| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio modeling study of boron diffusion in silicon
|
Windl, W
|
|
2001
|
21 |
4 |
p. 496-504
9 p.
|
artikel
|
| 2 |
Author index to volume …
|
|
|
2001
|
21 |
4 |
p. 535-537
3 p.
|
artikel
|
| 3 |
Bulk Si1−x Ge x single- and poly-crystals: a new prospective material for electronics
|
Atabaev, Ilkham G.
|
|
2001
|
21 |
4 |
p. 526-529
4 p.
|
artikel
|
| 4 |
Capacitance theory of open quantum systems with classical contacts
|
Racec, P.N.
|
|
2001
|
21 |
4 |
p. 475-480
6 p.
|
artikel
|
| 5 |
Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen
|
Misiuk, A
|
|
2001
|
21 |
4 |
p. 515-525
11 p.
|
artikel
|
| 6 |
Energetics of NP and NB complexes in silicon
|
Zavodinsky, V.G
|
|
2001
|
21 |
4 |
p. 505-508
4 p.
|
artikel
|
| 7 |
From oxygen adsorption to the growth of thin oxides on silicon surfaces
|
Morgen, P.
|
|
2001
|
21 |
4 |
p. 481-487
7 p.
|
artikel
|
| 8 |
Modeling of heterojunction bipolar transistors at any temperature, pressure, strain and alloy composition
|
Ünlü, Hilmi
|
|
2001
|
21 |
4 |
p. 453-474
22 p.
|
artikel
|
| 9 |
Molecular dynamics simulations of ionized cluster beam deposition: case of study of aluminum
|
Kang, Jeong-Won
|
|
2001
|
21 |
4 |
p. 509-514
6 p.
|
artikel
|
| 10 |
Quantum chemical modelling of polarons and perovskite solid solutions
|
Eglitis, R.I.
|
|
2001
|
21 |
4 |
p. 530-534
5 p.
|
artikel
|
| 11 |
Rotations of silica tetrahedrons in first oxide layer on Si(100): A quantum chemical study
|
Favaro, Laurent
|
|
2001
|
21 |
4 |
p. 488-495
8 p.
|
artikel
|
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