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                             65 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absorption cross-sections and lifetimes as a function of size in Si nanocrystals embedded in SiO2 Garcia, C.
 2003
 16 3-4 p. 429-433
5 p.
 artikel
2 Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD Palfinger, G.
 2003
 16 3-4 p. 481-488
8 p.
 artikel
3 A germanium photodetector array for the near infrared monolithically integrated with silicon CMOS readout electronics Masini, Gianlorenzo
 2003
 16 3-4 p. 614-619
6 p.
 artikel
4 Amorphization and recrystallization of ion implanted Si nanocrystals probed through their luminescence properties Pacifici, D.
 2003
 16 3-4 p. 404-409
6 p.
 artikel
5 Anneal temperature dependence of Si/SiO2 superlattices photoluminescence Portier, X.
 2003
 16 3-4 p. 439-444
6 p.
 artikel
6 A pulsed synthesis of β-FeSi2 layers on silicon implanted with Fe+ ions Terukov, E.I.
 2003
 16 3-4 p. 370-375
6 p.
 artikel
7 a-Si:H based two-dimensional photonic crystals Bennici, E.
 2003
 16 3-4 p. 539-543
5 p.
 artikel
8 Buffer layer influence on guiding properties of oxidized porous silicon waveguides Balucani, M.
 2003
 16 3-4 p. 574-579
6 p.
 artikel
9 Conference Title page 2003
 16 3-4 p. iii-
1 p.
 artikel
10 Contents 2003
 16 3-4 p. vii-x
nvt p.
 artikel
11 Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys Molinari, M.
 2003
 16 3-4 p. 445-449
5 p.
 artikel
12 Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters Gebel, T.
 2003
 16 3-4 p. 499-504
6 p.
 artikel
13 Editorial 2003
 16 3-4 p. v-vi
nvt p.
 artikel
14 Effect of lower growth temperature on C incorporation in GeC epilayers on Si(001) grown by MBE Okinaka, M.
 2003
 16 3-4 p. 473-475
3 p.
 artikel
15 Effect of swift heavy ions on the photoluminescence properties of Si/SiO2 multilayers Gourbilleau, F
 2003
 16 3-4 p. 434-438
5 p.
 artikel
16 Efficient silicon light emitting diodes made by dislocation engineering Lourenço, M.A.
 2003
 16 3-4 p. 376-381
6 p.
 artikel
17 Electroluminescence from Si/SiGe quantum cascade emitters Paul, D.J.
 2003
 16 3-4 p. 309-314
6 p.
 artikel
18 Electroluminescence from thin SiO2 layers after Si- and C-coimplantation Gebel, T.
 2003
 16 3-4 p. 366-369
4 p.
 artikel
19 Electroluminescence properties of light emitting devices based on silicon nanocrystals Irrera, A.
 2003
 16 3-4 p. 395-399
5 p.
 artikel
20 Electroluminescence study on electron hole plasma in strained SiGe epitaxial layers Stoica, T.
 2003
 16 3-4 p. 359-365
7 p.
 artikel
21 Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands Elkurdi, M.
 2003
 16 3-4 p. 450-454
5 p.
 artikel
22 Enhancement of the emission yield of silicon nanocrystals in silica due to surface passivation Pellegrino, P.
 2003
 16 3-4 p. 424-428
5 p.
 artikel
23 Erbium-doped Si nanocrystals: optical properties and electroluminescent devices Pacifici, D.
 2003
 16 3-4 p. 331-340
10 p.
 artikel
24 Er emission from Er-doped Si-rich silicon oxide layers synthesised by hydrogen reactive magnetron co-sputtering Gourbilleau, F.
 2003
 16 3-4 p. 341-346
6 p.
 artikel
25 High-efficiency silicon light emitting diodes Green, Martin A.
 2003
 16 3-4 p. 351-358
8 p.
 artikel
26 Hydrogenation effect on silicon on sapphire grown by rapid thermal chemical vapor deposition Cho, Hoon Young
 2003
 16 3-4 p. 489-494
6 p.
 artikel
27 IFC: Editorial Board 2003
 16 3-4 p. IFC-
1 p.
 artikel
28 Imprint lithography of pyramidal photonic pillars using hydrazine etching Grigaliūnas, V.
 2003
 16 3-4 p. 568-573
6 p.
 artikel
29 Index of Authors and Papers 2003
 16 3-4 p. 629-636
8 p.
 artikel
30 Influence of the temperature on the photoluminescence of silicon clusters embedded in a silicon oxide matrix Rinnert, H.
 2003
 16 3-4 p. 382-387
6 p.
 artikel
31 Interrelation between microstructure and optical properties of erbium-doped nanocrystalline thin films Losurdo, M.
 2003
 16 3-4 p. 414-419
6 p.
 artikel
32 Intraband photoresponse of SiGe quantum dot/quantum well multilayers Bougeard, D.
 2003
 16 3-4 p. 609-613
5 p.
 artikel
33 Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices Modreanu, M.
 2003
 16 3-4 p. 461-466
6 p.
 artikel
34 Ion-beam irradiation effect on solid-phase growth of β-FeSi2 Murakami, Y.
 2003
 16 3-4 p. 505-508
4 p.
 artikel
35 Larger absolute photonic band gap in two-dimensional air–silicon structures Marsal, L.F.
 2003
 16 3-4 p. 580-585
6 p.
 artikel
36 List of Authors 2003
 16 3-4 p. xi-xii
nvt p.
 artikel
37 Luminescence enhancement by hydrogenation of Si:Er,O Kocher-Oberlehner, G.
 2003
 16 3-4 p. 347-350
4 p.
 artikel
38 Luminescence study of Si/Ge quantum dots Larsson, M.
 2003
 16 3-4 p. 476-480
5 p.
 artikel
39 Luminescent silicon nanocrystal dots fabricated by SiCl4/H2 RF plasma-enhanced chemical vapor deposition Shirai, Hajime
 2003
 16 3-4 p. 388-394
7 p.
 artikel
40 Magneto-optical study of Er+3-related center in selectively doped Si:Er Vinh, N.Q.
 2003
 16 3-4 p. 544-546
3 p.
 artikel
41 Modeling of magnetically controlled Si-based optoelectronic devices Dugaev, V.K.
 2003
 16 3-4 p. 558-562
5 p.
 artikel
42 Monte Carlo analysis of electron heating in Si/SiO2 superlattices Rosini, M.
 2003
 16 3-4 p. 455-460
6 p.
 artikel
43 New insights on amorphous silicon-nitride microcavities Ballarini, V.
 2003
 16 3-4 p. 591-595
5 p.
 artikel
44 Non-pixeled amorphous silicon-based image sensors Fernandes, M.
 2003
 16 3-4 p. 563-567
5 p.
 artikel
45 Optical interconnects for future high performance integrated circuits Kapur, Pawan
 2003
 16 3-4 p. 620-627
8 p.
 artikel
46 Optical properties of silicon nanocrystal LEDs De La Torre, J.
 2003
 16 3-4 p. 326-330
5 p.
 artikel
47 Photoluminescence of Ge(Si)/Si(001) self-assembled islands in the near infra-red wavelength range Novikov, A.V.
 2003
 16 3-4 p. 467-472
6 p.
 artikel
48 Radiation damage in Si photodiodes by high-temperature irradiation Ohyama, H.
 2003
 16 3-4 p. 533-538
6 p.
 artikel
49 Reverse biased porous silicon light-emitting diodes for optical intra-chip interconnects Lazarouk, S.K.
 2003
 16 3-4 p. 495-498
4 p.
 artikel
50 Self-assembled Ge-islands for photovoltaic applications Konle, J.
 2003
 16 3-4 p. 596-601
6 p.
 artikel
51 Shape transformation of Ge quantum dots due to Si overgrowth Kirfel, O.
 2003
 16 3-4 p. 602-608
7 p.
 artikel
52 Si-based materials and devices for light emission in silicon Castagna, Maria Eloisa
 2003
 16 3-4 p. 547-553
7 p.
 artikel
53 SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3–1.55 μm Elfving, A.
 2003
 16 3-4 p. 528-532
5 p.
 artikel
54 Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands El Kurdi, M.
 2003
 16 3-4 p. 523-527
5 p.
 artikel
55 Si/SiO2 multilayers: synthesis by reactive magnetron sputtering and photoluminescence emission Ternon, C.
 2003
 16 3-4 p. 517-522
6 p.
 artikel
56 Si1−x Ge x /Si multi-quantum well phototransistor for near-infrared operation Pei, Z
 2003
 16 3-4 p. 554-557
4 p.
 artikel
57 Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals Dal Negro, L.
 2003
 16 3-4 p. 297-308
12 p.
 artikel
58 Strain compensated Si/SiGe quantum well and quantum cascade on Si0.5Ge0.5 pseudosubstrate Diehl, L.
 2003
 16 3-4 p. 315-320
6 p.
 artikel
59 Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization Young Kim, Do
 2003
 16 3-4 p. 400-403
4 p.
 artikel
60 Structure and optoelectronic properties of Si/O superlattice Dovidenko, K.
 2003
 16 3-4 p. 509-516
8 p.
 artikel
61 Studies of silicon nanocrystals in phosphorus rich SiO2 matrices Švrček, V.
 2003
 16 3-4 p. 420-423
4 p.
 artikel
62 Subject Index 2003
 16 3-4 p. 637-639
3 p.
 artikel
63 Technological aspects of oxidated porous silicon waveguides Balucani, M.
 2003
 16 3-4 p. 586-590
5 p.
 artikel
64 The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation Tetelbaum, D.I.
 2003
 16 3-4 p. 410-413
4 p.
 artikel
65 X-ray absorption study of light emitting silicon nanocrystals Daldosso, N.
 2003
 16 3-4 p. 321-325
5 p.
 artikel
                             65 gevonden resultaten
 
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