| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio-based approach to structural modulation on 4H-SiC(112¯0) during MBE growth
|
Ito, Tomonori
|
|
2010
|
42 |
10 |
p. 2788-2791
4 p.
|
artikel
|
| 2 |
Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate
|
Ishimure, Naoki
|
|
2010
|
42 |
10 |
p. 2731-2734
4 p.
|
artikel
|
| 3 |
A hierarchical research by large-scale and ab initio electronic structure theories—Si and Ge cleavage and stepped ( 1 1 1 ) − 2 × 1 surfaces
|
Hoshi, T.
|
|
2010
|
42 |
10 |
p. 2784-2787
4 p.
|
artikel
|
| 4 |
Anti-Stokes and Stokes photoluminescence in non-uniform GaAs-based quantum wells
|
Fujiwara, K.
|
|
2010
|
42 |
10 |
p. 2658-2660
3 p.
|
artikel
|
| 5 |
A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs
|
Marquardt, Bastian
|
|
2010
|
42 |
10 |
p. 2598-2601
4 p.
|
artikel
|
| 6 |
Band structures of Bernal graphene modulated by electric fields
|
Tsai, Sing-Jyun
|
|
2010
|
42 |
10 |
p. 2796-2798
3 p.
|
artikel
|
| 7 |
Characteristics of exciton polaritons in a ZnO microcavity
|
Kawase, Toshiki
|
|
2010
|
42 |
10 |
p. 2567-2570
4 p.
|
artikel
|
| 8 |
Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgap
|
Shirane, M.
|
|
2010
|
42 |
10 |
p. 2563-2566
4 p.
|
artikel
|
| 9 |
Charge transport through chains of nanoparticles
|
Lüdtke, T.
|
|
2010
|
42 |
10 |
p. 2830-2833
4 p.
|
artikel
|
| 10 |
Coherent spin precession of electrons and excitons in charge tunable InP quantum dots
|
Masumoto, Yasuaki
|
|
2010
|
42 |
10 |
p. 2493-2496
4 p.
|
artikel
|
| 11 |
Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasers
|
Mátyás, Alpár
|
|
2010
|
42 |
10 |
p. 2628-2631
4 p.
|
artikel
|
| 12 |
Controllable Dresselhaus field in microscopically inversion-symmetric quantum wells
|
Murata, Masahiko
|
|
2010
|
42 |
10 |
p. 2711-2713
3 p.
|
artikel
|
| 13 |
Control of tunnel coupling strength between InAs quantum dots and nanogap metallic electrodes through In-Ga intermixing
|
Shibata, K.
|
|
2010
|
42 |
10 |
p. 2595-2597
3 p.
|
artikel
|
| 14 |
Coulomb blockade transport across lateral (Ga,Mn)As nanoconstrictions
|
Schlapps, Markus
|
|
2010
|
42 |
10 |
p. 2676-2680
5 p.
|
artikel
|
| 15 |
Design, fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substrates
|
Tanabe, Katsuaki
|
|
2010
|
42 |
10 |
p. 2560-2562
3 p.
|
artikel
|
| 16 |
Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy
|
Matsuzaka, S.
|
|
2010
|
42 |
10 |
p. 2702-2706
5 p.
|
artikel
|
| 17 |
Detection of stress distribution using Ca2MgSi2O7:Eu,Dy microparticles
|
Zhang, Hongwu
|
|
2010
|
42 |
10 |
p. 2872-2875
4 p.
|
artikel
|
| 18 |
Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt bright-field and dark-field TEM
|
Mishima, T.D.
|
|
2010
|
42 |
10 |
p. 2777-2780
4 p.
|
artikel
|
| 19 |
Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes
|
Polojärvi, V.
|
|
2010
|
42 |
10 |
p. 2610-2613
4 p.
|
artikel
|
| 20 |
Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy
|
Kitada, Takahiro
|
|
2010
|
42 |
10 |
p. 2540-2543
4 p.
|
artikel
|
| 21 |
Editorial Board
|
|
|
2010
|
42 |
10 |
p. IFC-
1 p.
|
artikel
|
| 22 |
Effect of interface structure on current spin-polarization in narrow gap semiconductor heterostructures
|
Souma, Satofumi
|
|
2010
|
42 |
10 |
p. 2718-2721
4 p.
|
artikel
|
| 23 |
Efficient injection-type ballistic rectification in Si/SiGe cross junctions
|
Salloch, D.
|
|
2010
|
42 |
10 |
p. 2618-2621
4 p.
|
artikel
|
| 24 |
Efficient photon detectors using surface acoustic waves
|
Jiao, Shujie
|
|
2010
|
42 |
10 |
p. 2857-2861
5 p.
|
artikel
|
| 25 |
Electrical characterization of multilayered SiC nano-particles for application as tunnel barrier engineered non-volatile memory
|
Lee, Dong Uk
|
|
2010
|
42 |
10 |
p. 2876-2879
4 p.
|
artikel
|
| 26 |
Electric-field-tunable electronic properties of graphene quantum dots
|
Chen, R.B.
|
|
2010
|
42 |
10 |
p. 2812-2815
4 p.
|
artikel
|
| 27 |
Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures
|
Granger, G.
|
|
2010
|
42 |
10 |
p. 2622-2627
6 p.
|
artikel
|
| 28 |
Energy bands of atomic monolayers of various materials: Possibility of energy gap engineering
|
Suzuki, Tatsuo
|
|
2010
|
42 |
10 |
p. 2820-2825
6 p.
|
artikel
|
| 29 |
Enhancement of optical gain in Li:CdZnO/ZnMgO quantum well lasers
|
Jeon, Hee Change
|
|
2010
|
42 |
10 |
p. 2652-2654
3 p.
|
artikel
|
| 30 |
Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab
|
Nakayama, Shigeru
|
|
2010
|
42 |
10 |
p. 2556-2559
4 p.
|
artikel
|
| 31 |
EP2DS18/MSS14 Joint International Conference, Kobe, Japan, July 19–24, 2009
|
|
|
2010
|
42 |
10 |
p. iv-
1 p.
|
artikel
|
| 32 |
Evidence for photon anti-bunching in acoustically pumped dots
|
Couto Jr., O.D.D.
|
|
2010
|
42 |
10 |
p. 2497-2500
4 p.
|
artikel
|
| 33 |
Exciton transport by moving strain dots in GaAs quantum wells
|
Lazić, S.
|
|
2010
|
42 |
10 |
p. 2640-2643
4 p.
|
artikel
|
| 34 |
Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum well
|
Kodera, Tetsuo
|
|
2010
|
42 |
10 |
p. 2592-2594
3 p.
|
artikel
|
| 35 |
Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation
|
Kim, B.-J.
|
|
2010
|
42 |
10 |
p. 2575-2578
4 p.
|
artikel
|
| 36 |
Fabrication of metal/quantum dot/semiconductor structure on silicon substrate
|
Yamamoto, Naokatsu
|
|
2010
|
42 |
10 |
p. 2739-2741
3 p.
|
artikel
|
| 37 |
First-order photon interference of a single photon from a single quantum dot
|
Ekuni, S.
|
|
2010
|
42 |
10 |
p. 2536-2539
4 p.
|
artikel
|
| 38 |
Formation of InAs quantum dots at ultrahigh growth rates
|
Akahane, Kouichi
|
|
2010
|
42 |
10 |
p. 2735-2738
4 p.
|
artikel
|
| 39 |
Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy
|
Umeno, K.
|
|
2010
|
42 |
10 |
p. 2772-2776
5 p.
|
artikel
|
| 40 |
Gate adjustable coherent three and four level mixing in a vertical quantum dot molecule
|
Payette, C.
|
|
2010
|
42 |
10 |
p. 2588-2591
4 p.
|
artikel
|
| 41 |
Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate
|
Yonezawa, Y.
|
|
2010
|
42 |
10 |
p. 2781-2783
3 p.
|
artikel
|
| 42 |
Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrate for silicon photonics
|
Bordel, Damien
|
|
2010
|
42 |
10 |
p. 2765-2767
3 p.
|
artikel
|
| 43 |
Growth of multi-stacked InAs/GaNAs quantum dots grown with As2 source in atomic hydrogen-assisted molecular beam epitaxy
|
Takata, Ayami
|
|
2010
|
42 |
10 |
p. 2745-2748
4 p.
|
artikel
|
| 44 |
Hot carrier solar cells: Principles, materials and design
|
König, D.
|
|
2010
|
42 |
10 |
p. 2862-2866
5 p.
|
artikel
|
| 45 |
Importance of electronic state of two-dimensional electron gas for electron injection process in nano-electronic devices
|
Muraguchi, M.
|
|
2010
|
42 |
10 |
p. 2602-2605
4 p.
|
artikel
|
| 46 |
InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell
|
Oshima, Ryuji
|
|
2010
|
42 |
10 |
p. 2757-2760
4 p.
|
artikel
|
| 47 |
Influence of the nitrogen content on the electrochemical capacitor characteristics of vertically aligned carbon nanotubes
|
Lee, Kuei-Yi
|
|
2010
|
42 |
10 |
p. 2799-2803
5 p.
|
artikel
|
| 48 |
In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts
|
Ciorga, M.
|
|
2010
|
42 |
10 |
p. 2673-2675
3 p.
|
artikel
|
| 49 |
Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode
|
Mehta, Minisha
|
|
2010
|
42 |
10 |
p. 2749-2752
4 p.
|
artikel
|
| 50 |
Large optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers
|
Morita, Ken
|
|
2010
|
42 |
10 |
p. 2505-2508
4 p.
|
artikel
|
| 51 |
Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film
|
Nishitani, Y.
|
|
2010
|
42 |
10 |
p. 2681-2684
4 p.
|
artikel
|
| 52 |
Magnetic control of Rashba splittings in symmetric InAs quantum wells
|
Matsuura, Toru
|
|
2010
|
42 |
10 |
p. 2707-2710
4 p.
|
artikel
|
| 53 |
Magnetic field dependence of exciton fine structures in InAs/GaAs quantum dots: Exchange vs. Zeeman splittings
|
Saito, T.
|
|
2010
|
42 |
10 |
p. 2532-2535
4 p.
|
artikel
|
| 54 |
Magnetoresistance oscillations in triple quantum wells under microwave irradiation
|
Wiedmann, S.
|
|
2010
|
42 |
10 |
p. 2614-2617
4 p.
|
artikel
|
| 55 |
Memory effect of pentacene field-effect transistors with embedded monolayer of semiconductor colloidal nano-dots
|
Kajimoto, Kaori
|
|
2010
|
42 |
10 |
p. 2816-2819
4 p.
|
artikel
|
| 56 |
Midinfrared photoluminescence from SnTe/PbTe/CdTe double quantum wells grown by molecular beam epitaxy
|
Koike, Kazuto
|
|
2010
|
42 |
10 |
p. 2636-2639
4 p.
|
artikel
|
| 57 |
Modulation spectroscopy on metamorphic InAs quantum dots
|
Lin, E.Y.
|
|
2010
|
42 |
10 |
p. 2544-2547
4 p.
|
artikel
|
| 58 |
Noise induced amplification of sub-threshold pulses in multi-thread excitable semiconductor ‘neurons’
|
Samardak, A.
|
|
2010
|
42 |
10 |
p. 2853-2856
4 p.
|
artikel
|
| 59 |
Observation of unique photon statistics of single artificial atom laser
|
Nomura, Masahiro
|
|
2010
|
42 |
10 |
p. 2489-2492
4 p.
|
artikel
|
| 60 |
One dimensional confinement of microcavity polaritons using non-piezoelectric surface acoustic waves
|
Cerda-Méndez, E.A.
|
|
2010
|
42 |
10 |
p. 2548-2551
4 p.
|
artikel
|
| 61 |
Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well
|
Takahashi, T.
|
|
2010
|
42 |
10 |
p. 2698-2701
4 p.
|
artikel
|
| 62 |
Optical manipulation of a single Mn spin in a CdTe quantum dot
|
Goryca, M.
|
|
2010
|
42 |
10 |
p. 2690-2693
4 p.
|
artikel
|
| 63 |
Optical properties of modulation-doped InGaAs vertically coupled quantum dots
|
Chuang, K.Y.
|
|
2010
|
42 |
10 |
p. 2514-2517
4 p.
|
artikel
|
| 64 |
Optical transitions in AlGaAs/GaAs quantum wires on GaAs(631) substrates studied by photoreflectance spectroscopy
|
Cruz-Hernández, E.
|
|
2010
|
42 |
10 |
p. 2571-2574
4 p.
|
artikel
|
| 65 |
Patterned growth of ZnO nanorods and enzyme immobilization toward the fabrication of glucose sensors
|
Ogata, K.
|
|
2010
|
42 |
10 |
p. 2880-2883
4 p.
|
artikel
|
| 66 |
Photoabsorption-enhanced dye-sensitized solar cell by using localized surface plasmon of silver nanoparticles modified with polymer
|
Ihara, Manabu
|
|
2010
|
42 |
10 |
p. 2867-2871
5 p.
|
artikel
|
| 67 |
Photoconductivity of Si/Ge/Si structures with 1.5 and 2ML of Ge layer
|
Shegai, O.A.
|
|
2010
|
42 |
10 |
p. 2518-2520
3 p.
|
artikel
|
| 68 |
Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices
|
Kido, R.
|
|
2010
|
42 |
10 |
p. 2655-2657
3 p.
|
artikel
|
| 69 |
Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A
|
Fukushima, T.
|
|
2010
|
42 |
10 |
p. 2529-2531
3 p.
|
artikel
|
| 70 |
Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation
|
Terai, Y.
|
|
2010
|
42 |
10 |
p. 2846-2848
3 p.
|
artikel
|
| 71 |
Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition
|
Terai, Y.
|
|
2010
|
42 |
10 |
p. 2834-2836
3 p.
|
artikel
|
| 72 |
Photoluminescence properties of exciton–exciton scattering in a GaAs/AlAs multiple quantum well
|
Nakayama, M.
|
|
2010
|
42 |
10 |
p. 2644-2647
4 p.
|
artikel
|
| 73 |
Physics of novel site controlled InGaAs quantum dots on (111) oriented substrates
|
Healy, S.B.
|
|
2010
|
42 |
10 |
p. 2761-2764
4 p.
|
artikel
|
| 74 |
Polarization conversion of excitonic photoluminescence under zero and nonzero magnetic fields in single InAlAs quantum dots
|
Kaji, R.
|
|
2010
|
42 |
10 |
p. 2501-2504
4 p.
|
artikel
|
| 75 |
Preface
|
Ohno, Hideo
|
|
2010
|
42 |
10 |
p. v-
1 p.
|
artikel
|
| 76 |
Proposal of a new physical model for Ohmic contacts
|
Takada, Y.
|
|
2010
|
42 |
10 |
p. 2837-2840
4 p.
|
artikel
|
| 77 |
Reducing influence of antiferromagnetic interactions on ferromagnetic properties of p-(Cd,Mn)Te quantum wells
|
Simserides, C.
|
|
2010
|
42 |
10 |
p. 2694-2697
4 p.
|
artikel
|
| 78 |
Refractive index of high-carrier-doped InGaAs/AlAsSb coupled double quantum wells
|
Gozu, Shin-ichiro
|
|
2010
|
42 |
10 |
p. 2661-2664
4 p.
|
artikel
|
| 79 |
Resonant photocurrent-spectroscopy of individual CdSe quantum dots
|
Panfilova, M.
|
|
2010
|
42 |
10 |
p. 2521-2523
3 p.
|
artikel
|
| 80 |
Resonant tunneling of electrons through single self-assembled InAs quantum dot studied by conductive atomic force microscopy
|
Tanaka, Ichiro
|
|
2010
|
42 |
10 |
p. 2606-2609
4 p.
|
artikel
|
| 81 |
Retardation-effect-induced plasmon modes in a silica-core gold-shell nanocylinder pair
|
Lu, J.Y.
|
|
2010
|
42 |
10 |
p. 2583-2587
5 p.
|
artikel
|
| 82 |
Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator
|
Piegdon, Karoline A.
|
|
2010
|
42 |
10 |
p. 2552-2555
4 p.
|
artikel
|
| 83 |
Simulation of the interplay between stimulated emission and carrier distribution in quantum-cascade lasers
|
Schrottke, L.
|
|
2010
|
42 |
10 |
p. 2632-2635
4 p.
|
artikel
|
| 84 |
Spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires
|
Masumoto, Yasuaki
|
|
2010
|
42 |
10 |
p. 2579-2582
4 p.
|
artikel
|
| 85 |
Spectroscopic analysis of electromigration at gold nanojunctions
|
Umeno, A.
|
|
2010
|
42 |
10 |
p. 2826-2829
4 p.
|
artikel
|
| 86 |
Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (111)Si substrate
|
Paek, J.H.
|
|
2010
|
42 |
10 |
p. 2722-2726
5 p.
|
artikel
|
| 87 |
Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method
|
Kumagai, N.
|
|
2010
|
42 |
10 |
p. 2753-2756
4 p.
|
artikel
|
| 88 |
Surface state control of III–V semiconductors using molecular modification
|
Yamada, Fumihiko
|
|
2010
|
42 |
10 |
p. 2841-2845
5 p.
|
artikel
|
| 89 |
Tailoring of the Wave Function Overlaps and the Carrier Lifetimes in InAs/GaAs1−x Sb x Type-II Quantum Dots
|
Hsu, Wei-Ting
|
|
2010
|
42 |
10 |
p. 2524-2528
5 p.
|
artikel
|
| 90 |
Temperature dependent single photon emission in InP/GaInP quantum dots
|
Nowak, A.K.
|
|
2010
|
42 |
10 |
p. 2509-2513
5 p.
|
artikel
|
| 91 |
Terahertz radiation by spontaneous polarization fields in InN
|
Lin, K.I.
|
|
2010
|
42 |
10 |
p. 2669-2672
4 p.
|
artikel
|
| 92 |
The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(311)B substrate
|
Shoji, Yasushi
|
|
2010
|
42 |
10 |
p. 2768-2771
4 p.
|
artikel
|
| 93 |
The modulation effects on Landau levels in graphene nanoribbon
|
Liu, Y.H.
|
|
2010
|
42 |
10 |
p. 2804-2807
4 p.
|
artikel
|
| 94 |
Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets
|
Yamashita, Tomoki
|
|
2010
|
42 |
10 |
p. 2727-2730
4 p.
|
artikel
|
| 95 |
Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
|
Kawazu, T.
|
|
2010
|
42 |
10 |
p. 2742-2744
3 p.
|
artikel
|
| 96 |
Thermal escape process of photogenerated carriers from GaAs single-quantum-well contained in GaAs/AlAs superlattices
|
Satake, A.
|
|
2010
|
42 |
10 |
p. 2665-2668
4 p.
|
artikel
|
| 97 |
14th International Conference on Modulated Semiconductor Structures
|
|
|
2010
|
42 |
10 |
p. iii-
1 p.
|
artikel
|
| 98 |
Transient grating studies of phase and spin relaxations of excitons in GaAs single quantum wells
|
Tomoda, K.
|
|
2010
|
42 |
10 |
p. 2714-2717
4 p.
|
artikel
|
| 99 |
Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide
|
Konishi, Keita
|
|
2010
|
42 |
10 |
p. 2792-2795
4 p.
|
artikel
|
| 100 |
Transport in armchair graphene nanoribbons modulated by magnetic barriers
|
Myoung, Nojoon
|
|
2010
|
42 |
10 |
p. 2808-2811
4 p.
|
artikel
|
| 101 |
Tunable coupling of mechanical vibration in GaAs micro-resonators
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