| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector
|
Sun, J.
|
|
2015
|
70 |
C |
p. 25-29
5 p.
|
artikel
|
| 2 |
Chemical and physical passivation of type II strained-layer superlattice devices by means of thiolated self-assembled monolayers and polymer encapsulates
|
Henry, Nathan C.
|
|
2015
|
70 |
C |
p. 48-52
5 p.
|
artikel
|
| 3 |
Dark current in antimony-based mid-infrared interband cascade infrared photodetectors
|
Tian, Z.-B.
|
|
2015
|
70 |
C |
p. 44-47
4 p.
|
artikel
|
| 4 |
Dual color longwave InAs/GaSb type-II strained layer superlattice detectors
|
Plis, E.
|
|
2015
|
70 |
C |
p. 93-98
6 p.
|
artikel
|
| 5 |
Dynamic infrared imaging for skin cancer screening
|
Godoy, Sebastián E.
|
|
2015
|
70 |
C |
p. 147-152
6 p.
|
artikel
|
| 6 |
Electromagnetic modeling and resonant detectors and arrays
|
Choi, K.K.
|
|
2015
|
70 |
C |
p. 153-161
9 p.
|
artikel
|
| 7 |
Electronic structure of InAs/GaSb superlattice for the modelling of MWIR pin photodiode
|
Imbert, J.
|
|
2015
|
70 |
C |
p. 81-86
6 p.
|
artikel
|
| 8 |
Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations
|
Arslan, Y.
|
|
2015
|
70 |
C |
p. 134-137
4 p.
|
artikel
|
| 9 |
Flat-band pn-based unipolar barrier photodetector
|
Sidor, D.E.
|
|
2015
|
70 |
C |
p. 111-114
4 p.
|
artikel
|
| 10 |
1/f Noise QWIPs and nBn detectors
|
Gunapala, S.D.
|
|
2015
|
70 |
C |
p. 115-120
6 p.
|
artikel
|
| 11 |
GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface
|
Marshall, A.R.J.
|
|
2015
|
70 |
C |
p. 168-170
3 p.
|
artikel
|
| 12 |
Growth optimization studies to develop InAs/GaInSb superlattice materials for very long wavelength infrared detection
|
Haugan, H.J.
|
|
2015
|
70 |
C |
p. 99-102
4 p.
|
artikel
|
| 13 |
High image quality type-II superlattice detector for 3.3μm detection of volatile organic compounds
|
Malm, Hedda
|
|
2015
|
70 |
C |
p. 34-39
6 p.
|
artikel
|
| 14 |
IFC:Editorial Board and Aims and Scope
|
|
|
2015
|
70 |
C |
p. IFC-
1 p.
|
artikel
|
| 15 |
InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions
|
Unil Perera, A.G.
|
|
2015
|
70 |
C |
p. 15-19
5 p.
|
artikel
|
| 16 |
InAs/GaSb superlattice infrared detectors
|
Rehm, Robert
|
|
2015
|
70 |
C |
p. 87-92
6 p.
|
artikel
|
| 17 |
InAsSbP quantum dot mid-IR photodetectors operating at room temperature
|
Harutyunyan, V.G.
|
|
2015
|
70 |
C |
p. 12-14
3 p.
|
artikel
|
| 18 |
Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices
|
Höglund, L.
|
|
2015
|
70 |
C |
p. 62-65
4 p.
|
artikel
|
| 19 |
Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes
|
Giard, E.
|
|
2015
|
70 |
C |
p. 103-106
4 p.
|
artikel
|
| 20 |
Interband cascade infrared photodetectors with long and very-long cutoff wavelengths
|
Lotfi, Hossein
|
|
2015
|
70 |
C |
p. 162-167
6 p.
|
artikel
|
| 21 |
Low operating bias InAs/GaSb strain layer superlattice LWIR detector
|
Baril, Neil
|
|
2015
|
70 |
C |
p. 58-61
4 p.
|
artikel
|
| 22 |
Low pitch LWIR QWIPs: Performance level and image quality
|
Alexandru, Nedelcu
|
|
2015
|
70 |
C |
p. 129-133
5 p.
|
artikel
|
| 23 |
Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice
|
Katayama, Haruyoshi
|
|
2015
|
70 |
C |
p. 53-57
5 p.
|
artikel
|
| 24 |
Message from the Conference Chairs
|
Krishna, Sanjay
|
|
2015
|
70 |
C |
p. 1-
1 p.
|
artikel
|
| 25 |
Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction
|
Delmas, M.
|
|
2015
|
70 |
C |
p. 76-80
5 p.
|
artikel
|
| 26 |
Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)
|
Srinivasan, T.
|
|
2015
|
70 |
C |
p. 6-11
6 p.
|
artikel
|
| 27 |
MWIR barrier detectors versus HgCdTe photodiodes
|
Martyniuk, P.
|
|
2015
|
70 |
C |
p. 125-128
4 p.
|
artikel
|
| 28 |
Photocapacitance study of GaSb: In, As for defect analysis in InAs/GaSb type-II strained layer superlattices
|
Klein, B.
|
|
2015
|
70 |
C |
p. 40-43
4 p.
|
artikel
|
| 29 |
Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization
|
Klein, B.
|
|
2015
|
70 |
C |
p. 66-69
4 p.
|
artikel
|
| 30 |
Progress in resonator quantum well infrared photodetector (R-QWIP) focal plane arrays
|
DeCuir Jr., Eric A.
|
|
2015
|
70 |
C |
p. 138-146
9 p.
|
artikel
|
| 31 |
Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector
|
Treider, L.A.
|
|
2015
|
70 |
C |
p. 70-75
6 p.
|
artikel
|
| 32 |
Reprint of “Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – grown on GaAs, using an interfacial misfit array, and on native GaSb”
|
Craig, A.P.
|
|
2015
|
70 |
C |
p. 107-110
4 p.
|
artikel
|
| 33 |
Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
|
Soibel, Alexander
|
|
2015
|
70 |
C |
p. 121-124
4 p.
|
artikel
|
| 34 |
The sub-monolayer quantum dot infrared photodetector revisited
|
Ting, David Z.-Y.
|
|
2015
|
70 |
C |
p. 20-24
5 p.
|
artikel
|
| 35 |
Two-photon quantum well infrared photodetectors below 6THz
|
Franke, Carsten
|
|
2015
|
70 |
C |
p. 30-33
4 p.
|
artikel
|
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