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                             158 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acoustically tunable photonic structures based on microcavity polaritons de Lima Jr., M.M.
2006
32 1-2 p. 496-499
4 p.
artikel
2 A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3μm based on ordering in InGaAsP Krämer, Stefan
2006
32 1-2 p. 554-557
4 p.
artikel
3 Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction Uemura, Tetsuya
2006
32 1-2 p. 383-386
4 p.
artikel
4 A piezoresistive cantilever integrating an InAs-based semiconductor–superconductor junction Okamoto, Hajime
2006
32 1-2 p. 512-515
4 p.
artikel
5 A small polaron hopping model for multiphonon-assisted transport along DNA molecules, in the presence of disorder Triberis, Georgios
2006
32 1-2 p. 592-595
4 p.
artikel
6 Atomic-scale structure and formation of self-assembled In(Ga)As quantum rings Offermans, P.
2006
32 1-2 p. 41-45
5 p.
artikel
7 Beyond the Rashba model Gvozdić, D.M.
2006
32 1-2 p. 458-461
4 p.
artikel
8 Buffer design for nitrogen polarity GaN on sapphire ( 0 0 0 1 ) by RF-MBE and application to the nanostructure formation using KOH etching Katayama, Ryuji
2006
32 1-2 p. 245-248
4 p.
artikel
9 Cancellation of fine-structure splitting in quantum dots by a magnetic field Stevenson, R.M.
2006
32 1-2 p. 135-138
4 p.
artikel
10 Carbon-doped high-mobility hole gases on (001) and (110) GaAs Gerl, C.
2006
32 1-2 p. 258-261
4 p.
artikel
11 Carrier capture and relaxation through a continuum background in InAs quantum dots Bogaart, E.W.
2006
32 1-2 p. 163-166
4 p.
artikel
12 Carrier dynamics and dispersive terahertz Bloch gain in semiconductor superlattices Hirakawa, K.
2006
32 1-2 p. 320-324
5 p.
artikel
13 Carrier dynamics in strain-induced InGaAsP/InP quantum dots Koskenvaara, H.
2006
32 1-2 p. 179-182
4 p.
artikel
14 Change in band configuration of In 0.57 Ga 0.43 As 1 - x Sb x / AlAs 0.48 Sb 0.52 quantum wells from type-II to type-I by increasing Sb composition x Gozu, Shin-ichiro
2006
32 1-2 p. 230-233
4 p.
artikel
15 Characterization of [ZnO] m [ZnMgO] n multiple quantum wells grown by molecular beam epitaxy Koike, Kazuto
2006
32 1-2 p. 191-194
4 p.
artikel
16 Charge pumping in driven electron ratchets Müller, Thorsten
2006
32 1-2 p. 528-531
4 p.
artikel
17 Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As) Teubert, J.
2006
32 1-2 p. 218-221
4 p.
artikel
18 Conference Organization 2006
32 1-2 p. viii-ix
nvt p.
artikel
19 Contactless electroreflectance studies of the band filling effect in Ga 1 - x Mn x As Lee, C.S.
2006
32 1-2 p. 387-390
4 p.
artikel
20 Contents page 2006
32 1-2 p. xi-xix
nvt p.
artikel
21 Controlling anisotropy of GaSb(As)/GaAs quantum dots by self-assembled molecular beam epitaxy Jiang, Chao
2006
32 1-2 p. 17-20
4 p.
artikel
22 Correlation between subband population and threshold current densities in GaAs/(Al,Ga)As quantum-cascade structures/lasers with different barrier heights Schrottke, L.
2006
32 1-2 p. 293-296
4 p.
artikel
23 Current–voltage characteristics in double-barrier resonant tunneling diodes with embedded GaAs quantum rings Noda, T.
2006
32 1-2 p. 550-553
4 p.
artikel
24 Deformation potentials and photo-response of strained PbSe quantum wells and quantum dots Simma, M.
2006
32 1-2 p. 123-126
4 p.
artikel
25 Dependence of photoluminescence of CdSe/ZnS on excitation wavelength Ozasa, Kazunari
2006
32 1-2 p. 89-92
4 p.
artikel
26 Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells Kotera, N.
2006
32 1-2 p. 199-202
4 p.
artikel
27 Dielectric screening for carbon nanotubes in a gating electric field Chen, S.C.
2006
32 1-2 p. 577-580
4 p.
artikel
28 Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dots Geller, M.
2006
32 1-2 p. 171-174
4 p.
artikel
29 Doping profile vs spin-resolved subband structure and spontaneous magnetization of selectively Mn-doped DMS narrow quantum wells Kim, Hye-Jung
2006
32 1-2 p. 403-406
4 p.
artikel
30 Dynamics of long-living excitons in tunable potential landscapes Gärtner, Andreas
2006
32 1-2 p. 195-198
4 p.
artikel
31 Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures Guzenko, V.A.
2006
32 1-2 p. 333-336
4 p.
artikel
32 Effect of inter-miniband tunneling on current resonances due to the formation of stochastic conduction networks in superlattices Hardwick, D.P.A.
2006
32 1-2 p. 285-288
4 p.
artikel
33 Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction Kohda, M.
2006
32 1-2 p. 438-441
4 p.
artikel
34 Effects of an elastic scatterer on the DC spin current generation in a Rashba-type quantum channel Wang, L.Y.
2006
32 1-2 p. 450-453
4 p.
artikel
35 Electrical spin injection from ZnMnSe into InGaAs-based quantum structures Löffler, W.
2006
32 1-2 p. 434-437
4 p.
artikel
36 Electronic and optical properties of InAs/InP self-assembled quantum dots on patterned substrates Sheng, Weidong
2006
32 1-2 p. 1-4
4 p.
artikel
37 Electronic excitations of double-walled armchair carbon nanotubes Ho, Y.H.
2006
32 1-2 p. 569-572
4 p.
artikel
38 Electronic properties of armchair carbon nanotube array Wu, S.J.
2006
32 1-2 p. 581-584
4 p.
artikel
39 Electron transport and shell structures of single InAs quantum dots probed by nanogap electrodes Jung, M.
2006
32 1-2 p. 187-190
4 p.
artikel
40 Emission properties of a single-emitter laser in photonic crystals Florescu, Lucia
2006
32 1-2 p. 488-491
4 p.
artikel
41 Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure Nam, H.D.
2006
32 1-2 p. 524-527
4 p.
artikel
42 Enhancement of spin polarization in asymmetrically coupled CdSe and CdZnMnSe quantum dots in ZnSe matrix Lee, S.
2006
32 1-2 p. 367-370
4 p.
artikel
43 Epitaxial Heusler alloy Fe 3 Si films on GaAs(001) substrates Herfort, J.
2006
32 1-2 p. 371-374
4 p.
artikel
44 Exchange-enhanced spin-splitting in a two-dimensional electron gas in the presence of the Rashba spin–orbit interaction Yang, C.H.
2006
32 1-2 p. 363-366
4 p.
artikel
45 Excitation transfer between extended band states and N-related localized states in GaP 1 - x N x with x up to 1% Niebling, T.
2006
32 1-2 p. 222-225
4 p.
artikel
46 Excitonic transitions in semiconductor concentric quantum double rings Kuroda, T.
2006
32 1-2 p. 46-48
3 p.
artikel
47 Ferromagnetic Ge(Mn) nanostructures Ahlers, S.
2006
32 1-2 p. 422-425
4 p.
artikel
48 Few-electron quantum dot fabricated with layered scanning force microscope lithography Sigrist, M.
2006
32 1-2 p. 5-8
4 p.
artikel
49 Few-electron spin and charge configurations in circular and rectangular vertical quantum dot mesas in a magnetic field: Experiment and full three-dimensional self-consistent simulations Austing, D.G.
2006
32 1-2 p. 395-398
4 p.
artikel
50 Fine structure splitting and biexciton binding energy in single self-assembled InAs/AlAs quantum dots Sarkar, D.
2006
32 1-2 p. 111-114
4 p.
artikel
51 Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots Pohl, U.W.
2006
32 1-2 p. 9-13
5 p.
artikel
52 Formation of ZnO nanodot arrays along the step edges on R-face sapphire by metalorganic chemical vapor deposition Kametani, Keisuke
2006
32 1-2 p. 33-36
4 p.
artikel
53 Gate bias controlled NDR in an in-plane-gate quantum dot transistor Son, S.H.
2006
32 1-2 p. 532-535
4 p.
artikel
54 Generation and manipulation of nonclassical light using photonic crystals Vuckovic, Jelena
2006
32 1-2 p. 466-470
5 p.
artikel
55 g -Factor tuning of 2D electrons in double-gated Si/SiGe quantum wells Gruber, D.
2006
32 1-2 p. 254-257
4 p.
artikel
56 Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates Wu, Kun-Ta
2006
32 1-2 p. 566-568
3 p.
artikel
57 Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots Maksimov, O.
2006
32 1-2 p. 399-402
4 p.
artikel
58 Hartree–Fock versus quantum Monte Carlo study of persistent current in a one-dimensional ring with single scatterer Vagner, Pavel
2006
32 1-2 p. 350-353
4 p.
artikel
59 Impurity cyclotron resonance in InGaAs/GaAs superlattice and InGaAs/AlAs superlattice grown on GaAs substrates Momose, H.
2006
32 1-2 p. 309-312
4 p.
artikel
60 Impurity effects in the optical absorption of quantum rings Dias da Silva, Luis G.G.V.
2006
32 1-2 p. 37-40
4 p.
artikel
61 Index of Authors and Papers 2006
32 1-2 p. 600-609
10 p.
artikel
62 Indistinguishable single photons from a single InAs quantum dot in a photonic crystal slab cavity Laurent, Stéphane
2006
32 1-2 p. 480-483
4 p.
artikel
63 Influence of a lateral electric field on the optical properties of InAs quantum dots Reuter, D.
2006
32 1-2 p. 73-76
4 p.
artikel
64 Influence of N cluster states on band dispersion in GaInNAs quantum wells Healy, S.B.
2006
32 1-2 p. 249-253
5 p.
artikel
65 Influence of polarization field on the lasing properties of III-nitride quantum wells Dialynas, G.E.
2006
32 1-2 p. 558-561
4 p.
artikel
66 Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a In x Ga 1 - x As / InP heterostructure Mendoza-Alvarez, J.G.
2006
32 1-2 p. 85-88
4 p.
artikel
67 In 0.75 Ga 0.25 As on GaAs submicron rings and their application for coherent nanoelectronic devices Carillo, Franco
2006
32 1-2 p. 53-56
4 p.
artikel
68 Interplay between polarization anisotropy and longitudinal spin relaxation in semiconductor quantum dots Favero, I.
2006
32 1-2 p. 426-429
4 p.
artikel
69 Inversion of the exciton fine structure splitting in quantum dots Young, R.J.
2006
32 1-2 p. 97-100
4 p.
artikel
70 Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavities Sęk, G.
2006
32 1-2 p. 471-475
5 p.
artikel
71 Landau levels in a novel two-dimensional electron system interacting with charged quantum dots Kawazu, Takuya
2006
32 1-2 p. 226-229
4 p.
artikel
72 List of Authors 2006
32 1-2 p. xxi-xxiv
nvt p.
artikel
73 Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers Oshima, Ryuji
2006
32 1-2 p. 77-80
4 p.
artikel
74 Loss and gain in Bloch oscillating super-superlattices: THz Stark ladder spectroscopy Robrish, Peter
2006
32 1-2 p. 325-328
4 p.
artikel
75 Low-energy electronic properties of multilayer graphite in an electric field Lu, C.L.
2006
32 1-2 p. 585-588
4 p.
artikel
76 Magnetooptical investigations of single self assembled In0.3Ga0.7As quantum dots Mensing, T.
2006
32 1-2 p. 131-134
4 p.
artikel
77 Magneto-optical single dot spectroscopy of GaSb/GaAs type II quantum dots Sato, Tomohiko
2006
32 1-2 p. 152-154
3 p.
artikel
78 Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity Alon-Braitbart, S.
2006
32 1-2 p. 127-130
4 p.
artikel
79 Magneto-oscillation of mid-gap photoluminescence in AlAs:Yb/GaAs superlattices Sato, Koichi
2006
32 1-2 p. 305-308
4 p.
artikel
80 Magnetotunneling spectroscopy of ring-shaped (InGa)As quantum dots: Evidence of excited states with 2pz character Walker, D.
2006
32 1-2 p. 57-60
4 p.
artikel
81 Mapping of the hole wave functions of self-assembled InAs-quantum dots by magneto-capacitance–voltage spectroscopy Kailuweit, P.
2006
32 1-2 p. 159-162
4 p.
artikel
82 Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wires Kim, Jin Woo
2006
32 1-2 p. 359-362
4 p.
artikel
83 1.5μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates Akahane, Kouichi
2006
32 1-2 p. 81-84
4 p.
artikel
84 Metal–insulator-transition studied by single-electron tunneling Könemann, Jens
2006
32 1-2 p. 215-217
3 p.
artikel
85 Microcavity THz quantum cascade laser Fasching, G.
2006
32 1-2 p. 316-319
4 p.
artikel
86 Micro-photoluminescence spectroscopy of hierarchically self-assembled quantum dots Rastelli, A.
2006
32 1-2 p. 29-32
4 p.
artikel
87 Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers Sawano, K.
2006
32 1-2 p. 520-523
4 p.
artikel
88 Modelling space-charge limited transport in discotic liquid crystals Lever, L.
2006
32 1-2 p. 596-599
4 p.
artikel
89 1.3μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (221)A InP substrates by molecular beam epitaxy Shimomura, S.
2006
32 1-2 p. 346-349
4 p.
artikel
90 Nature of the band gap of silicon and germanium nanowires Harris, Clive
2006
32 1-2 p. 341-345
5 p.
artikel
91 Nonlinear tuning of 3D photonic band-gap structures for single-photon on demand sources Florescu, Marian
2006
32 1-2 p. 484-487
4 p.
artikel
92 Nonlocal versus local rectification in multiply connected electron waveguide structures Knop, Michael
2006
32 1-2 p. 536-538
3 p.
artikel
93 [No title] Hu, Evelyn L.
2006
32 1-2 p. vii-
1 p.
artikel
94 Novel magneto-oscillatory behavior of confined electrons at a twin boundary in ZnSe and at an interface in GaAs/AlGaAs heterostructures Hattori, R.
2006
32 1-2 p. 237-240
4 p.
artikel
95 On the various impact of chemical composition and elastic strain in SiGe nanoscale islands to the diffuse X-ray scattering Hanke, M.
2006
32 1-2 p. 69-72
4 p.
artikel
96 Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources Song, J.D.
2006
32 1-2 p. 234-236
3 p.
artikel
97 Optical beam-induced current in planar two-dimensional n–p–n devices Werner, C.
2006
32 1-2 p. 508-511
4 p.
artikel
98 Optical characterisation of InAs/InP quantum dot photonic cavity membranes Frédérick, S.
2006
32 1-2 p. 504-507
4 p.
artikel
99 Optical communications waveband lasing from Sb-based quantum dot vertical-cavity laser Yamamoto, Naokatsu
2006
32 1-2 p. 516-519
4 p.
artikel
100 Optically detected cyclotron resonance in a high mobility 2D electron gas Moreau, S.
2006
32 1-2 p. 203-206
4 p.
artikel
101 Paramagnetism of interacting few-electron quantum dot with single magnetic impurity Cheng, Shun-Jen
2006
32 1-2 p. 407-411
5 p.
artikel
102 Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors Wang, Z.
2006
32 1-2 p. 562-565
4 p.
artikel
103 Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures Hakkarainen, T.
2006
32 1-2 p. 266-269
4 p.
artikel
104 Photoreflectance study of InAs quantum dots on GaAs(n 11) substrates Rojas-Ramírez, J.S.
2006
32 1-2 p. 139-143
5 p.
artikel
105 Polarisation control and emission enhancement of a quantum dot in ultra-high finesse microcavity pillars Timpson, J.A.
2006
32 1-2 p. 500-503
4 p.
artikel
106 Polaritonic polarization effects in a semiconductor microcavity Sanvitto, D.
2006
32 1-2 p. 492-495
4 p.
artikel
107 Positive magnetoresistance in the variable range hopping regime in CdSe El kaaouachi, Abdelhamid
2006
32 1-2 p. 419-421
3 p.
artikel
108 Possible generation of electric multipole radiation from solid state quantum rings Kondo, Naoki
2006
32 1-2 p. 49-52
4 p.
artikel
109 Probing high quality pentacene monolayers by optical methods He, Rui
2006
32 1-2 p. 589-591
3 p.
artikel
110 Proceedings of the 12th International Conference on Modulated Semiconductor Structures 2006
32 1-2 p. v-
1 p.
artikel
111 Propagation and scattering of light in opal heterojunctions Romanov, Sergei G.
2006
32 1-2 p. 476-479
4 p.
artikel
112 Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors Haugan, H.J.
2006
32 1-2 p. 289-292
4 p.
artikel
113 Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junction Poenariu, S.A.
2006
32 1-2 p. 539-542
4 p.
artikel
114 Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots Nakaoka, T.
2006
32 1-2 p. 148-151
4 p.
artikel
115 Quantum-dot size dependence of exciton fine-structure splitting Seguin, R.
2006
32 1-2 p. 101-103
3 p.
artikel
116 Quantum Monte Carlo simulation of exciton–exciton scattering in a GaAs/AlGaAs quantum well Shumway, J.
2006
32 1-2 p. 273-276
4 p.
artikel
117 Radiative coupling of intersubband transitions in GaAs/AlGaAs multiple quantum wells Shih, T.
2006
32 1-2 p. 262-265
4 p.
artikel
118 Raman properties of silicon nanoparticles Meier, Cedrik
2006
32 1-2 p. 155-158
4 p.
artikel
119 Rashba interaction as an external Yang–Mills field applied to one-dimensional system Liu, Chao-xing
2006
32 1-2 p. 391-394
4 p.
artikel
120 Redistribution of photogenerated carriers in neutral and charged InAs quantum dot systems Torii, Kousuke
2006
32 1-2 p. 175-178
4 p.
artikel
121 Relaxation dynamics of ferromagnetic domains in (Cd,Mn)Te quantum wells Kossacki, P.
2006
32 1-2 p. 454-457
4 p.
artikel
122 Resonant Raman scattering by N-related local modes in AlGaAs/InGaAsN multiquantum wells Lazić, S.
2006
32 1-2 p. 277-280
4 p.
artikel
123 Resonant tunneling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution function Mityagin, Yury A.
2006
32 1-2 p. 297-300
4 p.
artikel
124 Resonator fabrication for cavity enhanced, tunable Si/Ge quantum cascade detectors Grydlik, M.
2006
32 1-2 p. 313-315
3 p.
artikel
125 Scanning a metallic tip close to a quantum point contact Pioda, A.
2006
32 1-2 p. 167-170
4 p.
artikel
126 Self-aligned doping profiles in nanoscale silicon structures Ahopelto, Jouni
2006
32 1-2 p. 547-549
3 p.
artikel
127 Simulations of germanium epitaxial growth on the silicon (100) surface incorporating intermixing Akis, R.
2006
32 1-2 p. 207-210
4 p.
artikel
128 Single InAs/GaAs quantum dots: Photocurrent and cross-sectional AFM analysis Fasching, G.
2006
32 1-2 p. 183-186
4 p.
artikel
129 Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates Atkinson, P.
2006
32 1-2 p. 21-24
4 p.
artikel
130 Spectroscopic ellipsometry of layer by layer deposited colloidal HgTe nanocrystals exhibiting quantum confinement Rinnerbauer, Veronika
2006
32 1-2 p. 104-107
4 p.
artikel
131 Spin and negative differential conductance in the transport through a quantum dot in a magnetic field Rogge, M.C.
2006
32 1-2 p. 442-445
4 p.
artikel
132 Spin configurations in strained magnetic EuSe / PbSe 1 - x Te x superlattices grown by molecular beam epitaxy Lechner, R.T.
2006
32 1-2 p. 379-382
4 p.
artikel
133 Spin injection and accumulation in inhomogeneous semiconductors Csontos, Dan
2006
32 1-2 p. 412-415
4 p.
artikel
134 Spin-polarization induced by Rashba spin–orbit coupling in three-terminal devices Yamamoto, M.
2006
32 1-2 p. 462-465
4 p.
artikel
135 Spin polarized tunneling in III–V-based heterostructures with a ferromagnetic MnAs thin film and GaAs:MnAs nanoclusters Hai, Pham Nam
2006
32 1-2 p. 416-418
3 p.
artikel
136 Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots Tackeuchi, A.
2006
32 1-2 p. 354-358
5 p.
artikel
137 Spin transport and manipulation by mobile potential dots in GaAs quantum wells Stotz, J.A.H.
2006
32 1-2 p. 446-449
4 p.
artikel
138 Strong Fermi-edge singularity in ultra-high-quality AlGaAs/GaAs quantum wires Wang, X.-L.
2006
32 1-2 p. 329-332
4 p.
artikel
139 Structural and optical analysis of size-controlled InAs quantum dashes Kümmell, T.
2006
32 1-2 p. 108-110
3 p.
artikel
140 Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication Song, J.D.
2006
32 1-2 p. 115-118
4 p.
artikel
141 Structure of InAs/GaAs quantum dots grown with Sb surfactant Timm, R.
2006
32 1-2 p. 25-28
4 p.
artikel
142 Studies of electro-optical properties and band alignment of InGaPN/GaAs heterostructures by photoreflectance and photoluminescence Lin, K.I.
2006
32 1-2 p. 211-214
4 p.
artikel
143 Subject Index 2006
32 1-2 p. 610-612
3 p.
artikel
144 TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence Schardt, M.
2006
32 1-2 p. 241-244
4 p.
artikel
145 Temperature-dependent conductance of quasi-one-dimensional electrons in a novel constricted In 0.1 Ga 0.9 As / GaAs channel with corrugated interfaces Akiyama, Y.
2006
32 1-2 p. 337-340
4 p.
artikel
146 Temperature-dependent electronic excitations in a 2D graphite layer Ho, J.H.
2006
32 1-2 p. 573-576
4 p.
artikel
147 Temperature-dependent photoluminescence of vertically stacked self-assembled CdSe quantum dots in ZnSe Liu, X.
2006
32 1-2 p. 65-68
4 p.
artikel
148 Theoretical predictions of the electronic and optical properties of single and coupled (In,Ga)As/GaAs quantum dots Narvaez, Gustavo A.
2006
32 1-2 p. 93-96
4 p.
artikel
149 The Tersoff potential for phonons in GaAs Powell, Dave
2006
32 1-2 p. 270-272
3 p.
artikel
150 Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures Sankowski, P.
2006
32 1-2 p. 375-378
4 p.
artikel
151 Transition metal-doped quantum dots: Optical detection and manipulation of spin states Bhattacharjee, A.K.
2006
32 1-2 p. 430-433
4 p.
artikel
152 Transport in a shunted surface superlattice with a perpendicular magnetic field Feil, T.
2006
32 1-2 p. 301-304
4 p.
artikel
153 Triggered single-photon emission and cross-correlation properties in InAlAs quantum dot Kumano, Hidekazu
2006
32 1-2 p. 144-147
4 p.
artikel
154 Tuning the cross-gap transition energy of a quantum dot by uniaxial stress Seidl, S.
2006
32 1-2 p. 14-16
3 p.
artikel
155 Two-photon-absorption-assisted Tera Hertz optical gain modulation in quantum-dot optical amplifiers Ju, H.
2006
32 1-2 p. 543-546
4 p.
artikel
156 Two-photon absorption from single InGaN/GaN quantum dots Jarjour, Anas F.
2006
32 1-2 p. 119-122
4 p.
artikel
157 Two sub-band conductivity of Si quantum well Prunnila, Mika
2006
32 1-2 p. 281-284
4 p.
artikel
158 Voltage-controlled linewidth of excitonic transitions in a single self-assembled quantum dot Kroner, M.
2006
32 1-2 p. 61-64
4 p.
artikel
                             158 gevonden resultaten
 
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