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                             83 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Aharonov–Bohm oscillations observed in nanoscale open-dot structures fabricated in an InAs surface inversion layer Sasa, S
 2004
 20 3-4 p. 224-227
4 p.
 artikel
2 Antimonide type-II “W” lasers: growth studies and guided-mode leakage into substrate Bewley, W.W.
 2004
 20 3-4 p. 466-470
5 p.
 artikel
3 Ballistic transport in InSb quantum wells at high temperature Goel, N
 2004
 20 3-4 p. 251-254
4 p.
 artikel
4 Ballistic transport in PbTe-based nanostructures Grabecki, G
 2004
 20 3-4 p. 236-245
10 p.
 artikel
5 Carrier-induced ferromagnetic order in the narrow gap III–V magnetic alloy semiconductor (In,Mn)Sb Yanagi, S.
 2004
 20 3-4 p. 333-337
5 p.
 artikel
6 Charged excitons in quantum dots: novel magnetic behavior and Auger processes Govorov, A.O
 2004
 20 3-4 p. 295-299
5 p.
 artikel
7 Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (100) substrates Ishida, Shuichi
 2004
 20 3-4 p. 255-259
5 p.
 artikel
8 Conference Organization 2004
 20 3-4 p. vi-
1 p.
 artikel
9 Contents 2004
 20 3-4 p. vii-xii
nvt p.
 artikel
10 Correlation of resonance scattering and superconductivity in Pb x Sn1−x Te solid solutions doped with In Popov, Dmitri I.
 2004
 20 3-4 p. 458-461
4 p.
 artikel
11 Design and fabrication of infrared detectors based on lattice-matched InAs0.91Sb0.09 on GaSb Reverchon, J.L.
 2004
 20 3-4 p. 519-522
4 p.
 artikel
12 Determining carrier densities in InMnAs by cyclotron resonance Sanders, G.D.
 2004
 20 3-4 p. 378-381
4 p.
 artikel
13 Effect of structural defects on InSb/Al x In1−x Sb quantum wells grown on GaAs (001) substrates Mishima, T.D
 2004
 20 3-4 p. 260-263
4 p.
 artikel
14 Electric-field control of ferromagnetism in GaSb/Mn digital alloys Kim, G.B.
 2004
 20 3-4 p. 355-359
5 p.
 artikel
15 Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields Sun, Y.
 2004
 20 3-4 p. 374-377
4 p.
 artikel
16 Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure Nitta, Junsaku
 2004
 20 3-4 p. 429-432
4 p.
 artikel
17 Electron–hole symmetry and spin–orbit splitting in IV–VI asymmetric quantum wells Hasegawa, M.M.
 2004
 20 3-4 p. 400-403
4 p.
 artikel
18 Electron–phonon-induced spin relaxation in InAs quantum dots Alcalde, A.M.
 2004
 20 3-4 p. 228-231
4 p.
 artikel
19 Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb Murzyn, P
 2004
 20 3-4 p. 220-223
4 p.
 artikel
20 Electron spin operation by electric fields: spin dynamics and spin injection Rashba, Emmanuel I
 2004
 20 3-4 p. 189-195
7 p.
 artikel
21 Energy relaxation of magnetically confined electrons in quantum cascade lasers Drachenko, O
 2004
 20 3-4 p. 503-506
4 p.
 artikel
22 External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures Liu, X.
 2004
 20 3-4 p. 370-373
4 p.
 artikel
23 Ferromagnetic GaSb/Mn digital alloys Luo, H.
 2004
 20 3-4 p. 338-345
8 p.
 artikel
24 Foreword McCombe, Bruce D.
 2004
 20 3-4 p. v-
1 p.
 artikel
25 GaInAsSb/AlGaAsSb lasers in the wavelength range between 2.73 μm and 2.93 μm Grau, M.
 2004
 20 3-4 p. 507-510
4 p.
 artikel
26 Growth and properties of ferromagnetic In1−x Mn x Sb alloys Wojtowicz, T.
 2004
 20 3-4 p. 325-332
8 p.
 artikel
27 Growth and studies of Hg1−x Cd x Te based low dimensional structures Becker, C.R.
 2004
 20 3-4 p. 436-443
8 p.
 artikel
28 HgSe:Fe quantum dots: growth and characterization Tran-Anh, Tuan
 2004
 20 3-4 p. 444-448
5 p.
 artikel
29 Highly strained In x Ga (1−x) As−In y Al (1−y) As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE Missous, M.
 2004
 20 3-4 p. 496-502
7 p.
 artikel
30 High-resolution X-ray diffraction analysis of SnTe/Sn1−x Eu x Te superlattices grown on (111) BaF2 substrates Abramof, E.
 2004
 20 3-4 p. 462-465
4 p.
 artikel
31 InAs/GaSb/AlSb resonant tunneling spin device concepts Ting, David Z.-Y.
 2004
 20 3-4 p. 350-354
5 p.
 artikel
32 Index of Authors and Papers 2004
 20 3-4 p. 567-574
8 p.
 artikel
33 Infrared negative luminescent devices and higher operating temperature detectors Nash, G.R.
 2004
 20 3-4 p. 540-547
8 p.
 artikel
34 InGaAsSb negative luminescent devices with built-in cavities emitting at 3.9 μm Remennyi, M.A.
 2004
 20 3-4 p. 548-552
5 p.
 artikel
35 InSb epilayers on GaAs(100) for spintronic and magneto-resistive sensor applications Zhang, Tong
 2004
 20 3-4 p. 216-219
4 p.
 artikel
36 Inside Front Cover/Editorial Board page 2004
 20 3-4 p. IFC-
1 p.
 artikel
37 List of Authors 2004
 20 3-4 p. xiii-xv
nvt p.
 artikel
38 Low-threshold interband cascade lasers operating above room temperature Hill, Cory J.
 2004
 20 3-4 p. 486-490
5 p.
 artikel
39 Magnetization and magnetic susceptibility of InAs nano-rings Voskoboynikov, O.
 2004
 20 3-4 p. 278-281
4 p.
 artikel
40 Magnetoconductivity tensor analysis of anomalous transport effects in neutron irradiated HgCdTe epilayers Zhao, Wei
 2004
 20 3-4 p. 246-250
5 p.
 artikel
41 Magnetotransport and magnetic properties of InAs/Mn digital alloys Acbas, G.
 2004
 20 3-4 p. 382-385
4 p.
 artikel
42 Many-body effects on intersubband resonances in narrow InAs/AlSb quantum wells Li, Jianzhong
 2004
 20 3-4 p. 264-267
4 p.
 artikel
43 MBE growth and magnetotransport studies of ferromagnetic Ga1−x Mn x Sb semiconductor layers on hybrid ZnTe/GaAs substrates Lim, W.L.
 2004
 20 3-4 p. 346-349
4 p.
 artikel
44 Microscopic modeling of intersubband resonances in InAs/AlSb quantum wells Li, J
 2004
 20 3-4 p. 268-271
4 p.
 artikel
45 Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface Moiseev, K.D.
 2004
 20 3-4 p. 491-495
5 p.
 artikel
46 Millisecond fluorescence in InAs quantum dots embedded in AlAs Shamirzaev, T.S
 2004
 20 3-4 p. 282-285
4 p.
 artikel
47 Narrow band gap group III-nitride alloys Walukiewicz, Wladek
 2004
 20 3-4 p. 300-307
8 p.
 artikel
48 Negative luminescence from mid-wave infrared HgCdTe diode arrays Lindle, J.R.
 2004
 20 3-4 p. 558-562
5 p.
 artikel
49 Negative luminescence in semiconductors: a retrospective view Malyutenko, V.K.
 2004
 20 3-4 p. 553-557
5 p.
 artikel
50 Novel mid-IR laser based on hybrid AlGaAsSb/InAs/CdMgSe heterostructure Terent'ev, Ya.V.
 2004
 20 3-4 p. 475-478
4 p.
 artikel
51 Optically pumped lead chalcogenide infrared emitters on silicon substrates Kellermann, Klaus
 2004
 20 3-4 p. 536-539
4 p.
 artikel
52 Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots Laurent, S.
 2004
 20 3-4 p. 404-411
8 p.
 artikel
53 Optical spin resonances due to structure and bulk inversion asymmetry in heterostructures Zawadzki, W.
 2004
 20 3-4 p. 392-395
4 p.
 artikel
54 Optimization of a non-cryogenic quantum infrared detector Marre, G.
 2004
 20 3-4 p. 515-518
4 p.
 artikel
55 Optimization of InAs/GaSb type-II superlattices for high performance of photodetectors Haugan, H.J.
 2004
 20 3-4 p. 527-530
4 p.
 artikel
56 Photoluminescence characterized thermal mismatch of PbTe/CdTe single quantum wells grown on GaAs substrates Yano, Mitsuaki
 2004
 20 3-4 p. 449-452
4 p.
 artikel
57 Physical processes of current gain in InAs bipolar junction transistors Wu, X.
 2004
 20 3-4 p. 511-514
4 p.
 artikel
58 Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−x N x alloys Weinstein, B.A
 2004
 20 3-4 p. 317-320
4 p.
 artikel
59 Proceedings of the 11th International Conference on Narrow Gap Semiconductors held in Buffalo, NY, USA 16–20 June 2004
 20 3-4 p. iii-
1 p.
 artikel
60 Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems Nicholas, R.J
 2004
 20 3-4 p. 204-210
7 p.
 artikel
61 Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field Suzuki, K
 2004
 20 3-4 p. 232-235
4 p.
 artikel
62 Rashba polarization in HgCdTe inversion layers at large depletion charges Radantsev, V.F.
 2004
 20 3-4 p. 396-399
4 p.
 artikel
63 Rashba spin-splitting in narrow gap III–V semiconductor quantum wells Stanley, James Paul
 2004
 20 3-4 p. 433-435
3 p.
 artikel
64 Recent progress in the development of type II interband cascade lasers Bradshaw, J.L.
 2004
 20 3-4 p. 479-485
7 p.
 artikel
65 Resonance scattering on In impurity in Pb0.4Sn0.6Te solid solutions Popov, Dmitri I.
 2004
 20 3-4 p. 453-457
5 p.
 artikel
66 Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared Green, Alex M.
 2004
 20 3-4 p. 531-535
5 p.
 artikel
67 Role of hydrogen in improving optical quality of GaNAs alloys Izadifard, M
 2004
 20 3-4 p. 313-316
4 p.
 artikel
68 Shake-up processes in intersubband magneto-photoabsorption of a two-dimensional electron gas Dzyubenko, A.B.
 2004
 20 3-4 p. 424-428
5 p.
 artikel
69 Spin effects in InSb quantum wells Khodaparast, G.A.
 2004
 20 3-4 p. 386-391
6 p.
 artikel
70 Structural and vibrational properties of dilute GaN x As1−x (P1−x ) Talwar, Devki N.
 2004
 20 3-4 p. 321-324
4 p.
 artikel
71 Subject Index 2004
 20 3-4 p. 575-577
3 p.
 artikel
72 Temperature-dependent optical properties of wurtzite InN Chen, Fei
 2004
 20 3-4 p. 308-312
5 p.
 artikel
73 The 6.1 A ̊ family (InAs, GaSb, AlSb) and its heterostructures: a selective review Kroemer, Herbert
 2004
 20 3-4 p. 196-203
8 p.
 artikel
74 The infrared spin-galvanic effect in semiconductor quantum wells Ganichev, S.D.
 2004
 20 3-4 p. 419-423
5 p.
 artikel
75 The sub-micrometer thickness n-InSb/i-GaAs epilayers for magnetoresistor applications at room temperatures of operation Mironov, O.A.
 2004
 20 3-4 p. 523-526
4 p.
 artikel
76 THz spectroscopy of diluted magnetic semiconductors and semiconductor quantum structures in ultrahigh magnetic fields Matsuda, Y.H.
 2004
 20 3-4 p. 360-369
10 p.
 artikel
77 Transport, optical and magnetotransport properties of hetero-epitaxial InAs x Sb1−x /GaAs(x⩽0.06) and bulk InAs x Sb 1−x (x⩽0.05) crystals: experiment and theoretical analysis Bansal, Bhavtosh
 2004
 20 3-4 p. 272-277
6 p.
 artikel
78 Type-II InAs/GaSb superlattices for very long wavelength infrared detectors Brown, Gail J.
 2004
 20 3-4 p. 471-474
4 p.
 artikel
79 Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots Král, K
 2004
 20 3-4 p. 290-294
5 p.
 artikel
80 Ultrafast softening in InMnAs Wang, J.
 2004
 20 3-4 p. 412-418
7 p.
 artikel
81 UP-conversion of terahertz radiation induced by photon drag effect Malyutenko, Volodymyr
 2004
 20 3-4 p. 563-566
4 p.
 artikel
82 Weak-field magnetoresistance anomaly and Shubnikov–de Haas oscillations in Sn-doped InSb thin films on GaAs (100) substrates Ishida, Shuichi
 2004
 20 3-4 p. 211-215
5 p.
 artikel
83 Zeeman effect and magnetic anomalies in narrow-gap semiconductor quantum dots Prado, S.J
 2004
 20 3-4 p. 286-289
4 p.
 artikel
                             83 gevonden resultaten
 
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