| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond
|
Ollison, C.D.
|
|
1999
|
8 |
6 |
p. 1083-1090
8 p.
|
artikel
|
| 2 |
A method of determining the elastic properties of diamond-like carbon films
|
Cho, S.-J
|
|
1999
|
8 |
6 |
p. 1067-1072
6 p.
|
artikel
|
| 3 |
Atomic force microscopy investigation of the effects of annealing on amorphous carbon nitride films deposited by r.f. magnetron sputtering
|
Prioli, R
|
|
1999
|
8 |
6 |
p. 993-995
3 p.
|
artikel
|
| 4 |
Characterization of magnetron sputtered carbon nitride films 1 Presented at the Diamond '98 Conference, Crete, Greece, 13–18 September, 1998. 1
|
Kulisch, W
|
|
1999
|
8 |
6 |
p. 1039-1045
7 p.
|
artikel
|
| 5 |
Crystal growth of diamond from a phosphorus solvent under high pressure–high temperature conditions
|
Michau, Dominique
|
|
1999
|
8 |
6 |
p. 1125-1129
5 p.
|
artikel
|
| 6 |
Dependence of the diamond coating adhesion on the microstructure of SiC-based substrates
|
Chae, K.-W
|
|
1999
|
8 |
6 |
p. 1018-1021
4 p.
|
artikel
|
| 7 |
Depletion of surface boron of heavily boron-doped diamond films by annealing
|
Wong, K.W
|
|
1999
|
8 |
6 |
p. 1006-1010
5 p.
|
artikel
|
| 8 |
Effect of total reaction pressure on electrical properties of boron doped homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron
|
Tsubota, T
|
|
1999
|
8 |
6 |
p. 1079-1082
4 p.
|
artikel
|
| 9 |
Formation and characteristics of undoped and doped tetrahedral amorphous carbon films
|
Chen, D.
|
|
1999
|
8 |
6 |
p. 1130-1134
5 p.
|
artikel
|
| 10 |
High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method
|
Takeuchi, D.
|
|
1999
|
8 |
6 |
p. 1046-1049
4 p.
|
artikel
|
| 11 |
Index
|
|
|
1999
|
8 |
6 |
p. 1153-1157
5 p.
|
artikel
|
| 12 |
Index
|
|
|
1999
|
8 |
6 |
p. 1158-1174
17 p.
|
artikel
|
| 13 |
Influence of internal diffusion barriers on carbon diffusion in pure titanium and Ti–6Al–4V during diamond deposition
|
De Barros, M.I.
|
|
1999
|
8 |
6 |
p. 1022-1032
11 p.
|
artikel
|
| 14 |
Negative-biased diamond nucleation on silicon at a wide range of methane concentrations in hot filament chemical vapour deposition
|
Li, D.M
|
|
1999
|
8 |
6 |
p. 1135-1141
7 p.
|
artikel
|
| 15 |
Nucleation of cubic boron nitride thin films
|
Collazo-Davila, C.
|
|
1999
|
8 |
6 |
p. 1091-1100
10 p.
|
artikel
|
| 16 |
Observation of the H2 defect in gem-quality type Ia diamond
|
Buerki, Peter R
|
|
1999
|
8 |
6 |
p. 1061-1066
6 p.
|
artikel
|
| 17 |
On the nature of grain boundary defects in high quality CVD diamond films and their influence on physical properties
|
Steeds, J.W.
|
|
1999
|
8 |
6 |
p. 996-1005
10 p.
|
artikel
|
| 18 |
Optical spin polarization in the di-〈001〉-split interstitial (R1) centre in diamond
|
Twitchen, D.J.
|
|
1999
|
8 |
6 |
p. 1101-1106
6 p.
|
artikel
|
| 19 |
Oxygen at the interface of CVD diamond films on silicon
|
Bergmaier, A
|
|
1999
|
8 |
6 |
p. 1142-1147
6 p.
|
artikel
|
| 20 |
Pd ohmic contacts to p-SiC 4H, 6H and 15R polytypes
|
Kalinina, E.V.
|
|
1999
|
8 |
6 |
p. 1114-1117
4 p.
|
artikel
|
| 21 |
Physical properties of a:DLC films and their dependence on parameters of deposition and type of substrate
|
Maharizi, M
|
|
1999
|
8 |
6 |
p. 1050-1056
7 p.
|
artikel
|
| 22 |
Secondary electron emission measurements on synthetic diamond films 1 Presented at the Diamond '98 Conference, Crete, Greece, 13–18 September, 1998. 1
|
Hopman, H.J
|
|
1999
|
8 |
6 |
p. 1033-1038
6 p.
|
artikel
|
| 23 |
Spectroscopic characterization of thin SiC films
|
Dimitrov, D.B
|
|
1999
|
8 |
6 |
p. 1148-1151
4 p.
|
artikel
|
| 24 |
Structure and properties of hard carbon films depending on heat treatment temperatures via polymer precursor
|
Sun, Z.
|
|
1999
|
8 |
6 |
p. 1107-1113
7 p.
|
artikel
|
| 25 |
Synthesis of CVD diamond at atmospheric pressure using the hot-filament CVD method
|
Kobayashi, T
|
|
1999
|
8 |
6 |
p. 1057-1060
4 p.
|
artikel
|
| 26 |
Temperature dependence of microhardness of hard BN thin films prepared by ion-assisted vapor deposition
|
Tanaka, K
|
|
1999
|
8 |
6 |
p. 1011-1017
7 p.
|
artikel
|
| 27 |
The diamond growth from Li2CO3, Na2CO3, K2CO3 and Cs2CO3 solvent-catalysts at P=7 GPa and T=1700–1750°C
|
Pal'yanov, Yu.N
|
|
1999
|
8 |
6 |
p. 1118-1124
7 p.
|
artikel
|
| 28 |
The interface diffusion and chemical reaction between a Ti layer and a diamond substrate
|
Zhu, Y.
|
|
1999
|
8 |
6 |
p. 1073-1078
6 p.
|
artikel
|
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