nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Applications of molecular dynamics simulations to crystal growth: step energies and low temperature growth
|
Roland, Christopher |
|
1996 |
6 |
2 |
p. 135-139 5 p. |
artikel |
2 |
A review of reflection mass spectrometry during III/V MBE
|
Tsao, J.Y. |
|
1996 |
6 |
2 |
p. 140-148 9 p. |
artikel |
3 |
Atomistic modeling of epitaxial growth: comparisons between lattice models and experiment
|
Vvedensky, D.D. |
|
1996 |
6 |
2 |
p. 182-187 6 p. |
artikel |
4 |
Epitaxial growth simulation employing a combined molecular dynamics and Monte Carlo approach
|
Grein, C.H. |
|
1996 |
6 |
2 |
p. 123-126 4 p. |
artikel |
5 |
Forward
|
Gyure, M.F. |
|
1996 |
6 |
2 |
p. v-vi nvt p. |
artikel |
6 |
Growth models for virtual molecular beam epitaxy
|
Das Sarma, S. |
|
1996 |
6 |
2 |
p. 149-157 9 p. |
artikel |
7 |
Issues in epitaxial growth of phosphides and antimonides
|
Tu, C.W. |
|
1996 |
6 |
2 |
p. 188-196 9 p. |
artikel |
8 |
Monte Carlo simulation of MBE growth on vicinal surfaces
|
Pal, S. |
|
1996 |
6 |
2 |
p. 176-181 6 p. |
artikel |
9 |
Problems and prospects in the analysis of epitaxial growth of the wide bandgap Group-III nitrides
|
Beresford, R. |
|
1996 |
6 |
2 |
p. 113-122 10 p. |
artikel |
10 |
Remarks on the interactions between atoms and surfaces
|
Harris, John |
|
1996 |
6 |
2 |
p. 173-175 3 p. |
artikel |
11 |
Review of atomistic simulations of surface diffusion and growth on semiconductors
|
Kaxiras, Efthimios |
|
1996 |
6 |
2 |
p. 158-172 15 p. |
artikel |
12 |
Roughening of growing surfaces: Kinetic models and continuum theories
|
Barabási, Albert-László |
|
1996 |
6 |
2 |
p. 127-134 8 p. |
artikel |