic barriers
|
Kubrak, V
|
|
|
7 |
3-4 |
p. 997-1000
|
artikel
|
| 142 |
Time-resolved magneto-optical properties of In x Ga 1−x As V-shaped single quantum wires
|
Lomascolo, M.
|
|
|
7 |
3-4 |
p. 536-540
|
artikel
|
| 143 |
Toward nano-metal buried structure in InP – 20 nm wire and InP buried growth of tungsten
|
Arai, T
|
|
|
7 |
3-4 |
p. 896-901
|
artikel
|
| 144 |
Transport of coupled double quantum dots in series
|
Fujita, Naoki
|
|
|
7 |
3-4 |
p. 420-424
|
artikel
|
| 145 |
Tunneling competition of photoexcited carriers in a system of monolithically integrated dual multiple InGaAs/AlGaAs and GaAs/AlGaAs quantum wells
|
Kawasaki, K
|
|
|
7 |
3-4 |
p. 590-594
|
artikel
|
| 146 |
Type II band alignment and exciton wave functions in Si/Si1−x Ge x quantum wells
|
Penn, C
|
|
|
7 |
3-4 |
p. 550-554
|
artikel
|
| 147 |
Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates
|
Jiang, C
|
|
|
7 |
3-4 |
p. 902-906
|
artikel
|
| 148 |
Vertical transport and large negative differential resistance of epitaxial GaAs/ErAs/GaAs buried semimetal/semiconductor heterostructures
|
Tanaka, M
|
|
|
7 |
3-4 |
p. 846-850
|
artikel
|
| 149 |
Visible luminescence from Si/SiO2 quantum wells and dots: confinement and localization of excitons
|
Kanemitsu, Y
|
|
|
7 |
3-4 |
p. 456-460
|
artikel
|
Tijdschrift beschrijving