nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Capacitance-voltage investigation of low residual carrier density in InAs/GaSb superlattice infrared detectors
|
Schmidt, Johannes |
|
2017 |
84 |
C |
p. 3-6 4 p. |
artikel |
2 |
Control over the optical and electronic performance of GaAs/AlGaAs QWIPs grown by production MBE
|
Roodenko, K. |
|
2017 |
84 |
C |
p. 33-37 5 p. |
artikel |
3 |
Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications
|
Roodenko, K. |
|
2017 |
84 |
C |
p. 38-42 5 p. |
artikel |
4 |
IFC:Editorial Board and Aims and Scope
|
|
|
2017 |
84 |
C |
p. IFC- 1 p. |
artikel |
5 |
Infrared photodetectors based on graphene van der Waals heterostructures
|
Ryzhii, V. |
|
2017 |
84 |
C |
p. 72-81 10 p. |
artikel |
6 |
InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection
|
Uliel, Y. |
|
2017 |
84 |
C |
p. 63-71 9 p. |
artikel |
7 |
Investigation of hillocks formation on (100) HgCdTe layers grown by MOCVD on GaAs epi-ready substrates
|
Kębłowski, A. |
|
2017 |
84 |
C |
p. 87-93 7 p. |
artikel |
8 |
Low frequency 1/f noise on QWIPs, nBn, and superlattice focal plane array
|
Rafol, S.B. |
|
2017 |
84 |
C |
p. 50-57 8 p. |
artikel |
9 |
Manufacturability of type-II InAs/GaSb superlattice detectors for infrared imaging
|
Höglund, L. |
|
2017 |
84 |
C |
p. 28-32 5 p. |
artikel |
10 |
Modeling tools for design of type-II superlattice photodetectors
|
Asplund, Carl |
|
2017 |
84 |
C |
p. 21-27 7 p. |
artikel |
11 |
Preface
|
Sarusi, Gabby |
|
2017 |
84 |
C |
p. 1-2 2 p. |
artikel |
12 |
Relative performance analysis of IR FPA technologies from the perspective of system level performance
|
Haran, Terence L. |
|
2017 |
84 |
C |
p. 7-20 14 p. |
artikel |
13 |
Resonant detectors and focal plane arrays for infrared detection
|
Choi, K.K. |
|
2017 |
84 |
C |
p. 94-101 8 p. |
artikel |
14 |
Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector
|
Cohen-Elias, D. |
|
2017 |
84 |
C |
p. 82-86 5 p. |
artikel |
15 |
Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface
|
Wittenberg, Vladimir |
|
2017 |
84 |
C |
p. 43-49 7 p. |
artikel |
16 |
Theoretical utmost performance of the (100) long-wave HgCdTe Auger suppressed photodetectors grown on GaAs
|
Martyniuk, P. |
|
2017 |
84 |
C |
p. 58-62 5 p. |
artikel |
17 |
Type-II superlattice hole effective masses
|
Ting, David Z. |
|
2017 |
84 |
C |
p. 102-106 5 p. |
artikel |