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                             63 results found
no title author magazine year volume issue page(s) type
1 Ab initio phonon dispersion calculations for Ti x Ga n As m and Ti xGanPm compounds Palacios, P.
 2005
 33 1-3 p. 118-124
7 p.
 article
2 Ab initio simulations on AgCl(111) surface and AgCl(111)/α-Al2O3(0001) interface Zhukovskii, Yu.F.
 2005
 33 1-3 p. 276-281
6 p.
 article
3 A methodology for the kinetic Monte Carlo simulation of alumina atomic layer deposition onto silicon Mazaleyrat, G.
 2005
 33 1-3 p. 74-82
9 p.
 article
4 An ab initio study of titanium tetra-iso-propoxide (TTIP) adsorption mechanism on a Si(100) surface Palma, Amedeo
 2005
 33 1-3 p. 244-249
6 p.
 article
5 A novel technique for the structural and energetic characterization of lattice defects in the molecular dynamics framework Marqués, Luis A.
 2005
 33 1-3 p. 112-117
6 p.
 article
6 Application of X-ray standing wave (XSW) technique for studies of Zn incorporation in InP epilayers Sirenko, A.A.
 2005
 33 1-3 p. 132-135
4 p.
 article
7 A Tight Binding study of defects in nanocrystalline SnO2 Mazzone, A.M.
 2005
 33 1-3 p. 346-350
5 p.
 article
8 Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation Pelaz, Lourdes
 2005
 33 1-3 p. 92-105
14 p.
 article
9 Atomistic modelling of processes involved in poling of PVDF Ramos, Marta M.D.
 2005
 33 1-3 p. 230-236
7 p.
 article
10 Carbon nanotube shuttle memory device based on singlewall-to-doublewall carbon nanotube transition Kang, Jeong Won
 2005
 33 1-3 p. 338-345
8 p.
 article
11 Characterisation of oxide dispersion-strengthened steel by extended X-ray absorption spectroscopy for its use under irradiation Degueldre, C.
 2005
 33 1-3 p. 3-12
10 p.
 article
12 Characterization and depth profiles measurements of silicon nitride thin films on silicon and molybdenum substrates by Auger electron spectroscopy Fakih, Chakib
 2005
 33 1-3 p. 395-399
5 p.
 article
13 Comparative study of the monolayers A3 Si(CH2) n OCOCH3 (A=Cl,OH) adsorpted on silica surface Dkhissi, A.
 2005
 33 1-3 p. 282-286
5 p.
 article
14 Cu-alkali ion exchange in glass: a model for the copper diffusion based on XAFS experiments Gonella, F.
 2005
 33 1-3 p. 31-36
6 p.
 article
15 Density functional theory investigation of molecular oxygen interacting with Si(100)-(2×1) Richard, N.
 2005
 33 1-3 p. 26-30
5 p.
 article
16 Dipole alignment and dielectric susceptibility of defective ferroelectric: Monte-Carlo simulation Liu, J.-M.
 2005
 33 1-3 p. 66-73
8 p.
 article
17 Editorial board 2005
 33 1-3 p. CO2-
1 p.
 article
18 Effect of ion irradiation on the structural formation of aluminide phases on the Ti substrate during annealing Romankov, S.E.
 2005
 33 1-3 p. 388-394
7 p.
 article
19 Effect of tungsten 0–8wt.% on the oxidation of Co–Cr alloys Karaali, A.
 2005
 33 1-3 p. 37-43
7 p.
 article
20 Elastic properties of binary NiAl, NiCr and AlCr and ternary Ni2AlCr alloys from molecular dynamic and Abinitio simulation Faraoun, H.
 2005
 33 1-3 p. 184-191
8 p.
 article
21 Electronic control of the stability of rutile- versus corundum-type structures of ruthenium and rhodium oxides Grillo, M.E.
 2005
 33 1-3 p. 83-91
9 p.
 article
22 E-MRS 2004 Spring Meeting Symposium H: Atomic Scale Materials Design: Modelling and Characterization Estève, Alain
 2005
 33 1-3 p. 1-2
2 p.
 article
23 Evolution of nanometric structures under irradiation studied by a time-dependent Hartree–Fock method Morandi, V.
 2005
 33 1-3 p. 351-355
5 p.
 article
24 First principles calculations of structural, elastic and electronic properties of XO2 (X=Zr, Hf and Th) in fluorite phase Terki, R.
 2005
 33 1-3 p. 44-52
9 p.
 article
25 First principles calculation study of multi-silicon doped fullerenes Matsubara, Masahiko
 2005
 33 1-3 p. 237-243
7 p.
 article
26 First principles modeling of intermediate range order in amorphous SiSe2 Celino, Massimo
 2005
 33 1-3 p. 106-111
6 p.
 article
27 First-principles study of cubic Al x Ga1−x N alloys Dridi, Z.
 2005
 33 1-3 p. 136-140
5 p.
 article
28 First stages of the oxidation of the Si-rich 3C–SiC(001) surface Wachowicz, E.
 2005
 33 1-3 p. 13-19
7 p.
 article
29 FP-LAPW investigation of electronic structure of TaN and TaC compounds Sahnoun, M.
 2005
 33 1-3 p. 175-183
9 p.
 article
30 Growth of three-dimensional SiC clusters on Si modelled by KMC Schmidt, A.A.
 2005
 33 1-3 p. 375-381
7 p.
 article
31 Half-metallic Mn-doped Si(x)Ge(1− x) alloys: a first principles study Peressi, M.
 2005
 33 1-3 p. 125-131
7 p.
 article
32 Intra-molecular properties of DMeOPPV studied by quantum molecular dynamics Correia, Helena M.G.
 2005
 33 1-3 p. 218-223
6 p.
 article
33 Investigation of sputtering and oxygen desorption processes by binary collision approximation method Dzhurakhalov, A.A.
 2005
 33 1-3 p. 250-255
6 p.
 article
34 Kinetics of diffusion-limited reactions with biased diffusion in percolating to compact substrates Gonçalves, N.J.
 2005
 33 1-3 p. 331-337
7 p.
 article
35 Local vibrational modes of Zn–H–As defects in GaAs, ZnSe and ZnTe Torres, V.J.B.
 2005
 33 1-3 p. 145-147
3 p.
 article
36 L10-ordering kinetics in FePt nano-layers: Monte Carlo simulation Kozłowski, M.
 2005
 33 1-3 p. 287-295
9 p.
 article
37 Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110) Rasulov, A.M.
 2005
 33 1-3 p. 148-152
5 p.
 article
38 Measurement of attraction force between AFM tip and surface of dielectric thin films with DC-bias Zhu, Y.F.
 2005
 33 1-3 p. 53-58
6 p.
 article
39 Modeling current transport in organic light-emitting devices (OLEDs) Kwok, H.L.
 2005
 33 1-3 p. 200-205
6 p.
 article
40 Modeling the optical properties of Si-capped germanium quantum dots Skoulidis, N.
 2005
 33 1-3 p. 303-309
7 p.
 article
41 Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation Zirkelbach, F.
 2005
 33 1-3 p. 310-316
7 p.
 article
42 Modelling of layer epitaxial growth: surface morphology and growth mode transitions Trofimov, Vladimir I.
 2005
 33 1-3 p. 362-368
7 p.
 article
43 Molecular dynamics simulations of nanomemory element based on boron-nitride nanotube-to-peapod transition Hwang, Ho Jung
 2005
 33 1-3 p. 317-324
8 p.
 article
44 Monte Carlo growth and in situ characterisation for Al x Ga1−x As heteroepitaxy Fazouan, N.
 2005
 33 1-3 p. 382-387
6 p.
 article
45 Nanoscale effects on the nanomechanical properties of multifunctional materials Charitidis, C.
 2005
 33 1-3 p. 296-302
7 p.
 article
46 Numerical modeling of the superconducting flux flow transistor with a nanobridge Ko, Seokcheol
 2005
 33 1-3 p. 325-330
6 p.
 article
47 Numerical simulation of metallic film thickness distribution deposited by electron beam co-evaporation under vacuum Aubreton, P.
 2005
 33 1-3 p. 400-406
7 p.
 article
48 One-dimensional electron systems for anchoring growth of carbon nanostructures Hyldgaard, P.
 2005
 33 1-3 p. 356-361
6 p.
 article
49 Ordering effects on the electronic structures of AlN/GaN, InN/GaN and InN/AlN superlattices Lakdja, A.
 2005
 33 1-3 p. 157-162
6 p.
 article
50 Phase separation and magnetoresistance in random-field magnetic polaron systems Dong, Sh.
 2005
 33 1-3 p. 168-174
7 p.
 article
51 Predictive process design: a theoretical model of atomic layer deposition Elliott, Simon D.
 2005
 33 1-3 p. 20-25
6 p.
 article
52 Quantitative characterization of the mesoscopic surface roughness in a growing island film Trofimov, Vladimir I.
 2005
 33 1-3 p. 369-374
6 p.
 article
53 Quantum modelling of poly(vinylidene fluoride) Correia, Helena M.G.
 2005
 33 1-3 p. 224-229
6 p.
 article
54 Quenching-dependent reversible modification of electronic structure of proton-implanted silicon Tokmoldin, S.
 2005
 33 1-3 p. 141-144
4 p.
 article
55 Relaxation of open crystal structures with a density functional tight-binding scheme: Illustration in the case of the acetonitrile crystal Beaucamp, Sylvain
 2005
 33 1-3 p. 212-217
6 p.
 article
56 Rf-sputtering deposition and magnetic characterisation of Nd–Fe–B thin films for microwave applications Valetas, M.
 2005
 33 1-3 p. 163-167
5 p.
 article
57 Spin polarization and band alignments at NiMnSb/GaAs interface Debernardi, A.
 2005
 33 1-3 p. 263-268
6 p.
 article
58 Stability in polysilanes for light emitting diodes Sharma, Asha
 2005
 33 1-3 p. 206-211
6 p.
 article
59 Structural properties and stability of defected ZnSe/GaAs(001) interfaces Stroppa, A.
 2005
 33 1-3 p. 256-262
7 p.
 article
60 The local inelastic electron–polar optical phonon interaction in mercury telluride Malyk, O.P.
 2005
 33 1-3 p. 153-156
4 p.
 article
61 Three-step mechanism of the water recombination reactions on SiO2/Si surface in the first stage of ZrO2 atomic layer deposition Jeloaica, L.
 2005
 33 1-3 p. 59-65
7 p.
 article
62 Tight binding modeling of band gaps and band offsets in heterostructures Hakan Gürel, H.
 2005
 33 1-3 p. 269-275
7 p.
 article
63 Van der Waals interaction of parallel polymers and nanotubes Kleis, Jesper
 2005
 33 1-3 p. 192-199
8 p.
 article
                             63 results found
 
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