| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances on potential-driven growth of metal crystals from ionic liquids
|
Islam, Md. Mominul
|
|
|
|
4 |
p.
|
artikel
|
| 2 |
Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces
|
Gougousi, Theodosia
|
|
2016
|
|
4 |
p. 1-21
21 p.
|
artikel
|
| 3 |
Atomic-resolution structure imaging of defects and interfaces in compound semiconductors
|
Smith, David J.
|
|
|
|
4 |
p.
|
artikel
|
| 4 |
Benefits of chemical beam epitaxy for micro and optoelectronic applications
|
Benchimol, Jean-Louis
|
|
1996
|
|
4 |
p. 473-495
23 p.
|
artikel
|
| 5 |
CdTe-based crystals with Mg, Se, or Mn as materials for X and gamma ray detectors: Selected physical properties
|
Mycielski, Andrzej
|
|
|
|
4 |
p.
|
artikel
|
| 6 |
Chemical processing of rare earth chalcogenides
|
Kumta, Prashant N.
|
|
1991
|
|
4 |
p. 321-383
63 p.
|
artikel
|
| 7 |
Control of crystal growth in bridgman furnace
|
Batur, C.
|
|
1995
|
|
4 |
p. 217-236
20 p.
|
artikel
|
| 8 |
Corrigendum
|
|
|
1992
|
|
4 |
p. 257-
1 p.
|
artikel
|
| 9 |
Crystal chemistry and its significance on the growth of technological materials: Part II; Octahedrally coordinated compounds
|
Byrappa, K.
|
|
1992
|
|
4 |
p. 361-421
61 p.
|
artikel
|
| 10 |
Crystal chemistry and its significance on the growth of technological materials: Part I; Silicates, phosphates and their analogues
|
Byrappa, K.
|
|
1992
|
|
4 |
p. 269-359
91 p.
|
artikel
|
| 11 |
Crystal growth and structure of MnGa2Te4
|
Cannas, M.
|
|
1996
|
|
4 |
p. 171-183
13 p.
|
artikel
|
| 12 |
Crystallogenesis of biological macromolecules. Biological, microgravity and other physico-chemical aspects
|
Giege, R.
|
|
1995
|
|
4 |
p. 237-281
45 p.
|
artikel
|
| 13 |
Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties
|
Prete, Paola
|
|
|
|
4 |
p.
|
artikel
|
| 14 |
Doping limits in II–VI compounds — Challenges, problems and solutions
|
Desnica, U.V.
|
|
1998
|
|
4 |
p. 291-357
67 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
|
|
4 |
p.
|
artikel
|
| 16 |
Editorial Board
|
|
|
2018
|
|
4 |
p. ii
|
artikel
|
| 17 |
Editorial Board
|
|
|
|
|
4 |
p.
|
artikel
|
| 18 |
Editorial Board
|
|
|
|
|
4 |
p.
|
artikel
|
| 19 |
Editorial Board
|
|
|
|
|
4 |
p.
|
artikel
|
| 20 |
Editorial Board/Publication Information
|
|
|
2016
|
|
4 |
p. CO2-
1 p.
|
artikel
|
| 21 |
Editorial Board/Publication Information
|
|
|
2006
|
|
4 |
p. CO2-
1 p.
|
artikel
|
| 22 |
Editorial Board/Publication Information
|
|
|
2017
|
|
4 |
p. IFC
|
artikel
|
| 23 |
Editorial Board/Publication Information
|
|
|
2013
|
|
4 |
p. IFC-
1 p.
|
artikel
|
| 24 |
Editorial Board/Publication Information
|
|
|
2011
|
|
4 |
p. IFC-
1 p.
|
artikel
|
| 25 |
Editorial Board/Publication Information
|
|
|
2012
|
|
4 |
p. IFC-
1 p.
|
artikel
|
| 26 |
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
|
Li, Qiang
|
|
2017
|
|
4 |
p. 105-120
|
artikel
|
| 27 |
Growth and characterization of two-dimensional crystals for communication and energy applications
|
Tripathi, Laxmi Narayan
|
|
|
|
4 |
p.
|
artikel
|
| 28 |
Growth and properties of GaSb, Ga1-x InxSb and Ga1-xAlxSb epilayers by MOCVD
|
Juang, Fuh Shyang
|
|
1990
|
|
4 |
p. 285-312
28 p.
|
artikel
|
| 29 |
Hydrothermal epitaxy of BiFeO3 films on SrTiO3 substrates
|
Huang, A.
|
|
2011
|
|
4 |
p. 109-116
8 p.
|
artikel
|
| 30 |
Implications of crystal growth theories for mass crystallization: Application to crystallization of sucrose
|
Sgualdino, G.
|
|
1996
|
|
4 |
p. 225-245
21 p.
|
artikel
|
| 31 |
In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
|
Seifert, Werner
|
|
1996
|
|
4 |
p. 423-471
49 p.
|
artikel
|
| 32 |
In-situ optical microscopy observation of elementary steps on ice crystals grown in vapor and their growth kinetics
|
Sazaki, Gen
|
|
|
|
4 |
p.
|
artikel
|
| 33 |
Kinetics and intimate mechanism of protein crystal nucleation
|
Nanev, Christo N.
|
|
2013
|
|
4 |
p. 133-169
37 p.
|
artikel
|
| 34 |
Low-temperature wet chemical precipitation of YVO4:Bi3+,Eu3+ nanophosphors via citrate precursors
|
Takeshita, Satoru
|
|
2011
|
|
4 |
p. 127-136
10 p.
|
artikel
|
| 35 |
Macrosteps dynamics and the growth of crystals and epitaxial layers
|
Krukowski, Stanislaw
|
|
|
|
4 |
p.
|
artikel
|
| 36 |
Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
|
Supplie, Oliver
|
|
2018
|
|
4 |
p. 103-132
|
artikel
|
| 37 |
Nonstoichiometry in oxides
|
Collongues, R.
|
|
1992
|
|
4 |
p. 203-240
38 p.
|
artikel
|
| 38 |
On conductivity in lead chalcogenides
|
Kothiyal, G.P.
|
|
1990
|
|
4 |
p. 313-332
20 p.
|
artikel
|
| 39 |
Optical imaging and three dimensional reconstruction of the concentration field around a crystal growing from an aqueous solution: A review
|
Srivastava, Atul
|
|
2012
|
|
4 |
p. 209-278
70 p.
|
artikel
|
| 40 |
Polycrystalline CdTe thin films for photovoltaic applications
|
Bosio, Alessio
|
|
2006
|
|
4 |
p. 247-279
33 p.
|
artikel
|
| 41 |
Positron annihilation spectroscopy of vacancy-related defects in semiconductors
|
Corbel, C.
|
|
1992
|
|
4 |
p. 241-256
16 p.
|
artikel
|
| 42 |
Preferred crystallographic orientation of nanocrystals embedded inside nanopores
|
Bishara, Hanna
|
|
|
|
4 |
p.
|
artikel
|
| 43 |
Properties of gallium selenide single crystal
|
Fernelius, N.C.
|
|
1994
|
|
4 |
p. 275-353
79 p.
|
artikel
|
| 44 |
Raman characterization of semiconducting materials and related structures
|
Prévot, B.
|
|
1991
|
|
4 |
p. 245-319
75 p.
|
artikel
|
| 45 |
Rapid synthesis of tin-doped indium oxide microcrystals in supercritical water using hydrazine as reducing agent
|
Li, Hong
|
|
2011
|
|
4 |
p. 117-126
10 p.
|
artikel
|
| 46 |
Recent developments and progress on electrical contacts to CdTe, CdS and ZnSe with special reference to BARRIER contacts to CdTe
|
Dharmadasa, I.M.
|
|
1998
|
|
4 |
p. 249-290
42 p.
|
artikel
|
| 47 |
Sapphire shaped crystals for waveguiding, sensing and exposure applications
|
Katyba, G.M.
|
|
2018
|
|
4 |
p. 133-151
|
artikel
|
| 48 |
Semi-wet growth and characterization of multi-functional nano-engineered mixed metal oxides for industrial application
|
Singh, Laxman
|
|
|
|
4 |
p.
|
artikel
|
| 49 |
Single crystal growth by the traveling solvent technique: A review
|
Koohpayeh, S.M.
|
|
2016
|
|
4 |
p. 22-34
13 p.
|
artikel
|
| 50 |
Solvothermal growth of ZnO
|
Ehrentraut, Dirk
|
|
2006
|
|
4 |
p. 280-335
56 p.
|
artikel
|
| 51 |
Solvothermal synthesis of cerium oxides
|
Walton, Richard I.
|
|
2011
|
|
4 |
p. 93-108
16 p.
|
artikel
|
| 52 |
The characterization of semiconductor layer and interface quality with special reference to raman spectroscopy
|
Geurts, J.
|
|
1996
|
|
4 |
p. 185-224
40 p.
|
artikel
|
| 53 |
The growth of crystals from the vapour
|
Brinkman, A.W.
|
|
1998
|
|
4 |
p. 169-209
41 p.
|
artikel
|
| 54 |
The quality control of quartz growth: A chinese perspective
|
Furong, Chen
|
|
1995
|
|
4 |
p. 283-294
12 p.
|
artikel
|
| 55 |
The role of grain size on the thermal instability of nanostructured metal oxides used in gas sensor applications and approaches for grain-size stabilization
|
Korotcenkov, G.
|
|
2012
|
|
4 |
p. 167-208
42 p.
|
artikel
|
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