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                             83 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Adhesion improvement of diamond films on steel subtrates using chromium nitride interlayers Glozman, O.
 1997
 6 5-7 p. 796-801
6 p.
 artikel
2 AES and XPS observations of HFCVD diamond deposition on monocrystalline (111) copper Constant, L.
 1997
 6 5-7 p. 664-667
4 p.
 artikel
3 A multilayer approach to high adhesion diamond-like carbon coatings on titanium Dumkum, C.
 1997
 6 5-7 p. 802-806
5 p.
 artikel
4 A two-step process for the formation of a Mo2C contact on polycrystalline diamond films Lucazeau, E.
 1997
 6 5-7 p. 843-846
4 p.
 artikel
5 Author index 1997
 6 5-7 p. 915-918
4 p.
 artikel
6 Biased enhanced nucleation of diamond on metals: an OES and electrical investigation Whitfield, Michael D.
 1997
 6 5-7 p. 658-663
6 p.
 artikel
7 Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond Inushima, T.
 1997
 6 5-7 p. 852-855
4 p.
 artikel
8 Carrier transport mechanisms through the metal/p-type diamond semiconductor interface Koide, Y.
 1997
 6 5-7 p. 847-851
5 p.
 artikel
9 Cathodoluminescence spectroscopy of synthetic diamond films Marinelli, M.
 1997
 6 5-7 p. 717-720
4 p.
 artikel
10 C-BN thin film formation in a hybrid r.f.-PLD technique Klotzbücher, T.
 1997
 6 5-7 p. 599-603
5 p.
 artikel
11 Characterization and optimization of mid-frequency plasma-enhanced chemical vapour deposited carbon films using response surface methodology Wächter, R.
 1997
 6 5-7 p. 537-541
5 p.
 artikel
12 Comparison of the surface structure of carbon films deposited by different methods Niedzielski, P.
 1997
 6 5-7 p. 721-724
4 p.
 artikel
13 Conference calendar 1997
 6 5-7 p. 913-914
2 p.
 artikel
14 Cubic boron nitride thin films by tuned r.f. magnetron sputtering Gimeno, S.
 1997
 6 5-7 p. 604-607
4 p.
 artikel
15 Deposition of DLC films in CH4/Ne and CH4/Kr r.f. plasmas Mutsukura, Nobuki
 1997
 6 5-7 p. 547-550
4 p.
 artikel
16 Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers Noda, H.
 1997
 6 5-7 p. 865-868
4 p.
 artikel
17 Diamond fibre metal matrix composites Meaden, G.
 1997
 6 5-7 p. 898-901
4 p.
 artikel
18 Diamond fibres by a hot filament CVD process Griffith, P.W.
 1997
 6 5-7 p. 822-825
4 p.
 artikel
19 Diamond-like carbon metal-semiconductor-metal switches for active matrix displays Egret, S.
 1997
 6 5-7 p. 879-883
5 p.
 artikel
20 Diamond nucleation on silicon during bias treatment in chemical vapour deposition as analysed by electron microscopy Stammler, M.
 1997
 6 5-7 p. 747-751
5 p.
 artikel
21 Distribution of the cobalt-related luminescence center in HPHT diamond Kanda, H.
 1997
 6 5-7 p. 708-711
4 p.
 artikel
22 Effect of boron incorporation on the structure of polycrystalline diamond films Brunet, F.
 1997
 6 5-7 p. 774-777
4 p.
 artikel
23 Effect of negative bias voltage on a-C:H films deposited in electron cyclotron resonance plasma Zarrabian, M.
 1997
 6 5-7 p. 542-546
5 p.
 artikel
24 Elastic properties of polycrystalline cubic boron nitride and diamond by dynamic resonance measurements D'Evelyn, Mark P.
 1997
 6 5-7 p. 812-816
5 p.
 artikel
25 Electrical conduction in polycrystalline diamond and the effects of UV irradiation Gonon, P.
 1997
 6 5-7 p. 860-864
5 p.
 artikel
26 Electron emission characteristics of metal/diamond field emitters Sugino, Takashi
 1997
 6 5-7 p. 889-892
4 p.
 artikel
27 Electronic and atomic structure of undoped and doped ta-C films Ronning, C.
 1997
 6 5-7 p. 830-834
5 p.
 artikel
28 Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon Schäfer, J.
 1997
 6 5-7 p. 730-735
6 p.
 artikel
29 Enhancing low field electron emission from polycrystalline diamond Baral, Bhaswar
 1997
 6 5-7 p. 869-873
5 p.
 artikel
30 Etching of graphite and diamond by thermal energy hydrogen atoms Donnelly, C.M.
 1997
 6 5-7 p. 787-790
4 p.
 artikel
31 Evaluation of MPCVD diamond film adhesion on hard metal substrates by micro Raman spectroscopy Fernandes, A.
 1997
 6 5-7 p. 769-773
5 p.
 artikel
32 Fabrication of integrated diamond cantilevers with tips for SPM applications Kulisch, W.
 1997
 6 5-7 p. 906-911
6 p.
 artikel
33 Factors affecting the fracture strength and Young's modulus of CVD diamond-coated fibres Kalaugher, E.
 1997
 6 5-7 p. 826-829
4 p.
 artikel
34 Gap density of states in CVD diamond films from photoconductivity and photoluminescence data Rossi, M.C.
 1997
 6 5-7 p. 712-716
5 p.
 artikel
35 Growth and characterisation of boron nitride films: layer sequence and phase identification Plass, M.F.
 1997
 6 5-7 p. 594-598
5 p.
 artikel
36 Hard a-C(N):H films obtained from plasma decomposition of methylamine-containing mixtures Lacerda, M.M.
 1997
 6 5-7 p. 631-634
4 p.
 artikel
37 HREM and EXELFS investigation of local structure in thin CVD diamond films Dorignac, D.
 1997
 6 5-7 p. 758-762
5 p.
 artikel
38 Improvement of diamond nuclei orientation by double-step bias treatment in microwave plasma-assisted chemical vapor deposition using C2H4 and CH4 as carbon source Saito, Takeyasu
 1997
 6 5-7 p. 668-672
5 p.
 artikel
39 Improvement of mechanical properties of a-C:H by silicon addition De Martino, C.
 1997
 6 5-7 p. 559-563
5 p.
 artikel
40 Insight on the microscopical structure of a-C and a-C:H thin films through electron spin resonance analysis Fanciulli, M.
 1997
 6 5-7 p. 725-729
5 p.
 artikel
41 Interfacial analysis of CVD diamond on copper substrates Jiang, N.
 1997
 6 5-7 p. 743-746
4 p.
 artikel
42 Internal field emission at metal/diamond contact and performance of thin film field emitters: computer simulation Hattori, Reiji
 1997
 6 5-7 p. 884-888
5 p.
 artikel
43 Investigation of the boron incorporation in polycrystalline CVD diamond films by TEM, EELS and Raman spectroscopy Wurzinger, P.
 1997
 6 5-7 p. 763-768
6 p.
 artikel
44 Investigation of the nucleation layer in c-BN film growth Freudenstein, R.
 1997
 6 5-7 p. 584-588
5 p.
 artikel
45 Kinetics of the initial stages of CVD diamond growth on non-diamond substrates: surface catalytic effects and homoepitaxy Chakk, Y.
 1997
 6 5-7 p. 681-686
6 p.
 artikel
46 Lift-off technique of homoepitaxial CVD diamond films by deep implantation and selective etching Locher, R.
 1997
 6 5-7 p. 654-657
4 p.
 artikel
47 Low-temperature formation of β-silicon carbide Ulrich, S.
 1997
 6 5-7 p. 645-648
4 p.
 artikel
48 Measurement and calculation of the thermal expansion coefficient of diamond Moelle, C.
 1997
 6 5-7 p. 839-842
4 p.
 artikel
49 Mechanism of surface smoothing of diamond by a hydrogen plasma Rawles, R.E.
 1997
 6 5-7 p. 791-795
5 p.
 artikel
50 Microstructure and growth of MWCVD diamond on Si1 − x C x buffer layers Wittorf, D.
 1997
 6 5-7 p. 649-653
5 p.
 artikel
51 Minimization of the defects concentration from boron incorporation in polycrystalline diamond films Colineau, E.
 1997
 6 5-7 p. 778-782
5 p.
 artikel
52 Modeling interface structures of cubic boron nitride films deposited heteroepitaxially and via a hexagonal boron nitride interlayer on silicon (001) surfaces Zhang, R.Q.
 1997
 6 5-7 p. 589-593
5 p.
 artikel
53 Molecular structure of E-BN Olszyna, A.
 1997
 6 5-7 p. 617-620
4 p.
 artikel
54 Nanoscale grinding of ceramics using diamond fibres Partridge, P.G.
 1997
 6 5-7 p. 893-897
5 p.
 artikel
55 Nitrogen and iodine doping in amorphous diamond-like carbon films Allon-Alaluf, M.
 1997
 6 5-7 p. 555-558
4 p.
 artikel
56 Nucleation and initial growth of bias-assisted HFCVD diamond on boron nitride films Polo, M.C.
 1997
 6 5-7 p. 579-583
5 p.
 artikel
57 Optical and electrical investigation of boron-doped homoepitaxial diamond Ogasawara, A.
 1997
 6 5-7 p. 835-838
4 p.
 artikel
58 Optical and photoemission studies of DLC films prepared with a systematic variation of the sp3:sp2 composition Lifshitz, Y.
 1997
 6 5-7 p. 687-693
7 p.
 artikel
59 Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond Duncan Marshall, R.
 1997
 6 5-7 p. 676-680
5 p.
 artikel
60 PACVD nano-crystalline BCN thin films obtained by use of an organoboron precursor Loeffler, J.
 1997
 6 5-7 p. 608-611
4 p.
 artikel
61 Paramagnetic centres in tetrahedral amorphous carbon Fusco, G.
 1997
 6 5-7 p. 783-786
4 p.
 artikel
62 Phase stability and stress relaxation effects of cubic boron nitride thin films under 350 keV ion irradiation Widmayer, P.
 1997
 6 5-7 p. 621-625
5 p.
 artikel
63 Photoluminescence in hydrogenated amorphous carbon Rusli,
 1997
 6 5-7 p. 700-703
4 p.
 artikel
64 Preparation of CN x films by ion beam assisted filtered cathodic arc deposition Spaeth, C.
 1997
 6 5-7 p. 626-630
5 p.
 artikel
65 Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition Woo, H.K.
 1997
 6 5-7 p. 635-639
5 p.
 artikel
66 Production and characterisation of amorphic diamond films produced by pulsed laser ablation of graphite Johnson, S.E.
 1997
 6 5-7 p. 569-573
5 p.
 artikel
67 Quantitative study of Raman scattering and defect optical absorption in CVD diamond films Vorlíček, V.
 1997
 6 5-7 p. 704-707
4 p.
 artikel
68 Raman diagnostics of amorphous diamond-like carbon films produced with a mass-separated ion beam Khriachtchev, L.Yu.
 1997
 6 5-7 p. 694-699
6 p.
 artikel
69 Raman spectroscopy investigation of cubic boron nitride single crystals and layers on Si(100) Werninghaus, T.
 1997
 6 5-7 p. 612-616
5 p.
 artikel
70 Residual stress in polycrystalline diamond/Ti6Al4V systems Scardi, Paolo
 1997
 6 5-7 p. 807-811
5 p.
 artikel
71 Shock-wave-induced phase transition in C:N films Guseva, M.B.
 1997
 6 5-7 p. 640-644
5 p.
 artikel
72 Single source deposition of Me-C:H films using metal-organic precursors Luithardt, W.
 1997
 6 5-7 p. 533-536
4 p.
 artikel
73 Structure and properties of a-C:H films deposited onto polymeric substrates Vasquez, S.
 1997
 6 5-7 p. 551-554
4 p.
 artikel
74 Studies of nanoscale structure and its transformation in pulsed-laser deposited dense diamond-like carbon films Apakina, V.N.
 1997
 6 5-7 p. 564-568
5 p.
 artikel
75 Subject index 1997
 6 5-7 p. 919-925
7 p.
 artikel
76 TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates Wurzinger, P.
 1997
 6 5-7 p. 752-757
6 p.
 artikel
77 The effect of varying deposition conditions on the Young's modulus of diamond coated wires Nicholson, E.D.
 1997
 6 5-7 p. 817-821
5 p.
 artikel
78 Thermal-programmed desorption (TPD) of deuterium from Di(111) surface: presence of two adsorption states Bobrov, K.
 1997
 6 5-7 p. 736-742
7 p.
 artikel
79 Total-dose hardness integrated circuit fabricated with silicon-on-diamond structured wafer Gu, Changzhi
 1997
 6 5-7 p. 673-675
3 p.
 artikel
80 Transition from polymer-like to diamond-like a-C:H films structure and mechanical properties Novikov, N.V.
 1997
 6 5-7 p. 574-578
5 p.
 artikel
81 Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layers Loh, K.P.
 1997
 6 5-7 p. 874-878
5 p.
 artikel
82 Use of diamond-like carbon films in X-ray optics Kondrashov, P.E.
 1997
 6 5-7 p. 902-905
4 p.
 artikel
83 Wide frequency dielectric properties of CVD diamond Ibarra, A.
 1997
 6 5-7 p. 856-859
4 p.
 artikel
                             83 gevonden resultaten
 
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