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                             76 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advertiser index 1991
4 1 p. 82-
1 p.
artikel
2 Air products spins off Diamonex Inc 1991
4 1 p. 14-
1 p.
artikel
3 Aluminium precursor enables n-type AlGaAs layers 1991
4 1 p. 12-
1 p.
artikel
4 Apologies from John P Kummer 1991
4 1 p. 14-
1 p.
artikel
5 A report on the 6th international conference on molecular beam epitaxy Henini, Mohamed
1991
4 1 p. 22-
1 p.
artikel
6 Boron nitride films deposited by ECR a US-Soviet project 1991
4 1 p. 38-
1 p.
artikel
7 Bridgman method yields lower dislocation GaAs crystals 1991
4 1 p. 13-
1 p.
artikel
8 Cadmium telluride crystals from Sumitomo 1991
4 1 p. 12-
1 p.
artikel
9 Chinese study structure of GaAs on Si 1991
4 1 p. 6-
1 p.
artikel
10 Contactless measurement systems for semiconductor wafers 1991
4 1 p. 8-
1 p.
artikel
11 CVC low cost MBE and e-beam 1991
4 1 p. 18-
1 p.
artikel
12 Diary 1991
4 1 p. 55-
1 p.
artikel
13 DKPE-A strong new name in MBE Tom Cooper, General Manager, MBE Operations at Varian Szweda, Roy
1991
4 1 p. 20-
1 p.
artikel
14 Double crucible for growth of larger superconducting crystals 1991
4 1 p. 8-
1 p.
artikel
15 Editorial Board 1991
4 1 p. 3-
1 p.
artikel
16 Encyclopedia of electronics 2nd Edition co-edited by Stan Gibilisco and Neil Sclater 1991
4 1 p. 66-
1 p.
artikel
17 Epiquip in Swedish consortium 1991
4 1 p. 31-
1 p.
artikel
18 Epitronics receive MOCVD reactors 1991
4 1 p. 15-
1 p.
artikel
19 Esprit “planet” 1991
4 1 p. 6-
1 p.
artikel
20 ESPRIT reviews projects on compound semiconductors at Jersey Mun, J.
1991
4 1 p. 28-
1 p.
artikel
21 Film stress measurement at high temperatures 1991
4 1 p. 12-
1 p.
artikel
22 Five years joint research on GaAs electronics in Germany R. Diehl,
1991
4 1 p. 26-
1 p.
artikel
23 GaAs the force multiplier - A GaAs Manhattan project for the UK? Szweda, Roy
1991
4 1 p. 4-
1 p.
artikel
24 GigaBit logic data book 1991
4 1 p. 14-
1 p.
artikel
25 Government to spend $144 million for fibreoptics in 1991 1991
4 1 p. 17-
1 p.
artikel
26 H-GaAs IC process 1991
4 1 p. 6-
1 p.
artikel
27 High precision end-point detector 1991
4 1 p. 31-
1 p.
artikel
28 High speed semiconductor devices 1991
4 1 p. 65-
1 p.
artikel
29 III–Vs review 1991 contract analysis suppliers directory 1991
4 1 p. 68-
1 p.
artikel
30 III-Vs review 1991 epitaxial equipment directory 1991
4 1 p. 76-
1 p.
artikel
31 III-Vs review 1991 gas monitor suppliers directory 1991
4 1 p. 74-
1 p.
artikel
32 III-Vs review 1991 gas scrubber suppliers directory 1991
4 1 p. 73-
1 p.
artikel
33 III-Vs review 1991 source materials suppliers directory 1991
4 1 p. 80-
1 p.
artikel
34 III-Vs review 1991 wafer supplier directory 1991
4 1 p. 70-
1 p.
artikel
35 InGaAs epiwafer for optodiodes 1991
4 1 p. 12-
1 p.
artikel
36 Integrated within an electronics business Vaughan, John
1991
4 1 p. 34-
1 p.
artikel
37 Ion beam assisted (IBA) processing services 1991
4 1 p. 13-
1 p.
artikel
38 Johnson Matthey closes trail facility 1991
4 1 p. 14-
1 p.
artikel
39 Laser processing of materials in Japan: Research, development and applications 1991
4 1 p. 65-
1 p.
artikel
40 Matheson dual-stage regulator 1991
4 1 p. 16-
1 p.
artikel
41 MBE in China Meiying, Kong
1991
4 1 p. 46-
1 p.
artikel
42 Megatech appointed by Rigaku/USA 1991
4 1 p. 10-
1 p.
artikel
43 MIL-STD 883C compliance 1991
4 1 p. 16-
1 p.
artikel
44 Mixed fortunes forecast for optoelectronics 1991
4 1 p. 17-
1 p.
artikel
45 Mixed signal ASIC market report 1991
4 1 p. 6-
1 p.
artikel
46 Modern GaAs processing methods 1991
4 1 p. 65-
1 p.
artikel
47 New photodiode production process 1991
4 1 p. 16-
1 p.
artikel
48 New standards of resolution 1991
4 1 p. 18-
1 p.
artikel
49 Non-contamination in semiconductor manufacturing 1991
4 1 p. 14-
1 p.
artikel
50 Opportunity knocks what the USA has to offer in digital GaAs fab services 1991
4 1 p. 58-
1 p.
artikel
51 Overheard at conferences 1991
4 1 p. 32-
1 p.
artikel
52 PA consulting group makes major advance in photonic switching 1991
4 1 p. 14-
1 p.
artikel
53 Plasma technology equipment for OIEC research 1991
4 1 p. 18-
1 p.
artikel
54 POEM at Princeton 1991
4 1 p. 18-
1 p.
artikel
55 Rapid growth predicted for nonlinear optical materials 1991
4 1 p. 8-
1 p.
artikel
56 Rockwell announces switch to toxic gas replacements 1991
4 1 p. 10-
1 p.
artikel
57 Rodel adds wafer polish felt factory 1991
4 1 p. 18-
1 p.
artikel
58 SERC funds shortage spells end for UK MBE unit? 1991
4 1 p. 8-
1 p.
artikel
59 Spatially resolved photoluminescence as a process control tool for compound semiconductors Chris Moore,
1991
4 1 p. 40-
1 p.
artikel
60 Spire announces epitaxially grown SiGe alloys 1991
4 1 p. 10-
1 p.
artikel
61 Spire's large area implant service 1991
4 1 p. 10-
1 p.
artikel
62 STS enhanced plasma system 1991
4 1 p. 16-
1 p.
artikel
63 Tencor instruments introduces new generation surfscan 1991
4 1 p. 10-
1 p.
artikel
64 The grandfather of the JFET 1991
4 1 p. 62-
1 p.
artikel
65 The jazz standard Jay, Paul
1991
4 1 p. 49-
1 p.
artikel
66 The market for semi-insulating LEC wafers Lande, Simon
1991
4 1 p. 44-
1 p.
artikel
67 Third international conference on indium phosphide & related materials 1991
4 1 p. 82-
1 p.
artikel
68 Thomson-CSF and Vitesse in GaAs co-venture 1991
4 1 p. 6-
1 p.
artikel
69 6th semi-insulating materials conference Jay, Paul
1991
4 1 p. 30-
1 p.
artikel
70 TriQuint awarded $2.65 million contract 1991
4 1 p. 16-
1 p.
artikel
71 Tri-Quint software improves circuit design 1991
4 1 p. 16-
1 p.
artikel
72 Triquint to supply Motorola 1991
4 1 p. 16-
1 p.
artikel
73 UET news 1991
4 1 p. 31-
1 p.
artikel
74 US laboratory develops ECR for II-VIs 1991
4 1 p. 15-
1 p.
artikel
75 Vitesse clears the board! 1991
4 1 p. 6-
1 p.
artikel
76 Working with nine different GaAs IC foundaries Stoneham, E.B.
1991
4 1 p. 52-
1 p.
artikel
                             76 gevonden resultaten
 
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