nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A simulation study of the effect of varying nitrogen potential on behavior of precipitation in nitridation of alloys
|
Zhou, Lang |
|
2002 |
23 |
1-4 |
p. 204-208 5 p. |
artikel |
2 |
Atomistic process on hydrogen embrittlement of a single crystal of nickel by the embedded atom method
|
Xu, Xuejun |
|
2002 |
23 |
1-4 |
p. 131-138 8 p. |
artikel |
3 |
Atomistic simulation of energetics of motion of screw dislocations in bcc Fe at finite temperatures
|
Ngan, A.H.W. |
|
2002 |
23 |
1-4 |
p. 139-145 7 p. |
artikel |
4 |
Author index to Volume 23
|
|
|
2002 |
23 |
1-4 |
p. 301-303 3 p. |
artikel |
5 |
Bond-order potentials: bridging the electronic to atomistic modelling hierarchies
|
Pettifor, D.G. |
|
2002 |
23 |
1-4 |
p. 33-37 5 p. |
artikel |
6 |
Characteristics of boron and nitrogen species on aluminum surface
|
Zhang, R.Q |
|
2002 |
23 |
1-4 |
p. 38-42 5 p. |
artikel |
7 |
Combined atomistic and mesoscale simulation of grain growth in nanocrystalline thin films
|
Haslam, A.J. |
|
2002 |
23 |
1-4 |
p. 15-32 18 p. |
artikel |
8 |
Continuum and atomistic modeling of electromechanically-induced failure of ductile metallic thin films
|
Maroudas, Dimitrios |
|
2002 |
23 |
1-4 |
p. 242-249 8 p. |
artikel |
9 |
Diffuse-interface modeling of composition evolution in the presence of structural defects
|
Hu, S.Y. |
|
2002 |
23 |
1-4 |
p. 270-282 13 p. |
artikel |
10 |
Diffusion of clusters down (111) aluminum islands
|
Bockstedte, M |
|
2002 |
23 |
1-4 |
p. 85-94 10 p. |
artikel |
11 |
Dislocation nucleation and propagation during thin film deposition under compression
|
Liu, W.C. |
|
2002 |
23 |
1-4 |
p. 155-165 11 p. |
artikel |
12 |
Effect of applied load on nucleation and growth of γ-hydrides in zirconium
|
Ma, X.Q. |
|
2002 |
23 |
1-4 |
p. 283-290 8 p. |
artikel |
13 |
Effect of grain-structure topology in modelling aggregate irradiation creep behaviour of two-phase alloys
|
Du, D.X. |
|
2002 |
23 |
1-4 |
p. 260-269 10 p. |
artikel |
14 |
Energetics of Ge addimers on the Si(100) and Ge(100) surfaces: a comparative study
|
Zhang, Q.-M. |
|
2002 |
23 |
1-4 |
p. 48-54 7 p. |
artikel |
15 |
Energetics of Stone–Wales defects in deformations of monoatomic hexagonal layers
|
Samsonidze, Ge.G |
|
2002 |
23 |
1-4 |
p. 62-72 11 p. |
artikel |
16 |
Energetics of Ti atom diffusion into diamond film
|
Wan, J |
|
2002 |
23 |
1-4 |
p. 73-79 7 p. |
artikel |
17 |
First-principles modeling of high-k gate dielectric materials
|
Cho, Kyeongjae |
|
2002 |
23 |
1-4 |
p. 43-47 5 p. |
artikel |
18 |
First principles study of influence of alloying elements on TiAl: cleavage strength and deformability
|
Song, Y |
|
2002 |
23 |
1-4 |
p. 55-61 7 p. |
artikel |
19 |
Integrated multiscale process simulation
|
Cale, T.S. |
|
2002 |
23 |
1-4 |
p. 3-14 12 p. |
artikel |
20 |
Interaction of a transonic dislocation with subsonic dislocation and point defect clusters
|
Shi, S.Q |
|
2002 |
23 |
1-4 |
p. 95-104 10 p. |
artikel |
21 |
Kinetic Monte Carlo approach to modeling dislocation mobility
|
Cai, Wei |
|
2002 |
23 |
1-4 |
p. 124-130 7 p. |
artikel |
22 |
Mathematical model for the plateau region of P–C-isotherms of hydrogen-absorbing alloys using hydrogen reaction kinetics
|
Feng, F. |
|
2002 |
23 |
1-4 |
p. 291-299 9 p. |
artikel |
23 |
Mesoscopic models for surface deformation
|
Walgraef, Daniel |
|
2002 |
23 |
1-4 |
p. 235-241 7 p. |
artikel |
24 |
Microstructural modelling of dynamic recrystallisation using an extended cellular automaton approach
|
Ding, R. |
|
2002 |
23 |
1-4 |
p. 209-218 10 p. |
artikel |
25 |
Molecular dynamic simulations on tensile mechanical properties of single-walled carbon nanotubes with and without hydrogen storage
|
Zhou, L.G |
|
2002 |
23 |
1-4 |
p. 166-174 9 p. |
artikel |
26 |
Molecular dynamics simulation of shearing deformation process of silicon nitride single crystal
|
Ogata, Shigenobu |
|
2002 |
23 |
1-4 |
p. 146-154 9 p. |
artikel |
27 |
Molecular dynamics simulations of energetic aluminum cluster deposition
|
Kang, Jeong Won |
|
2002 |
23 |
1-4 |
p. 105-110 6 p. |
artikel |
28 |
Molecular dynamics simulations of motion of edge and screw dislocations in a metal
|
Chang, Jinpeng |
|
2002 |
23 |
1-4 |
p. 111-115 5 p. |
artikel |
29 |
Novel formation and decay mechanisms of nanostructures on surface
|
Wang, E.G. |
|
2002 |
23 |
1-4 |
p. 197-203 7 p. |
artikel |
30 |
On the nature of attractive dislocation crossed states
|
Madec, R |
|
2002 |
23 |
1-4 |
p. 219-224 6 p. |
artikel |
31 |
Point-defect properties in body-centered cubic transition metals with analytic EAM interatomic potentials
|
Hu, Wangyu |
|
2002 |
23 |
1-4 |
p. 175-189 15 p. |
artikel |
32 |
Preface
|
Xiao Guo, Z |
|
2002 |
23 |
1-4 |
p. 1- 1 p. |
artikel |
33 |
Shallow defect states in hydrogenated amorphous silicon oxide
|
Lin, Shu-Ya |
|
2002 |
23 |
1-4 |
p. 80-84 5 p. |
artikel |
34 |
Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments
|
Maroudas, Dimitrios |
|
2002 |
23 |
1-4 |
p. 250-259 10 p. |
artikel |
35 |
Structural instability of uniaxially compressed α-quartz
|
Subramanian, Sundararaman |
|
2002 |
23 |
1-4 |
p. 116-123 8 p. |
artikel |
36 |
Texture competition during thin film deposition – effects of grain boundary migration
|
Huang, Hanchen |
|
2002 |
23 |
1-4 |
p. 190-196 7 p. |
artikel |
37 |
The dynamics of dislocation interaction with sessile self-interstitial atom (SIA) defect cluster atmospheres
|
Huang, Jianming |
|
2002 |
23 |
1-4 |
p. 225-234 10 p. |
artikel |