| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adhesion of CVD diamond films on silicon substrates of different crystallographic orientations
|
Borges, C.F.M.
|
|
1996
|
5 |
12 |
p. 1402-1406
5 p.
|
artikel
|
| 2 |
Characterization of d.c.jet CVD diamond films on molybdenum
|
Bahr, D.F.
|
|
1996
|
5 |
12 |
p. 1462-1472
11 p.
|
artikel
|
| 3 |
Characterization of diamond-like carbon films before and after heavy energetic ion implantations
|
Wang, T.M.
|
|
1996
|
5 |
12 |
p. 1418-1423
6 p.
|
artikel
|
| 4 |
Conference calendar
|
|
|
1996
|
5 |
12 |
p. 1537-
1 p.
|
artikel
|
| 5 |
Determination of the optical constants of diamond films with a rough growth surface
|
Yin, Z.
|
|
1996
|
5 |
12 |
p. 1490-1496
7 p.
|
artikel
|
| 6 |
Effect of the substrate temperature on the physical characteristics of amorphous carbon films deposited by d.c. magnetron sputtering
|
Mounier, E.
|
|
1996
|
5 |
12 |
p. 1509-1515
7 p.
|
artikel
|
| 7 |
Electrical characterisation of silicon pn-junctions terminated with diamond
|
Olsson, J.
|
|
1996
|
5 |
12 |
p. 1457-1461
5 p.
|
artikel
|
| 8 |
Ellipsometric study of a-C: H films
|
Tolmachiev, V.A.
|
|
1996
|
5 |
12 |
p. 1397-1401
5 p.
|
artikel
|
| 9 |
Energy dependent structure changes in ion beam deposited a-C:H
|
Paterson, Melissa J.
|
|
1996
|
5 |
12 |
p. 1407-1413
7 p.
|
artikel
|
| 10 |
Ex-situ spectroscopic ellipsometry studies of micron thick CVD diamond films
|
Cella, N.
|
|
1996
|
5 |
12 |
p. 1424-1432
9 p.
|
artikel
|
| 11 |
Hydrogen-free deposition of diamond-like coatings from a graphite source
|
Christiansen, S.
|
|
1996
|
5 |
12 |
p. 1433-1439
7 p.
|
artikel
|
| 12 |
Iodine doping of amorphous diamond-like carbon films
|
Allon-Alaluf, M.
|
|
1996
|
5 |
12 |
p. 1497-1502
6 p.
|
artikel
|
| 13 |
Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme
|
Hoff, H.A.
|
|
1996
|
5 |
12 |
p. 1450-1456
7 p.
|
artikel
|
| 14 |
On the low-temperature threshold for cubic boron nitride formation in energetic film deposition
|
McCarty, K.F.
|
|
1996
|
5 |
12 |
p. 1519-1526
8 p.
|
artikel
|
| 15 |
On the pressure limits of diamond chemical vapor deposition
|
Wolden, C.A.
|
|
1996
|
5 |
12 |
p. 1503-1508
6 p.
|
artikel
|
| 16 |
Pretreatment of substrate surface for improved adhesion of diamond films on hard metal cutting tools
|
Deuerler, F.
|
|
1996
|
5 |
12 |
p. 1478-1489
12 p.
|
artikel
|
| 17 |
Relaxation of Ga and H on a 〈111〉 diamond surface
|
Derry, T.E.
|
|
1996
|
5 |
12 |
p. 1473-1477
5 p.
|
artikel
|
| 18 |
Spatial distribution of stacking faults and microtwins in isolated crystals and textured diamond films
|
Bozzolo, N.
|
|
1996
|
5 |
12 |
p. 1532-1535
4 p.
|
artikel
|
| 19 |
Study of photoconductivity in thin amorphous diamond-like carbon (a:DLC) films prepared by r.f. glow discharge technique
|
Klibanov, L.
|
|
1996
|
5 |
12 |
p. 1414-1417
4 p.
|
artikel
|
| 20 |
The creation of the 3107 cm−1 hydrogen absorption peak in synthetic diamond single crystals
|
Kiflawi, I.
|
|
1996
|
5 |
12 |
p. 1516-1518
3 p.
|
artikel
|
| 21 |
The phase transition of hBN-cBN in the B-N-H-O system
|
Gladkaya, I.S.
|
|
1996
|
5 |
12 |
p. 1440-1443
4 p.
|
artikel
|
| 22 |
Thickness measurement of light elemental films
|
Stenberg, G.
|
|
1996
|
5 |
12 |
p. 1444-1449
6 p.
|
artikel
|
| 23 |
Use of carbonitride film as buffer layer for CVD diamond nucleation
|
Karve, Priyadarshini
|
|
1996
|
5 |
12 |
p. 1527-1531
5 p.
|
artikel
|
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