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                             20 results found
no title author magazine year volume issue page(s) type
1 A safety system for gas source molecular beam epitaxy Biswas, Dhrubes
1991
4 6 p. 20-24
5 p.
article
2 At last an in-situ process monitor for MOVPE Benferhat, R.
1991
4 6 p. 32-35
4 p.
article
3 1992 diary 1991
4 6 p. 64-67
4 p.
article
4 1992 diary 1991
4 6 p. 70-
1 p.
article
5 Editorial 1991
4 6 p. 2-
1 p.
article
6 Hot carriers, modulated structures and properties of 2D systems 1991
4 6 p. 54-59
6 p.
article
7 Hydride vapour phase epitaxial regrowth - a renaissance for VPE? 1991
4 6 p. 45-46
2 p.
article
8 III–Vs review 1991 MOVPE equipment supplier directory 1991
4 6 p. 60-63
4 p.
article
9 Index 1991
4 6 p. 72-
1 p.
article
10 In-situ observation of HB GaAs crystal growth Hsu, J.T.
1991
4 6 p. 26-27
2 p.
article
11 Light-assisted CVD for III–V device technology: an industrial process 1991
4 6 p. 16-18
3 p.
article
12 3M develops blue-green semiconductor laser diode 1991
4 6 p. 14-
1 p.
article
13 Metaleurop special metals 1991
4 6 p. 48-49
2 p.
article
14 MIMIC shifts into high gear 1991
4 6 p. 38-42
5 p.
article
15 Optical wave-guide devices in GaAs at SINTEF DELAB 1991
4 6 p. 28-30
3 p.
article
16 Semi GaAs standards committee 1991
4 6 p. 36-38
3 p.
article
17 The 13th GaAs IC symposium optimism at monterey 1991
4 6 p. 12-13
2 p.
article
18 Update 1991
4 6 p. 4-11
8 p.
article
19 US HBT pioneer Peter Asbeck talks to Jo Ann McDonald, US Correspondent 1991
4 6 p. 50-52
3 p.
article
20 30 years of research at the institute of semiconductor electronics 1991
4 6 p. 43-44
2 p.
article
                             20 results found
 
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