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                             107 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AC-hopping conductance of self-organized Ge/Si quantum dot arrays Drichko, I.L.
2005
26 1-4 p. 450-454
5 p.
artikel
2 Acoustically induced dynamic potential dots Stotz, J.A.H.
2005
26 1-4 p. 67-71
5 p.
artikel
3 Acoustic vibrations of embedded spherical nanoparticles Murray, Daniel B.
2005
26 1-4 p. 417-421
5 p.
artikel
4 A direct measurement of g-factors in II–VI and III–V core–shell nanocrystals Fradkin, L.
2005
26 1-4 p. 9-13
5 p.
artikel
5 A method for continuous monitoring of quantum tunneling in a molecular double dot Smirnov, Anatoly Yu.
2005
26 1-4 p. 297-301
5 p.
artikel
6 Anisotropy of the electron energy levels in In x Ga1− x As/GaAs quantum dots with non uniform composition Migliorato, M.A.
2005
26 1-4 p. 436-440
5 p.
artikel
7 Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots Oulton, R.
2005
26 1-4 p. 302-307
6 p.
artikel
8 Auxiliary field quantum Monte-Carlo simulation of interacting electrons in quantum dots Maksym, P.A.
2005
26 1-4 p. 257-261
5 p.
artikel
9 Ballistic transport in InSb mesoscopic structures Goel, N.
2005
26 1-4 p. 455-459
5 p.
artikel
10 Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier Jung, S.I.
2005
26 1-4 p. 100-104
5 p.
artikel
11 Biexcitons in artificial molecules with in-plane magnetic field Bellucci, Devis
2005
26 1-4 p. 308-311
4 p.
artikel
12 Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer–Weber and Stranski–Krastanow growth modes Lee, M.-E.
2005
26 1-4 p. 422-426
5 p.
artikel
13 Characterization of deformed quantum dots by modeling single-electron-tunneling experiments Räsänen, E.
2005
26 1-4 p. 477-481
5 p.
artikel
14 Charged magneto-exciton states in semiconductor quantum dots Warburton, R.J.
2005
26 1-4 p. 45-50
6 p.
artikel
15 Charge qubits and limitations of electrostatic quantum gates Weichselbaum, A.
2005
26 1-4 p. 342-346
5 p.
artikel
16 Coherent dynamics in InGaAs quantum dots and quantum dot molecules Langbein, W.
2005
26 1-4 p. 400-407
8 p.
artikel
17 Conference Information 2005
26 1-4 p. ix-
1 p.
artikel
18 Conference Photo 2005
26 1-4 p. vi-
1 p.
artikel
19 Contents 2005
26 1-4 p. xi-xvii
nvt p.
artikel
20 Controlled positioning of self-assembled InAs quantum dots on (110) GaAs Schuh, D.
2005
26 1-4 p. 72-76
5 p.
artikel
21 Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD Sakuma, Y.
2005
26 1-4 p. 81-85
5 p.
artikel
22 Correlated photon emission from semiconductor quantum dots grown in inverted pyramids Malko, A.
2005
26 1-4 p. 194-198
5 p.
artikel
23 Damping of coherent oscillations in a quantum dot photodiode Villas-Bôas, J.M.
2005
26 1-4 p. 337-341
5 p.
artikel
24 Diagonalizations on a correlated basis Siljamäki, S.
2005
26 1-4 p. 441-445
5 p.
artikel
25 Dimensional effects and magnetic field influence on excitons in coupled quantum dots and coupled quantum wells Kaputkina, N.E.
2005
26 1-4 p. 291-296
6 p.
artikel
26 Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices Song, J.D.
2005
26 1-4 p. 86-90
5 p.
artikel
27 Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots Zibik, E.A.
2005
26 1-4 p. 105-109
5 p.
artikel
28 Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots Kim, J.S.
2005
26 1-4 p. 91-95
5 p.
artikel
29 Electrical characteristics of a metal–insulator–semiconductor memory structure containing Ge nanocrystals Heng, C.L.
2005
26 1-4 p. 386-390
5 p.
artikel
30 Electrical properties of metal-oxide semiconductor nano-particle device Kim, J.H.
2005
26 1-4 p. 432-435
4 p.
artikel
31 Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system Schmidt, R.
2005
26 1-4 p. 110-114
5 p.
artikel
32 Electronic structure of the p-shell in single, site-selected InAs/InP quantum dots Chithrani, D.
2005
26 1-4 p. 322-326
5 p.
artikel
33 Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step Liu, H.Y.
2005
26 1-4 p. 129-132
4 p.
artikel
34 Environment-dependent blinking of single semiconductor nanocrystals and statistical aging of ensembles Verberk, R.
2005
26 1-4 p. 19-23
5 p.
artikel
35 Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer Cho, E.T.
2005
26 1-4 p. 276-280
5 p.
artikel
36 Exact broken-symmetry states and Hartree–Fock solutions for quantum dots at high magnetic fields Szafran, B.
2005
26 1-4 p. 252-256
5 p.
artikel
37 Excited states and multi-exciton complexes in single CdTe quantum dots Kheng, K.
2005
26 1-4 p. 262-266
5 p.
artikel
38 Exciton-polaron in a CdSe quantum dot under an applied magnetic field Sellami, K.
2005
26 1-4 p. 143-148
6 p.
artikel
39 Experimental demonstration of coherent coupling of two quantum dots Ortner, Gerhard
2005
26 1-4 p. 281-285
5 p.
artikel
40 External cavity quantum dot tunable laser through 1.55μm Allen, C.Nì.
2005
26 1-4 p. 372-376
5 p.
artikel
41 Fabrication and characterization of a PbTe quantum dots multilayer structure Rodriguez, E.
2005
26 1-4 p. 361-365
5 p.
artikel
42 Fabrication of ZnO nanocrystals dispersed in glass films for low-temperature optical studies Yamamoto, Aishi
2005
26 1-4 p. 96-99
4 p.
artikel
43 Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy Timm, R.
2005
26 1-4 p. 231-235
5 p.
artikel
44 Formation of InAs quantum dots and wetting layers in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy Offermans, P.
2005
26 1-4 p. 236-240
5 p.
artikel
45 Giant optical anisotropy in single InAs quantum dots Favero, I.
2005
26 1-4 p. 51-54
4 p.
artikel
46 High-efficiency single-photon sources based on InAs/GaAs quantum dots in pillar microcavities Bennett, A.J.
2005
26 1-4 p. 391-394
4 p.
artikel
47 Highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3μm by metalorganic chemical vapor deposition Yang, Tao
2005
26 1-4 p. 77-80
4 p.
artikel
48 Importance of electron–electron interactions and Zeeman splitting in single-wall carbon nanotube quantum dots Moriyama, S.
2005
26 1-4 p. 473-476
4 p.
artikel
49 InAs/AlAs quantum dots with InGaAs insertion layer: dependence of the indium composition and the thickness Park, S.K.
2005
26 1-4 p. 138-142
5 p.
artikel
50 Index of Authors and Papers 2005
26 1-4 p. 487-496
10 p.
artikel
51 Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers Migliorato, M.A.
2005
26 1-4 p. 124-128
5 p.
artikel
52 Influence of strain on the Stark effect in InP/GaInP quantum discs Leoni, Peter
2005
26 1-4 p. 312-316
5 p.
artikel
53 Influence of the quantum dot shape on the determination of the electronic structure and electron decoherence Santos Jr., D.R.
2005
26 1-4 p. 331-336
6 p.
artikel
54 Infrared and Raman spectroscopies of InP/II–VI core-shell nanoparticles Manciu, F.S.
2005
26 1-4 p. 14-18
5 p.
artikel
55 Interacting electrons in artificial molecules with magnetic field of arbitrary direction Bellucci, Devis
2005
26 1-4 p. 327-330
4 p.
artikel
56 Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities Kress, A.
2005
26 1-4 p. 351-355
5 p.
artikel
57 Isospin blockade in transport through vertical double quantum dots Wunsch, Bernhard
2005
26 1-4 p. 464-468
5 p.
artikel
58 Journal title page 2005
26 1-4 p. iii-
1 p.
artikel
59 Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers Sellers, I.R.
2005
26 1-4 p. 382-385
4 p.
artikel
60 Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy Choi, W.J.
2005
26 1-4 p. 366-371
6 p.
artikel
61 Magnetic field dependence of hole levels in InAs quantum dots Reuter, D.
2005
26 1-4 p. 446-449
4 p.
artikel
62 Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well Lee, S.
2005
26 1-4 p. 271-275
5 p.
artikel
63 Microscopic approach to many-exciton complexes in self-assembled InGaAs/GaAs quantum dots Sheng, Weidong
2005
26 1-4 p. 267-270
4 p.
artikel
64 Multiband k · p calculation of exciton diamagnetic shift in InP/InGaP self-assembled quantum dots Tadić, M.
2005
26 1-4 p. 212-216
5 p.
artikel
65 Negative Coulomb drag in coupled wire and quantum dot system Shimizu, Masafumi
2005
26 1-4 p. 460-463
4 p.
artikel
66 New method to induce 2D–3D transition of strained CdSe/ZnSe layers Robin, I.C.
2005
26 1-4 p. 119-123
5 p.
artikel
67 Observation of biexcitonic quantum beat in strain-induced GaAs quantum dots Ikezawa, Michio
2005
26 1-4 p. 149-152
4 p.
artikel
68 Optical characterization of quantum dots entrained in microstructured optical fibers Meissner, Kenith E.
2005
26 1-4 p. 377-381
5 p.
artikel
69 Optically detected resonance spectroscopy of interface fluctuation quantum dots Meining, C.J.
2005
26 1-4 p. 158-162
5 p.
artikel
70 Optically induced mechanical interaction between semiconductor quantum dots under an electronic resonance condition Iida, Takuya
2005
26 1-4 p. 163-168
6 p.
artikel
71 Optical properties of Stranski–Krastanov grown three-dimensional Si/Si1− x Ge x nanostructures Kamenev, B.V.
2005
26 1-4 p. 174-179
6 p.
artikel
72 Optical spectroscopy of CdTe/ZnTe quantum-dot superlattices Onishchenko, E.E.
2005
26 1-4 p. 153-157
5 p.
artikel
73 Photoluminescence of tetrahedral quantum-dot quantum wells Fonoberov, V.A.
2005
26 1-4 p. 63-66
4 p.
artikel
74 Photoluminescence properties of impurity-doped ZnS nanocrystals fabricated by sequential ion implantation Ishizumi, A.
2005
26 1-4 p. 24-27
4 p.
artikel
75 Polarization spectroscopy of positive and negative trions in an InAs quantum dot Ware, Morgan E.
2005
26 1-4 p. 55-58
4 p.
artikel
76 Preface 2005
26 1-4 p. vii-viii
nvt p.
artikel
77 Proceedings of the International Conference on Quantum Dots 2005
26 1-4 p. v-
1 p.
artikel
78 Pump–probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots Boucaud, P.
2005
26 1-4 p. 59-62
4 p.
artikel
79 Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy Choi, W.J.
2005
26 1-4 p. 115-118
4 p.
artikel
80 Resonant tunneling through edge states bounded around an antidot Arai, K.
2005
26 1-4 p. 469-472
4 p.
artikel
81 Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra Jiang, Chao
2005
26 1-4 p. 180-184
5 p.
artikel
82 Selective growth of GaInN quantum dot structures Perez-Solorzano, V.
2005
26 1-4 p. 133-137
5 p.
artikel
83 Single-dot spectroscopy in high magnetic fields Babinski, Adam
2005
26 1-4 p. 190-193
4 p.
artikel
84 Single InAs/InP quantum dot spectroscopy in 1.3–1.55μm telecommunication band Takemoto, Kazuya
2005
26 1-4 p. 185-189
5 p.
artikel
85 Single-photon detection mechanism in a quantum dot transistor Beattie, N.S.
2005
26 1-4 p. 356-360
5 p.
artikel
86 Singlet–triplet oscillations and far-infrared spectrum of four-minima quantum-dot molecule Marlo-Helle, M.
2005
26 1-4 p. 286-290
5 p.
artikel
87 Spin effects in a quantum ring Ihn, T.
2005
26 1-4 p. 225-230
6 p.
artikel
88 Spin–spin interaction in magnetic semiconductor quantum dots Bacher, G.
2005
26 1-4 p. 37-44
8 p.
artikel
89 Stable biexcitonic lasing of CuCl quantum dots under two-photon resonant excitation Oohata, G.
2005
26 1-4 p. 347-350
4 p.
artikel
90 STEM-study of 1.3μm InAs/InGaAs quantum dot structures Kümmell, T.
2005
26 1-4 p. 241-244
4 p.
artikel
91 Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0– 6 nm Saito, T.
2005
26 1-4 p. 217-221
5 p.
artikel
92 Strain effects on optical properties of pyramidal InAs/GaAs quantum dots Kuo, M.K.
2005
26 1-4 p. 199-202
4 p.
artikel
93 Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures Gutiérrez, M.
2005
26 1-4 p. 245-251
7 p.
artikel
94 Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer Akahane, Kouichi
2005
26 1-4 p. 395-399
5 p.
artikel
95 Study of correlation effects on stability of many-body complexes in III–V nitride quantum dots Turki-Ben Ali, Y.
2005
26 1-4 p. 222-224
3 p.
artikel
96 Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence Garayt, J.P.
2005
26 1-4 p. 203-206
4 p.
artikel
97 Subject Index 2005
26 1-4 p. 497-499
3 p.
artikel
98 Suppression of acoustic-phonon-induced electron transitions in coupled quantum dots Bertoni, A.
2005
26 1-4 p. 427-431
5 p.
artikel
99 The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD Park, Kwangmin
2005
26 1-4 p. 169-173
5 p.
artikel
100 The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots Zibik, E.A.
2005
26 1-4 p. 408-412
5 p.
artikel
101 Three-dimensional photon confinement in a spherical microcavity with CdTe quantum dots: Raman spectroscopy Rakovich, Yu.P.
2005
26 1-4 p. 28-32
5 p.
artikel
102 Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses Yoon, J.J.
2005
26 1-4 p. 207-211
5 p.
artikel
103 Transition from zero-dimensional to one-dimensional behavior in InAs and CdSe nanorods Millo, Oded
2005
26 1-4 p. 1-8
8 p.
artikel
104 Transport properties of gated sub-micron mesas incorporating InAs self-assembled quantum dots that conduct near zero bias Austing, D.G.
2005
26 1-4 p. 482-485
4 p.
artikel
105 Tunneling-induced dephasing in InP quantum dots Masumoto, Yasuaki
2005
26 1-4 p. 413-416
4 p.
artikel
106 Two-photon excitation of confined biexcitons in CuCl quantum dots Miyajima, K.
2005
26 1-4 p. 33-36
4 p.
artikel
107 Vortex formation in quantum dots in high magnetic fields Saarikoski, H.
2005
26 1-4 p. 317-321
5 p.
artikel
                             107 gevonden resultaten
 
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