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Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
45 gevonden resultaten
| nr | titel | auteur | tijdschrift | jaar | jaarg. | afl. | pagina('s) | type |
| 1 | ANADIGICS' InGaP HBTs for OC-192 DWDM |
2000 |
13 | 5 |
p. 8- 1 p. |
artikel |
||
| 2 | AXT launches VCSEL wafers |
2000 |
13 | 5 |
p. 22- 1 p. |
artikel |
||
| 3 | BMs's 0.25 μm SiGe; 0.18 μm to use copper |
2000 |
13 | 5 |
p. 12- 1 p. |
artikel |
||
| 4 | Brief |
2000 |
13 | 5 |
p. 15- 1 p. |
artikel |
||
| 5 | Brief |
2000 |
13 | 5 |
p. 15- 1 p. |
artikel |
||
| 6 | Brief |
2000 |
13 | 5 |
p. 22- 1 p. |
artikel |
||
| 7 | Corning to invest US$270m |
2000 |
13 | 5 |
p. 27- 1 p. |
artikel |
||
| 8 | Diary of 2000 events |
2000 |
13 | 5 |
p. 53- 1 p. |
artikel |
||
| 9 | Editorial |
2000 |
13 | 5 |
p. 2- 1 p. |
artikel |
||
| 10 | 28% efficient InGaN LED |
2000 |
13 | 5 |
p. 18- 1 p. |
artikel |
||
| 11 | 26% efficient triple-junction cells |
2000 |
13 | 5 |
p. 30- 1 p. |
artikel |
||
| 12 | EMCORE expands by 400% |
2000 |
13 | 5 |
p. 15- 1 p. |
artikel |
||
| 13 | EMF expands MO capacity, sells reactors |
2000 |
13 | 5 |
p. 17- 1 p. |
artikel |
||
| 14 | Filtronic's GaAs fab nears first orders |
2000 |
13 | 5 |
p. 10- 1 p. |
artikel |
||
| 15 | First electrically powered organic laser |
2000 |
13 | 5 |
p. 22- 1 p. |
artikel |
||
| 16 | First GaN MMIC |
2000 |
13 | 5 |
p. 21- 1 p. |
artikel |
||
| 17 | First surface amount LED plant in NOrth America |
2000 |
13 | 5 |
p. 22- 1 p. |
artikel |
||
| 18 | GaAs briefs |
2000 |
13 | 5 |
p. 10- 1 p. |
artikel |
||
| 19 | GaN substrate cuts defects 100-fold |
2000 |
13 | 5 |
p. 21- 1 p. |
artikel |
||
| 20 | GCS' InGaP HBT wafers for Stanford |
2000 |
13 | 5 |
p. 8- 1 p. |
artikel |
||
| 21 | Integrated SOI and SiGe |
2000 |
13 | 5 |
p. 12- 1 p. |
artikel |
||
| 22 | JDSU and SDL in US$41bn merger |
2000 |
13 | 5 |
p. 27- 1 p. |
artikel |
||
| 23 | Larger wafers boosting GaAs and InP electronics |
Telford, Mark |
2000 |
13 | 5 |
p. 32-37 6 p. |
artikel |
|
| 24 | Largest PV fab opens |
2000 |
13 | 5 |
p. 30- 1 p. |
artikel |
||
| 25 | Lucent licenses quantum cascade laser to AOI |
2000 |
13 | 5 |
p. 24- 1 p. |
artikel |
||
| 26 | Lucent to spin off its microelectronics business |
2000 |
13 | 5 |
p. 24- 1 p. |
artikel |
||
| 27 | Lumileds forms new components business unit |
2000 |
13 | 5 |
p. 21- 1 p. |
artikel |
||
| 28 | Microsemi's first GaAs RFICs |
2000 |
13 | 5 |
p. 10- 1 p. |
artikel |
||
| 29 | MOCVD briefs |
2000 |
13 | 5 |
p. 17- 1 p. |
artikel |
||
| 30 | News update: The latest news from the advanced semiconductor industry worldwide |
2000 |
13 | 5 |
p. 4- 1 p. |
artikel |
||
| 31 | Nortel/Corning merger off |
2000 |
13 | 5 |
p. 29- 1 p. |
artikel |
||
| 32 | Nova's 1.3 μm VCSEL |
2000 |
13 | 5 |
p. 24- 1 p. |
artikel |
||
| 33 | Opto brief |
2000 |
13 | 5 |
p. 29- 1 p. |
artikel |
||
| 34 | Opto briefs |
2000 |
13 | 5 |
p. 21- 1 p. |
artikel |
||
| 35 | Picogiga orders first Riber MBE 7000s to double capacity |
2000 |
13 | 5 |
p. 15- 1 p. |
artikel |
||
| 36 | Poly SiC patent |
2000 |
13 | 5 |
p. 18- 1 p. |
artikel |
||
| 37 | Production etch processing for GaAs |
Szweda, Roy |
2000 |
13 | 5 |
p. 48-52 5 p. |
artikel |
|
| 38 | Record space cell efficiency of 29% |
2000 |
13 | 5 |
p. 30- 1 p. |
artikel |
||
| 39 | Relieving the strain: from GaAs-on-Si to InP-on-GaAs |
Szweda, Roy |
2000 |
13 | 5 |
p. 55- 1 p. |
artikel |
|
| 40 | SiC briefs |
2000 |
13 | 5 |
p. 18- 1 p. |
artikel |
||
| 41 | Sige briefs |
2000 |
13 | 5 |
p. 12- 1 p. |
artikel |
||
| 42 | Southampton photonics start-up attracts US$55m in funding |
2000 |
13 | 5 |
p. 27- 1 p. |
artikel |
||
| 43 | Substrate briefs |
2000 |
13 | 5 |
p. 18- 1 p. |
artikel |
||
| 44 | Taiwan extending epi from LEDs to lasers and RF ICs |
Telford, Mark |
2000 |
13 | 5 |
p. 42-46 5 p. |
artikel |
|
| 45 | Wide-bandgap electronics |
2000 |
13 | 5 |
p. 38-41 4 p. |
artikel |
45 gevonden resultaten