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                             279 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Above-room-temperature operation of IV–VI microcavity lasers Schwarzl, T.
 2002
 13 2-4 p. 888-891
4 p.
 artikel
2 Absorption and photoluminescence in PbTe/Pb1−x Eu x Te quantum wells Abramof, E
 2002
 13 2-4 p. 1224-1228
5 p.
 artikel
3 A combined investigation of lateral and vertical Stark effect in InAs self-assembled quantum dots in waveguide structures Wolst, O
 2002
 13 2-4 p. 283-288
6 p.
 artikel
4 All-optical quantum dot implementation for quantum computing D'Amico, I
 2002
 13 2-4 p. 620-623
4 p.
 artikel
5 AlN/GaN short-period superlattices with monolayer AlN for optical-device applications Ishida, A
 2002
 13 2-4 p. 1098-1101
4 p.
 artikel
6 Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range Senz, V.
 2002
 13 2-4 p. 723-727
5 p.
 artikel
7 Anomalous diamagnetic shift of excitons in II–VI quantum dots and in indirect short period superlattices Miura, N
 2002
 13 2-4 p. 263-268
6 p.
 artikel
8 A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics Xu, H.Q
 2002
 13 2-4 p. 942-945
4 p.
 artikel
9 A quantum dot infrared photodetector with lateral carrier transport Chu, L
 2002
 13 2-4 p. 301-304
4 p.
 artikel
10 A quantum dot single-photon source Becher, C
 2002
 13 2-4 p. 412-417
6 p.
 artikel
11 A single-mode solid-state source of single photons based on isolated quantum dots in a micropillar Moreau, E
 2002
 13 2-4 p. 418-422
5 p.
 artikel
12 Atomistic simulation of In x Ga1−x As/GaAs quantum dots with nonuniform composition Migliorato, M.A
 2002
 13 2-4 p. 1147-1150
4 p.
 artikel
13 Branching ratio of light incident on a photonic crystal in a multibranch dispersion region Minami, Takayuki
 2002
 13 2-4 p. 432-436
5 p.
 artikel
14 Breakdown of optical selection rules in a highly biased quantum well Imai, T.
 2002
 13 2-4 p. 481-484
4 p.
 artikel
15 Capture and confinement of light and carriers in graded-index quantum well laser structures Aichmayr, G
 2002
 13 2-4 p. 885-887
3 p.
 artikel
16 Charge confinement and uniformity of stacked InP quantum dots studied by magneto-optical spectroscopy Maes, J.
 2002
 13 2-4 p. 203-207
5 p.
 artikel
17 Charged excitons in single CdTe quantum dots Besombes, L.
 2002
 13 2-4 p. 134-138
5 p.
 artikel
18 Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Kamins, T.I
 2002
 13 2-4 p. 995-998
4 p.
 artikel
19 Coherent dynamics of microcavity polaritons in the nonlinear regime Huynh, A
 2002
 13 2-4 p. 427-431
5 p.
 artikel
20 Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells Friedland, K.-J
 2002
 13 2-4 p. 642-645
4 p.
 artikel
21 Conference Committee 2002
 13 2-4 p. vii-
1 p.
 artikel
22 Contents 2002
 13 2-4 p. xi-xxix
nvt p.
 artikel
23 Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy Muranaka, Tsutomu
 2002
 13 2-4 p. 1185-1189
5 p.
 artikel
24 Coupled quantum dots in single-wall carbon nanotubes Ishibashi, K
 2002
 13 2-4 p. 782-785
4 p.
 artikel
25 Coupling between lateral modes in a vertical resonant tunneling structure Gustafson, Boel
 2002
 13 2-4 p. 950-953
4 p.
 artikel
26 Crystal and electronic structures of new molecular semiconductors with trinitroresorcinol anions Kazheva, O.N.
 2002
 13 2-4 p. 1268-1270
3 p.
 artikel
27 Current modulated light reflectance spectroscopy with submicron spatial resolution in semiconductor heterostructures Ryabushkin, O.A.
 2002
 13 2-4 p. 374-376
3 p.
 artikel
28 2D–1D crossover from quantum well to quantum wire behaviour in GaAs v-groove structures Roshan, R
 2002
 13 2-4 p. 174-177
4 p.
 artikel
29 Density and size control of self-assembled InAs quantum dots: preparation of very low-density dots by post-annealing Kamiya, I.
 2002
 13 2-4 p. 1172-1175
4 p.
 artikel
30 Dephasing time characterization of InAs quantum dots by four-wave mixing measurement Nishikawa, S
 2002
 13 2-4 p. 273-277
5 p.
 artikel
31 Designing heterostructures with predefined value of light-hole g factor for coherent solid-state quantum receiver Kiselev, A.A
 2002
 13 2-4 p. 630-633
4 p.
 artikel
32 Direct experimental verification of the q-dependence of the electron–LO-phonon interaction Kainth, D.S.
 2002
 13 2-4 p. 337-340
4 p.
 artikel
33 Direct fabrication of parallel quantum dots with an atomic force microscope Keyser, U.F
 2002
 13 2-4 p. 1155-1158
4 p.
 artikel
34 Directional phonon-assisted cascading of photoexcited carriers in stepped In x (Al0.17Ga0.83)1−x As/Al0.17Ga0.83As multiple quantum wells Machida, S
 2002
 13 2-4 p. 182-185
4 p.
 artikel
35 Discrete energy level spectrum dependence of fractal conductance fluctuations in semiconductor billiards Micolich, A.P
 2002
 13 2-4 p. 683-686
4 p.
 artikel
36 Double-dot-like charge transport through a small size silicon single electron transistor Choi, B.H
 2002
 13 2-4 p. 946-949
4 p.
 artikel
37 Dynamical transport of photoexcited carriers between a narrow and a wide quantum well embedded in a GaAs/AlAs superlattice Satake, A
 2002
 13 2-4 p. 711-714
4 p.
 artikel
38 Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells Skierbiszewski, C.
 2002
 13 2-4 p. 1078-1081
4 p.
 artikel
39 Effective spin diffusion across hugely lattice mismatched heterointerfaces Ghali, M.
 2002
 13 2-4 p. 547-551
5 p.
 artikel
40 Effect of an electric field on electronic excitations in double quantum wells Haboeck, U
 2002
 13 2-4 p. 345-348
4 p.
 artikel
41 Effect of doping profile on the potential performance of buried channel SiGeC/Si heterostructure MOS devices Cassan, E
 2002
 13 2-4 p. 957-960
4 p.
 artikel
42 Effect of phosphorus on Ge/Si(001) island formation Kamins, T.I
 2002
 13 2-4 p. 974-977
4 p.
 artikel
43 Effects of spin splitting due to inversion asymmetry on magnetization and specific heat of 2D electron gas Zawadzki, W
 2002
 13 2-4 p. 533-537
5 p.
 artikel
44 Electrical rectification by magnetic edge states Lawton, D.
 2002
 13 2-4 p. 699-702
4 p.
 artikel
45 Electrical spin injection from Fe into GaAs at room temperature Ramsteiner, M
 2002
 13 2-4 p. 529-532
4 p.
 artikel
46 Electric field enhancement of the Rabi splitting in a superlattice-microcavity system Dickerson, J.H.
 2002
 13 2-4 p. 398-402
5 p.
 artikel
47 Electron and hole localization in coupled InP/InGaP self-assembled quantum dots Tadić, M
 2002
 13 2-4 p. 237-240
4 p.
 artikel
48 Electron dynamics of a single quantum dot probed with wideband millimeter-wave spectroscopy Qin, Hua
 2002
 13 2-4 p. 109-113
5 p.
 artikel
49 Electronic structure of quantum-dot molecules and solids Bryant, Garnett W.
 2002
 13 2-4 p. 293-296
4 p.
 artikel
50 Electronic structure of self-assembled InAs quantum dots Bock, C
 2002
 13 2-4 p. 208-211
4 p.
 artikel
51 Electronic transport properties of single-crystal silicon nanowires fabricated using an atomic force microscope Clément, N
 2002
 13 2-4 p. 999-1002
4 p.
 artikel
52 Electron–phonon coupling in degenerate silicon-on-insulator film probed using superconducting Schottky junctions Prunnila, M
 2002
 13 2-4 p. 773-776
4 p.
 artikel
53 Electron transport and optical properties of InGaAs quantum wells with quasi-periodic (L 0∼30 nm) interface corrugation grown on vicinal (1 1 1)B GaAs Noda, T
 2002
 13 2-4 p. 333-336
4 p.
 artikel
54 Enhancement of the exciton exchange energy splitting by the confined light field in strained microcavities Dasbach, G
 2002
 13 2-4 p. 394-397
4 p.
 artikel
55 Entangled states of electron–hole complex in a single InAs/GaAs coupled quantum dot molecule Korkusinski, M.
 2002
 13 2-4 p. 610-615
6 p.
 artikel
56 Epitaxy and characterization of GaMn(N)As for spin electronics Waag, A
 2002
 13 2-4 p. 593-596
4 p.
 artikel
57 Etching temperature dependent mobilities up to 190.000 cm 2/Vs at chlorine etched and regrown interfaces Beyer, S
 2002
 13 2-4 p. 653-656
4 p.
 artikel
58 Evidence for type I band alignment in GaNAs/GaAs quantum structures by optical spectroscopies Buyanova, I.A.
 2002
 13 2-4 p. 1074-1077
4 p.
 artikel
59 Exchange coupling and polarization relaxation in self-assembled quantum dots Ferreira, R.
 2002
 13 2-4 p. 216-219
4 p.
 artikel
60 Exchange interactions in CdMnTe/CdMgTe quantum wells under high magnetic fields Yasuhira, T
 2002
 13 2-4 p. 568-571
4 p.
 artikel
61 Excitation of Nd3+ and Tm3+ by the energy transfer from Si nanocrystals Watanabe, Kei
 2002
 13 2-4 p. 1038-1042
5 p.
 artikel
62 Exciton complexes in individual quantum dots as a single-photon source Stevenson, R.M
 2002
 13 2-4 p. 423-426
4 p.
 artikel
63 Excitonic instabilities in semiconductor superlattices in the lowest Landau level Marinescu, D.C.
 2002
 13 2-4 p. 353-356
4 p.
 artikel
64 Excitons in quantum-ring structures in a magnetic field: optical properties and persistent currents Govorov, A.O
 2002
 13 2-4 p. 297-300
4 p.
 artikel
65 Extremely flat growth-interrupted InAlAs surface grown on a (411)A -oriented InP substrate by molecular beam epitaxy Watanabe, Issei
 2002
 13 2-4 p. 1195-1199
5 p.
 artikel
66 Fabrication and characterization of III–V semiconductor superlattices with sinusoidal compositional modulation Liu, X.
 2002
 13 2-4 p. 1143-1146
4 p.
 artikel
67 Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(111)A heteroepitaxial systems Yamaguchi, H
 2002
 13 2-4 p. 1163-1167
5 p.
 artikel
68 Fabrication of height-controlled InAs quantum dots on GaAs surfaces by in situ AsBr3 etching and molecular beam epitaxy Yang, T
 2002
 13 2-4 p. 1151-1154
4 p.
 artikel
69 Fabrication of 3.9–4.2 μm mid-infrared surface emitting PbSe/PbEuTe quantum dot lasers using molecular beam epitaxy Springholz, G.
 2002
 13 2-4 p. 876-880
5 p.
 artikel
70 Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching Wieser, U
 2002
 13 2-4 p. 1047-1050
4 p.
 artikel
71 Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications Kawaguchi, K
 2002
 13 2-4 p. 1051-1054
4 p.
 artikel
72 Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping Reuter, D
 2002
 13 2-4 p. 938-941
4 p.
 artikel
73 Fast electron relaxation times in coupled double quantum well structures Tavares, Marcos R.S.
 2002
 13 2-4 p. 794-797
4 p.
 artikel
74 Ferromagnetic resonance studies of (Ga,Mn)As with MnAs clusters Hartmann, Th
 2002
 13 2-4 p. 572-576
5 p.
 artikel
75 Ferromagnetism in II–VI-based semiconductor structures Cibert, J.
 2002
 13 2-4 p. 489-494
6 p.
 artikel
76 Fine structure of excitons: a sensitive tool for probing the symmetry of self-assembled quantum dots Bayer, M
 2002
 13 2-4 p. 123-126
4 p.
 artikel
77 Finite size effects on superlattice acoustical phonons studied by microcavity-enhanced Raman scattering Trigo, M
 2002
 13 2-4 p. 437-440
4 p.
 artikel
78 FIR quantum cascade lasers at λ>20 μm and THz emitters at λ=80 μm Colombelli, R
 2002
 13 2-4 p. 848-853
6 p.
 artikel
79 First principles calculations of the dark current in quantum well infrared photodetectors Etteh, N.E.I.
 2002
 13 2-4 p. 381-384
4 p.
 artikel
80 Foreword Bauer, Günther
 2002
 13 2-4 p. v-vi
nvt p.
 artikel
81 Formation of GaSb/GaAs quantum dots in MOCVD growth Müller-Kirsch, L
 2002
 13 2-4 p. 1181-1184
4 p.
 artikel
82 From two-dimensional to three-dimensional quantum dots Lindemann, S.
 2002
 13 2-4 p. 638-641
4 p.
 artikel
83 GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture Kasai, Seiya
 2002
 13 2-4 p. 925-929
5 p.
 artikel
84 Gain characteristics of ideal dilute nitride quantum well lasers Tomić, S
 2002
 13 2-4 p. 1102-1105
4 p.
 artikel
85 Gain optimization in optically pumped unipolar quantum-well lasers Tomić, S.
 2002
 13 2-4 p. 862-865
4 p.
 artikel
86 Gated wires and interferometers based on Si/SiGe heterostructures Estibals, O
 2002
 13 2-4 p. 1043-1046
4 p.
 artikel
87 Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures Tsubaki, K
 2002
 13 2-4 p. 1111-1114
4 p.
 artikel
88 Geometrical resonance in the resistivity of wide quantum wells Sotomayor Choque, N.M.
 2002
 13 2-4 p. 777-781
5 p.
 artikel
89 Ge quantum dots in Si: self-assembly, stacking and level spectroscopy Brunner, K.
 2002
 13 2-4 p. 1018-1021
4 p.
 artikel
90 Giant permanent dipole moments of excitons in semiconductor nanostructures Schulhauser, C.
 2002
 13 2-4 p. 161-164
4 p.
 artikel
91 Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures Ohlsson, B.J
 2002
 13 2-4 p. 1126-1130
5 p.
 artikel
92 Growth characteristics and tunneling magnetoresistance of MnAs/AlAs/MnAs trilayer heterostructures grown on vicinal GaAs(111)B substrates Sugahara, Satoshi
 2002
 13 2-4 p. 582-588
7 p.
 artikel
93 Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: correlations between material and device properties Zimin, Dmitri
 2002
 13 2-4 p. 1220-1223
4 p.
 artikel
94 Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation Trampert, Achim
 2002
 13 2-4 p. 1119-1125
7 p.
 artikel
95 Heterostructure interface effects on the far-infrared magneto-optical spectra of InAs/Gasb quantum wells Comanescu, G
 2002
 13 2-4 p. 186-189
4 p.
 artikel
96 High-field electron transport in GaAs/Al x Ga1−x As p–i–n–i–p-structures investigated by ultrafast absorption changes Lutz, H.W
 2002
 13 2-4 p. 802-805
4 p.
 artikel
97 High-mobility electrons in modulation-doped AlAs quantum wells De Poortere, E.P.
 2002
 13 2-4 p. 646-648
3 p.
 artikel
98 High performance single mode GaAs quantum cascade lasers Schrenk, W
 2002
 13 2-4 p. 840-843
4 p.
 artikel
99 High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity Beyer, H.
 2002
 13 2-4 p. 965-968
4 p.
 artikel
100 Hole transport in SiGe channels on step-bunched vicinal Si surfaces Neumann, R.
 2002
 13 2-4 p. 986-989
4 p.
 artikel
101 Hot-carrier dynamics in semiconductor-based quantum-cascade lasers: a Monte Carlo study Iotti, Rita C
 2002
 13 2-4 p. 715-718
4 p.
 artikel
102 Hund's first rule and addition energy spectra of cylindrical quantum dots Matagne, P
 2002
 13 2-4 p. 679-682
4 p.
 artikel
103 Impact of exciton localization on cavity polaritons Kulakovskii, V.D
 2002
 13 2-4 p. 455-458
4 p.
 artikel
104 Improved large optical cavity design for 10.6 μm (Al)GaAs quantum cascade lasers Scarpa, G
 2002
 13 2-4 p. 844-847
4 p.
 artikel
105 Improvement in photoluminescence efficiency of Si1−x Ge x alloy nanocrystals embedded in SiO2 matrices by P doping Toshikiyo, Kimiaki
 2002
 13 2-4 p. 1034-1037
4 p.
 artikel
106 Increased epitaxial thickness limit in low-temperature GaAs grown on a vicinal substrate Herfort, J
 2002
 13 2-4 p. 1190-1194
5 p.
 artikel
107 Index of Authors and Papers 2002
 13 2-4 p. I-XXIII
nvt p.
 artikel
108 Influence of capping conditions on structural properties of CdSe/ZnSe quantum dot structures Passow, T
 2002
 13 2-4 p. 1208-1211
4 p.
 artikel
109 Influence of the Si–Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (001) Dashiell, M.W
 2002
 13 2-4 p. 1030-1033
4 p.
 artikel
110 Influence of the size of self-assembled InAs/AlAs quantum dots on photoluminescence and resonant tunneling Pierz, K
 2002
 13 2-4 p. 761-764
4 p.
 artikel
111 InGaAs/InAlAs superlattice detector for THz radiation Schomburg, E
 2002
 13 2-4 p. 912-915
4 p.
 artikel
112 (In,Ga)As islands formed on shallow patterned GaAs (100) substrates by molecular beam epitaxy Gong, Q
 2002
 13 2-4 p. 1176-1180
5 p.
 artikel
113 In situ structuring during MBE regrowth with shadow masks Schallenberg, T
 2002
 13 2-4 p. 1212-1215
4 p.
 artikel
114 Intensity-independent high polarization- or wavelength-sensitive opto-electronic switches Spieler, J
 2002
 13 2-4 p. 806-810
5 p.
 artikel
115 Interdot energy transfer in a system of coupled InAs/GaAs quantum dots Mazur, Yu.I
 2002
 13 2-4 p. 255-258
4 p.
 artikel
116 Interplay of surface charges and excitons localized in CdSe/ZnSe quantum dots Türck, V
 2002
 13 2-4 p. 269-272
4 p.
 artikel
117 Intersubband plasmon–polaritons in MQW structures and their manifestation in IR spectra Załużny, M.
 2002
 13 2-4 p. 370-373
4 p.
 artikel
118 Intersubband quantum cascades in the Si/SiGe material system Diehl, L.
 2002
 13 2-4 p. 829-834
6 p.
 artikel
119 Intersubband relaxation dynamics in semiconductor quantum structures Bratschitsch, R.
 2002
 13 2-4 p. 908-911
4 p.
 artikel
120 Intersubband transitions of boron-doped self-assembled Ge quantum dots Fromherz, T
 2002
 13 2-4 p. 1022-1025
4 p.
 artikel
121 Intrinsic dipole–dipole excitonic coupling in GaN quantum dots: application to quantum information processing De Rinaldis, S
 2002
 13 2-4 p. 624-629
6 p.
 artikel
122 Investigation of injector doping density on intersubband terahertz electro-luminescence from GaAs–AlGaAs quantum cascade structures Dhillon, S.S
 2002
 13 2-4 p. 357-360
4 p.
 artikel
123 Investigation of nano-electromechanical-systems using surface acoustic waves Beil, F.W.
 2002
 13 2-4 p. 473-476
4 p.
 artikel
124 Investigation of self-aligned p++-GaAs/n-InGaP heterojunction field-effect transistors Lour, W.-S.
 2002
 13 2-4 p. 934-937
4 p.
 artikel
125 Level bleaching in a single quantum dot observed by photocurrent spectroscopy Beham, Evelin
 2002
 13 2-4 p. 139-142
4 p.
 artikel
126 Lifetime of photoexcited carriers in modulation-doped quantum dot infrared photodetectors Lee, Seung-Woong
 2002
 13 2-4 p. 305-308
4 p.
 artikel
127 Light emission from erbium-doped nanostructures embedded in silicon microcavities Bagraev, N.T
 2002
 13 2-4 p. 1059-1062
4 p.
 artikel
128 Linewidth broadening of excitonic luminescence from quantum wells in pulsed magnetic fields Polimeni, A
 2002
 13 2-4 p. 349-352
4 p.
 artikel
129 List of sponsors 2002
 13 2-4 p. viii-ix
nvt p.
 artikel
130 Localised and resonant states of shallow acceptors in Ge/Ge1−x Si x multiple-quantum well heterostructures Aleshkin, V.Ya.
 2002
 13 2-4 p. 317-320
4 p.
 artikel
131 Local spectroscopy of edge channels in the quantum Hall regime with local probe techniques Ihn, T
 2002
 13 2-4 p. 671-674
4 p.
 artikel
132 Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy Motohisa, J
 2002
 13 2-4 p. 687-690
4 p.
 artikel
133 μ-Luminescence study of hybrid ferromagnet/diluted magnetic semiconductor quantum structures Cywiński, G.
 2002
 13 2-4 p. 560-563
4 p.
 artikel
134 Magnetic-field-induced enhancement of terahertz emission from III–V semiconductor surfaces Johnston, M.B
 2002
 13 2-4 p. 896-899
4 p.
 artikel
135 Magneto-conductance in dot array system at high-magnetic fields Aoki, N
 2002
 13 2-4 p. 769-772
4 p.
 artikel
136 Magneto-optical properties of a Si-doped GaAs:MnAs-based magneto-photonic crystal operating at 1.55μm Shimizu, H
 2002
 13 2-4 p. 597-601
5 p.
 artikel
137 Magneto-optical properties of ring-shaped self-assembled InGaAs quantum dots Haft, D.
 2002
 13 2-4 p. 165-169
5 p.
 artikel
138 Magnetoresistance of a modulated two-dimensional electron gas in a parallel magnetic field Nauen, A
 2002
 13 2-4 p. 732-735
4 p.
 artikel
139 Magnetoresistance of vertical transport in InAs/GaSb superlattices Broadley, V.J.
 2002
 13 2-4 p. 736-740
5 p.
 artikel
140 Magnetotransport through AFM-defined antidot arrays Dorn, A
 2002
 13 2-4 p. 719-722
4 p.
 artikel
141 Manifestations of quantum chaos in spectra of 2D photonic crystals Gumen, L.N
 2002
 13 2-4 p. 459-462
4 p.
 artikel
142 Manipulating single quantum dot states in a lateral electric field Seufert, J
 2002
 13 2-4 p. 147-150
4 p.
 artikel
143 Many-particle effects in excitonic transitions in type-II Ge/Si quantum dots Yakimov, A.I
 2002
 13 2-4 p. 1026-1029
4 p.
 artikel
144 Measuring the energy levels and wave functions in a single quantum dot Hill, R.J.A
 2002
 13 2-4 p. 634-637
4 p.
 artikel
145 Measuring the potential distribution inside soft organic semiconductors with a scanning-tunneling microscope Kemerink, M
 2002
 13 2-4 p. 1247-1250
4 p.
 artikel
146 Micro-Raman scattering study of Ga1−x Mn xAs Limmer, W
 2002
 13 2-4 p. 589-592
4 p.
 artikel
147 Microscopic carrier dynamics in quantum wells modulated by high-frequency lateral fields Santos, P.V
 2002
 13 2-4 p. 467-472
6 p.
 artikel
148 Microstructure and electronic characterization of InGaAs containing layers of self-assembled ErAs nanoparticles Hanson, M.P.
 2002
 13 2-4 p. 602-605
4 p.
 artikel
149 Miniband magneto-transport in GaAs/AlAs island superlattices Patanè, A
 2002
 13 2-4 p. 786-789
4 p.
 artikel
150 Model for ballistic spin-transport in ferromagnet/two-dimensional electron gas/ferromagnet structures Schäpers, Th.
 2002
 13 2-4 p. 564-567
4 p.
 artikel
151 Modified spontaneous emission properties of CdS quantum dots embedded in novel three-dimensional microcavities Kumano, H.
 2002
 13 2-4 p. 441-445
5 p.
 artikel
152 Morphological and optical anisotropy of quantum dots probed by magneto-tunneling and photoluminescence-polarization spectroscopy Patanè, A
 2002
 13 2-4 p. 170-173
4 p.
 artikel
153 Multilevel logic element based on the long-period GaAs/AlGaAs superlattice Mityagin, Yu.A.
 2002
 13 2-4 p. 961-964
4 p.
 artikel
154 Nanoprobe photoluminescence of quasi-zero-dimensional InGaAsP quantum dots Ozasa, Kazunari
 2002
 13 2-4 p. 212-215
4 p.
 artikel
155 Nano-scale dislocation patterning in PbTe on PbSe (1 0 0) heteroepitaxy studied by UHV scanning tunneling microscopy Wiesauer, K
 2002
 13 2-4 p. 1216-1219
4 p.
 artikel
156 Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field Achermann, M
 2002
 13 2-4 p. 819-822
4 p.
 artikel
157 Nanotechnology approaches to self-organized bio-molecular devices Cingolani, Roberto
 2002
 13 2-4 p. 1229-1235
7 p.
 artikel
158 Narrow electron injector for hot electron spectroscopy Kast, M
 2002
 13 2-4 p. 728-731
4 p.
 artikel
159 Negative magnetoresistance of SiGe quantum wells doped with boron Zobl, R.
 2002
 13 2-4 p. 741-743
3 p.
 artikel
160 Non-linear spin transport in magnetic semiconductor multiple quantum wells Sánchez, David
 2002
 13 2-4 p. 525-528
4 p.
 artikel
161 Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers Meduňa, M
 2002
 13 2-4 p. 1003-1007
5 p.
 artikel
162 Observation of dip structures in PLE spectra of a highly excited single self-assembled quantum dot Kako, S
 2002
 13 2-4 p. 151-154
4 p.
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163 On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers Brunthaler, G
 2002
 13 2-4 p. 691-694
4 p.
 artikel
164 On the spin injection in ZnMnSe/ZnCdSe heterostructures Buyanova, I.A
 2002
 13 2-4 p. 538-541
4 p.
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165 Optical and electrical investigation of the population properties for quantum cascade structures Schrottke, L
 2002
 13 2-4 p. 866-870
5 p.
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166 Optical double resonance of electronic Raman scattering in an AlAs–AlGaAs microcavity Kipp, T
 2002
 13 2-4 p. 408-411
4 p.
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167 Optical emission from a V-groove quantum wire laser diode immersed in high magnetic fields Sirigu, L
 2002
 13 2-4 p. 881-884
4 p.
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168 Optically detected single-electron charging in a quantum dot Zrenner, A
 2002
 13 2-4 p. 95-100
6 p.
 artikel
169 Optical properties of single charge tuneable InGaAs quantum dots Ashmore, A.D
 2002
 13 2-4 p. 127-130
4 p.
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170 Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures Winzer, A.T
 2002
 13 2-4 p. 289-292
4 p.
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171 Optical property of Fe/GaAs(001) hybrid structures grown by molecular beam epitaxy Chye, Y.
 2002
 13 2-4 p. 1135-1138
4 p.
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172 Optical spectroscopy of single quantum dot molecules under applied electric field Shtrichman, I
 2002
 13 2-4 p. 119-122
4 p.
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173 Organic microcavities based on thermally evaporated TeO x -LiF dielectric mirrors Anni, M
 2002
 13 2-4 p. 451-454
4 p.
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174 Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers Teles, L.K
 2002
 13 2-4 p. 1086-1089
4 p.
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175 Phonons in self-assembled Ge/Si structures Milekhin, A.G
 2002
 13 2-4 p. 982-985
4 p.
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176 Photo-carrier-induced magnetism in (In,Mn)As/GaSb magnetic alloy semiconductor heterostructures Munekata, H
 2002
 13 2-4 p. 516-520
5 p.
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177 Photoconductive response of InAs/GaAs quantum dot stacks Hofer, S.
 2002
 13 2-4 p. 190-193
4 p.
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178 Photo-current spectroscopy of modulation doped InAs self-assembled quantum dots Hawrylak, P
 2002
 13 2-4 p. 246-250
5 p.
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179 Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy Mozume, T
 2002
 13 2-4 p. 361-365
5 p.
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180 Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures Husberg, O
 2002
 13 2-4 p. 1090-1093
4 p.
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181 Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots Kiravittaya, S
 2002
 13 2-4 p. 224-228
5 p.
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182 Photoluminescence of GaAs/AlGaAs micro-tubes containing uniaxially strained quantum wells Kubota, K
 2002
 13 2-4 p. 313-316
4 p.
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183 Photoluminescence spectroscopy on single CdSe quantum dots in a semimagnetic ZnMnSe matrix Schömig, H
 2002
 13 2-4 p. 512-515
4 p.
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184 Photoluminescence up-conversion of single InAs/GaAs quantum dots Cassabois, G.
 2002
 13 2-4 p. 105-108
4 p.
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185 Piezoelectric effects in ultrahigh quality AlGaAs/GaAs single quantum wire Liu, Xing-Quan
 2002
 13 2-4 p. 194-198
5 p.
 artikel
186 Polariton traps in semiconductor microcavities Baumberg, Jeremy J
 2002
 13 2-4 p. 385-389
5 p.
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187 Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots Humlı́ček, J
 2002
 13 2-4 p. 229-232
4 p.
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188 Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots Cortez, S
 2002
 13 2-4 p. 220-223
4 p.
 artikel
189 Polaron couplings in quantum dot molecules Verzelen, O
 2002
 13 2-4 p. 309-312
4 p.
 artikel
190 Polaron states in InAs/GaAs quantum dots: strong electron–phonon coupling regime Deleporte, E
 2002
 13 2-4 p. 155-160
6 p.
 artikel
191 Quantitative determination of the charge density on surface steps on semiconductors by high-resolution local scanning-tunneling spectroscopy Kemerink, M.
 2002
 13 2-4 p. 1159-1162
4 p.
 artikel
192 Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam Vitzethum, M.
 2002
 13 2-4 p. 143-146
4 p.
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193 Quantum dots for VCSEL applications at λ=1.3 μm Ledentsov, N
 2002
 13 2-4 p. 871-875
5 p.
 artikel
194 Quantum dot site-selection using in situ prepared nano-templates Williams, R.L
 2002
 13 2-4 p. 1200-1203
4 p.
 artikel
195 Quantum gates using tunneling electron spins of a quantum-dot chain Muto, S
 2002
 13 2-4 p. 616-619
4 p.
 artikel
196 Quantum mechanical repulsion of exciton levels in a disordered quantum well evidenced by near-field spectroscopy Intonti, Francesca
 2002
 13 2-4 p. 178-181
4 p.
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197 Quantum transport calculations for quantum cascade laser structures Lee, S.-C.
 2002
 13 2-4 p. 858-861
4 p.
 artikel
198 Radiative width of collective modes in a resonant Bragg reflector: the validity limit of superradiant mode Ikawa, Tomoe
 2002
 13 2-4 p. 463-466
4 p.
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199 Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growth temperature Tenne, D.A
 2002
 13 2-4 p. 199-202
4 p.
 artikel
200 Random 1D structures as filters for electrical and optical signals Krokhin, A
 2002
 13 2-4 p. 695-698
4 p.
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201 Random lasing from weakly scattering media; spectrum universality in DOO–PPV polymer films Polson, R.C
 2002
 13 2-4 p. 1240-1242
3 p.
 artikel
202 Rashba spin-splitting energies probed by anti-weak-localization analysis in symmetric and asymmetric InGaAs/InAlAs quantum wells Koga, Takaaki
 2002
 13 2-4 p. 542-546
5 p.
 artikel
203 Recent results in quantum cascade lasers and intersubband transitions in GaN/AlGaN multiple quantum wells Gmachl, C.
 2002
 13 2-4 p. 823-828
6 p.
 artikel
204 Reflection and transmission of light in the photonic band gap range of triangular lattice of Si nanopillars with 500 nm period Poborchii, Vladimir V.
 2002
 13 2-4 p. 1066-1069
4 p.
 artikel
205 Resonant states and THz lasing in SiGe quantum well structures δ-doped with boron Kagan, M.S
 2002
 13 2-4 p. 916-919
4 p.
 artikel
206 Resonant tunneling effect in a periodically modulated electrical field Vitusevich, S.A
 2002
 13 2-4 p. 811-814
4 p.
 artikel
207 Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure Kamiya, I
 2002
 13 2-4 p. 131-133
3 p.
 artikel
208 Reversibility of the effects of hydrogen on the electronic properties of In x Ga1−x As1−y N y von Högersthal, G.Baldassarri Höger
 2002
 13 2-4 p. 1082-1085
4 p.
 artikel
209 Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (775)B GaAs substrates by MBE Ohno, Y
 2002
 13 2-4 p. 892-895
4 p.
 artikel
210 Segregation effects on the optical properties of (InAs)/(GaSb) superlattices Magri, Rita
 2002
 13 2-4 p. 325-328
4 p.
 artikel
211 Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures Akabori, Masashi
 2002
 13 2-4 p. 446-450
5 p.
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212 Self-absorption effects in a LEC with low Stokes shift Wenzl, F.P
 2002
 13 2-4 p. 1251-1254
4 p.
 artikel
213 Self-assembled guanine ribbons as wide-bandgap semiconductors Calzolari, A.
 2002
 13 2-4 p. 1236-1239
4 p.
 artikel
214 Semiconductor tubes, rods and rings of nanometer and micrometer dimension Schmidt, O.G.
 2002
 13 2-4 p. 969-973
5 p.
 artikel
215 Shape evolution of Ge domes on Si (001) during Si capping Rastelli, A
 2002
 13 2-4 p. 1008-1012
5 p.
 artikel
216 Shape induced anisotropic elastic relaxation in InP/In0.48Ga0.52P quantum dots Schmidbauer, M.
 2002
 13 2-4 p. 1139-1142
4 p.
 artikel
217 Single-particle relaxation times in a pseudomorphic In0.7Ga0.3 As/In0.52Al0.48As QW-HEMT structure with (411) A super-flat interfaces grown by MBE Kitada, Takahiro
 2002
 13 2-4 p. 657-662
6 p.
 artikel
218 Size-selective optically excited capacitance transient spectroscopy of InAs/GaAs quantum dots Kapteyn, C.M.A
 2002
 13 2-4 p. 259-262
4 p.
 artikel
219 Spatially site-controlled InAs quantum dot lattices Kohmoto, S
 2002
 13 2-4 p. 1131-1134
4 p.
 artikel
220 Spectroscopy of positively and negatively charged quantum dots: wave function extent of holes and electrons Regelman, D.V.
 2002
 13 2-4 p. 114-118
5 p.
 artikel
221 Spin alignment of electrons in PbTe/(Pb,Eu)Te nanostructures Grabecki, G
 2002
 13 2-4 p. 649-652
4 p.
 artikel
222 Spin-dependent single-hole tunneling in self-assembled silicon quantum rings Bagraev, N.T
 2002
 13 2-4 p. 765-768
4 p.
 artikel
223 Spin interference and Fabry–Pérot resonances in ferromagnet–semiconductor–ferromagnet devices Matsuyama, T
 2002
 13 2-4 p. 577-581
5 p.
 artikel
224 Spin lifetimes and g-factor tuning in Si/SiGe quantum wells Jantsch, W
 2002
 13 2-4 p. 504-507
4 p.
 artikel
225 Spin orientation of electrons by lateral electric field in 2D system without inversion symmetry Chaplik, A.V.
 2002
 13 2-4 p. 744-747
4 p.
 artikel
226 Spin polarization and transition from metallic to insulating behavior in 2D systems Tutuc, E
 2002
 13 2-4 p. 748-751
4 p.
 artikel
227 Spin polarization dynamics in n-doped InAs/GaAs quantum dots Cortez, S.
 2002
 13 2-4 p. 508-511
4 p.
 artikel
228 Spin polarization spectra of strained superlattices Andreev, A.D
 2002
 13 2-4 p. 556-559
4 p.
 artikel
229 Spin-resolved transport in single-electron tunneling Könemann, J
 2002
 13 2-4 p. 675-678
4 p.
 artikel
230 Spontaneous spin-splitting observed in resonant tunneling diode with narrow band-gap asymmetric quantum well Yamada, S.
 2002
 13 2-4 p. 815-818
4 p.
 artikel
231 State-filling and renormalization in charged InGaAs/GaAs quantum dots Guffarth, F
 2002
 13 2-4 p. 278-282
5 p.
 artikel
232 Step-bunching and strain effects in Si1−x Ge x layers and superlattices on vicinal Si(001) Mühlberger, M.
 2002
 13 2-4 p. 990-994
5 p.
 artikel
233 Stimulated emission of terahertz acoustic phonons as a result of action of nonequilibrium phonons upon the localized exciton ensemble Onishchenko, E.E
 2002
 13 2-4 p. 321-324
4 p.
 artikel
234 Strain relaxation in high-mobility InAs inserted-channel heterostructures with metamorphic buffer Mendach, S
 2002
 13 2-4 p. 1204-1207
4 p.
 artikel
235 Strategies for reducing the emission wavelength of GaAs–AlAs quantum cascade lasers Wilson, L.R.
 2002
 13 2-4 p. 835-839
5 p.
 artikel
236 Strong coupling of CdS quantum dots to confined photonic modes in ZnSe-based microcavities Tawara, T.
 2002
 13 2-4 p. 403-407
5 p.
 artikel
237 Strong graded interface related piezoelectric polarization weakening effects on exciton confinement in single In x Ga1−x N/GaN quantum wells Caetano, E.W.S
 2002
 13 2-4 p. 1106-1110
5 p.
 artikel
238 Structural and optical characterization of intrinsic GaN nanocolumns Sánchez-Páramo, J.
 2002
 13 2-4 p. 1070-1073
4 p.
 artikel
239 Structure and ordering of GaN quantum dot multilayer investigated by X-ray grazing incidence techniques Chamard, V.
 2002
 13 2-4 p. 1115-1118
4 p.
 artikel
240 Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure Kawaharazuka, A.
 2002
 13 2-4 p. 663-666
4 p.
 artikel
241 Subject index 2002
 13 2-4 p. XXIV-XXIX
nvt p.
 artikel
242 Superlattice model to describe inter-molecular wave function overlap in polydiacetylene crystalline films Munekata, H.
 2002
 13 2-4 p. 1255-1258
4 p.
 artikel
243 Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices Reitzenstein, S
 2002
 13 2-4 p. 954-956
3 p.
 artikel
244 Tailoring photon emission statistics of a single quantum box for quantum communications Robert, I
 2002
 13 2-4 p. 606-609
4 p.
 artikel
245 Temperature-induced breakdown of stationary electric field domains in superlattices Sánchez, David
 2002
 13 2-4 p. 798-801
4 p.
 artikel
246 Template-induced structural phase transition of GeS2 and GeSe2 in organic–inorganic hybrid mesostructures Klar, P.J
 2002
 13 2-4 p. 1259-1263
5 p.
 artikel
247 Terahertz interminiband emission and magneto-transport measurements from a quantum cascade chirped superlattice Blaser, Stéphane
 2002
 13 2-4 p. 854-857
4 p.
 artikel
248 Terahertz quantum cascade emitters based on AlAs/GaAs Ulrich, J
 2002
 13 2-4 p. 900-903
4 p.
 artikel
249 The advantages of p-type and design methodologies for Si1−x Ge x far-infrared (terahertz) quantum well infrared photodetectors (QWIPs) Gadir, M.A.
 2002
 13 2-4 p. 1055-1058
4 p.
 artikel
250 The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots Andreev, A.D
 2002
 13 2-4 p. 1094-1097
4 p.
 artikel
251 The influence of carrier diffusion on the formation of charged excitons in InAs/GaAs quantum dots Karlsson, K.F.
 2002
 13 2-4 p. 101-104
4 p.
 artikel
252 The performance of hybrid-molecular architectures with current CMOS technology as a reference Stadler, R
 2002
 13 2-4 p. 930-933
4 p.
 artikel
253 Thin SiO x layers embedded in single crystalline silicon Sticht, A.
 2002
 13 2-4 p. 978-981
4 p.
 artikel
254 THz intersubband dynamics in p-Si/SiGe quantum well structures Pidgeon, C.R
 2002
 13 2-4 p. 904-907
4 p.
 artikel
255 Time-resolved imaging by using micro-photoluminescence measurement and sum frequency mixing Nagamune, Yasushi
 2002
 13 2-4 p. 366-369
4 p.
 artikel
256 Time-resolved photoluminescence near Fermi level in a field-induced quantum dot lattice Hammura, Kiyotaka
 2002
 13 2-4 p. 251-254
4 p.
 artikel
257 Time resolved stimulated emission in excitonic semiconductor microcavities Bloch, J
 2002
 13 2-4 p. 390-393
4 p.
 artikel
258 Topology effects on local electronic properties and on the conductance of molecular structures Latgé, A
 2002
 13 2-4 p. 1264-1267
4 p.
 artikel
259 Transfer of spin orientation into electric current in quantum wells Ganichev, S.D
 2002
 13 2-4 p. 552-555
4 p.
 artikel
260 Transient high-field transport and electro-optical properties of Al x Ga1−x As-grading-structures Robledo, L
 2002
 13 2-4 p. 708-710
3 p.
 artikel
261 Transport in quantum dot arrays Mori, N
 2002
 13 2-4 p. 667-670
4 p.
 artikel
262 Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots Haendel, K.-M
 2002
 13 2-4 p. 757-760
4 p.
 artikel
263 Transport of a two-dimensional electron gas in a lattice of diffusive and thermalizing scatterers Kvon, Z.D
 2002
 13 2-4 p. 752-756
5 p.
 artikel
264 Tunable mid-IR emission using a novel quantum dot–quantum well coupled system Child, R.A.
 2002
 13 2-4 p. 241-245
5 p.
 artikel
265 Tuned exciton kinetics in self-organized InGaAs/GaAs quantum dots Born, H.
 2002
 13 2-4 p. 233-236
4 p.
 artikel
266 Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures Tanaka, M
 2002
 13 2-4 p. 495-503
9 p.
 artikel
267 Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering Yamashita, K
 2002
 13 2-4 p. 329-332
4 p.
 artikel
268 Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling Matsumura, N
 2002
 13 2-4 p. 1168-1171
4 p.
 artikel
269 Two-wave X-ray optical diagnostics of Ge x Si1−x /Si modulation-doped heterostructures Touryanski, A.G
 2002
 13 2-4 p. 1063-1065
3 p.
 artikel
270 Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy Nakajima, F
 2002
 13 2-4 p. 703-707
5 p.
 artikel
271 Ultrafast coherent nonlinear dynamics of intersubband excitations in a quasi-two-dimensional electron gas Woerner, M
 2002
 13 2-4 p. 477-480
4 p.
 artikel
272 Ultra fast decay of enhanced degenerate-four-wave mixing of multiple GaAs thin layers Ishihara, Hajime
 2002
 13 2-4 p. 790-793
4 p.
 artikel
273 Ultrafast intersubband scattering of holes in p-type modulation-doped Si1−x Ge x /Si multiple quantum wells Woerner, M
 2002
 13 2-4 p. 485-488
4 p.
 artikel
274 Unimodal dome-shaped island population of Ge/Si (001) by step-wise growth in UHV-CVD Zela, V
 2002
 13 2-4 p. 1013-1017
5 p.
 artikel
275 Valence band barrier at (Ga,Mn)As/GaAs interfaces Ohno, Y
 2002
 13 2-4 p. 521-524
4 p.
 artikel
276 Vertical field effect transistors realized by cleaved-edge overgrowth Ertl, F
 2002
 13 2-4 p. 920-924
5 p.
 artikel
277 Voltage-switchable Bragg reflector for planar optical waveguides Frank, W.R
 2002
 13 2-4 p. 377-380
4 p.
 artikel
278 Wave vector dispersion of excitations of the two-dimensional electron gas from light scattering using a grating coupler Kristukat, C.
 2002
 13 2-4 p. 341-344
4 p.
 artikel
279 White light from blue: white emitting organic LEDs based on spin coated blends of blue-emitting molecules Mazzeo, M.
 2002
 13 2-4 p. 1243-1246
4 p.
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                             279 gevonden resultaten
 
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