nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Atom beam treatment of diamond films
|
Jubber, M.G. |
|
1995 |
4 |
4 |
p. 445-450 6 p. |
artikel |
2 |
Author index for volume 4
|
|
|
1995 |
4 |
4 |
p. xxi-xxii nvt p. |
artikel |
3 |
Characterization of CVD diamond films by nuclear techniques with α particles
|
Manfredotti, C. |
|
1995 |
4 |
4 |
p. 517-519 3 p. |
artikel |
4 |
Characterization of homoepitaxial diamond films by nuclear methods
|
Samlenski, R. |
|
1995 |
4 |
4 |
p. 503-507 5 p. |
artikel |
5 |
Characterization of the bias nucleation process
|
Kulisch, W. |
|
1995 |
4 |
4 |
p. 401-405 5 p. |
artikel |
6 |
Combustion synthesis: is it the most flexible of the diamond synthesis processes?
|
Ravi, K.V. |
|
1995 |
4 |
4 |
p. 243-249 7 p. |
artikel |
7 |
Committees
|
|
|
1995 |
4 |
4 |
p. xvii- 1 p. |
artikel |
8 |
Comparison between methane and acetylene as carbon sources for C-rich a-SiC: H films
|
Demichelis, F. |
|
1995 |
4 |
4 |
p. 473-477 5 p. |
artikel |
9 |
Conference calendar
|
|
|
1995 |
4 |
4 |
p. xix-xx nvt p. |
artikel |
10 |
Deposition and characterization of amorphous carbon nitride thin films
|
Demichelis, F. |
|
1995 |
4 |
4 |
p. 361-365 5 p. |
artikel |
11 |
Deposition by reactive ion-plasma sputtering and characterization of CN thin films
|
Novikov, N.V. |
|
1995 |
4 |
4 |
p. 390-393 4 p. |
artikel |
12 |
Deposition of α-C:H films in a Hall accelerator plasma
|
Fedoseev, D.V. |
|
1995 |
4 |
4 |
p. 314-317 4 p. |
artikel |
13 |
Deposition of diamond-like carbon film in CH4He r.f. plasma
|
Mutsukura, Nobuki |
|
1995 |
4 |
4 |
p. 342-345 4 p. |
artikel |
14 |
Deposition of Fe-C:H coatings from a ferrocene precursor in a plasma-activated r.f. process
|
Luithardt, W. |
|
1995 |
4 |
4 |
p. 346-349 4 p. |
artikel |
15 |
Deposition of ta-C:H films by r.f. plasma discharges
|
Schwan, J. |
|
1995 |
4 |
4 |
p. 304-308 5 p. |
artikel |
16 |
Dry etching of undoped and boron doped polycrystalline diamond films
|
Dorsch, O. |
|
1995 |
4 |
4 |
p. 456-459 4 p. |
artikel |
17 |
Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments
|
Ristein, J. |
|
1995 |
4 |
4 |
p. 508-516 9 p. |
artikel |
18 |
Effect of surface defects on CVD diamond nucleation on 6H SiC
|
Abraham, S. |
|
1995 |
4 |
4 |
p. 261-267 7 p. |
artikel |
19 |
Electrical properties of boron-doped diamond films after annealing treatment
|
Chen, Chia-Fu |
|
1995 |
4 |
4 |
p. 451-455 5 p. |
artikel |
20 |
Electroconductivity of amorphous carbon films containing silicon and tungsten
|
Bozhko, A. |
|
1995 |
4 |
4 |
p. 488-491 4 p. |
artikel |
21 |
Elemental composition of thin c-BN layers
|
Bergmaier, A. |
|
1995 |
4 |
4 |
p. 478-481 4 p. |
artikel |
22 |
Emission spectroscopy diagnostics of a d.c. plasma jet diamond reactor
|
Cubertafon, J.C. |
|
1995 |
4 |
4 |
p. 350-356 7 p. |
artikel |
23 |
Epitaxy of diamond on silicon
|
Milne, D.K. |
|
1995 |
4 |
4 |
p. 394-400 7 p. |
artikel |
24 |
Evolution of the plumes produced by laser ablation of a carbon target
|
Palau, J. |
|
1995 |
4 |
4 |
p. 337-341 5 p. |
artikel |
25 |
Formation of highly tetrahedral amorphous hydrogenated carbon, ta-C:H
|
Weiler, M. |
|
1995 |
4 |
4 |
p. 268-271 4 p. |
artikel |
26 |
Growth mechanisms of DLC films from C+ ions: experimental studies
|
Lifshitz, Y. |
|
1995 |
4 |
4 |
p. 318-323 6 p. |
artikel |
27 |
High pressure diamond and cubic boron nitride synthesis
|
Demazeau, Gérard |
|
1995 |
4 |
4 |
p. 284-287 4 p. |
artikel |
28 |
Hypothetical C100 molecule and diamond-graphite interface: unstable and metastable states of carbon
|
Latham, Christopher D. |
|
1995 |
4 |
4 |
p. 528-531 4 p. |
artikel |
29 |
Indications of non-monotonic texture evolution from a two-dimensional simulation study
|
Hessmer, R. |
|
1995 |
4 |
4 |
p. 416-418 3 p. |
artikel |
30 |
Influence of the addition of CF4 on the deposition of a-C:H layers using the expanding thermal plasma technique
|
Gielen, J.W.A.M. |
|
1995 |
4 |
4 |
p. 328-332 5 p. |
artikel |
31 |
Investigation of boron and hydrogen concentrations in p-type diamond films by infrared spectroscopy
|
Erz, R. |
|
1995 |
4 |
4 |
p. 469-472 4 p. |
artikel |
32 |
Laser-induced reactive crystallization of metastable BN from copper implanted with B+ and N2 + ions
|
Zdunek, K. |
|
1995 |
4 |
4 |
p. 381-385 5 p. |
artikel |
33 |
Manufacture of amorphous carbon layers by r.f. dense plasma CVD
|
Mitura, Stanislaw |
|
1995 |
4 |
4 |
p. 302-303 2 p. |
artikel |
34 |
Micro-Raman for diamond film stress analysis
|
Chen, K.H. |
|
1995 |
4 |
4 |
p. 460-463 4 p. |
artikel |
35 |
MWPACVD diamond homoepitaxial growth: role of the plasma and the substrate parameters
|
Findeling-Dufour, C. |
|
1995 |
4 |
4 |
p. 429-434 6 p. |
artikel |
36 |
Network connectivity and structural defects in a-C:H films
|
Bounouh, Y. |
|
1995 |
4 |
4 |
p. 492-498 7 p. |
artikel |
37 |
Nitrogen doping of tetrahedral amorphous carbon
|
Robertson, J. |
|
1995 |
4 |
4 |
p. 441-444 4 p. |
artikel |
38 |
Nitrogen implantation into glassy carbon as an attempt to grow a carbon nitride thin film
|
Hoffman, A. |
|
1995 |
4 |
4 |
p. 292-296 5 p. |
artikel |
39 |
Nucleation during deposition of hydrocarbon ions as a function of substrate temperature
|
Sattel, S. |
|
1995 |
4 |
4 |
p. 333-336 4 p. |
artikel |
40 |
Nucleation of cubic boron nitride (c-BN) with ion-induced plasma-enhanced CVD
|
Kuhr, M. |
|
1995 |
4 |
4 |
p. 375-380 6 p. |
artikel |
41 |
On the gas-phase mechanisms in MWCVD and HFCVD diamond deposition
|
Beckmann, R. |
|
1995 |
4 |
4 |
p. 256-260 5 p. |
artikel |
42 |
Optical second-harmonic generation on the diamond C(111) surface
|
Buck, M. |
|
1995 |
4 |
4 |
p. 544-547 4 p. |
artikel |
43 |
Photoablation of a graphite target by a KrF laser beam. Realisation of hard carbon thin films
|
Germain, C. |
|
1995 |
4 |
4 |
p. 309-313 5 p. |
artikel |
44 |
Photoluminescence study of 〈100〉 textured CVD diamonds
|
Kania, P. |
|
1995 |
4 |
4 |
p. 425-428 4 p. |
artikel |
45 |
Prediction of the feasibility of oriented diamond films by microwave plasma-assisted CVD
|
Barrat, S. |
|
1995 |
4 |
4 |
p. 419-424 6 p. |
artikel |
46 |
Preface to the Proceedings of the 5th European Conference on Diamond, Diamond-like and Related Materials (Diamond Films '94), Il Ciocco, Italy, September 25–30, 1994
|
Bachmann, Peter K. |
|
1995 |
4 |
4 |
p. xv- 1 p. |
artikel |
47 |
Properties of photochemically modified diamond films
|
Miller, John B. |
|
1995 |
4 |
4 |
p. 435-440 6 p. |
artikel |
48 |
Quantitative measurements of atomic hydrogen during the deposition of diamond-like carbon films
|
Donnelly, K. |
|
1995 |
4 |
4 |
p. 324-327 4 p. |
artikel |
49 |
Radio frequency ion plating-induced phase transition from h-BN to nanocrystalline c-BN
|
Ulrich, S. |
|
1995 |
4 |
4 |
p. 288-291 4 p. |
artikel |
50 |
Recent results in cubic boron nitride deposition in light of the sputter model
|
Reinke, S. |
|
1995 |
4 |
4 |
p. 272-283 12 p. |
artikel |
51 |
Relation between the HFCVD diamond growth rate, the line-width of Raman spectrum and the particle size
|
Ascarelli, P. |
|
1995 |
4 |
4 |
p. 464-468 5 p. |
artikel |
52 |
Some effects of silicon substrate roughness on the growth of highly oriented 〈100〉 diamond films
|
Ellis, P.J. |
|
1995 |
4 |
4 |
p. 406-409 4 p. |
artikel |
53 |
Sponsors of Diamond Films '94
|
|
|
1995 |
4 |
4 |
p. xvi- 1 p. |
artikel |
54 |
Step-related growth phenomena on exact and misoriented {001} surfaces of CVD-grown single-crystal diamonds
|
van Enckevort, W.J.P. |
|
1995 |
4 |
4 |
p. 250-255 6 p. |
artikel |
55 |
Structural and optoelectronic properties of carbon-rich hydrogenated amorphous silicon-carbon films
|
Demichelis, F. |
|
1995 |
4 |
4 |
p. 357-360 4 p. |
artikel |
56 |
Structural changes in doped a-C:H films during annealing
|
Oral, B. |
|
1995 |
4 |
4 |
p. 482-487 6 p. |
artikel |
57 |
Structural characterization of amorphous hydrogenated carbon and carbon nitride films deposited by plasma-enhanced CVD
|
Freire Jr., F.L. |
|
1995 |
4 |
4 |
p. 499-502 4 p. |
artikel |
58 |
Structural models of a-C and a-C:H
|
Robertson, J. |
|
1995 |
4 |
4 |
p. 297-301 5 p. |
artikel |
59 |
Structure and chemical composition of BN thin films grown by pulsed-laser deposition
|
Pfleging, W. |
|
1995 |
4 |
4 |
p. 370-374 5 p. |
artikel |
60 |
Subject index
|
|
|
1995 |
4 |
4 |
p. xxiii-xxvi nvt p. |
artikel |
61 |
Substrate bias effect on the tribological properties of a-Si1 − x C x:H films
|
Meneve, J. |
|
1995 |
4 |
4 |
p. 366-369 4 p. |
artikel |
62 |
Surface reconstructions of the c-BN(001) N-rich surface
|
Osuch, K. |
|
1995 |
4 |
4 |
p. 532-538 7 p. |
artikel |
63 |
The in-flame crystallization of a metastable BN form
|
Olszyna, A. |
|
1995 |
4 |
4 |
p. 386-389 4 p. |
artikel |
64 |
The influence of the growth process on the film texture of epitaxially nucleated diamond on silicon (001)
|
Hessmer, R. |
|
1995 |
4 |
4 |
p. 410-415 6 p. |
artikel |
65 |
The measurement of electron energy distribution functions in methane-hydrogen plasmas
|
Cherry, R.I. |
|
1995 |
4 |
4 |
p. 524-527 4 p. |
artikel |
66 |
Valence-band spectra of hydrogenated diamond (111) surface
|
Yamamoto, Kazuo |
|
1995 |
4 |
4 |
p. 520-523 4 p. |
artikel |
67 |
Valence band spectroscopy of reconstructed (100) and (111) natural diamond
|
Francz, G. |
|
1995 |
4 |
4 |
p. 539-543 5 p. |
artikel |