| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An impedance spectroscopy investigation of polycrystalline diamond from dc to 1 GHz
|
Bataineh, Mohannad M.
|
|
1997
|
6 |
11 |
p. 1689-1696
8 p.
|
article
|
| 2 |
a-SiC:H films deposited by PECVD from silane + acetylene and silane + acetylene + hydrogen gas mixture
|
Giorgis, F.
|
|
1997
|
6 |
11 |
p. 1606-1611
6 p.
|
article
|
| 3 |
Author index for volume 6
|
|
|
1997
|
6 |
11 |
p. 1735-1740
6 p.
|
article
|
| 4 |
Characterization of nucleation and growth of MW-CVD diamond films by spectroscopic ellipsometry and ion beam analysis methods
|
Pintér, I.
|
|
1997
|
6 |
11 |
p. 1633-1637
5 p.
|
article
|
| 5 |
Charge carrier trapping centers in synthetic diamond
|
Romanko, L.A.
|
|
1997
|
6 |
11 |
p. 1674-1679
6 p.
|
article
|
| 6 |
Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods
|
Murakami, T.
|
|
1997
|
6 |
11 |
p. 1668-1673
6 p.
|
article
|
| 7 |
Conference calendar
|
|
|
1997
|
6 |
11 |
p. 1733-
1 p.
|
article
|
| 8 |
Cylindrically symmetric diamond parts by hot-filament CVD
|
Anthony, T.R.
|
|
1997
|
6 |
11 |
p. 1707-1715
9 p.
|
article
|
| 9 |
Diamond film deposition by a substrate-stabilized flat flame
|
Uchida, Kiyoshi
|
|
1997
|
6 |
11 |
p. 1599-1605
7 p.
|
article
|
| 10 |
Diamond seed incorporation by electrochemical treatment of silicon substrate
|
Obraztsov, A.N.
|
|
1997
|
6 |
11 |
p. 1629-1632
4 p.
|
article
|
| 11 |
DLC growth by ion beam assisted deposition: a molecular simulation
|
Fedotov, S.A.
|
|
1997
|
6 |
11 |
p. 1638-1642
5 p.
|
article
|
| 12 |
Excimer laser-induced electron emission from diamond films
|
Pimenov, S.M.
|
|
1997
|
6 |
11 |
p. 1650-1657
8 p.
|
article
|
| 13 |
Growth stages of chemical vapor deposited diamond on the titanium alloy Ti6Al-4V
|
Grögler, T.
|
|
1997
|
6 |
11 |
p. 1658-1667
10 p.
|
article
|
| 14 |
Incorporation of lithium in single crystal diamond: diffusion profiles and optical and electrical properties
|
te Nijenhuis, J.
|
|
1997
|
6 |
11 |
p. 1726-1732
7 p.
|
article
|
| 15 |
Influence of substrate temperature and microwave power on the properties of a-C:H films prepared using the ECR-CVD method
|
Yoon, S.F.
|
|
1997
|
6 |
11 |
p. 1683-1688
6 p.
|
article
|
| 16 |
Ion beam modification of tetrahedral amorphous carbon: the effect of irradiation temperature
|
McCulloch, D.G.
|
|
1997
|
6 |
11 |
p. 1622-1628
7 p.
|
article
|
| 17 |
Measurement of decay time for the NV centre in Ib diamond with a picosecond laser pulse
|
Hanzawa, H.
|
|
1997
|
6 |
11 |
p. 1595-1598
4 p.
|
article
|
| 18 |
Nucleation enhancement behavior of diamond on Si substrate according to surface treatment materials
|
Park, B.S.
|
|
1997
|
6 |
11 |
p. 1716-1721
6 p.
|
article
|
| 19 |
Observation of micro-inclusions in diamond by scanning X-ray analytical microscope
|
Shimomura, S.
|
|
1997
|
6 |
11 |
p. 1680-1682
3 p.
|
article
|
| 20 |
On the {111} <111> penetration twin density in CVD diamond films
|
Knuyt, G.
|
|
1997
|
6 |
11 |
p. 1697-1706
10 p.
|
article
|
| 21 |
Raman and photoluminescence microscopy mapping of CVD micro-diamonds
|
Lippold, G.
|
|
1997
|
6 |
11 |
p. 1587-1594
8 p.
|
article
|
| 22 |
Stiffness, residual stresses and interfacial fracture energy of diamond films on titanium
|
Peng, X.L.
|
|
1997
|
6 |
11 |
p. 1612-1621
10 p.
|
article
|
| 23 |
Subject index
|
|
|
1997
|
6 |
11 |
p. 1741-1742
2 p.
|
article
|
| 24 |
The aggregation of nitrogen and the formation of A centres in diamonds
|
Kiflawi, I.
|
|
1997
|
6 |
11 |
p. 1643-1649
7 p.
|
article
|
| 25 |
The 0.545 eV center in neutron irradiated and annealed type Ib diamond
|
Mita, Y.
|
|
1997
|
6 |
11 |
p. 1722-1725
4 p.
|
article
|
Journal description